Analysis and equalization of data-dependent jitter

Data-dependent jitter limits the bit-error rate (BER) performance of broadband communication systems and aggravates synchronization in phase- and delay-locked loops used for data recovery. A method for calculating the data-dependent jitter in broadband systems from the pulse response is discussed. The impact of jitter on conventional clock and data recovery circuits is studied in the time and frequency domain. The deterministic nature of data-dependent jitter suggests equalization techniques suitable for high-speed circuits. Two equalizer circuit implementations are presented. The first is a SiGe clock and data recovery circuit modified to incorporate a deterministic jitter equalizer. This circuit demonstrates the reduction of jitter in the recovered clock. The second circuit is a MOS implementation of a jitter equalizer with independent control of the rising and falling edge timing. This equalizer demonstrates improvement of the timing margins that achieve 10/sup -12/ BER from 30 to 52 ps at 10 Gb/s

Comparing the impact of power supply voltage on CMOS-and FinFET-based SRAMs in the presence of resistive defects

CMOS technology scaling has reached its limit at the 22 nm technology node due to several factors including Process Variations (PV), increased leakage current, Random Dopant Fluctuation (RDF), and mainly the Short-Channel Effect (SCE). In order to continue the miniaturization process via technology down-scaling while preserving system reliability and performance, Fin Field-Effect Transistors (FinFETs) arise as an alternative to CMOS transistors. In parallel, Static Random-Access Memories (SRAMs) increasingly occupy great part of Systems-on-Chips’ (SoCs) silicon area, making their reliability an important issue. SRAMs are designed to reach densities at the limit of the manufacturing process, making this component susceptible to manufacturing defects, including the resistive ones. Such defects may cause dynamic faults during the circuits’ lifetime, an important cause of test escape. Thus, the identification of the proper faulty behavior taking different operating conditions into account is considered crucial to guarantee the development of more suitable test methodologies. In this context, a comparison between the behavior of a 22 nm CMOS-based and a 20 nm FinFET-based SRAM in the presence of resistive defects is carried out considering different power supply voltages. In more detail, the behavior of defective cells operating under different power supply voltages has been investigated performing SPICE simulations. Results show that the power supply voltage plays an important role in the faulty behavior of both CMOS- and FinFET-based SRAM cells in the presence of resistive defects but demonstrate to be more expressive when considering the FinFET-based memories. Studying different operating temperatures, the results show an expressively higher occurrence of dynamic faults in FinFET-based SRAMs when compared to CMOS technology

[Delta] IDDQ testing of a CMOS 12-bit charge scaling digital-to-analog converter

This work presents design, implementation and test of a built-in current sensor (BICS) for ∆IDDQ testing of a CMOS 12-bit charge scaling digital-to-analog converter (DAC). The sensor uses power discharge method for the fault detection. The sensor operates in two modes, the test mode and the normal mode. In the test mode, the BICS is connected to the circuit under test (CUT) which is DAC and detects abnormal currents caused by manufacturing defects. In the normal mode, BICS is isolated from the CUT. The BICS is integrated with the DAC and is implemented in a 0.5 μm n-well CMOS technology. The DAC uses charge scaling method for the design and a low voltage (0 to 2.5 V) folded cascode op-amp. The built-in current sensor (BICS) has a resolution of 0.5 μA. Faults have been introduced into DAC using fault injection transistors (FITs). The method of ∆IDDQ testing has been verified both from simulation and experimental measurements

CMOS floating gate defect detection using I/sub DDQ/ test with DC power supply superposed by AC component

In this paper, we propose a new I/sub DDQ/ test method for detecting floating gate defects in CMOS ICs. In the method, an unusual increase of the supply current, caused by defects, is promoted by superposing an AC component on the DC power supply. The feasibility of the test is examined by some experiments on four DUTs with an intentionally caused defect. The results showed that our method could detect clearly all the defects, one of which may be detected by neither any functional logic test nor any conventional I/sub DDQ/ test.</p

On the production testing of analog and digital circuits

This thesis focuses on the production testing of Analog and Digital circuits. First, it addresses the issue of finding a high coverage minimum test set for the second generation current conveyor as this was not tackled before. The circuit under test is used in active capacitance multipliers, V-I scalar circuits, Biquadratic filters and many other applications. This circuit is often used to implement voltage followers, current followers and voltage to current converters. Five faults are assumed per transistor. It is shown that, to obtain 100% fault coverage, the CCII has to be operated in voltage to current converter mode. Only two test values are required to obtain this fault coverage. Additionally, the thesis focuses on the production testing of Memristor Ratioed Logic (MRL) gates because this was not studied before. MRL is a family that uses memristors along with CMOS inverters to design logic gates. Two-input NAND and NOR gates are investigated using the stuck at fault model for the memristors and the five-fault model for the transistors. It is shown that in order to obtain full coverage for the MRL NAND and NOR gates, two solutions are proposed. The first is the usage of scaled input voltages to prevent the output from falling in the undefined region. The second proposed solution is changing the switching threshold VM of the CMOS inverter. In addition, it is shown that test speed and order should be taken into consideration. It is proven that three ordered test vectors are needed for full coverage in MRL NAND and NOR gates, which is different from the 100% coverage test set in the conventional NAND and NOR CMOS designs

Rapid mapping of digital integrated circuit logic gates via multi-spectral backside imaging

Modern semiconductor integrated circuits are increasingly fabricated at untrusted third party foundries. There now exist myriad security threats of malicious tampering at the hardware level and hence a clear and pressing need for new tools that enable rapid, robust and low-cost validation of circuit layouts. Optical backside imaging offers an attractive platform, but its limited resolution and throughput cannot cope with the nanoscale sizes of modern circuitry and the need to image over a large area. We propose and demonstrate a multi-spectral imaging approach to overcome these obstacles by identifying key circuit elements on the basis of their spectral response. This obviates the need to directly image the nanoscale components that define them, thereby relaxing resolution and spatial sampling requirements by 1 and 2 - 4 orders of magnitude respectively. Our results directly address critical security needs in the integrated circuit supply chain and highlight the potential of spectroscopic techniques to address fundamental resolution obstacles caused by the need to image ever shrinking feature sizes in semiconductor integrated circuits

March CRF: an Efficient Test for Complex Read Faults in SRAM Memories

In this paper we study Complex Read Faults in SRAMs, a combination of various malfunctions that affect the read operation in nanoscale memories. All the memory elements involved in the read operation are studied, underlining the causes of the realistic faults concerning this operation. The requirements to cover these fault models are given. We show that the different causes of read failure are independent and may coexist in nanoscale SRAMs, summing their effects and provoking Complex Read Faults, CRFs. We show that the test methodology to cover this new read faults consists in test patterns that match the requirements to cover all the different simple read fault models. We propose a low complexity (?2N) test, March CRF, that covers effectively all the realistic Complex Read Fault