A Wideband 77-GHz, 17.5-dBm Fully Integrated Power Amplifier in Silicon

A 77-GHz, +17.5 dBm power amplifier (PA) with fully integrated 50-Ω input and output matching and fabricated in a 0.12-µm SiGe BiCMOS process is presented. The PA achieves a peak power gain of 17 dB and a maximum single-ended output power of 17.5 dBm with 12.8% of power-added efficiency (PAE). It has a 3-dB bandwidth of 15 GHz and draws 165 mA from a 1.8-V supply. Conductor-backed coplanar waveguide (CBCPW) is used as the transmission line structure resulting in large isolation between adjacent lines, enabling integration of the PA in an area of 0.6 mm^2. By using a separate image-rejection filter incorporated before the PA, the rejection at IF frequency of 25 GHz is improved by 35 dB, helping to keep the PA design wideband

An Integrated Subharmonic Coupled-Oscillator Scheme for a 60-GHz Phased-Array Transmitter

This paper describes the design of an integrated coupled-oscillator array in SiGe for millimeter-wave applications. The design focuses on a scalable radio architecture where multiple dies are tiled to form larger arrays. A 2 × 2 oscillator array for a 60-GHz transmitter is fabricated with integrated power amplifiers and on-chip antennas. To lock between multiple dies, an injection-locking scheme appropriate for wire-bond interconnects is described. The 2 × 2 array demonstrates a 200–MHz locking range and 1 × 4 array formed by two adjacent chips has a 60-MHz locking range. The phase noise of the coupled oscillators is below 100 dBc/Hz at a 1-MHz offset when locked to an external reference. To the best of the authors’ knowledge, this is the highest frequency demonstration of coupled oscillators fabricated in a conventional silicon integrated-circuit process

Design Of An X-band Sige Driver Amplifier

Tez (Yüksek Lisans) -- İstanbul Teknik Üniversitesi, Fen Bilimleri Enstitüsü, 2014Thesis (M.Sc.) -- İstanbul Technical University, Instıtute of Science and Technology, 2014Bu çalışmada X-Band frekans aralığında çalışan bir SiGe sürücü kuvvetlendiricisi tasarlanmıştır. Bu kuvvetlendirici push-pull devre mimarisine sahip olup, iki kattan oluşmaktadır. Yapılan ölçümler sonrası kuvvetlendiricinin en yüksek kazanç değerinin 22 dB ve 1-dB bastırma noktasındaki çıkış gücünün 12 dBm olduğu görülmüştür. Çalışmanın devamında kuvvetlendiricinin performansının yükseltilmesi için devre yapısında değişiklikler yapılmıştır. Yapılan ölçümler sonrasında ikinci kuvvetlendiricinin en yüksek kazanç değerinin 26 dB ve 1-dB bastırma noktasındaki çıkış gücünün 14 dBm olduğu görülmüştür. Her iki kuvvetlendirici ilgilenilen frekans aralığı için iyi giriş ve çıkış empedans eşleşmesi göstermektedir.An X-Band SiGe driver amplifier is designed as a part of this study. The amplifier utilizes push-pull architecture and consists of two stages. It shows a measured maximum gain of 19 dB, output power of 12 dBm at the 1-dB compression point, good input and output impedance matching for relevant frequency band. The amplifier is modified to achieve higher performance as a follow up study. Second iteration of the amplifier shows a measured maximum gain of 26 dB, output power of 14 dBm at the 1-dB compression point, good input and output impedance matching.Yüksek LisansM.Sc

Cross-differential amplifier

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches

A 24-GHz SiGe Phased-Array Receiver—LO Phase-Shifting Approach

A local-oscillator phase-shifting approach is introduced to implement a fully integrated 24-GHz phased-array receiver using an SiGe technology. Sixteen phases of the local oscillator are generated in one oscillator core, resulting in a raw beam-forming accuracy of 4 bits. These phases are distributed to all eight receiving paths of the array by a symmetric network. The appropriate phase for each path is selected using high-frequency analog multiplexers. The raw beam-steering resolution of the array is better than 10 [degrees] for a forward-looking angle, while the array spatial selectivity, without any amplitude correction, is better than 20 dB. The overall gain of the array is 61 dB, while the array improves the input signal-to-noise ratio by 9 dB

Broadband Receiver Electronic Circuits for Fiber-Optical Communication Systems

The exponential growth of internet traffic drives datacenters to constantly improve their capacity. As the copper based network infrastructure is being replaced by fiber-optical interconnects, new industrial standards for higher datarates are required. Several research and industrial organizations are aiming towards 400 Gb Ethernet and beyond, which brings new challenges to the field of high-speed broadband electronic circuit design. Replacing OOK with higher M-ary modulation formats and using higher datarates increases network capacity but at the cost of power. With datacenters rapidly becoming significant energy consumers on the global scale, the energy efficiency of the optical interconnect transceivers takes a primary role in the development of novel systems. There are several additional challenges unique in the design of a broadband shortreach fiber-optical receiver system. The sensitivity of the receiver depends on the noise performance of the PD and the electronics. The overall system noise must be optimized for the specific application, modulation scheme, PD and VCSEL characteristics. The topology of the transimpedance amplifier affects the noise and frequency response of the PD, so the system must be optimized as a whole. Most state-of-the-art receivers are built on high-end semiconductor SiGe and InP technologies. However, there are still several design decisions to be made in order to get low noise, high energy efficiency and adequate bandwidth. In order to overcome the frequency limitations of the optoelectronic components, bandwidth enhancement and channel equalization techniques are used. In this work several different blocks of a receiver system are designed and characterized. A broadband, 50 GHz bandwidth CB-based TIA and a tunable gain equalizer are designed in a 130 nm SiGe BiCMOS process. An ultra-broadband traveling wave amplifier is presented, based on a 250 nm InP DHBT technology demonstrating a 207 GHz bandwidth. Two TIA front-end topologies with 133 GHz bandwidth, a CB and a CE with shunt-shunt feedback, based on a 130 nm InP DHBT technology are designed and compared

A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier

Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closed-loop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135° under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%