Resonantly enhanced nonlinear optics in semiconductor quantum wells: An application to sensitive infrared detection

A novel class of coherent nonlinear optical phenomena, involving induced transparency in quantum wells, is considered in the context of a particular application to sensitive long-wavelength infrared detection. It is shown that the strongest decoherence mechanisms can be suppressed or mitigated, resulting in substantial enhancement of nonlinear optical effects in semiconductor quantum wells.Comment: 4 pages, 3 figures, replaced with revised versio

Simulation of nanostructure-based high-efficiency solar cells: challenges, existing approaches and future directions

Many advanced concepts for high-efficiency photovoltaic devices exploit the peculiar optoelectronic properties of semiconductor nanostructures such as quantum wells, wires and dots. While the optics of such devices is only modestly affected due to the small size of the structures, the optical transitions and electronic transport can strongly deviate from the simple bulk picture known from conventional solar cell devices. This review article discusses the challenges for an adequate theoretical description of the photovoltaic device operation arising from the introduction of nanostructure absorber and/or conductor components and gives an overview of existing device simulation approaches.Comment: Invited paper, accepted for publication in IEEE Journal of Selected Topics in Quantum Electronic

Electromagnetically induced transparency in superconducting quantum circuits : Effects of decoherence, tunneling and multi-level cross-talk

We explore theoretically electromagnetically-induced transparency (EIT) in a superconducting quantum circuit (SQC). The system is a persistent-current flux qubit biased in a $\Lambda$ configuration. Previously [Phys. Rev. Lett. 93, 087003 (2004)], we showed that an ideally-prepared EIT system provides a sensitive means to probe decoherence. Here, we extend this work by exploring the effects of imperfect dark-state preparation and specific decoherence mechanisms (population loss via tunneling, pure dephasing, and incoherent population exchange). We find an initial, rapid population loss from the $\Lambda$ system for an imperfectly prepared dark state. This is followed by a slower population loss due to both the detuning of the microwave fields from the EIT resonance and the existing decoherence mechanisms. We find analytic expressions for the slow loss rate, with coefficients that depend on the particular decoherence mechanisms, thereby providing a means to probe, identify, and quantify various sources of decoherence with EIT. We go beyond the rotating wave approximation to consider how strong microwave fields can induce additional off-resonant transitions in the SQC, and we show how these effects can be mitigated by compensation of the resulting AC Stark shifts

Input-output theory of cavities in the ultra-strong coupling regime: the case of a time-independent vacuum Rabi frequency

We present a full quantum theory for the dissipative dynamics of an optical cavity in the ultra-strong light-matter coupling regime, in which the vacuum Rabi frequency is comparable to the electronic transition frequency and the anti-resonant terms of the light-matter coupling play an important role. In particular, our model can be applied to the case of intersubband transitions in doped semiconductor quantum wells embedded in a microcavity. The coupling of the intracavity photonic mode and of the electronic polarization to the external, frequency-dependent, dissipation baths is taken into account by means of quantum Langevin equations in the input-output formalism. Observable spectra (reflection, absorption, transmission and electroluminescence) are calculated analytically in the case of a time-independent vacuum Rabi frequency

Optical Properties of Quasiperiodically Arranged Semiconductor Nanostructures

This work consists of two parts which are entitled "One-Dimensional Resonant Fibonacci Quasicrystals" and "Resonant Tunneling of Light in Silicon Nanostructures". A microscopic theory has been applied to investigate the optical properties of the respective semiconductor nanostructures. The studied one-dimensional resonant Fibonacci quasicrystals consist of GaAs quantum wells (QW) that are separated by either a large spacer L or a small one S. These spacers are arranged according to the Fibonacci sequence LSLLSLSL... The average spacing satisfies a generalized Bragg condition with respect to the 1s-exciton resonance of the QWs. A theory, that makes use of the transfer-matrix method and that allows for the microscopic description of many-body effects such as excitation-induced dephasing caused by the Coulomb scattering of carriers, has been applied to compute the optical spectra of such structures. Based on an appropriate single set of fixed sample parameters, the theory provides reflectance spectra that are in excellent agreement with the corresponding measured linear and nonlinear spectra. A pronounced sharp reflectivity minimum is found in the vicinity of the heavy-hole resonance both in the measured as well as in the calculated linear 54-QW spectra. Such sharp spectral features are suitable for application as optical switches or for slow-light effects. Hence, their properties have been studied in detail. Specifically, the influence of the carrier density, of the QW arrangement, of a detuning away from the exact Bragg condition, of the average spacing as well as of the ratio of the optical path lengths of the large and small spacers L and S, respectively, and of the QW number on the optical properties of the samples have been studied. The features of measured spectra could have been attributed to different sample properties related to the sample setup. Additionally, self-similarity among reflection spectra corresponding to different QW numbers that exceed a Fibonacci number by one is observed, which identifies certain spectral features as true fingerprints of the Fibonacci spacing. In the second part, resonant tunneling of light in stacked structures consisting of alternating parallel layers of silicon and air have been studied theoretically. While usually total internal reflection is expected for light shined on a silicon-air interface under an angle larger than the critical angle, light may tunnel through the air barrier due to the existence of evanescent waves inside the air layers if the neighboring silicon layer is close enough. This tunneling of light is in analogy to the well-known tunneling of a quantum particle through a potential barrier. In particular, the wave equation and the stationary Schrödinger equation are of the same form. Hence, the resonant tunneling of light can be understood in analogy to the resonant tunneling of e.g. electrons as well. The characteristic feature of resonant tunneling is a complete transmission through the barrier at certain resonance energies. The transmission, reflection, and propagation properties of the samples have been determined numerically using a transfer-matrix method. Analytical expressions for the energetic resonance positions have been derived and are in excellent agreement with the numerical simulations. Special attention has been drawn to the lowest resonance out of a series of resonant-tunneling resonances. There, light has been observed to be concentrated within silicon layers the extension of which is smaller than the corresponding wavelength of the light. Specifically, the quality factor is large at the resonance energies, so that the resonant light leaves the sample delayed, which allows for the study of slow light. A detailed investigation of how the sample geometry influences the optical properties of the sample has been presented. In particular, it has been outlined how to design a sample to obtain certain desired optical properties. The optical properties that are related to the resonant tunneling strongly rely on the (mirror-)symmetry of the samples. If asymmetries - especially of the silicon wells inside the air barrier - are present in the sample setup, the resonant-tunneling efficiency is diminished. Such asymmetries are unavoidable in the production of the samples. Therefore, a parameter range has been identified in which reasonable transmission above a transmission probability of 50% can be expected taking typical fluctuations caused by the production process into account. Silicon-based resonant-tunneling structures of a setup proposed by the presented theory have already been fabricated and first experiments are under way. This will allow for theory-experiment comparisons

Fingerprints in the Optical and Transport Properties of Quantum Dots

The book "Fingerprints in the optical and transport properties of quantum dots" provides novel and efficient methods for the calculation and investigating of the optical and transport properties of quantum dot systems. This book is divided into two sections. In section 1 includes ten chapters where novel optical properties are discussed. In section 2 involve eight chapters that investigate and model the most important effects of transport and electronics properties of quantum dot systems This is a collaborative book sharing and providing fundamental research such as the one conducted in Physics, Chemistry, Material Science, with a base text that could serve as a reference in research by presenting up-to-date research work on the field of quantum dot systems

Fine structure and optical pumping of spins in individual semiconductor quantum dots

We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to process spins for use as a carrier of information