Comparing the impact of power supply voltage on CMOS-and FinFET-based SRAMs in the presence of resistive defects

CMOS technology scaling has reached its limit at the 22 nm technology node due to several factors including Process Variations (PV), increased leakage current, Random Dopant Fluctuation (RDF), and mainly the Short-Channel Effect (SCE). In order to continue the miniaturization process via technology down-scaling while preserving system reliability and performance, Fin Field-Effect Transistors (FinFETs) arise as an alternative to CMOS transistors. In parallel, Static Random-Access Memories (SRAMs) increasingly occupy great part of Systems-on-Chips’ (SoCs) silicon area, making their reliability an important issue. SRAMs are designed to reach densities at the limit of the manufacturing process, making this component susceptible to manufacturing defects, including the resistive ones. Such defects may cause dynamic faults during the circuits’ lifetime, an important cause of test escape. Thus, the identification of the proper faulty behavior taking different operating conditions into account is considered crucial to guarantee the development of more suitable test methodologies. In this context, a comparison between the behavior of a 22 nm CMOS-based and a 20 nm FinFET-based SRAM in the presence of resistive defects is carried out considering different power supply voltages. In more detail, the behavior of defective cells operating under different power supply voltages has been investigated performing SPICE simulations. Results show that the power supply voltage plays an important role in the faulty behavior of both CMOS- and FinFET-based SRAM cells in the presence of resistive defects but demonstrate to be more expressive when considering the FinFET-based memories. Studying different operating temperatures, the results show an expressively higher occurrence of dynamic faults in FinFET-based SRAMs when compared to CMOS technology

Characterizing the Effects of Intermittent Faults on a Processor for Dependability Enhancement Strategy

As semiconductor technology scales into the nanometer regime, intermittent faults have become an increasing threat. This paper focuses on the effects of intermittent faults on NET versus REG on one hand and the implications for dependability strategy on the other. First, the vulnerability characteristics of representative units in OpenSPARC T2 are revealed, and in particular, the highly sensitive modules are identified. Second, an arch-level dependability enhancement strategy is proposed, showing that events such as core/strand running status and core-memory interface events can be candidates of detectable symptoms. A simple watchdog can be deployed to detect application running status (IEXE event). Then SDC (silent data corruption) rate is evaluated demonstrating its potential. Third and last, the effects of traditional protection schemes in the target CMT to intermittent faults are quantitatively studied on behalf of the contribution of each trap type, demonstrating the necessity of taking this factor into account for the strategy

Automating defects simulation and fault modeling for SRAMs

The continues improvement in manufacturing process density for very deep sub micron technologies constantly leads to new classes of defects in memory devices. Exploring the effect of fabrication defects in future technologies, and identifying new classes of realistic functional fault models with their corresponding test sequences, is a time consuming task up to now mainly performed by hand. This paper proposes a new approach to automate this procedure. The proposed method exploits the capabilities of evolutionary algorithms to automatically identify faulty behaviors into defective memories and to define the corresponding fault models and relevant test sequences. Target defects are modeled at the electrical level in order to optimize the results to the specific technology and memory architecture

Algorithms for Power Aware Testing of Nanometer Digital ICs

At-speed testing of deep-submicron digital very large scale integrated (VLSI) circuits has become mandatory to catch small delay defects. Now, due to continuous shrinking of complementary metal oxide semiconductor (CMOS) transistor feature size, power density grows geometrically with technology scaling. Additionally, power dissipation inside a digital circuit during the testing phase (for test vectors under all fault models (Potluri, 2015)) is several times higher than its power dissipation during the normal functional phase of operation. Due to this, the currents that flow in the power grid during the testing phase, are much higher than what the power grid is designed for (the functional phase of operation). As a result, during at-speed testing, the supply grid experiences unacceptable supply IR-drop, ultimately leading to delay failures during at-speed testing. Since these failures are specific to testing and do not occur during functional phase of operation of the chip, these failures are usually referred to false failures, and they reduce the yield of the chip, which is undesirable. In nanometer regime, process parameter variations has become a major problem. Due to the variation in signalling delays caused by these variations, it is important to perform at-speed testing even for stuck faults, to reduce the test escapes (McCluskey and Tseng, 2000; Vorisek et al., 2004). In this context, the problem of excessive peak power dissipation causing false failures, that was addressed previously in the context of at-speed transition fault testing (Saxena et al., 2003; Devanathan et al., 2007a,b,c), also becomes prominent in the context of at-speed testing of stuck faults (Maxwell et al., 1996; McCluskey and Tseng, 2000; Vorisek et al., 2004; Prabhu and Abraham, 2012; Potluri, 2015; Potluri et al., 2015). It is well known that excessive supply IR-drop during at-speed testing can be kept under control by minimizing switching activity during testing (Saxena et al., 2003). There is a rich collection of techniques proposed in the past for reduction of peak switching activity during at-speed testing of transition/delay faults ii in both combinational and sequential circuits. As far as at-speed testing of stuck faults are concerned, while there were some techniques proposed in the past for combinational circuits (Girard et al., 1998; Dabholkar et al., 1998), there are no techniques concerning the same for sequential circuits. This thesis addresses this open problem. We propose algorithms for minimization of peak switching activity during at-speed testing of stuck faults in sequential digital circuits under the combinational state preservation scan (CSP-scan) architecture (Potluri, 2015; Potluri et al., 2015). First, we show that, under this CSP-scan architecture, when the test set is completely specified, the peak switching activity during testing can be minimized by solving the Bottleneck Traveling Salesman Problem (BTSP). This mapping of peak test switching activity minimization problem to BTSP is novel, and proposed for the first time in the literature. Usually, as circuit size increases, the percentage of don’t cares in the test set increases. As a result, test vector ordering for any arbitrary filling of don’t care bits is insufficient for producing effective reduction in switching activity during testing of large circuits. Since don’t cares dominate the test sets for larger circuits, don’t care filling plays a crucial role in reducing switching activity during testing. Taking this into consideration, we propose an algorithm, XStat, which is capable of performing test vector ordering while preserving don’t care bits in the test vectors, following which, the don’t cares are filled in an intelligent fashion for minimizing input switching activity, which effectively minimizes switching activity inside the circuit (Girard et al., 1998). Through empirical validation on benchmark circuits, we show that XStat minimizes peak switching activity significantly, during testing. Although XStat is a very powerful heuristic for minimizing peak input-switchingactivity, it will not guarantee optimality. To address this issue, we propose an algorithm that uses Dynamic Programming to calculate the lower bound for a given sequence of test vectors, and subsequently uses a greedy strategy for filling don’t cares in this sequence to achieve this lower bound, thereby guaranteeing optimality. This algorithm, which we refer to as DP-fill in this thesis, provides the globally optimal solution for minimizing peak input-switching-activity and also is the best known in the literature for minimizing peak input-switching-activity during testing. The proof of optimality of DP-fill in minimizing peak input-switching-activity is also provided in this thesis

Defect-tolerance and testing for configurable nano-crossbars

Moore\u27s Law speculated a trend in computation technology in terms of number of transistors per unit area that would double roughly every two years. Even after 40 years of this prediction, current technologies have been following it successfully. There are however, certain physical limitations of current CMOS that would result in fundamental obstructions to continuation of Moore\u27s Law. Although there is a debate amongst experts on how much time it would take for this to happen, it is certain that some entirely new paradigms for semiconductor electronics would be needed to replace CMOS and to delay the end of Moore\u27s Law. Silicon nanowires (SiNW) and Carbon nanotubes (CNT) possess significant promise to replace current CMOS --Abstract, page iv

Design-for-delay-testability techniques for high-speed digital circuits

The importance of delay faults is enhanced by the ever increasing clock rates and decreasing geometry sizes of nowadays' circuits. This thesis focuses on the development of Design-for-Delay-Testability (DfDT) techniques for high-speed circuits and embedded cores. The rising costs of IC testing and in particular the costs of Automatic Test Equipment are major concerns for the semiconductor industry. To reverse the trend of rising testing costs, DfDT is\ud getting more and more important

Fault modelling and accelerated simulation of integrated circuits manufacturing defects under process variation

As silicon manufacturing process scales to and beyond the 65-nm node, process variation can no longer be ignored. The impact of process variation on integrated circuit performance and power has received significant research input. Variation-aware test, on the other hand, is a relatively new research area that is currently receiving attention worldwide.Research has shown that test without considering process variation may lead to loss of test quality. Fault modelling and simulation serve as a backbone of manufacturing test. This thesis is concerned with developing efficient fault modelling techniques and simulation methodologies that take into account the effect of process variation on manufacturing defects with particular emphasis on resistive bridges and resistive opens.The first contribution of this thesis addresses the problem of long computation time required to generate logic fault of resistive bridges under process variation by developing a fast and accurate modelling technique to model logic fault behaviour of resistive bridges.The new technique is implemented by employing two efficient voltage calculation algorithms to calculate the logic threshold voltage of driven gates and critical resistance of a fault-site to enable the computation of bridge logic faults without using SPICE. Simulation results show that the technique is fast (on average 53 times faster) and accurate (worst case is 2.64% error) when compared with HSPICE. The second contribution analyses the complexity of delay fault simulation of resistive bridges to reduce the computation time of delay fault when considering process variation. An accelerated delay fault simulation methodology of resistive bridges is developed by employing a three-step strategy to speed up the calculation of transient gate output voltage which is needed to accurately compute delay faults. Simulation results show that the methodology is on average 17.4 times faster, with 5.2% error in accuracy, when compared with HSPICE. The final contribution presents an accelerated simulation methodology of resistive opens to address the problem of long simulation time of delay fault when considering process variation. The methodology is implemented by using two efficient algorithms to accelerate the computation of transient gate output voltage and timing critical resistance of an open fault-site. Simulation results show that the methodology is on average up to 52 times faster than HSPICE, with 4.2% error in accuracy

DFT Techniques and Automation for Asynchronous NULL Conventional Logic Circuits

Conventional automatic test pattern generation (ATPG) algorithms fail when applied to asynchronous NULL convention logic (NCL) circuits due to the absence of a global clock and presence of more state-holding elements, leading to poor fault coverage. This paper presents a design-for-test (DFT) approach aimed at making asynchronous NCL designs testable using conventional ATPG programs. We propose an automatic DFT insertion flow (ADIF) methodology that performs scan and test point insertion on NCL designs to improve test coverage, using a custom ATPG library. Experimental results show significant increase in fault coverage for NCL cyclic and acyclic pipelined designs