299 research outputs found

    Process Variation Aware DRAM (Dynamic Random Access Memory) Design Using Block-Based Adaptive Body Biasing Algorithm

    Get PDF
    Large dense structures like DRAMs (Dynamic Random Access Memory) are particularly susceptible to process variation, which can lead to variable latencies in different memory arrays. However, very little work exists on variation studies in DRAMs. This is due to the fact that DRAMs were traditionally placed off-chip and their latency changes due to process variation did not impact the overall processor performance. However, emerging technology trends like three-dimensional integration, use of sophisticated memory controllers, and continued scaling of technology node, substantially reduce DRAM access latency. Hence, future technology nodes will see widespread adoption of embedded DRAMs. This makes process variation a critical upcoming challenge in DRAMs that must be addressed in current and forthcoming technology generations. In this paper, techniques for modeling the effect of random, as well as spatial variation, in large DRAM array structures are presented. Sensitivity-based gate level process variation models combined with statistical timing analysis are used to estimate the impact of process variation on the DRAM performance and leakage power. A simulated annealing-based Vth assignment algorithm using adaptive body biasing is proposed in this thesis to improve the yield of DRAM structures. By applying the algorithm on a 1GB DRAM array, an average of 14.66% improvement in the DRAM yield is obtained

    Radiation Test Challenges for Scaled Commerical Memories

    Get PDF
    As sub-100nm CMOS technologies gather interest, the radiation effects performance of these technologies provide a significant challenge. In this talk, we shall discuss the radiation testing challenges as related to commercial memory devices. The focus will be on complex test and failure modes emerging in state-of-the-art Flash non-volatile memories (NVMs) and synchronous dynamic random access memories (SDRAMs), which are volatile. Due to their very high bit density, these device types are highly desirable for use in the natural space environment. In this presentation, we shall discuss these devices with emphasis on considerations for test and qualification methods required

    Radiation Performance of 1 Gbit DDR SDRAMs Fabricated in the 90 nm CMOS Technology Node

    Get PDF
    We present Single Event Effect (SEE) and Total Ionizing Dose (TID) data for 1 Gbit DDR SDRAMs (90 nm CMOS technology) as well as comparing this data with earlier technology nodes from the same manufacturer

    ポータビリティを意識したCMOSミックスドシグナルVLSI回路設計手法に関する研究

    Get PDF
    本研究は、半導体上に集積されたアナログ・ディジタル・メモリ回路から構成されるミクストシグナルシステムを別の製造プロセスへ移行することをポーティングとして定義し、効率的なポーティングを行うための設計方式と自動回路合成アルゴリズムを提案し、いくつかの典型的な回路に対する設計事例を示し、提案手法の妥当性を立証している。北九州市立大

    An Energy-Efficient Reconfigurable Mobile Memory Interface for Computing Systems

    Get PDF
    The critical need for higher power efficiency and bandwidth transceiver design has significantly increased as mobile devices, such as smart phones, laptops, tablets, and ultra-portable personal digital assistants continue to be constructed using heterogeneous intellectual properties such as central processing units (CPUs), graphics processing units (GPUs), digital signal processors, dynamic random-access memories (DRAMs), sensors, and graphics/image processing units and to have enhanced graphic computing and video processing capabilities. However, the current mobile interface technologies which support CPU to memory communication (e.g. baseband-only signaling) have critical limitations, particularly super-linear energy consumption, limited bandwidth, and non-reconfigurable data access. As a consequence, there is a critical need to improve both energy efficiency and bandwidth for future mobile devices.;The primary goal of this study is to design an energy-efficient reconfigurable mobile memory interface for mobile computing systems in order to dramatically enhance the circuit and system bandwidth and power efficiency. The proposed energy efficient mobile memory interface which utilizes an advanced base-band (BB) signaling and a RF-band signaling is capable of simultaneous bi-directional communication and reconfigurable data access. It also increases power efficiency and bandwidth between mobile CPUs and memory subsystems on a single-ended shared transmission line. Moreover, due to multiple data communication on a single-ended shared transmission line, the number of transmission lines between mobile CPU and memories is considerably reduced, resulting in significant technological innovations, (e.g. more compact devices and low cost packaging to mobile communication interface) and establishing the principles and feasibility of technologies for future mobile system applications. The operation and performance of the proposed transceiver are analyzed and its circuit implementation is discussed in details. A chip prototype of the transceiver was implemented in a 65nm CMOS process technology. In the measurement, the transceiver exhibits higher aggregate data throughput and better energy efficiency compared to prior works

    ACT: A DFT tool for self-timed circuits

    Get PDF
    Journal ArticleThis paper presents a Design for Testability (DFT) tool called ACT (Asynchronous Circuit Testing) which uses a partial scan technique to make macro-module based selftimed circuits testable. The ACT tool is the first oFits kind for testing macro-module based self-timed circuits. ACT modifies designs automatically to incorporate partial scan and provides a complete path from schematic capturie to physical layout. It also has a test generation system to generate vectors for the testable design and to compute fault coverage of the generated tests. The test generatioin system includes a module for doing critical hazard free (.est generation using a new 6-valued algebra. ACT has been hilt around commercial tools from Viewlogic and Cascade. A Viewlogic schematic is used as the design entry point and Cascade tools are used for technology mapping

    Floorplanning with wire pipelining in adaptive communication channels

    Get PDF

    Design and Verification of a DFI-AXI DDR4 Memory PHY Bridge Suitable for FPGA Based RTL Emulation and Prototyping

    Get PDF
    System on chip (SoC) designers today are emphasizing on a process which can ensure robust silicon at the first tape-out. Given the complexity of modern SoC chips, there is compelling need to have suitable run time software, such at the Linux kernel and necessary drivers available once prototype silicon is available. Emulation and FPGA prototyping systems are exemplary platforms to run the tests for designs, are naturally efficient and perform well, and enable early software development. While useful, one needs to keep in mind that emulation and FPGA prototyping systems do not run at full silicon speed. In fact, the SoC target ported to the FPGA might achieve a clock speed less than 10 MHz. While still very useful for testing and software development, this low operating speed creates challenges for connecting to external devices such as DDR SDRAM. In this paper, the DDR-PHY INTERFACE (DFI) to Advanced eXtensible Interface (AXI) Bridge is designed to support a DDR4 memory sub-system design. This bridge module is developed based on the DDR PHY Interface version 5.0 specification, and once implemented in an FPGA, it transfers command information and data between the SoC DDR Memory controller being prototypes, across the AXI bus to an FPGA specific memory controller connected to a DDR SDRAM or other physical memory external to the FPGA. This bridge module enables multi-communication with the design under test (DUT) with a synthesizable SCE-MI based infrastructure between the bridge and logic simulator. SCE-MI provides a direct mechanism to inject the specific traffic, and monitor performance of the DFI-AXI DDR4 Memory PHY Bridge. Both Emulation and FPGA prototyping platforms can use this design and its testbench
    corecore