Terahertz Characterisation of Living Plant Leaves for Quality of Life Assessment Applications

This paper presents preliminary results on employing Terahertz (THz) technology for measuring the water contents of leaves. The main purpose of this work is to highlight transmission constraints of terahertz radiation through the plants in the THz frequency region. Multiple leaves of plants are examined using the THz Swissto12 system, and the effect of thickness and water contents on transmission loss and attenuation are observed at different frequency regions, which can lead to meaningful information to study and analyse the existence of any pesticides in leaves with terahertz frequencies. The results of this paper pave the way for applicability of terahertz frequencies for sensing the quality of life in plants

A tunable cavity-locked diode laser source for terahertz photomixing

An all solid-state approach to the precise frequency synthesis and control of widely tunable terahertz radiation by differencing continuous-wave diode lasers at 850 nm is reported in this paper. The difference frequency is synthesized by three fiber-coupled external-cavity laser diodes. Two of the lasers are Pound-Drever-Hall locked to different orders of a Fabry-Perot (FP) cavity, and the third is offset-frequency locked to the second of the cavity-locked lasers using a tunable microwave oscillator. The first cavity-locked laser and the offset-locked laser produce the difference frequency, whose value is accurately determined by the sum of an integer multiple of the free spectral range of the FP cavity and the offset frequency. The dual-frequency 850-nm output of the three laser system is amplified to 500 mW through two-frequency injection seeding of a single semiconductor tapered optical amplifier. As proof of precision frequency synthesis and control of tunability, the difference frequency is converted into a terahertz wave by optical-heterodyne photomixing in low-temperature-grown GaAs and used for the spectroscopy of simple molecules. The 3-dB spectral power bandwidth of the terahertz radiation is routinely observed to be ≾1 MHz. A simple, but highly accurate, method of obtaining an absolute frequency calibration is proposed and an absolute calibration of 10^(-7) demonstrated using the known frequencies of carbon monoxide lines between 0.23-1.27 THz

MEMS-Based Terahertz Photoacoustic Chemical Sensing System

Advancements in microelectromechanical system (MEMS) technology over the last several decades has been a driving force behind miniaturizing and improving sensor designs. In this work, a specialized cantilever pressure sensor was designed, modeled, and fabricated to investigate the photoacoustic (PA) response of gases to terahertz (THz) radiation under low-vacuum conditions associated with high-resolution spectroscopy. Microfabricated cantilever devices made using silicon-on-insulator (SOI) wafers were tested in a custom-built test chamber in this first ever demonstration of a cantilever-based PA chemical sensor and spectroscopy system in the THz frequency regime. The THz radiation source was amplitude modulated to excite acoustic waves in the chamber, and PA molecular spectroscopy of a gas species was performed. An optical measurement technique was used to evaluate the PA effect on the cantilever sensor; a laser beam was reflected off the cantilever tip and through an iris to a photodiode. As the cantilever movement deflected the laser beam, the beam was clipped by an iris and generated the PA signal. Experimental data indicated a predominantly linear response in signal amplitude from the photodiode measurement technique, which directly correlated to measured cantilever deflections. Using the custom-designed PA chamber and MEMS cantilever sensor, excellent low-pressure PA spectral data of methyl cyanide (CH3CN) at 2 to 40 mTorr range has been obtained. At low chamber pressures, the sensitivity of our system was 1.97 × 10−5 cm−1 and had an excellent normalized noise equivalent absorption (NNEA) coefficient of 1.39 × 10−9 cm−1 W Hz-½ using a 0.5 s signal averaging time

Terahertz Microstrip Elevated Stack Antenna Technology on GaN-on-Low Resistivity Silicon Substrates for TMIC

In this paper we demonstrate a THz microstrip stack antenna on GaN-on-low resistivity silicon substrates (ρ < 40 Ω.cm). To reduce losses caused by the substrate and to enhance performance of the integrated antenna at THz frequencies, the driven patch is shielded by silicon nitride and gold in addition to a layer of benzocyclobutene (BCB). A second circular patch is elevated in air using gold posts, making this design a stack configuration. The demonstrated antenna shows a measured resonance frequency in agreement with the modeling at 0.27 THz and a measured S11 as low as −18 dB was obtained. A directivity, gain and radiation efficiency of 8.3 dB, 3.4 dB, and 32% respectively was exhibited from the 3D EM model. To the authors' knowledge, this is the first demonstrated THz integrated microstrip stack antenna for TMIC (THz Monolithic Integrated Circuits) technology; the developed technology is suitable for high performance III-V material on low resistivity/high dielectric substrates