259 research outputs found
Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications
Resonant frequencies of the two-dimensional plasma in FETs increase with the
reduction of the channel dimensions and can reach the THz range for sub-micron
gate lengths. Nonlinear properties of the electron plasma in the transistor
channel can be used for the detection and mixing of THz frequencies. At
cryogenic temperatures resonant and gate voltage tunable detection related to
plasma waves resonances, is observed. At room temperature, when plasma
oscillations are overdamped, the FET can operate as an efficient broadband THz
detector. We present the main theoretical and experimental results on THz
detection by FETs in the context of their possible application for THz imaging.Comment: 22 pages, 12 figures, review pape
Terahertz responsivity of field-effect transistors under arbitrary biasing conditions
Current biased photoresponse model of long channel field-effect
transistor (FET) detectors is introduced to describe the low
frequency behavior in complex circuit environment. The model is
applicable in all FET working regions, including subthreshold,
linear, saturated modes, includes bulk potential variations, and
handles the simultaneous gate-source and drain-source detection
or source-driven topologies. The model is based on the
phenomenological representation that links the photoresponse to
the gate transconductance over drain current ratio (gm/ID) and
circuit theory. A derived method is provided to analyze the
detector behavior, to characterize existing antenna coupled
detectors, and to predict the photoresponse in a complex
circuit. The model is validated by measurements of 180 nm gate
length silicon and GaAs high electron mobility FETs
imaging the coupling of terahertz radiation to a high electron mobility transistor in the near field
We used AlGaN/GaN high electron mobility transistors as room-temperature direct detectors of radiation at 0.15 THz from a free electron laser, hence 5 times higher than their cutoff frequency of 30 GHz. By near-field active mapping we investigated the antenna-like coupling of the radiation to the transistor channel. We formulate a model for the detection based on self-mixing in the transistor channel. The noise equivalent power is found in the range of 10^{-7} W/Hz^{0.5} without any optimization of the device responsivity. Present day AlGaN/GaN fabrication technology may provide operation at higher frequency, integration of amplifiers for improved responsivity and fast switches for multiplexing, which make the detector here described the basic element of a monolithic terahertz focal plane array
APPLICATIONS OF PLASMONICS FOR TERAHERTZ DETECTION, MODULATION AND WAVEGUIDING
Ph.DDOCTOR OF PHILOSOPH
Performance limits of terahertz zero biased rectifying detectors for direct detection
Performance limits of uncooled unbiased field effect transistors (FETs) and Schottky-barrier diodes (SBDs) as direct detection rectifying terahertz (THz) detectors operating in the broadband regime have been considered in this paper. Some basic extrinsic parasitics and detector-antenna impedance matching were taken into account. It has been concluded that, in dependence on radiation frequency, detector and antenna parameters, the ultimate optical responsivity (ℜopt) and optical noise equivalent power (NEPopt) of FETs in the broadband detection regime can achieve ℜopt ~ 23 kV/W and NEPopt ~ 1⋅10⁻¹² W/Hz¹/², respectively. At low radiation frequency ν in the THz spectral region the NEPopt of SBD detectors can be better by a factor of ~1.75 as compared to that of Si MOSFETs (metal oxide semiconductor FETs) and GaAlN/GaN HFETs (heterojunction FETs) with comparable device impedances
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