10,608 research outputs found
Recommended from our members
A micro-electro-mechanical-system-based thermal shear-stress sensor with self-frequency compensation
By applying the micro-electro-mechanical-system (MEMS) fabrication technology, we developed a micro-thermal sensor to measure surface shear stress. The heat transfer from a polysilicon heater depends on the normal velocity gradient and thus provides the surface shear stress. However, the sensitivity of the shear-stress measurements in air is less than desirable due to the low heat capacity of air. A unique feature of this micro-sensor is that the heating element, a film 1 µm thick, is separated from the substrate by a vacuum cavity 2 µm thick. The vacuum cavity prevents the conduction of heat to the substrate and therefore improves the sensitivity by an order of magnitude. Owing to the low thermal inertia of the miniature sensing element, this shear-stress micro-sensor can provide instantaneous measurements of small-scale turbulence. Furthermore, MEMS technology allows us make multiple sensors on a single chip so that we can perform distributed measurements. In this study, we use multiple polysilicon sensor elements to improve the dynamic performance of the sensor itself. It is demonstrated that the frequency-response range of a constant-current sensor can be extended from the order of 100 Hz to 100 kHz
A 0.1–5.0 GHz flexible SDR receiver with digitally assisted calibration in 65 nm CMOS
© 2017 Elsevier Ltd. All rights reserved.A 0.1–5.0 GHz flexible software-defined radio (SDR) receiver with digitally assisted calibration is presented, employing a zero-IF/low-IF reconfigurable architecture for both wideband and narrowband applications. The receiver composes of a main-path based on a current-mode mixer for low noise, a high linearity sub-path based on a voltage-mode passive mixer for out-of-band rejection, and a harmonic rejection (HR) path with vector gain calibration. A dual feedback LNA with “8” shape nested inductor structure, a cascode inverter-based TCA with miller feedback compensation, and a class-AB full differential Op-Amp with Miller feed-forward compensation and QFG technique are proposed. Digitally assisted calibration methods for HR, IIP2 and image rejection (IR) are presented to maintain high performance over PVT variations. The presented receiver is implemented in 65 nm CMOS with 5.4 mm2 core area, consuming 9.6–47.4 mA current under 1.2 V supply. The receiver main path is measured with +5 dB m/+5dBm IB-IIP3/OB-IIP3 and +61dBm IIP2. The sub-path achieves +10 dB m/+18dBm IB-IIP3/OB-IIP3 and +62dBm IIP2, as well as 10 dB RF filtering rejection at 10 MHz offset. The HR-path reaches +13 dB m/+14dBm IB-IIP3/OB-IIP3 and 62/66 dB 3rd/5th-order harmonic rejection with 30–40 dB improvement by the calibration. The measured sensitivity satisfies the requirements of DVB-H, LTE, 802.11 g, and ZigBee.Peer reviewedFinal Accepted Versio
Capacitor Mismatch Calibration Technique to Improve the SFDR of 14-Bit SAR ADC
This paper presents mismatch calibration technique to improve the SFDR in a 14-bit successive approximation register (SAR) analog-to-digital converter (ADC) for wearable electronics application. Behavioral Monte-Carlo simulations are applied to demonstrate the effect of the proposed method where no complex digital calibration algorithm or auxiliary calibration DAC needed. Simulation results show that with a mismatch error typical of modern technology, the SFDR is enhanced by more than 20 dB with the proposed technique for a 14-bit SAR ADC
Quantum shot noise in mesoscopic superconductor-semiconductor heterostructures
Shot noise in a mesoscopic electrical conductor have become one of the most attentiondrawing
subject over the last decade. This is because the shot-noise measurements
provide a powerful tool to study charge transport in mesoscopic systems [1]. While
conventional resistance measurements yield information on the average probability
for the transmission of electrons from source to drain, shot-noise provides additional
information on the electron transfer process, which can not be obtained from resistance
measurements. For example, one can determine the charge ‘q’ of the current
carrying quasi-particles in different systems from the Poisson shot noise SI = 2q�I� [2] where �I� is the mean current of the system. For instance, the quasi-particle
charge is a fraction of the electron charge ‘e’ in the fractional quantum Hall regime
[3, 4, 5]. The multiple charge quanta were observed in an atomic point contact
between two superconducting electrodes [6].
Shot-noise also provides information on the statistics of the electron transfer.
Shot noise in general is suppressed from its classical value SI = 2e�I�, due to the
correlations. In mesoscopic conductors, due to the Pauli principle in fermion statistics,
electrons are highly correlated. As a results, the noise is fully suppressed in the
limit of a perfect open channel T = 1. For the opposite limit of low transmission
T � 1, transmission of electron follows a Poisson process and recovers the Schottky
result SI = 2e�I� [2]. For many channel systems, shot-noise is suppressed to
1/2 × 2e�I� for a symmetric double barrier junction [7, 8], to 1/3 in a disordered
wire [9, 10, 11, 12, 13, 14] and to 1/4 in an open chaotic cavity [15, 16, 17].
When a superconductor is involved, the shot-noise can be enhanced by virtue
of the Andreev reflection process taking place at the interface between a normal
metal and a superconductor. In some limiting cases, e.g. in the tunneling and
disordered limit, the shot-noise can be doubled with respect to its normal state
value [18, 19, 20, 21]. One of the main results of this thesis is an extensive comparison
of our experimental data on conductance and shot noise measurements in a S-N
junction with various theoretical models.
In addition to measure shot-noise in a two-terminal geometry, one can also perform
the fluctuation measurements on multi-terminal conductors. Whereas shotnoise corresponds to the autocorrelation of fluctuations from the same leads, crosscorrelation
measurements of fluctuations between different leads provide a wealth of
new experiments. For example, the exchange-correlations can be measured directly
from these geometry [22]. Experimental attempt in mesoscopic electronic device was
the correlation measurements [14, 23] on electron beam-splitter geometry [24] which
is the analogue to the Hanbury-Brown Twiss (HBT) experiment in optics. In their
experiment, Hanbury-Brown and Twiss demonstrated the intensity-intensity correlations
of the light of a star in order to determine its diameter [25]. They measured
a positive correlations between two different output photon beams as predicted to
the particles obeying Bose-Einstein statistics. This behavior is often called ‘bunching’.
On the other hand, a stream of the particles obeying Fermi-Dirac statistics
is expected to show a anti-bunching behavior, resulting in a negative correlation of
the intensity fluctuations. Latter one was confirmed by a Fermionic version of HBT
experiments in single-mode, high-mobility semiconductor 2DEG systems [14, 23].
Whereas in a single electron picture, correlations between Fermions are always
negative1 (anti-bunching), the correlation signal is expected to become positive if
two electrons are injected simultaneously to two arms and leave the device through
different leads for the coincident detection in both outputs2. One simple example is
the splitting of the cooper pair in a Y-junction geometry in front of the superconductor.
Fig.1.1 shows the possible experimental scheme of the correlation measurement
as described here and the sample realized in an high-mobility semiconductor heterostructures.
Since all three experiments were done3, only one left unfolded, ‘The
positive correlations from the Fermionic system’. The main motivation of this thesis
work was to find a positive correlations in the device shown in Fig.1.1. In a
well defined single channel collision experiment on an electron beam splitter, it has
theoretically been shown that the measured correlations are sensitive to the spin
entanglement [29, 30]. This is another even more exciting issue and we would like
to mention that the experimental quest for positive correlations is important for the
new field of quantum computation and communication in the solid state, [31, 32]
in which entangled electrons play a crucial role. A natural source of entanglement
is found in superconductors in which electrons are paired in a spin-singlet
state. A source of entangled electrons may therefore be based on a superconducting
injector.[33, 34, 27, 35, 36, 37, 38, 38, 39, 40, 41] Even more so, an electronic beamsplitter
is capable of distinguishing entangled electrons from single electrons.[29, 42]
However, the positive correlations have not been observed in solid-state mesoscopic
devices until today. This thesis is organized as follows. Chapter 2 is devoted to the theoretical
background of the electrical transport and the current fluctuations. We introduce
the basic concept of electrical transport and the shot noise in normal state and
superconductor-normal metal (S-N) junction. We also briefly review the theoretical
proposals and arguments about the current-current cross-correlations in threeterminal
systems. In Chapter 3, we describe the sample fabrication techniques which
have been done in our laboratory such as e-beam lithography, metallization and etching.
We present also the characterization of our particular system, niobium (Nb) /
InAs-based 2DEG junction. Chapter 4 describes the reliable low-temperature measurement
technique for detecting the noise. We characterize our measurement setup
using a simple RC-circuit model. In Chapter 5, our main results about the shot
noise of S-N junction are presented in detail
On-chip SQUID measurements in the presence of high magnetic fields
We report a low temperature measurement technique and magnetization data of a
quantum molecular spin, by implementing an on-chip SQUID technique. This
technique enables the SQUID magnetometery in high magnetic fields, up to 7
Tesla. The main challenges and the calibration process are detailed. The
measurement protocol is used to observe quantum tunneling jumps of the S=10
molecular magnet, Mn12-tBuAc. The effect of transverse field on the tunneling
splitting for this molecular system is addressed as well.Comment: 7 pages, 3 figure
The ALICE TPC, a large 3-dimensional tracking device with fast readout for ultra-high multiplicity events
The design, construction, and commissioning of the ALICE Time-Projection
Chamber (TPC) is described. It is the main device for pattern recognition,
tracking, and identification of charged particles in the ALICE experiment at
the CERN LHC. The TPC is cylindrical in shape with a volume close to 90 m^3 and
is operated in a 0.5 T solenoidal magnetic field parallel to its axis.
In this paper we describe in detail the design considerations for this
detector for operation in the extreme multiplicity environment of central
Pb--Pb collisions at LHC energy. The implementation of the resulting
requirements into hardware (field cage, read-out chambers, electronics),
infrastructure (gas and cooling system, laser-calibration system), and software
led to many technical innovations which are described along with a presentation
of all the major components of the detector, as currently realized. We also
report on the performance achieved after completion of the first round of
stand-alone calibration runs and demonstrate results close to those specified
in the TPC Technical Design Report.Comment: 55 pages, 82 figure
Active C4 electrodes for local field potential recording applications
Extracellular neural recording, with multi-electrode arrays (MEAs), is a powerful method used to study neural function at the network level. However, in a high density array, it can be costly and time consuming to integrate the active circuit with the expensive electrodes. In this paper, we present a 4 mm × 4 mm neural recording integrated circuit (IC) chip, utilizing IBM C4 bumps as recording electrodes, which enable a seamless active chip and electrode integration. The IC chip was designed and fabricated in a 0.13 μm BiCMOS process for both in vitro and in vivo applications. It has an input-referred noise of 4.6 μV rms for the bandwidth of 10 Hz to 10 kHz and a power dissipation of 11.25 mW at 2.5 V, or 43.9 μW per input channel. This prototype is scalable for implementing larger number and higher density electrode arrays. To validate the functionality of the chip, electrical testing results and acute in vivo recordings from a rat barrel cortex are presented.R01 NS072385 - NINDS NIH HHS; 1R01 NS072385 - NINDS NIH HH
Research pressure instrumentation for NASA Space Shuttle main engine, modification no. 5
The purpose of Modification No. 5 of this contract is to expand the scope of work (Task C) of this research study effort to develop pressure instrumentation for the SSME. The objective of this contract (Task C) is to direct Honeywell's Solid State Electronics Division's (SSED) extensive experience and expertise in solid state sensor technology to develop prototype pressure transducers which are targeted to meet the SSME performance design goals and to fabricate, test and deliver a total of 10 prototype units. SSED's basic approach is to effectively utilize the many advantages of silicon piezoresistive strain sensing technology to achieve the objectives of advanced state-of-the-art pressure sensors in terms of reliability, accuracy and ease of manufacture. More specifically, integration of multiple functions on a single chip is the key attribute of this technology which will be exploited during this research study
Digital Offset Calibration of an OPAMP Towards Improving Static Parameters of 90 nm CMOS DAC
In this paper, an on-chip self-calibrated 8-bit R-2R digital-to-analog converter (DAC) based on digitally compensated input offset of the operational amplifier (OPAMP) is presented. To improve the overall DAC performance, a digital offset cancellation method was used to compensate deviations in the input offset voltage of the OPAMP caused by process variations. The whole DAC as well as offset compensation circuitry were designed in a standard 90 nm CMOS process. The achieved results show that after the self-calibration process, the improvement of 48% in the value of DAC offset error is achieved
- …