CROSSTALK BASED SIDE CHANNEL ATTACKS IN FPGAs

As FPGA use becomes more diverse, the shared use of these devices becomes a security concern. Multi-tenant FPGAs that contain circuits from multiple independent sources or users will soon be prevalent in cloud and embedded computing environments. The recent discovery of a new attack vector using neighboring long wires in Xilinx SRAM FPGAs presents the possibility of covert information leakage from an unsuspecting user\u27s circuit. The work makes two contributions that extend this finding. First, we rigorously evaluate several Intel SRAM FPGAs and confirm that long wire information leakage is also prevalent in these devices. Second, we present the first successful attack on an unsuspecting circuit in an FPGA using information passively obtained from neighboring long-lines. Information obtained from a single AES S-box input wire combined with analysis of encrypted output is used to rapidly expose an AES key. This attack is performed remotely without modifying the victim circuit, using electromagnetic probes or power measurements, or modifying the FPGA in any way. We show that our approach is effective for three different FPGA devices. Our results demonstrate that the attack can recover encryption keys from AES circuits running at 50MHz. Finally, we present results from the AES attack performed using a cloud FPGA in a Microsoft Project Catapult cluster. These experiments show the effect can be used to attack a remotely-accessed cloud FPGA

Exploration of Ring Oscillator Based Temperature Sensors Network Accuracy on FPGA

During the last decades, technology scaling in reconfigurable logic devices enabled implementing complicated designs which results in higher power density and on-chip temperature. Since higher operating temperature of chips is a critical problem in electronics devices, thermal management techniques are highly required. To provide a thermal map of reconfigurable logic devices, a network of sensors is needed. In this work, a ring-oscillator-based temperature sensor is used to create a sensor network. Then, a design space exploration is done among several sensor networks with the various sensor configurations including different ring oscillator length, the number of sensors in the examined network and various sampling time. We propose three criteria for exploring and comparing the efficiency of sensors network based on the thermal overhead and also measurement accuracy and precision among plenty of configurations on the Virtex-6 FPGA

Reconfigurable time interval measurement circuit incorporating a programmable gain time difference amplifier

PhD ThesisAs further advances are made in semiconductor manufacturing technology the performance of circuits is continuously increasing. Unfortunately, as the technology node descends deeper into the nanometre region, achieving the potential performance gain is becoming more of a challenge; due not only to the effects of process variation but also to the reduced timing margins between signals within the circuit creating timing problems. Production Standard Automatic Test Equipment (ATE) is incapable of performing internal timing measurements due, first to the lack of accessibility and second to the overall timing accuracy of the tester which is grossly inadequate. To address these issue ‘on-chip’ time measurement circuits have been developed in a similar way that built in self-test (BIST) evolved for ‘on-chip’ logic testing. This thesis describes the design and analysis of three time amplifier circuits. The analysis undertaken considers the operational aspects related to gain and input dynamic range, together with the robustness of the circuits to the effects of process, voltage and temperature (PVT) variations. The design which had the best overall performance was subsequently compared to a benchmark design, which used the ‘buffer delay offset’ technique for time amplification, and showed a marked 6.5 times improvement on the dynamic range extending this from 40 ps to 300ps. The new design was also more robust to the effects of PVT variations. The new time amplifier design was further developed to include an adjustable gain capability which could be varied in steps of approximately 7.5 from 4 to 117. The time amplifier was then connected to a 32-stage tapped delay line to create a reconfigurable time measurement circuit with an adjustable resolution range from 15 down to 0.5 ps and a dynamic range from 480 down to 16 ps depending upon the gain setting. The overall footprint of the measurement circuit, together with its calibration module occupies an area of 0.026 mm2 The final circuit, overall, satisfied the main design criteria for ‘on-chip’ time measurement circuitry, namely, it has a wide dynamic range, high resolution, robust to the effects of PVT and has a small area overhead.Umm Al-Qura University

High-Performance Silicon Nanowire Electronics

This thesis explores 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications via the fabrication and testing of SiNW-based ring oscillators. Both SiNW surface treatments and dielectric annealing are reported for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~108), low drain-induced barrier lowering (~30 mV), high carrier mobilities (~269 cm2/V•s), and low subthreshold swing (~80 mV/dec). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs is explored as well. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications. A set of novel charge-trap non-volatile memory devices based on high-performance SiNW FETs are well investigated. These memory devices integrate Fe2O3 quantum dots (FeO QDs) as charge storage elements. A template-assisted assembly technique is used to align FeO QDs into a close-packed, ordered matrix within the trenches that separate highly aligned SiNWs, and thus store injected charges. A Fowler-Nordheim tunneling mechanism describes both the program and erase operations. The memory prototype demonstrates promising characteristics in terms of large threshold voltage shift (~1.3 V) and long data retention time (~3 × 106 s), and also allows for key components to be systematically varied. For example, varying the size of the QDs indicates that larger diameter QDs exhibit a larger memory window, suggesting the QD charging energy plays an important role in the carrier transport. The device temperature characteristics reveal an optimal window for device performance between 275K and 350K. The flexibility of integrating the charge-trap memory devices with the SiNW logic devices offers a low-cost embedded non-volatile memory solution. A building block for a SiNW-based field-programmable gate array (FPGA) is proposed in the future work.</p