A theory for magnetic-field effects of nonmagnetic organic semiconducting materials

A universal mechanism for strong magnetic-field effects of nonmagnetic organic semiconductors is presented. A weak magnetic field (less than hundreds mT) can substantially change the charge carrier hopping coefficient between two neighboring organic molecules when the magnetic length is not too much longer than the molecule-molecule separation and localization length of electronic states involved. Under the illumination of lights or under a high electric field, the change of hopping coefficients leads also to the change of polaron density so that photocurrent, photoluminescence, electroluminescence, magnetoresistance and electrical-injection current become sensitive to a weak magnetic field. The present theory can not only explain all observed features, but also provide a solid theoretical basis for the widely used empirical fitting formulas.Comment: 4 pages, 2 figure

Quantum coherence and carriers mobility in organic semiconductors

We present a model of charge transport in organic molecular semiconductors based on the effects of lattice fluctuations on the quantum coherence of the electronic state of the charge carrier. Thermal intermolecular phonons and librations tend to localize pure coherent states and to assist the motion of less coherent ones. Decoherence is thus the primary mechanism by which conduction occurs. It is driven by the coupling of the carrier to the molecular lattice through polarization and transfer integral fluctuations as described by the hamiltonian of Gosar and Choi. Localization effects in the quantum coherent regime are modeled via the Anderson hamiltonian with correlated diagonal and non-diagonal disorder leading to the determination of the carrier localization length. This length defines the coherent extension of the ground state and determines, in turn, the diffusion range in the incoherent regime and thus the mobility. The transfer integral disorder of Troisi and Orlandi can also be incorporated. This model, based on the idea of decoherence, allowed us to predict the value and temperature dependence of the carrier mobility in prototypical organic semiconductors that are in qualitative accord with experiments

Gated nonlinear transport in organic polymer field effect transistors

We measure hole transport in poly(3-hexylthiophene) field effect transistors with channel lengths from 3 $\mu$m down to 200 nm, from room temperature down to 10 K. Near room temperature effective mobilities inferred from linear regime transconductance are strongly dependent on temperature, gate voltage, and source-drain voltage. As $T$ is reduced below 200 K and at high source-drain bias, we find transport becomes highly nonlinear and is very strongly modulated by the gate. We consider whether this nonlinear transport is contact limited or a bulk process by examining the length dependence of linear conduction to extract contact and channel contributions to the source-drain resistance. The results indicate that these devices are bulk-limited at room temperature, and remain so as the temperature is lowered. The nonlinear conduction is consistent with a model of Poole-Frenkel-like hopping mechanism in the space-charge limited current regime. Further analysis within this model reveals consistency with a strongly energy dependent density of (localized) valence band states, and a crossover from thermally activated to nonthermal hopping below 30 K.Comment: 22 pages, 7 figures, accepted to J. Appl. Phy