Degradation in FPGAs: Monitoring, Modeling and Mitigation

This dissertation targets the transistor aging degradation as well as the associated thermal challenges in FPGAs (since there is an exponential relation between aging and chip temperature). The main objectives are to perform experimentation, analysis and device-level model abstraction for modeling the degradation in FPGAs, then to monitor the FPGA to keep track of aging rates and ultimately to propose an aging-aware FPGA design flow to mitigate the aging

Cross-Layer Resiliency Modeling and Optimization: A Device to Circuit Approach

The never ending demand for higher performance and lower power consumption pushes the VLSI industry to further scale the technology down. However, further downscaling of technology at nano-scale leads to major challenges. Reduced reliability is one of them, arising from multiple sources e.g. runtime variations, process variation, and transient errors. The objective of this thesis is to tackle unreliability with a cross layer approach from device up to circuit level

차세대 반도체 배선을 위한 코발트 합금 자가형성 확산방지막 재료 설계 및 전기적 신뢰성에 대한 연구

학위논문(박사) -- 서울대학교대학원 : 공과대학 재료공학부, 2022.2. 주영창.Recently, the resistance-capacitance (RC) delay of the Cu interconnects in metal 1 (M1) level has been increased rapidly due to the reduction of the interconnect linewidth along with the transistor scaling down, and the interconnect reliability becomes a severe issue again. In order to overcome interconnect performance problems and move forward to the next-generation interconnects system, study on low resistivity (ρo) and low electron mean free path (λ) metals was conducted. Generally, metals such as Cobalt (Co), Ruthenium (Ru), and Molybdenum (Mo) are mentioned as candidates for next-generation interconnect materials, and since they have a low ρo × λ value, it is expected that the influence of interface scatterings and surface scattering can be minimized. However, harsh operating environments such as high electric fields, critical Joule heating, and reduction of the pitch size are severely deteriorating the performance of electronic devices as well as device reliability. For example, since time dependent dielectric breakdown (TDDB) problems for next-generation interconnect system have been reported recently, it is necessary to study alternative barrier materials and processes to improve the interconnect reliability. Specifically, extrinsic dielectric breakdown due to penetration of Co metal ions in high electric fields has been reported as a reliability problem to be solved in Co interconnect systems. Therefore, there is a need for new material system design and research on a robust diffusion barrier that prevents metal ions from penetrating into the dielectric, thereby improving the reliability of Co interconnects. Moreover, in order to lower the resistance of the interconnect, it is necessary to develop an ultra-thin barrier. This is because even a barrier with good reliability characteristics will degrade chip performance if it takes up a lot of volume in the interconnect. The recommended thickness for a single diffusion barrier layer is currently reported to be less than 2.5 nm. As a result, it is essential to develop materials that comprehensively consider performance and reliability. In this study, we designed a Co alloy self-forming barrier (SFB) material that can make sure of low resistance and high reliability for Co interconnects, which is attracting attention as a next-generation interconnect system. The self-forming barrier methodology induces diffusion of an alloy dopant at the interface between the metal and the dielectric during the annealing process. And the diffused dopant reacts with the dielectric to form an ultra-thin diffusion barrier. Through this methodology, it is possible to improve reliability by preventing the movement of metal ions. First of all, material design rules were established to screen the appropriate alloy dopants and all CMOS-compatible metals were investigated. Dopant resistivity, intermetallic compound formation, solubility in Co, activity coefficient in Co, and oxidation tendency is considered as the criteria for the dopant to escape from the Co matrix and react at the Co/SiO2 interface. In addition, thermodynamic calculations were performed to predict which phases would be formed after the annealing process. Based on thermodynamic calculations, 5 dopant metals were selected, prioritized for self-forming behavior. And the self-forming material was finally selected through thin film and device analysis. We confirmed that Cr, Zn, and Mn out-diffused to the surface of the thin film structure using X-ray photoelectron spectroscopy (XPS) depth profile and investigated the chemical state of out-diffused dopants through the analysis of a binding energy. Cr shows the most ideal self-forming behavior with the SiO2 dielectric and reacted with oxygen to form a Cr2O3 barrier. In metal-insulator-semiconductor (MIS) structure, out-diffused Cr reacts with SiO2 at the interface and forms a self-formed single layer. It was confirmed that the thickness of the diffusion barrier layer is about 1.2 nm, which is an ultra-thin layer capable of minimizing the total effective resistance. Through voltage-ramping dielectric breakdown (VRDB) tests, Co-Cr alloy showed highest breakdown voltage (VBD) up to 200 % than pure Co. The effect of Cr doping concentration and heat treatment condition applicable to the interconnect process was confirmed. When Cr was doped less than 1 at%, the robust electrical reliability was exhibited. Also, it was found that a Cr2O3 interfacial layer was formed when annealing process was performed at 250 °C or higher for 30 minutes or longer. In other words, Co-Cr alloy is well suited for the interconnect process because current interconnect process temperature is below 400 °C. And when the film thickness was lowered from 150 nm to 20 nm, excellent VBD values were confirmed even at high Cr doping concentration (~7.5 at%). It seems that the amount of Cr present at the Co/SiO2 interface plays a very important role in improving the Cr oxide SFB quality. Physical modeling is necessary to understand the amount of Cr at the interface according to the interconnect volumes and the reliability of the Cr oxide self-forming barrier. TDDB lifetime test also performed and Co-Cr alloy interconnect shows a highly reliable diffusion barrier property of self-formed interfacial layer. The DFT analysis also confirmed that Cr2O3 is a very promising barrier material because it showed a higher energy barrier value than the TiN diffusion barrier currently being studied. A Co-based self-forming barrier was designed through thermodynamic calculations that take performance and reliability into account in interconnect material system. A Co interconnect system with an ultra-thin Cr2O3 diffusion barrier with excellent reliability is proposed. Through this design, it is expected that high-performance interconnects based on robust reliability in the advanced interconnect can be implemented in the near future.최근 반도체 소자 스케일링에 따른 배선 선폭 감소로 M0, M1영역에서의 metal 비저항이 급격히 증가하여 배선에서의 RC delay가 다시 한번 크게 문제가 되고 있다. 이를 해결하기 위해서 차세대 배선 시스템에서는 낮은 비저항과 electron mean free path (EMFP)을 가지는 물질 연구가 진행되었다. 대표적으로 Co, Ru, Mo와 같은 금속들이 차세대 배선 재료 후보로 언급되고 있으며 낮은 ρ0 × λ 값을 갖기 때문에 interface (surface) scattering과 grain boundary scattering 영향을 최소화할 수 있을 것으로 보고 있다. 하지만 가혹한 electrical field와 높은 Joule heating이 발생하는 동작 환경으로 인해 performance뿐만 아니라 소자 신뢰성이 더 열악한 상황에 놓여있다. 예를 들어 차세대 금속에 대한 time dependent dielectric breakdown (TDDB) 신뢰성 문제가 보고되고 있기 때문에 이를 보안할 확산방지막 물질 및 공정연구가 필요하다. 특히 높은 전기장에서 Co ion이 유전체로 침투하여 extrinsic dielectric breakdown 신뢰성 문제가 최근 보고되고 있다. 따라서 금속 이온이 유전체 내부로 침투하는 것을 방지하여, Co 배선의 신뢰성을 향상시킬 수 견고한 확산방지막 개발 및 새로운 배선 시스템 설계가 필요한 시점이다. 또한, 배선 저항을 낮추기 위해서는 매우 얇은 확산방지막 개발이 필요하다. 신뢰성이 좋은 확산방지막이라도 배선에서 많은 영역을 차지할 경우 전체 성능이 저하되기 때문이다. Cu 확산방지막으로 사용되고 있는 TaN 층은 2.5 nm 보다 얇을 경우 신뢰성이 급격히 나빠지므로 2.5 nm보다 얇은 두께의 견고한 확산방지막 개발이 필요하다. 본 연구는 차세대 반도체 배선 물질로 주목받고 있는 Co 금속에 대하여 저저항·고신뢰성을 확보할 수 있는 Co alloy 자가형성 확산방지막 (Co alloy self-forming barrier, SFB) 소재 디자인하였다. 자가형성 확산방지막 방법론은 열처리 과정에서 금속과 유전체 계면에서 도펀트가 확산하게 된다. 그리고 확산되니 도펀트는 얇은 확산방지막을 형성하는 방법론이다. 이 방법론을 통해 금속 이온의 이동을 방지하여 Co 배선 신뢰성을 향상시킬 수 있을 것으로 예상하였다. 우선, Co 합금상에서 적절한 도펀트를 찾기 위해서 CMOS 공정에 적용 가능한 금속들을 선별하였다. 도펀트 저항, 금속간 화합물 형성 여부, Co내 고용도, Co alloy에서의 활성계수, 산화도, Co/SiO2 계면에서의 안정상을 열역학적 계산을 통해서 물질 선정 기준으로 세웠다. 열역학적 계산을 기반으로 9개의 도펀트 금속이 선택되었으며, Co 합금 자가형성 확산방지막 기준에 따라서 우선 순위를 지정하였다. 그리고 최종적으로 박막과 소자 신뢰성 평가를 통해서 가장 적합한 자가형성 확산방지막 물질을 선정하였다. X-ray photoelectron spectroscopy (XPS) 분석을 이용하여 Cr, Zn, Mn이 박막 구조의 표면으로 외부 확산 여부를 확인하고 결합 에너지 분석을 통해 외부로 확산된 도펀트의 화학적 상태를 조사하였다. 분석 결과 Cr, Zn, Mn이 유전체 계면으로 확산되어 산소와 반응하여oxide/silicate 확산 방지막 (e.g. Cr2O3, Zn2SiO4, MnSiO3)을 형성한 것을 확인하였다. 그 중 Cr은 SiO2 유전체와 함께 가장 이상적인 자기 형성 거동을 나타내며 산소와 반응하여 Cr2O3 층을 형성하는 것을 확인하였다. MIS (Metal-Insulator-Semiconductor) 구조에서도 외부로 확산된 Cr은 계면에서 SiO2와 반응하여 Cr2O3 자가형성 확산방지막이 형성되었다. 확산방지층의 두께는 약 1.2nm로 전체 유효저항을 최소화할 수 있는 충분히 얇은 두께를 확보하였다. VRDB (Voltage-Ramping Dielectric Breakdown) 테스트를 통해 Co-Cr 합금은 순수 Co보다 최대 200% 높은 항복 전압 (breakdown voltage)을 보였다. 반도체 배선 공정에 적용할 수 있는 Cr 도핑 농도와 열처리 조건의 영향을 확인하였다. Cr이 1at% 미만으로 도핑되었을 때 우수한 전기적 신뢰성을 나타내었다. 또한, 250℃ 이상에서 30분 이상 열처리를 하였을 때 Cr2O3 계면층이 형성됨을 알 수 있었다. 즉, 현재 배선 공정 온도가 400°C 미만이기 때문에 Co-Cr 합금이 배선 공정에 적용 가능함을 확인하였다. TDDB 수명 테스트도 수행되었으며 Co-Cr 합금 배선은 자체 형성된 계면층의 매우 안정적인 확산 장벽 특성을 보여주었다. DFT 분석은 Cr2O3자가형성 확산방지막이 현재 연구되고 있는 TiN 확산 장벽보다 더 높은 에너지 장벽 값을 보여주기 때문에 매우 유망한 확산방지막임을 보여주었다. 본 연구는 반도채 배선 물질 시스템에서 성능과 신뢰성을 고려한 열역학적 계산을 통해 Co 기반 자가형성 확산방지막을 설계하였다. 실험 결과 신뢰성이 우수하고 아주 얇은 Cr2O3 확산방지막이 있는 Co-Cr 합금이 제안하였다. 물질 설계와 전기적 신뢰성 검증을 Co/Cr2O3/SiO2 물질 시스템을 제안하였고 앞으로의 다가올 차세대 배선에서 구현될 수 있을 것으로 기대된다.Abstract i Table of Contents v List of Tables ix List of Figures xii Chapter 1. Introduction 1 1.1. Scaling down of VLSI systems 1 1.2. Driving force of interconnect system evolution 7 1.3. Driving force of beyond Cu interconnects 11 1.4. Objective of the thesis 18 1.5. Organization of the thesis 21 Chapter 2. Theoretical Background 22 2.1. Evolution of interconnect systems 22 2.1.1. Cu/barrier/low-k interconnect system 22 2.1.2. Process developments for interconnect reliability 27 2.1.3. 3rd generation of interconnect system 31 2.2 Thermodynamic tools for Co self-forming barrier 42 2.2.1 Binary phase diagram 42 2.2.2 Ellingham diagram 42 2.2.3 Activity coefficient 43 2.3. Reliability of Interconnects 45 2.3.1. Current conduction mechanisms in dielectrics 45 2.3.2. Reliability test vehicles 50 2.3.3. Dielectric breakdown assessment 52 2.3.4. Dielectric breakdown mechanisms 55 2.3.5. Reliability test: VRDB and TDDB 56 2.3.6. Lifetime models 57 Chapter 3. Experimental Procedures 60 3.1. Thin film deposition 60 3.1.1. Substrate preparation 60 3.1.2. Oxidation 61 3.1.3. Co alloy deposition using DC magnetron sputtering 61 3.1.4. Annealing process 65 3.2. Thin film characterization 67 3.2.1. Sheet resistance 67 3.2.2. X-ray photoelectron spectroscopy (XPS) 68 3.3. Metal-Insulator-Semiconductor (MIS) device fabrication 70 3.3.1. Patterning using lift-off process 70 3.3.2. TDDB packaging 72 3.4. Reliability analysis 74 3.4.1. Electrical reliability analysis 74 3.4.2. Transmission electron microscopy (TEM) analysis 75 3.5. Computation 76 3.5.1 FactsageTM calculation 76 3.5.2. Density Functional Theory (DFT) calculation 77 Chapter 4. Co Alloy Design for Advanced Interconnects 78 4.1. Material design of Co alloy self-forming barrier 78 4.1.1. Rule of thumb of Co-X alloy 78 4.1.2. Co alloy phase 80 4.1.3. Out-diffusion stage 81 4.1.4. Reaction step with SiO2 dielectric 89 4.1.5. Comparison criteria 94 4.2. Comparison of Co alloy candidates 97 4.2.1. Thin film resistivity evaluation 97 4.2.2. Self-forming behavior using XPS depth profile analysis 102 4.2.3. MIS device reliability test 110 4.3 Summary 115 Chapter 5. Co-Cr Alloy Interconnect with Robust Self-Forming Barrier 117 5.1. Compatibility of Co-Cr alloy SFB process 117 5.1.1. Effect of Cr doping concentration 117 5.1.2. Annealing process condition optimization 119 5.2. Reliability of Co-Cr interconnects 122 5.2.1. VRDB quality test with Co-Cr alloys 122 5.2.2. Lifetime evaluation using TDDB method 141 5.2.3. Barrier mechanism using DFT 142 5.3. Summary 145 Chapter 6. Conclusion 148 6.1. Summary of results 148 6.2. Research perspectives 150 References 151 Abstract (In Korean) 166 Curriculum Vitae 169박

Thermal-Aware Networked Many-Core Systems

Advancements in IC processing technology has led to the innovation and growth happening in the consumer electronics sector and the evolution of the IT infrastructure supporting this exponential growth. One of the most difficult obstacles to this growth is the removal of large amount of heatgenerated by the processing and communicating nodes on the system. The scaling down of technology and the increase in power density is posing a direct and consequential effect on the rise in temperature. This has resulted in the increase in cooling budgets, and affects both the life-time reliability and performance of the system. Hence, reducing on-chip temperatures has become a major design concern for modern microprocessors. This dissertation addresses the thermal challenges at different levels for both 2D planer and 3D stacked systems. It proposes a self-timed thermal monitoring strategy based on the liberal use of on-chip thermal sensors. This makes use of noise variation tolerant and leakage current based thermal sensing for monitoring purposes. In order to study thermal management issues from early design stages, accurate thermal modeling and analysis at design time is essential. In this regard, spatial temperature profile of the global Cu nanowire for on-chip interconnects has been analyzed. It presents a 3D thermal model of a multicore system in order to investigate the effects of hotspots and the placement of silicon die layers, on the thermal performance of a modern ip-chip package. For a 3D stacked system, the primary design goal is to maximise the performance within the given power and thermal envelopes. Hence, a thermally efficient routing strategy for 3D NoC-Bus hybrid architectures has been proposed to mitigate on-chip temperatures by herding most of the switching activity to the die which is closer to heat sink. Finally, an exploration of various thermal-aware placement approaches for both the 2D and 3D stacked systems has been presented. Various thermal models have been developed and thermal control metrics have been extracted. An efficient thermal-aware application mapping algorithm for a 2D NoC has been presented. It has been shown that the proposed mapping algorithm reduces the effective area reeling under high temperatures when compared to the state of the art.Siirretty Doriast

Oxygen carrier and reactor development for chemical looping processes and enhanced CO2 recovery

This thesis’s main focus is a CO2 capture technology known as chemical looping combustion (CLC). The technology is a novel form of combustion and fuel processing that can be applied to gas, solid and liquid fuels. By using two interconnected fluidised-bed reactors, with a bed material capable of transferring oxygen from air to the fuel, a stream of almost pure CO2 can be produced. This stream is undiluted with nitrogen and is produced without any direct process efficiency loss from the overall combustion process. The heart of the process is the oxygen carrier bed material, which transfers oxygen from an air to fuel reactor for the conversion of the fuel. Oxygen carrier materials and their production should be of low relative cost for use in large-scale systems. The first part of this research centres on development and investigative studies conducted to assess the use of low-cost materials as oxygen carriers and as supports. Mixed-oxide oxygen carriers of modified manganese ore and iron ore were produced by impregnation. While copper (II) oxide supported on alumina cement and CaO have been produced by pelletisation. These oxygen carriers were investigated for their ability to convert gaseous fuels in a lab-scale fluidised bed, and characterised for their mechanical and chemical suitability in the CLC process. The modified ores and pelletised copper-based oxygen carriers’ mechanical properties were enhanced by their production methods and in the case of the modified iron ore, significant oxygen uncoupling was observed. The copper-based oxygen carriers particularly those containing alumina cement showed high conversion rates of gaseous fuels and improved mechanical stability. The second part of this research thesis focuses on the design philosophy, commissioning and operation of a dual-fast bed chemical looping pilot reactor. Based on the operational experience, recommendations for modifications to the CLC system are discussed. In support, a parallel hydrodynamic investigation has been conducted to validate control and operational strategies for the newlydesigned reactor system. It was determined that the two fast bed risers share similar density and pressure profiles. Stable global circulation rate is flexible and could be maintained despite being pneumatically controlled. Reactor-reactor leakage via the loop-seals is sensitive to loop seal bed-height, and inlet fluid velocity but can be maintained as such to ensure no leakage is encountered

Enhancing Power Efficient Design Techniques in Deep Submicron Era

Excessive power dissipation has been one of the major bottlenecks for design and manufacture in the past couple of decades. Power efficient design has become more and more challenging when technology scales down to the deep submicron era that features the dominance of leakage, the manufacture variation, the on-chip temperature variation and higher reliability requirements, among others. Most of the computer aided design (CAD) tools and algorithms currently used in industry were developed in the pre deep submicron era and did not consider the new features explicitly and adequately. Recent research advances in deep submicron design, such as the mechanisms of leakage, the source and characterization of manufacture variation, the cause and models of on-chip temperature variation, provide us the opportunity to incorporate these important issues in power efficient design. We explore this opportunity in this dissertation by demonstrating that significant power reduction can be achieved with only minor modification to the existing CAD tools and algorithms. First, we consider peak current, which has become critical for circuit's reliability in deep submicron design. Traditional low power design techniques focus on the reduction of average power. We propose to reduce peak current while keeping the overhead on average power as small as possible. Second, dual Vt technique and gate sizing have been used simultaneously for leakage savings. However, this approach becomes less effective in deep submicron design. We propose to use the newly developed process-induced mechanical stress to enhance its performance. Finally, in deep submicron design, the impact of on-chip temperature variation on leakage and performance becomes more and more significant. We propose a temperature-aware dual Vt approach to alleviate hot spots and achieve further leakage reduction. We also consider this leakage-temperature dependency in the dynamic voltage scaling approach and discover that a commonly accepted result is incorrect for the current technology. We conduct extensive experiments with popular design benchmarks, using the latest industry CAD tools and design libraries. The results show that our proposed enhancements are promising in power saving and are practical to solve the low power design challenges in deep submicron era

Large scale reconfigurable analog system design enabled through floating-gate transistors

This work is concerned with the implementation and implication of non-volatile charge storage on VLSI system design. To that end, the floating-gate pFET (fg-pFET) is considered in the context of large-scale arrays. The programming of the element in an efficient and predictable way is essential to the implementation of these systems, and is thus explored. The overhead of the control circuitry for the fg-pFET, a key scalability issue, is examined. A light-weight, trend-accurate model is absolutely necessary for VLSI system design and simulation, and is also provided. Finally, several reconfigurable and reprogrammable systems that were built are discussed.Ph.D.Committee Chair: Hasler, Paul E.; Committee Member: Anderson, David V.; Committee Member: Ayazi, Farrokh; Committee Member: Degertekin, F. Levent; Committee Member: Hunt, William D

Performance of charge-injection-device infrared detector arrays at low and moderate backgrounds

Three 2 x 64 element charge injection device infrared detector arrays were tested at low and moderate background to evaluate their usefulness for space based astronomical observations. Testing was conducted both in the laboratory and in ground based telescope observations. The devices showed an average readout noise level below 200 equivalent electrons, a peak responsivity of 4 A/W, and a noise equivalent power of 3x10 sq root of W/Hz. Array well capacity was measured to be significantly smaller than predicted. The measured sensitivity, which compares well with that of nonintegrating discrete extrinsic silicon photoconductors, shows these arrays to be useful for certain astronomical observations. However, the measured readout efficiency and frequency response represent serious limitations in low background applications