11 research outputs found

    Institute of Ion Beam Physics and Materials Research: Annual Report 2001

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    Summary of the scientific activities of the institute in 2001 including selected highlight reports, short research contributions and an extended statistics overview

    Institute of Ion Beam Physics and Materials Research: Annual Report 2002

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    Summary of the scientific activities of the institute in 2002 including selected highlight reports, short research contributions and an extended statistics overview

    Institute of Ion Beam Physics and Materials Research; Annual Report 1999

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    Summary of the Scientific Activities of the Institute in 1999: Highlight Reports / Short Contributions / Statistic

    Contact and source/drain engineering for advanced III-V field-effect transistors

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    Ph.DDOCTOR OF PHILOSOPH

    Physics and Technology of Silicon Carbide Devices

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    Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness

    Development of InAlN HEMTs for space application

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    This thesis investigates the emerging InAlN high electron mobility transistor (HEMT) technology with respect to its application in the space industry. The manufacturing processes and device performance of InAlN HEMTs were compared to AlGaN HEMTs, also produced as part of this work. RF gain up to 4 GHz was demonstrated in both InAlN and AlGaN HEMTs with gate lengths of 1 μm, with InAlN HEMTs generally showing higher channel currents (~150 c.f. 60 mA/mm) but also degraded leakage properties (~ 1 x 10-4 c.f. < 1 x 10-8 A/mm) with respect to AlGaN. An analysis of device reliability was undertaken using thermal stability, radiation hardness and off-state breakdown measurements. Both InAlN and AlGaN HEMTs showed excellent stability under space-like conditions, with electrical operation maintained after exposure to 9.2 Mrad of gamma radiation at a dose rate of 6.6 krad/hour over two months and after storage at 250°C for four weeks. Furthermore a link was established between the optimisation of device performance (RF gain, power handling capabilities and leakage properties) and reliability (radiation hardness, thermal stability and breakdown properties), particularly with respect to surface passivation. Following analysis of performance and reliability data, the InAlN HEMT device fabrication process was optimised by adjusting the metal Ohmic contact formation process (specifically metal stack thicknesses and anneal conditions) and surface passivation techniques (plasma power during dielectric layer deposition), based on an existing AlGaN HEMT process. This resulted in both a reduction of the contact resistivity to around 1 x 10-4 Ω.cm2 and the suppression of degrading trap-related effects, bringing the measured gate-lag close to zero. These discoveries fostered a greater understanding of the physical mechanisms involved in device operation and manufacture, which is elaborated upon in the final chapter

    Advance in Energy Harvesters/Nanogenerators and Self-Powered Sensors

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    This reprint is a collection of the Special Issue "Advance in Energy Harvesters/Nanogenerators and Self-Powered Sensors" published in Nanomaterials, which includes one editorial, six novel research articles and four review articles, showcasing the very recent advances in energy-harvesting and self-powered sensing technologies. With its broad coverage of innovations in transducing/sensing mechanisms, material and structural designs, system integration and applications, as well as the timely reviews of the progress in energy harvesting and self-powered sensing technologies, this reprint could give readers an excellent overview of the challenges, opportunities, advancements and development trends of this rapidly evolving field

    EUROSENSORS XVII : book of abstracts

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    Fundação Calouste Gulbenkien (FCG).Fundação para a Ciência e a Tecnologia (FCT)

    TCAD study of DLC coatings for large-area high-power diodes

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    The most relevant transport features of doped diamond-like carbon (DLC) films have been implemented in a TCAD setup to provide a theoretical tool to assess the reliability expectations for high-voltage device passivation. Starting from the band structure and boundary conditions of a metal-insulator-semiconductor (MIS) device, trap states in the bandgap have been used to determine the characteristics of differently doped DLC layers against experiments. The role of the DLC as a passivation layer on top of the bevel termination of a high-voltage diode has been studied and compared with experiments. The breakdown voltage is significantly influenced by the properties of the DLC as clearly explained by the TCAD simulation results
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