Stability of grid amplifiers

We present a stability model for quasi-optical grid amplifiers. This model is useful for predicting and suppressing the common-mode oscillations that often occur in amplifier grids. Three stabilization techniques will be discussed. The first technique uses a capacitor to stabilize the grid. The second approach employs resistance to suppress the oscillations. The final technique stabilizes the grid by reducing the on-chip common-mode resistance, allowing greatly increased amplifier efficiencies. Experimental evidence will be presented to confirm the validity of our stability model

Monolithic Millimeter-ware Frequency Multipliers

l'obbiettivo di questa tesi è la progettazione di moltiplicatori di frequenza monolitici in tecnologia INFINEON SiGe bipolare. I moltiplicatori progettati sono frequency octuplers basati su tre frequency doublers in cascata seguiti da un buffer d'uscita.Due differenti frequency octuplers sono stati progettati. Ciascun frequency doubler è basato sulla cella di GilbertopenEmbargo temporane

24 GHz low-power switch-channel CMOS transceiver for wireless localization

Dieser Beitrag ist mit Zustimmung des Rechteinhabers aufgrund einer (DFG geförderten) Allianz- bzw. Nationallizenz frei zugänglich.This publication is with permission of the rights owner freely accessible due to an Alliance licence and a national licence (funded by the DFG, German Research Foundation) respectively.A 24 GHz low-power transceiver is designed, fabricated, and characterized using 130 nm complementary metal-oxide semiconductor (CMOS) process. The designed transceiver is targeted for frequency-modulated-continuous-wave (FMCW) wireless local positioning. The transceiver includes four switchable receiving channels, one transmitting channel and local-oscillator generation circuitries. Several power-saving techniques are implemented, such as switch channel and adaptive mixer biasing. The design aspects of the low-power circuit blocks and integration considerations are presented in details. The integrated transceiver has a chip area of only 2.2 mm × 1.7 mm. In transmitting mode the transceiver achieves an output power of 4 dBm and phase noise of −90 dBc/Hz at 1 MHz, while consuming 75 mW power consumption under 1.5 V power supply. In switch-channel receiving mode the transceiver demonstrates 31 dB gain and 6 dB noise figure with 65 mW power consumption. The transceiver measurements compare well with the simulated results and achieve state-of-the-art performance with very low-power consumption.BMBF, 16SV3654, Low Power Wireless Sensor Network with Localisation (LOWILO

Trends and Challenges in CMOS Design for Emerging 60 GHz WPAN Applications

International audienceThe extensive growth of wireless communications industry is creating a big market opportunity. Wireless operators are currently searching for new solutions which would be implemented into the existing wireless communication networks to provide the broader bandwidth, the better quality and new value-added services. In the last decade, most commercial efforts were focused on the 1-10 GHz spectrum for voice and data applications for mobile phones and portable computers (Niknejad & Hashemi, 2008). Nowadays, the interest is growing in applications that use high rate wireless communications. Multigigabit- per-second communication requires a very large bandwidth. The Ultra-Wide Band (UWB) technology was basically used for this issue. However, this technology has some shortcomings including problems with interference and a limited data rate. Furthermore, the 3-5 GHz spectrum is relatively crowded with many interferers appearing in the WiFi bands (Niknejad & Hashemi, 2008). The use of millimeter wave frequency band is considered the most promising technology for broadband wireless. In 2001, the Federal Communications Commission (FCC) released a set of rules governing the use of spectrum between 57 and 66 GHz (Baldwin, 2007). Hence, a large bandwidth coupled with high allowable transmit power equals high possible data rates. Traditionally the implementation of 60 GHz radio technology required expensive technologies based on III-V compound semiconductors such as InP and GaAs (Smulders et al., 2007). The rapid progress of CMOS technology has enabled its application in millimeter wave applications. Currently, the transistors became small enough, consequently fast enough. As a result, the CMOS technology has become one of the most attractive choices in implementing 60 GHz radio due to its low cost and high level of integration (Doan et al., 2005). Despite the advantages of CMOS technology, the design of 60 GHz CMOS transceiver exhibits several challenges and difficulties that the designers must overcome. This chapter aims to explore the potential of the 60 GHz band in the use for emergent generation multi-gigabit wireless applications. The chapter presents a quick overview of the state-of-the-art of 60 GHz radio technology and its potentials to provide for high data rate and short range wireless communications. The chapter is organized as follows. Section 2 presents an overview about 60 GHz band. The advantages are presented to highlight the performance characteristics of this band. The opportunities of the physical layer of the IEEE 802.15.3c standard for emerging WPAN applications are discussed in section 3. The tremendous opportunities available with CMOS technology in the design of 60 GHz radio is discussed in section 4. Section 5 shows an example of 60 GHz radio system link. Some challenges and trade-offs on the design issues of circuits and systems for 60 GHz band are reported in section 6. Finally, section 7 presents the conclusion and some perspectives on future directions

Compact modelling in RF CMOS technology

With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years. Today, the standard CMOS technology has become a popular choice for realizing radio frequency (RF) applications. The focus of the thesis is on device compact modelling methodologies in RF CMOS. Compact models oriented to integrated circuit (ICs) computer automatic design (CAD) are the key component of a process design kit (PDK) and the bridge between design houses and foundries. In this work, a novel substrate model is proposed for accurately characterizing the behaviour of RF-MOSFETs with deep n-wells (DNW). A simple test structure is presented to directly access the substrate parasitics from two-port measurements in DNWs. The most important passive device in RFIC design in CMOS is the spiral inductor. A 1-pi model with a novel substrate network is proposed to characterize the broadband loss mechanisms of spiral inductors. Based on the proposed 1-pi model, a physics-originated fully-scalable 2-pi model and model parameter extraction methodology are also presented for spiral inductors in this work. To test and verify the developed active and passive device models and model parameter extraction methods, a series of RF-MOSFETs and planar on-chip spiral inductors with different geometries manufactured by employing standard RF CMOS processes were considered. Excellent agreement between the measured and the simulated results validate the compact models and modelling technologies developed in this work

BiCMOS Millimetre-wave low-noise amplifier

Abstract: Please refer to full text to view abstract.D.Phil. (Electrical and Electronic Engineering

On the VCO/Frequency Divider Interface in Cryogenic CMOS PLL for Quantum Computing Applications

The availability of quantum microprocessors is mandatory, to efficiently run those quantum al-gorithms promising a radical leap forward in computation capability. Silicon-based nanostruc-tured qubits appear today as a very interesting approach, because of their higher information density, longer coherence times, fast operation gates, and compatibility with the actual CMOS technology. In particular, thanks to their phase noise properties, the actual CMOS RFIC Phase-Locked Loops (PLL) and Phase-Locked Oscillators (PLO) are interesting circuits to synthe-size control signals for spintronic qubits. In a quantum microprocessor, these circuits should op-erate close to the qubits, that is, at cryogenic temperatures. The lack of commercial cryogenic Design Kits (DK) may make the interface between the Voltage Controlled Oscillator (VCO) and the Frequency Divider (FD) a serious issue. Nevertheless, currently this issue has not been sys-tematically addressed in the literature. The aim of the present paper is to investigate the VCO/FD interface when the temperature drops from room to cryogenic. To this purpose, physi-cal models of electronics passive/active devices and equivalent circuits of VCO and the FD were developed at room and cryogenic temperatures. The modeling activity has led to design guide-lines for the VCO/FD interface, useful in the absence of cryogenic DKs

Analysis of the high frequency substrate noise effects on LC-VCOs

La integració de transceptors per comunicacions de radiofreqüència en CMOS pot quedar seriosament limitada per la interacció entre els seus blocs, arribant a desaconsellar la utilització de un únic dau de silici. El soroll d’alta freqüència generat per certs blocs, com l’amplificador de potencia, pot viatjar pel substrat i amenaçar el correcte funcionament de l’oscil·lador local. Trobem tres raons importants que mostren aquest risc d’interacció entre blocs i que justifiquen la necessitat d’un estudi profund per minimitzar-lo. Les característiques del substrat fan que el soroll d’alta freqüència es propagui m’és fàcilment que el de baixa freqüència. Per altra banda, les estructures de protecció perden eficiència a mesura que la freqüència augmenta. Finalment, el soroll d’alta freqüència que arriba a l’oscil·lador degrada al seu correcte comportament. El propòsit d’aquesta tesis és analitzar en profunditat la interacció entre el soroll d’alta freqüència que es propaga pel substrat i l’oscil·lador amb l’objectiu de poder predir, mitjançant un model, l’efecte que aquest soroll pot tenir sobre el correcte funcionament de l’oscil·lador. Es volen proporcionar diverses guies i normes a seguir que permeti als dissenyadors augmentar la robustesa dels oscil·ladors al soroll d’alta freqüència que viatja pel substrat. La investigació de l’efecte del soroll de substrat en oscil·ladors s’ha iniciat des d’un punt de vista empíric, per una banda, analitzant la propagació de senyals a través del substrat i avaluant l’eficiència d’estructures per bloquejar aquesta propagació, i per altra, determinant l’efecte d’un to present en el substrat en un oscil·lador. Aquesta investigació ha mostrat que la injecció d’un to d’alta freqüència en el substrat es pot propagar fins arribar a l’oscil·lador i que, a causa del ’pulling’ de freqüència, pot modular en freqüència la sortida de l’oscil·lador. A partir dels resultats de l’anàlisi empíric s’ha aportat un model matemàtic que permet predir l’efecte del soroll en l’oscil·lador. Aquest model té el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem. el principal avantatge en el fet de que està basat en paràmetres físics de l’oscil·lador o del soroll, permetent determinar les mesures que un dissenyador pot prendre per augmentar la robustesa de l’oscil·lador així com les conseqüències que aquestes mesures tenen sobre el seu funcionament global (trade-offs). El model ha estat comparat tant amb simulacions com amb mesures reals demostrant ser molt precís a l’hora de predir l’efecte del soroll de substrat. La utilitat del model com a eina de disseny s’ha demostrat en dos estudis. Primerament, les conclusions del model han estat aplicades en el procés de disseny d’un oscil·lador d’ultra baix consum a 2.5GHz, aconseguint un oscil·lador robust al soroll de substrat d’alta freqüència i amb característiques totalment compatibles amb els principals estàndards de comunicació en aquesta banda. Finalment, el model s’ha utilitzat com a eina d’anàlisi per avaluar la causa de les diferències, en termes de robustesa a soroll de substrat, mesurades en dos oscil·ladors a 60GHz amb dues diferents estratègies d’apantallament de l’inductor del tanc de ressonant, flotant en un cas i connectat a terra en l’altre. El model ha mostrat que les diferències en robustesa són causades per la millora en el factor de qualitat i en l’amplitud d’oscil·lació i no per un augment en l’aïllament entre tanc i substrat. Per altra banda, el model ha demostrat ser vàlid i molt precís inclús en aquest rang de freqüència tan extrem.The integration of transceivers for RF communication in CMOS can be seriously limited by the interaction between their blocks, even advising against using a single silicon die. The high frequency noise generated by some of the blocks, like the power amplifier, can travel through the substrate, reaching the local oscillator and threatening its correct performance. Three important reasons can be stated that show the risk of the single die integration. Noise propagation is easier the higher the frequency. Moreover, the protection structures lose efficiency as the noise frequency increases. Finally, the high frequency noise that reaches the local oscillator degrades its performance. The purpose of this thesis is to deeply analyze the interaction between the high frequency substrate noise and the oscillator with the objective of being able to predict, thanks to a model, the effect that this noise may have over the correct behavior of the oscillator. We want to provide some guidelines to the designers to allow them to increase the robustness of the oscillator to high frequency substrate noise. The investigation of the effect of the high frequency substrate noise on oscillators has started from an empirical point of view, on one hand, analyzing the noise propagation through the substrate and evaluating the efficiency of some structures to block this propagation, and on the other hand, determining the effect on an oscillator of a high frequency noise tone present in the substrate. This investigation has shown that the injection of a high frequency tone in the substrate can reach the oscillator and, due to a frequency pulling effect, it can modulate in frequency the output of the oscillator. Based on the results obtained during the empirical analysis, a mathematical model to predict the effect of the substrate noise on the oscillator has been provided. The main advantage of this model is the fact that it is based on physical parameters of the oscillator and of the noise, allowing to determine the measures that a designer can take to increase the robustness of the oscillator as well as the consequences (trade-offs) that these measures have over its global performance. This model has been compared against both, simulations and real measurements, showing a very high accuracy to predict the effect of the high frequency substrate noise. The usefulness of the presented model as a design tool has been demonstrated in two case studies. Firstly, the conclusions obtained from the model have been applied in the design of an ultra low power consumption 2.5 GHz oscillator robust to the high frequency substrate noise with characteristics which make it compatible with the main communication standards in this frequency band. Finally, the model has been used as an analysis tool to evaluate the cause of the differences, in terms of performance degradation due to substrate noise, measured in two 60 GHz oscillators with two different tank inductor shielding strategies, floating and grounded. The model has determined that the robustness differences are caused by the improvement in the tank quality factor and in the oscillation amplitude and no by an increased isolation between the tank and the substrate. The model has shown to be valid and very accurate even in these extreme frequency range.Postprint (published version

ANALYSIS AND DESIGN OF SILICON-BASED MILLIMETER-WAVE AMPLIFIERS

Ph.DDOCTOR OF PHILOSOPH