On Mitigation of Side-Channel Attacks in 3D ICs: Decorrelating Thermal Patterns from Power and Activity

Various side-channel attacks (SCAs) on ICs have been successfully demonstrated and also mitigated to some degree. In the context of 3D ICs, however, prior art has mainly focused on efficient implementations of classical SCA countermeasures. That is, SCAs tailored for up-and-coming 3D ICs have been overlooked so far. In this paper, we conduct such a novel study and focus on one of the most accessible and critical side channels: thermal leakage of activity and power patterns. We address the thermal leakage in 3D ICs early on during floorplanning, along with tailored extensions for power and thermal management. Our key idea is to carefully exploit the specifics of material and structural properties in 3D ICs, thereby decorrelating the thermal behaviour from underlying power and activity patterns. Most importantly, we discuss powerful SCAs and demonstrate how our open-source tool helps to mitigate them.Comment: Published in Proc. Design Automation Conference, 201

Characterization Of Thermal Stresses And Plasticity In Through-Silicon Via Structures For Three-Dimensional Integration

Through-silicon via (TSV) is a critical element connecting stacked dies in three-dimensional (3D) integration. The mismatch of thermal expansion coefficients between the Cu via and Si can generate significant stresses in the TSV structure to cause reliability problems. In this study, the thermal stress in the TSV structure was measured by the wafer curvature method and its unique stress characteristics were compared to that of a Cu thin film structure. The thermo-mechanical characteristics of the Cu TSV structure were correlated to microstructure evolution during thermal cycling and the local plasticity in Cu in a triaxial stress state. These findings were confirmed by microstructure analysis of the Cu vias and finite element analysis (FEA) of the stress characteristics. In addition, the local plasticity and deformation in and around individual TSVs were measured by synchrotron x-ray microdiffraction to supplement the wafer curvature measurements. The importance and implication of the local plasticity and residual stress on TSV reliabilities are discussed for TSV extrusion and device keep-out zone (KOZ).Microelectronics Research Cente

Stress-Induced Delamination Of Through Silicon Via Structures

Continuous scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently three-dimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution to meet the future interconnect requirement. Thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper examines the effect of thermal stresses on interfacial reliability of TSV structures. First, the three-dimensional distribution of the thermal stress near the TSV and the wafer surface is analyzed. Using a linear superposition method, a semi-analytic solution is developed for a simplified structure consisting of a single TSV embedded in a silicon (Si) wafer. The solution is verified for relatively thick wafers by comparing to numerical results obtained by finite element analysis (FEA). Results from the stress analysis suggest interfacial delamination as a potential failure mechanism for the TSV structure. Analytical solutions for various TSV designs are then obtained for the steady-state energy release rate as an upper bound for the interfacial fracture driving force, while the effect of crack length is evaluated numerically by FEA. Based on these results, the effects of TSV designs and via material properties on the interfacial reliability are elucidated. Finally, potential failure mechanisms for TSV pop-up due to interfacial fracture are discussed.Aerospace Engineerin

Electro-Thermal Codesign in Liquid Cooled 3D ICs: Pushing the Power-Performance Limits

The performance improvement of today's computer systems is usually accompanied by increased chip power consumption and system temperature. Modern CPUs dissipate an average of 70-100W power while spatial and temporal power variations result in hotspots with even higher power density (up to 300W/cm^2). The coming years will continue to witness a significant increase in CPU power dissipation due to advanced multi-core architectures and 3D integration technologies. Nowadays the problems of increased chip power density, leakage power and system temperatures have become major obstacles for further improvement in chip performance. The conventional air cooling based heat sink has been proved to be insufficient for three dimensional integrated circuits (3D-ICs). Hence better cooling solutions are necessary. Micro-fluidic cooling, which integrates micro-channel heat sinks into silicon substrates of the chip and uses liquid flow to remove heat inside the chip, is an effective active cooling scheme for 3D-ICs. While the micro-fluidic cooling provides excellent cooling to 3D-ICs, the associated overhead (cooling power consumed by the pump to inject the coolant through micro-channels) is significant. Moreover, the 3D-IC structure also imposes constraints on micro-channel locations (basically resource conflict with through-silicon-vias TSVs or other structures). In this work, we investigate optimized micro-channel configurations that address the aforementioned considerations. We develop three micro-channel structures (hotspot optimized cooling configuration, bended micro-channel and hybrid cooling network) that can provide sufficient cooling to 3D-IC with minimum cooling power overhead, while at the same time, compatible with the existing electrical structure such as TSVs. These configurations can achieve up to 70% cooling power savings compared with the configuration without any optimization. Based on these configurations, we then develop a micro-fluidic cooling based dynamic thermal management approach that maintains the chip temperature through controlling the fluid flow rate (pressure drop) through micro-channels. These cooling configurations are designed after the electrical parts, and therefore, compatible with the current standard IC design flow. Furthermore, the electrical, thermal, cooling and mechanical aspects of 3D-IC are interdependent. Hence the conventional design flow that designs the cooling configuration after electrical aspect is finished will result in inefficiencies. In order to overcome this problem, we then investigate electrical-thermal co-design methodology for 3D-ICs. Two co-design problems are explored: TSV assignment and micro-channel placement co-design, and gate sizing and fluidic cooling co-design. The experimental results show that the co-design enables a fundamental power-performance improvement over the conventional design flow which separates the electrical and cooling design. For example, the gate sizing and fluidic cooling co-design achieves 12% power savings under the same circuit timing constraint and 16% circuit speedup under the same power budget

TSV placement optimization for liquid cooled 3D-ICs with emerging NVMs

Three dimensional integrated circuits (3D-ICs) are a promising solution to the performance bottleneck in planar integrated circuits. One of the salient features of 3D-ICs is their ability to integrate heterogeneous technologies such as emerging non-volatile memories (NVMs) in a single chip. However, thermal management in 3D-ICs is a significant challenge, owing to the high heat flux (~ 250 W/cm2). Several research groups have focused either on run-time or design-time mechanisms to reduce the heat flux and did not consider 3D-ICs with heterogeneous stacks. The goal of this work is to achieve a balanced thermal gradient in 3D-ICs, while reducing the peak temperatures. In this research, placement algorithms for design-time optimization and choice of appropriate cooling mechanisms for run-time modulation of temperature are proposed. Specifically, an architectural framework which introduce weight-based simulated annealing (WSA) algorithm for thermal-aware placement of through silicon vias (TSVs) with inter-tier liquid cooling is proposed for design-time. In addition, integrating a dedicated stack of emerging NVMs such as RRAM, PCRAM and STTRAM, a run-time simulation framework is developed to analyze the thermal and performance impact of these NVMs in 3D-MPSoCs with inter-tier liquid cooling. Experimental results of WSA algorithm implemented on MCNC91 and GSRC benchmarks demonstrate up to 11 K reduction in the average temperature across the 3D-IC chip. In addition, power density arrangement in WSA improved the uniformity by 5%. Furthermore, simulation results of PARSEC benchmarks with NVM L2 cache demonstrates a temperature reduction of 12.5 K (RRAM) compared to SRAM in 3D-ICs. Especially, RRAM has proved to be thermally efficient replacement for SRAM with 34% lower energy delay product (EDP) and 9.7 K average temperature reduction

Investigation into yield and reliability enhancement of TSV-based three-dimensional integration circuits

Three dimensional integrated circuits (3D ICs) have been acknowledged as a promising technology to overcome the interconnect delay bottleneck brought by continuous CMOS scaling. Recent research shows that through-silicon-vias (TSVs), which act as vertical links between layers, pose yield and reliability challenges for 3D design. This thesis presents three original contributions.The first contribution presents a grouping-based technique to improve the yield of 3D ICs under manufacturing TSV defects, where regular and redundant TSVs are partitioned into groups. In each group, signals can select good TSVs using rerouting multiplexers avoiding defective TSVs. Grouping ratio (regular to redundant TSVs in one group) has an impact on yield and hardware overhead. Mathematical probabilistic models are presented for yield analysis under the influence of independent and clustering defect distributions. Simulation results using MATLAB show that for a given number of TSVs and TSV failure rate, careful selection of grouping ratio results in achieving 100% yield at minimal hardware cost (number of multiplexers and redundant TSVs) in comparison to a design that does not exploit TSV grouping ratios. The second contribution presents an efficient online fault tolerance technique based on redundant TSVs, to detect TSV manufacturing defects and address thermal-induced reliability issue. The proposed technique accounts for both fault detection and recovery in the presence of three TSV defects: voids, delamination between TSV and landing pad, and TSV short-to-substrate. Simulations using HSPICE and ModelSim are carried out to validate fault detection and recovery. Results show that regular and redundant TSVs can be divided into groups to minimise area overhead without affecting the fault tolerance capability of the technique. Synthesis results using 130-nm design library show that 100% repair capability can be achieved with low area overhead (4% for the best case). The last contribution proposes a technique with joint consideration of temperature mitigation and fault tolerance without introducing additional redundant TSVs. This is achieved by reusing spare TSVs that are frequently deployed for improving yield and reliability in 3D ICs. The proposed technique consists of two steps: TSV determination step, which is for achieving optimal partition between regular and spare TSVs into groups; The second step is TSV placement, where temperature mitigation is targeted while optimizing total wirelength and routing difference. Simulation results show that using the proposed technique, 100% repair capability is achieved across all (five) benchmarks with an average temperature reduction of 75.2? (34.1%) (best case is 99.8? (58.5%)), while increasing wirelength by a small amount

Placement for fast and reliable through-silicon-via (TSV) based 3D-IC layouts

The objective of this research is to explore the feasibility of addressing the major performance and reliability problems or issues, such as wirelength, stress-induced carrier mobility variation, temperature, and quality trade-offs, found in three-dimensional integrated circuits (3D ICs) that use through-silicon vias (TSVs) at placement stage. Four main works that support this goal are included. In the first work, wirelength of TSV-based 3D ICs is the main focus. In the second work, stress-induced carrier mobility variation in TSV-based 3D ICs is examined. In the third work, temperature inside TSV-based 3D ICs is investigated. In the final work, the quality trade-offs of TSV-based 3D-IC designs are explored. In the first work, a force-directed, 3D, and gate-level placement algorithm that efficiently handles TSVs is developed. The experiments based on synthesized benchmarks indicate that the developed algorithm helps generate GDSII layouts of 3D-IC designs that are optimized in terms of wirelength. In addition, the impact of TSVs on other physical aspects of 3D-IC designs is also studied by analyzing the GDSII layouts. In the second work, the model for carrier mobility variation caused by TSV and STI stresses is developed as well as the timing analysis flow considering the stresses. The impact of TSV and STI stresses on carrier mobility variation and performance of 3D ICs is studied. Furthermore, a TSV-stress-driven, force-directed, and 3D placement algorithm is developed. It exploits carrier mobility variation, caused by stress around TSVs after fabrication, to improve the timing and area objectives during placement. In addition, the impact of keep-out zone (KOZ) around TSVs on stress, carrier mobility variation, area, wirelength, and performance of 3D ICs is studied. In the third work, two temperature-aware global placement algorithms are developed. They exploit die-to-die thermal coupling in 3D ICs to improve temperature during placement. In addition, a framework used to evaluate the results from temperature-aware global placements is developed. The main component of the framework is a GDSII-level thermal analysis that considers all structures inside a TSV-based 3D IC while computing temperature. The developed placers are compared with several state-of-the-art placers published in recent literature. The experimental results indicate that the developed algorithms help improve the temperature of 3D ICs effectively. In the final work, three block-level design styles for TSV-based die-to-wafer bonded 3D ICs are discussed. Several 3D-IC layouts in the three styles are manually designed. The main difference among these layouts is the position of TSVs. Finally, the area, wirelength, timing, power, temperature, and mechanical stress of all layouts are compared to explore the trade-offs of layout quality.PhDCommittee Chair: Lim, Sung Kyu; Committee Member: Bakir, Muhannad; Committee Member: Kim, Hyesoon; Committee Member: Mukhopadhyay, Saibal; Committee Member: Swaminathan, Madhava

Thermo-Mechanical Effects Of Thermal Cycled Copper Through Silicon Vias

The semiconductor industry is currently facing transistor scaling issues due to fabrication thresholds and quantum effects. In this \u27More-Than-Moore\u27 era, the industry is developing new ways to increase device performance, such as stacking chips for three-dimensional integrated circuits (3D-IC). The 3D-IC\u27s superior performance over their 2D counterparts can be attributed to the use of vertical interconnects, or through silicon vias (TSV). These interconnects are much shorter, reducing signal delay. However TSVs are susceptible to various thermo-mechanical reliability concerns. Heating during fabrication and use, in conjunction with coefficient of thermal expansion mismatch between the copper TSVs and silicon substrate, create harmful stresses in the system. The purpose of this work is to evaluate the signal integrity of Cu-TSVs and determine the major contributing factors of the signal degradation upon in-use conditions. Two series of samples containing blind Cu-TSVs embedded in a Si substrate were studied, each having different types and amounts of voids from manufacturing. The samples were thermally cycled up to 2000 times using three maximum temperatures to simulate three unique in-use conditions. S11 parameter measurements were then conducted to determine the signal integrity of the TSVs. To investigate the internal response from cycling, a protocol was developed for cross-sectioning the copper TSVs. Voids were measured using scanning electron microscope and focused ion beam imaging of the cross-sections, while the microstructural evolution of the copper was monitored with electron backscattering diffraction. An increase in void area was found to occur after cycling. This is thought to be the major contributing factor in the signal degradation of the TSVs, since no microstructural changes were observed in the copper