Communication Reliability in Network on Chip Designs

The performance of low latency Network on Chip (NoC) architectures, which incorporate fast bypass paths to reduce communication latency, is limited by crosstalk induced skewing of signal transitions on link wires. As a result of crosstalk interactions between wires, signal transitions belonging to the same flit or bit vector arrive at the destination at different times and are likely to violate setup and hold time constraints for the design. This thesis proposes a two-step technique: TransSync- RecSync, to dynamically eliminate packet errors resulting from inter-bit-line transition skew. The proposed approach adds minimally to router complexity and involves no wire overhead. The actual throughput of NoC designs with asynchronous bypass designs is evaluated and the benefits of augmenting such schemes with the proposed design are studied. The TransSync, TransSync-2-lines and RecSync schemes described here are found to improve the average communication latency by 26%, 20% and 38% respectively in a 7X7 mesh NoC with asynchronous bypass channel. This work also evaluates the bit-error ratio (BER) performance of several existing crosstalk avoidance and error correcting schemes and compares them to that of the proposed schemes. Both TransSync and RecSync scheme are dynamic in nature and can be switched on and off on-the-fly. The proposed schemes can therefore be employed to impart unequal error protection (UEP) against intra-flit skewing on NoC links. In the UEP, a larger fraction of the energy budget is spent in providing protection to those parts of the data being transmitted on the link which have a higher priority, while expending smaller effort in protecting relatively less important parts of the data. This allows us to achieve the prescribed level of performance with lower levels of power. The benefits of the presented technique are illustrated using an H.264 video decoder system-on-chip (SoC) employing NoC architecture. We show that for Akyio test streams transmitted over 3mm long link wires, the power consumption can be reduced by as much as 20% at the cost of an acceptable degradation in average peak signal to noise ratio (PSNR) with UEP

Design and Test of a Gate Driver with Variable Drive and Self-Test Capability Implemented in a Silicon Carbide CMOS Process

Discrete silicon carbide (SiC) power devices have long demonstrated abilities that outpace those of standard silicon (Si) parts. The improved physical characteristics allow for faster switching, lower on-resistance, and temperature performance. The capabilities unleashed by these devices allow for higher efficiency switch-mode converters as well as the advance of power electronics into new high-temperature regimes previously unimaginable with silicon devices. While SiC power devices have reached a relative level of maturity, recent work has pushed the temperature boundaries of control electronics further with silicon carbide integrated circuits. The primary requirement to ensure rapid switching of power MOSFETs was a gate drive buffer capable of taking a control signal and driving the MOSFET gate with high current required. In this work, the first integrated SiC CMOS gate driver was developed in a 1.2 μm SiC CMOS process to drive a SiC power MOSFET. The driver was designed for close integration inside a power module and exposure to high temperatures. The drive strength of the gate driver was controllable to allow for managing power MOSFET switching speed and potential drain voltage overshoot. Output transistor layouts were optimized using custom Python software in conjunction with existing design tool resources. A wafer-level test system was developed to identify yield issues in the gate driver output transistors. This method allowed for qualitative and quantitative evaluation of transistor leakage while the system was under probe. Wafer-level testing and results are presented. The gate driver was tested under high temperature operation up to 530 degrees celsius. An integrated module was built and tested to illustrate the capability of the gate driver to control a power MOSFET under load. The adjustable drive strength feature was successfully demonstrated

Power Management for Deep Submicron Microprocessors

As VLSI technology scales, the enhanced performance of smaller transistors comes at the expense of increased power consumption. In addition to the dynamic power consumed by the circuits there is a tremendous increase in the leakage power consumption which is further exacerbated by the increasing operating temperatures. The total power consumption of modern processors is distributed between the processor core, memory and interconnects. In this research two novel power management techniques are presented targeting the functional units and the global interconnects. First, since most leakage control schemes for processor functional units are based on circuit level techniques, such schemes inherently lack information about the operational profile of higher-level components of the system. This is a barrier to the pivotal task of predicting standby time. Without this prediction, it is extremely difficult to assess the value of any leakage control scheme. Consequently, a methodology that can predict the standby time is highly beneficial in bridging the gap between the information available at the application level and the circuit implementations. In this work, a novel Dynamic Sleep Signal Generator (DSSG) is presented. It utilizes the usage traces extracted from cycle accurate simulations of benchmark programs to predict the long standby periods associated with the various functional units. The DSSG bases its decisions on the current and previous standby state of the functional units to accurately predict the length of the next standby period. The DSSG presents an alternative to Static Sleep Signal Generation (SSSG) based on static counters that trigger the generation of the sleep signal when the functional units idle for a prespecified number of cycles. The test results of the DSSG are obtained by the use of a modified RISC superscalar processor, implemented by SimpleScalar, the most widely accepted open source vehicle for architectural analysis. In addition, the results are further verified by a Simultaneous Multithreading simulator implemented by SMTSIM. Leakage saving results shows an increase of up to 146% in leakage savings using the DSSG versus the SSSG, with an accuracy of 60-80% for predicting long standby periods. Second, chip designers in their effort to achieve timing closure, have focused on achieving the lowest possible interconnect delay through buffer insertion and routing techniques. This approach, though, taxes the power budget of modern ICs, especially those intended for wireless applications. Also, in order to achieve more functionality, die sizes are constantly increasing. This trend is leading to an increase in the average global interconnect length which, in turn, requires more buffers to achieve timing closure. Unconstrained buffering is bound to adversely affect the overall chip performance, if the power consumption is added as a major performance metric. In fact, the number of global interconnect buffers is expected to reach hundreds of thousands to achieve an appropriate timing closure. To mitigate the impact of the power consumed by the interconnect buffers, a power-efficient multi-pin routing technique is proposed in this research. The problem is based on a graph representation of the routing possibilities, including buffer insertion and identifying the least power path between the interconnect source and set of sinks. The novel multi-pin routing technique is tested by applying it to the ISPD and IBM benchmarks to verify the accuracy, complexity, and solution quality. Results obtained indicate that an average power savings as high as 32% for the 130-nm technology is achieved with no impact on the maximum chip frequency