Stochastic Memory Devices for Security and Computing

With the widespread use of mobile computing and internet of things, secured communication and chip authentication have become extremely important. Hardware-based security concepts generally provide the best performance in terms of a good standard of security, low power consumption, and large-area density. In these concepts, the stochastic properties of nanoscale devices, such as the physical and geometrical variations of the process, are harnessed for true random number generators (TRNGs) and physical unclonable functions (PUFs). Emerging memory devices, such as resistive-switching memory (RRAM), phase-change memory (PCM), and spin-transfer torque magnetic memory (STT-MRAM), rely on a unique combination of physical mechanisms for transport and switching, thus appear to be an ideal source of entropy for TRNGs and PUFs. An overview of stochastic phenomena in memory devices and their use for developing security and computing primitives is provided. First, a broad classification of methods to generate true random numbers via the stochastic properties of nanoscale devices is presented. Then, practical implementations of stochastic TRNGs, such as hardware security and stochastic computing, are shown. Finally, future challenges to stochastic memory development are discussed

Avalanches and the edge-of-chaos in neuromorphic nanowire networks

The brain's efficient information processing is enabled by the interplay between its neuro-synaptic elements and complex network structure. This work reports on the neuromorphic dynamics of nanowire networks (NWNs), a brain-inspired system with synapse-like memristive junctions embedded within a recurrent neural network-like structure. Simulation and experiment elucidate how collective memristive switching gives rise to long-range transport pathways, drastically altering the network's global state via a discontinuous phase transition. The spatio-temporal properties of switching dynamics are found to be consistent with avalanches displaying power-law size and life-time distributions, with exponents obeying the crackling noise relationship, thus satisfying criteria for criticality. Furthermore, NWNs adaptively respond to time varying stimuli, exhibiting diverse dynamics tunable from order to chaos. Dynamical states at the edge-of-chaos are found to optimise information processing for increasingly complex learning tasks. Overall, these results reveal a rich repertoire of emergent, collective dynamics in NWNs which may be harnessed in novel, brain-inspired computing approaches

Mesoscopic Models of Stochastic Transport

Transportphänomene treten in biologischen und künstlichen Systemen auf allen Längenskalen auf. In dieser Arbeit untersuchen wir sie für verschiedene Systeme aus einer mesoskopischen Perspektive, in der Fluktuationen physikalischer Größen um ihre Mittelwerte eine wichtige Rolle spielen. Im ersten Teil untersuchen wir die persistente Bewegung aktiver Brownscher Teilchen mit zusätzlichem Drehmoment, wie sie z.B. für Spermien oder Janus Teilchen auftritt. Wird ihre Bewegung auf einen Tunnel variierender Breite beschränkt, so setzt im thermischen Nichtgleichgewicht Transport ein; ungerichtete Fluktuationen des rauschhaften Antriebs werden gleichgerichtet. Hierdurch wird ein neuer Ratschentyp realisiert. Im zweiten Teil untersuchen wir den intrazellulären Cargotransport in den Axonen von Nervenzellen mithilfe molekularer Motoren. Sie werden als asymmetrischer Ausschlussprozess simuliert. Zusätzlich können die Cargos zwischen benachbarten Motoren ausgetauscht werden. Dadurch lassen sich charakteristische Eigenschaften des langsamen axonalen Transports mit einer einzigen Motorspezies reproduzieren. Bewerkstelligt wird dies durch die transiente Anbindung der Cargos an rückwärtslaufende Motorstaus. Im dritten Teil diskutieren wir resistive switching, die nicht volatile Widerstandsänderung eines Dielektrikums durch elektrische Impulse. Es wird für Anwendungen im Computerspeicher ausgenutzt, dem resistive RAM. Wir schlagen ein auf Sauerstoffvakanzen basierendes stochastisches Gitterhüpfmodell vor. Wir definieren binäre logische Zustände mit Hilfe der zugrunde liegenden Vakanzenverteilung und definieren Schreibe- und Leseoperationen durch Spannungsimpulse für ein solches Speicherelement. Überlegungen über die Unterscheidbarkeit dieser Operationen unter Fluktuationen zusammen mit der Deutlichkeit der unterschiedlichen Widerstandszustände selbst ermöglichen es uns, eine optimale Vakanzenzahl vorherzusagen.Transport phenomena occur in biological and artificial systems at all length scales. In this thesis, we investigate them for various systems from a mesoscopic perspective, in which fluctuations around their average properties play an important role. In the first part, we investigate the persistent diffusive motion of active Brownian particles with an additional torque. It can appear in many real life systems, for example in sperm cells or Janus particles. If their motion is confined to a tunnel of varying width, transport arises out of thermal equilibrium; unbiased fluctuations of the noisy drive are rectified. This way, we have realized a novel kind of ratchet. In the second part, we study intracellular cargo transport in the axons of nerve cells by molecular motors. They are modeled by an asymmetric exclusion process. In a new approach, we add a cargo exchange interaction between the motors. This way, the characteristics of slow axonal transport can be accounted for with a single motor species. It is explained by the transient attachment of cargos to reverse walking motors jams. In the third part, we discuss resistive switching, the non-volatile change of resistance in a dielectric due to electric pulses. It is exploited for applications in computer memory, the resistive random access memory (ReRAM). We propose a stochastic lattice hopping model based on the on oxygen vacancies. We define binary logical states by means of the underlying vacancy distributions, and establish a framework of writing and reading such a memory element with voltage pulses. Considerations about the discriminability of these operations under fluctuations together with the markedness of the resistive switching effect itself enable us to predict an optimal vacancy number