Fabrication of Surface Micromachined AlN Piezoelectric Microstructures and its Potential Apllication to RF Resonators

We report on a novel microfabrication method to fabricate aluminum nitride (AlN) piezoelectric microstructures down to 2 microns size by a surface micromachining process. Highly c-axis oriented AlN thin films are deposited between thin Cr electrodes on polysilicon structural layers by rf reactive sputtering. The top Cr layer is used both as a mask to etch the AlN thin films and as an electrode to actuate the AlN piezoelectric layer. The AlN layer is patterned anisotropically by wet etching using a TMAH (25%) solution. This multilayer stack uses silicon-di-oxide as a sacrificial layer to make free-standing structures. One-port scattering paramenter measurement using a network analyzer show a resonant frequency of 1.781 GHz on a clamped-clamped beam suspended structure. The effective electromechanical coupling factor is calculated as 2.4 % and the measured bandwidth is 13.5 MHz for one such a doubly clamped beam (990x30) μm2

Large-area femtosecond laser milling of silicon employing trench analysis

A femtosecond laser is a powerful tool for micromachining of silicon. In this work, large-area laser ablation of crystalline silicon is comprehensively studied using a laser source of pulse width 300 fs at two wavelengths of 343 nm and 1030 nm. We develop a unique approach to gain insight into the laser milling process by means of detailed analysis of trenches. Laser scribed trenches and milled areas are characterized using optical profilometry to extract dimensional and roughness parameters with accuracy and repeatability. In a first step, multiple measures of the trench including the average depth, the volume of recast material, the average longitudinal profile roughness, the inner trench width and the volume removal rate are studied. This allows for delineation of ablation regimes and associated characteristics allowing to determine the impact of fluence and repetition rate on laser milling. In a second step, additional factors of debris formation and material redeposition that come into play during laser milling are further elucidated. These results are utilized for processing large-area (up to few mm2) with milling depths up to 200 {\mu}m to enable the fabrication of cavities with low surface roughness at high removal rates of up to 6.9 {\mu}m3 {\mu}s-1. Finally, laser processing in combination with XeF2 etching is applied on SOI-CMOS technology in the fabrication of radio-frequency (RF) functions standing on suspended membranes. Performance is considerably improved on different functions like RF switch (23 dB improvement in 2nd harmonic), inductors (near doubling of Q-factor) and LNA (noise figure improvement of 0.1 dB) demonstrating the applicability of milling to radio-frequency applications.Comment: 23 pages, 16 figure

A novel surface micromachining process to fabricate AlN unimorph suspensions and its application for RF resonators

A novel surface micromachining process is reported for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for micro actuator applications. Wet anisotropic etching of AlN thin film is used with a Cr metal mask layer in the microfabrication process. Tetra methyl ammonium hydroxide (TMAH) of 25 wt.% solution is used as an etching solution for the AlN thin films. Polysilicon is used as a structural layer. Highly c-axis oriented AlN thin films are deposited by RF reactive sputtering. Thin layers of chromium on either side of the AlN are used as top and bottom electrodes and also as a mask to etch the AlN and polysilicon layers. The fabricated suspended unimorph structures are tested for scattering parameters using a vector network analyzer. Results show resonant frequencies of devices above 1.7 GHz with an effective electromechanical coupling factor, $K^2_{\mathrm eff} \approx 1.7\%

A micromachined thermo-optical light modulator based on semiconductor-to-metal phase transition

In this research, a micromachined thermo-optical light modulator was realized based on the semiconductor-to-metal phase transition of vanadium dioxide (VO2) thin film. VO2 undergoes a reversible phase transition at approximately 68 0C, which is accompanied with drastic changes in its electrical and optical properties. The sharp electrical resistivity change can be as great as five orders. Optically, VO2 film will switch from a transparent semiconductor phase to a reflective metal phase upon the phase transition. The light modulator in this research exploits this phase transition related optical switching by using surface micromachined low-thermal-mass pixels to achieve good thermal isolations, which ensures that each pixel can be individually switched without cross talking. In operation, the pixel temperature was controlled by integrated resistor on each pixel or spatially addressed thermal radiation sources. Active VO2 thin film was synthesized by thermal oxidation of e-beam evaporated vanadium metal film. The oxidized film exhibits a phase transition at ~65°C with a hysteresis of about 15°C. A transmittance switching from ~90% to ~30% in the near infrared and a reflectance switching from ~50% to 15% in the visible have been achieved. The surface microstructure was studied and correlated to its optical properties. A study on the hysteresis loop reveals that the VO2 can be repetitively switched between the on and off\u27 states. The micromachined thermal isolation pixel was a bridge-like silicon dioxide platform suspended with narrow supporting legs. The pixel design was optimized with both thermal and optical simulations. The VO2 light modulator was fabricated by surface micromachining based on dry processing. Silicon dioxide was deposited on a polyimide sacrificial layer by PECVD and patterned to form the structural pixel. Vanadium film was e-beam evaporated and patterned with lift-off process. It was thermally oxidized into VO2 at 390°C. The thermal isolation pixel was anchored on substrate by aluminum pedestals. Finally, the structure was released in an oxygen plasma barrel asher. The VO2 array was experimentally tested and its light switching and modulation ability were demonstrated. Further study shows that the surface micromachining process has no degrading effect on the optical property of VO2 thin film

MEMS/NEMS based on mono-, nano-, and ultrananocrystalline diamond films

Diamond, because of its unique physical, chemical, and electrical properties and the feasibility of growing it in thin-fi lm form, is an ideal choice as a material for the fabrication of reliable, long endurance, microelectromechanical/nanoelectromechanical systems (MEMS/NEMS). However, various practical challenges, including wafer-scale thickness uniformity, CMOS compatibility, surface micromachining, and, more importantly, controlling the internal stress of the diamond fi lms, make this material more challenging for MEMS engineers. Recent advances in the growth of diamond fi lms using chemical vapor deposition have changed this landscape since most technical hurdles have been overcome, enabling a new era of diamond based MEMS and NEMS development. This article discusses a few examples of MEMS and NEMS devices that have been fabricated using mono-, nano-, and ultrananocrystalline diamond films as well as their performance

Micromachined three-dimensional electrode arrays for in-vitro and in-vivo electrogenic cellular networks

This dissertation presents an investigation of micromachined three-dimensional microelectrode arrays (3-D MEAs) targeted toward in-vitro and in-vivo biomedical applications. Current 3-D MEAs are predominantly silicon-based, fabricated in a planar fashion, and are assembled to achieve a true 3-D form: a technique that cannot be extended to micro-manufacturing. The integrated 3-D MEAs developed in this work are polymer-based and thus offer potential for large-scale, high volume manufacturing. Two different techniques are developed for microfabrication of these MEAs - laser micromachining of a conformally deposited polymer on a non-planar surface to create 3-D molds for metal electrodeposition; and metal transfer micromolding, where functional metal layers are transferred from one polymer to another during the process of micromolding thus eliminating the need for complex and non-repeatable 3-D lithography processes. In-vitro and in-vivo 3-D MEAs are microfabricated using these techniques and are packaged utilizing Printed Circuit Boards (PCB) or other low-cost manufacturing techniques. To demonstrate in-vitro applications, growth of 3-D co-cultures of neurons/astrocytes and tissue-slice electrophysiology with brain tissue of rat pups were implemented. To demonstrate in-vivo application, measurements of nerve conduction were implemented. Microelectrode impedance models, noise models and various process models were evaluated. The results confirmed biocompatibility of the polymers involved, acceptable impedance range and noise of the microelectrodes, and potential to improve upon an archaic clinical diagnostic application utilizing these 3-D MEAs.Ph.D.Committee Chair: Mark G. Allen; Committee Member: Elliot L. Chaikof; Committee Member: Ionnis (John) Papapolymerou; Committee Member: Maysam Ghovanloo; Committee Member: Oliver Bran

Post-CMOS compatible high-throughput fabrication of AIN-based piezoelectric microcantilevers

A post-complementary metal oxide semiconductor (CMOS) compatible microfabrication process of piezoelectric cantilevers has been developed. The fabrication process is suitable for standard silicon technology and provides low-cost and high-throughput manufacturing. This work reports design, fabrication and characterization of piezoelectric cantilevers based on aluminum nitride (AlN) thin films synthesized at room temperature. The proposed microcantilever system is a sandwich structure composed of chromium (Cr) electrodes and a sputtered AlN film. The key issue for cantilever fabrication is the growth at room temperature of the AlN layer by reactive sputtering, making possible the innovative compatibility of piezoelectric MEMS devices with CMOS circuits already processed. AlN and Cr have been etched by inductively coupled plasma (ICP) dry etching using a BCl3–Cl2–Ar plasma chemistry. As part of the novelty of the post-CMOS micromachining process presented here, a silicon Si (1 0 0) wafer has been used as substrate as well as the sacrificial layer used to release the microcantilevers. In order to achieve this, the Si surface underneath the structure has been wet etched using an HNA (hydrofluoric acid + nitric acid + acetic acid) based solution. X-ray diffraction (XRD) characterization indicated the high crystalline quality of the AlN film. An atomic force microscope (AFM) has been used to determine the Cr electrode surface roughness. The morphology of the fabricated devices has been studied by scanning electron microscope (SEM). The cantilevers have been piezoelectrically actuated and their out-of-plane vibration modes were detected by vibrometry

Development of micromachined millimeter-wave modules for next-generation wireless transceiver front-ends

This thesis discusses the design, fabrication, integration and characterization of millimeter wave passive components using polymer-core-conductor surface micromachining technologies. Several antennas, including a W-band broadband micromachined monopole antenna on a lossy glass substrate, and a Ka-band elevated patch antenna, and a V-band micromachined horn antenna, are presented. All antennas have advantages such as a broad operation band and high efficiency. A low-loss broadband coupler and a high-Q cavity for millimeter-wave applications, using surface micromachining technologies is reported using the same technology. Several low-loss all-pole band-pass filters and transmission-zero filters are developed, respectively. Superior simulation and measurement results show that polymer-core-conductor surface micromachining is a powerful technology for the integration of high-performance cavity, coupler and filters. Integration of high performance millimeter-wave transceiver front-end is also presented for the first time. By elevating a cavity-filter-based duplexer and a horn antenna on top of the substrate and using air as the filler, the dielectric loss can be eliminated. A full-duplex transceiver front-end integrated with amplifiers are designed, fabricated, and comprehensively characterized to demonstrate advantages brought by this surface micromachining technology. It is a low loss and substrate-independent solution for millimeter-wave transceiver integration.Ph.D.Committee Chair: John Papapolymerou; Committee Chair: Manos Tentzeris; Committee Member: Gordon Stuber; Committee Member: John Cressler; Committee Member: John Z. Zhang; Committee Member: Joy Laska