mm-Wave Silicon ICs: Challenges and Opportunities

Millimeter-waves offer promising opportunities and interesting challenges to silicon integrated circuit and system designers. These challenges go beyond standard circuit design questions and span a broader range of topics including wave propagation, antenna design, and communication channel capacity limits. It is only meaningful to evaluate the benefits and shortcoming of silicon-based mm-wave integrated circuits in this broader context. This paper reviews some of these issues and presents several solutions to them

A review of technologies and design techniques of millimeter-wave power amplifiers

his article reviews the state-of-the-art millimeter-wave (mm-wave) power amplifiers (PAs), focusing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, gallium arsenide (GaAs), GaN, and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the mm-wave spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of the mm-wave PA design

CMOS Signal Synthesizers for Emerging RF-to-Optical Applications

The need for clean and powerful signal generation is ubiquitous, with applications spanning the spectrum from RF to mm-Wave, to into and beyond the terahertz-gap. RF applications including mobile telephony and microprocessors have effectively harnessed mixed-signal integration in CMOS to realize robust on-chip signal sources calibrated against adverse ambient conditions. Combined with low cost and high yield, the CMOS component of hand-held devices costs a few cents per part per million parts. This low cost, and integrated digital processing, make CMOS an attractive option for applications like high-resolution imaging and ranging, and the emerging 5-G communication space. RADAR techniques when expanded to optical frequencies can enable micrometers of resolution for 3D imaging. These applications, however, impose upto 100x more exacting specifications on power and spectral purity at much higher frequencies than conventional RF synthesizers. This generation of applications will present unconventional challenges for transistor technologies - whether it is to squeeze performance in the conventionally used spectrum, already wrung dry, or signal generation and system design in the relatively emptier mm-Wave to sub-mmWave spectrum, much of the latter falling in the ``Terahertz Gap". Indeed, transistor scaling and innovative device physics leading to new transistor topologies have yielded higher cut-off frequencies in CMOS, though still lagging well behind SiGe and III-V semiconductors. To avoid multimodule solutions with functionality partitioned across different technologies, CMOS must be pushed out of its comfort zone, and technology scaling has to have accompanying breakthroughs in design approaches not only at the system but also at the block level. In this thesis, while not targeting a specific application, we seek to formulate the obstacles in synthesizing high frequency, high power and low noise signals in CMOS and construct a coherent design methodology to address them. Based on this, three novel prototypes to overcome the limiting factors in each case are presented. The first half of this thesis deals with high frequency signal synthesis and power generation in CMOS. Outside the range of frequencies where the transistor has gain, frequency generation necessitates harmonic extraction either as harmonic oscillators or as frequency multipliers. We augment the traditional maximum oscillation frequency metric (fmax), which only accounts for transistor losses, with passive component loss to derive an effective fmax metric. We then present a methodology for building oscillators at this fmax, the Maximum Gain Ring Oscillator. Next, we explore generating large signals beyond fmax through harmonic extraction in multipliers. Applying concepts of waveform shaping, we demonstrate a Power Mixer that engineers transistor nonlinearity by manipulating the amplitudes and relative phase shifts of different device nodes to maximize performance at a specific harmonic beyond device cut-off. The second half proposes a new architecture for an ultra-low noise phase-locked loop (PLL), the Reference-Sampling PLL. In conventional PLLs, a noisy buffer converts the slow, low-noise sine-wave reference signal to a jittery square-wave clock against which the phase of a noisy voltage-controlled oscillator (VCO) is corrected. We eliminate this reference buffer, and measure phase error by sampling the reference sine-wave with the 50x faster VCO waveform already available on chip, and selecting the relevant sample with voltage proportional to phase error. By avoiding the N-squared multiplication of the high-power reference buffer noise, and directly using voltage-mode phase error to control the VCO, we eliminate several noisy components in the controlling loop for ultra-low integrated jitter for a given power consumption. Further, isolation of the VCO tank from any varying load, unlike other contemporary divider-less PLL architectures, results in an architecture with record performance in the low-noise and low-spur space. We conclude with work that brings together concepts developed for clean, high-power signal generation towards a hybrid CMOS-Optical approach to Frequency-Modulated Continuous-Wave (FMCW) Light-Detection-And-Ranging (LIDAR). Cost-effective tunable lasers are temperature-sensitive and have nonlinear tuning profiles, rendering precise frequency modulations or 'chirps' untenable. Locking them to an electronic reference through an electro-optic PLL, and electronically calibrating the control signal for nonlinearity and ambient sensitivity, can make such chirps possible. Approaches that build on the body of advances in electrical PLLs to control the performance, and ease the specification on the design of optical systems are proposed. Eventually, we seek to leverage the twin advantages of silicon-intensive integration and low-cost high-yield towards developing a single-chip solution that uses on-chip signal processing and phased arrays to generate precise and robust chirps for an electronically-steerable fine LIDAR beam

G-band waveguide to microstrip transition for MMIC integration

In recent years, Millimetre-Wave (MMW) frequencies (30-300 GHz) have been exploited for a variety of attractive applications such as astronomical observation, medical imaging, aircraft aided-control landing, security and concealed weapons detection. All this was also possible thanks to the advances in high frequency circuits where Monolithic Microwave Integrated Circuits (MMICs) represent a key factor. Systems working at MMW often use metal waveguides as interconnect elements and transitions are em- ployed to transfer the signals from these elements to the Radio Frequency (RF) circuits. The objective of this thesis is to design, fabricate and characterise electromagnetic transitions between rectangular waveguide (WR) and planar transmission lines at G-band frequencies (140-220 GHz). The first part of this work presents an overview of the electromagnetic properties of the atmosphere at MMW frequencies and their use for passive MMW imaging applications. Fundamental design concepts and prototypes of real-time imagers are also represented, based on the pioneering work carried out at QinetiQ Ltd. An extensive review of the scientific literature on waveguide transitions presents previous designs and architectures. The work proceeds through design, simulation, fabrication and measurements of G-band transitions highlighting advantages and disadvantages of different structures. The novel design of Elevated E-plane probes, used as waveguide to microstrip transitions in this work, extends the fabrication technique of MMIC air-bridges to build suspended metal structures and provides an additional optimising parameter to improve the reflection performance of the transition by decomposing the substrate influence on the metal probe. The innovative Elevated E-plane probe is fabricated on Semi-Insulated Gallium Arsenide (SI-GaAs) and it is MMIC-integrated, reducing system complexity and optimizing fabrication and assembly costs. The core of the thesis details the fabrication processes and procedures and a separate section describes the manufacture of G-band rectangular waveguide blocks that host the transitions. The overall fabrication is carried out using in-house facilities at the University of Glasgow without the aid of external facilities. Measured results are presented and discussed, validating design and simulations. This work has led to a successful design and fabrication of GaAs-integrated rectangular waveg- uide to microstrip line transition at G-band

A 39GHz Balanced Power Amplifier with Enhanced Linearity in 45 nm SOI CMOS

With the high data rate communication systems that come with fifth-generation (5G) mobile networks, the shift of operation to millimeter-wave frequency becomes inevitable. The expected data rate in 5G is significantly improved over 4G by utilizing the large available channel bandwidth at millimeter wave frequencies and complex data modulation schemes. With this increase in operation frequency, many new challenges arise and research efforts are made to tackle them. Among them, the phased array system is one of the hottest topics as it can be made use of to improve the link budget and overcome the path loss challenge at these frequencies. As the last circuit component in the transmitter's front-end right before the antenna, the power amplifier (PA) is one of the most crucial components with significant effects on overall system performance. Many of the traditional challenges of CMOS PA design such as output power and efficiency, are now compounded with the additional challenges that are imposed on complementary metal-oxide semiconductor (CMOS) PAs in millimeter wave phased array systems. This thesis presents a balanced power amplifier design with enhanced linearity in GlobalFoundries' 45nm silicon-on-insulator (SOI) CMOS technology. By using the balanced topology with each stage terminating with a differential 2-stacked architecture, the PA achieves saturated output power of over 21 dBm. Each of the two identical sub-PAs in the balanced topology uses 2-stage topology with driver and PA co-design method. The linearity is enhanced through careful choice of biasing point and a strategic inter-stage matching network design methodology, resulting in amplitude-to-phase distortion below 1 degree up to the output 1dB compression level of over 19 dBm. The balanced amplifier topology significantly reduces the PA performance variation over mismatched load impedance at the output, thus improving the PA performance over different antenna active impedance caused by varying phased array beam-steering angles. In addition to this, the balanced topology also optimizes the PA input and output return loss, giving a better matching than -20 dB at both input and output, and minimizing the risk of potential issues and performance degradation in the system integration phase. Lastly, the compact transformer based matching networks and quadrature hybrids reduce the chip area occupation of this PA, resulting in a compact design with competitive performance

Forward Error Correction in Memoryless Optical Modulation

The unprecedented growth in demand for digital media has led to an all-time high in society’s demand for information. This demand will in all likelihood continue to grow as technology such as 3D television service, on-demand video and peer-to-peer networking continue to become more common place. The large amount of information required is currently transmitted optically using a wavelength division multiplexing (WDM) network structure. The need to increase the capacity of the existing WDM network infrastructure efficiently is essential to continue to provide new high bandwidth services to end-users, while at the same time minimizing network providers’ costs. In WDM systems the key to reducing the cost per transported information bit is to effectively share all optical components. These components must operate within the same wavelength limited window; therefore it is necessary to place the WDM channels as close together as possible. At the same time, the correct modulation format must be selected in order to create flexible, cost-effective, high-capacity optical networks. This thesis presents a detailed comparison of Differential Quadrature Phase Shift Keying (DQPSK) to other modulation formats. This comparison is implemented through a series of simulations in which the bit error rate of various modulation formats are compared both with and without the presence of forward error correction techniques. Based off of these simulation results, the top performing modulation formats are placed into a multiplexed simulation to assess their overall robustness in the face of multiple filtering impairments

Microstrip antenna design with improved fabrication tolerance for remote vital signs monitoring and WLAN/WPAN applications at mm-wave and THz frequencies

A novel approach is introduced to design microstrip patch antennas (MPAs) with improved fabrication tolerance for highly demanded Millimetre-wave (mm-wave) (30-300GHz) and Terahertz (THz) (0.3-3THz) frequency applications. The presented MP A designing method overcomes the challenges which exist with the fabrication and implementation of the conventional MP A designs at mm-wave and THz frequencies. The following research contributions have been added to the state-ofthe- art work: (i) designing of improved size MPAs at 60GHz, 1 OOGHz, 635GHz and 835GHz to prove the designing concept, (ii) detail measurements and analysis of Remote Vital Signs Monitoring (RVSM) with various sizes of the proposed MPA arrays at 60GHz for high detection accuracy and sensitivity, (iii) designing and tes~ing of MP As for 60GHz wireless local and personal area networks (WLAN/WP AN) in point-to-pint, point-to-multipoint and dual-band applications, (iv) implementation and testing of particular Partially Reflective Surface, Dielectric Lens and Defected Ground Structures on the proposed MP A designs with novel configurations at 60GHz for bandwidth and gain enhancement, and (v~ a comprehensive experimental study on the performance of large array designs with the proposed MP A elements for mm-wave applications. The mentioned research work is explained in the coming chapters in details. Moreover, all mentioned work has already been published