RF circulator structures via offset lithography

Further developments are reported of the conductive lithographic film (CLF) process in which components of radio-frequency circulators are fabricated economically via offset lithography. The performance of centre conductor elements printed from silver-loaded inks on polymer substrates is compared with that of conventional solid copper structures

On signalling over through-silicon via (TSV) interconnects in 3-D integrated circuits.

This paper discusses signal integrity (SI) issues and signalling techniques for Through Silicon Via (TSV) interconnects in 3-D Integrated Circuits (ICs). Field-solver extracted parasitics of TSVs have been employed in Spice simulations to investigate the effect of each parasitic component on performance metrics such as delay and crosstalk and identify a reduced-order electrical model that captures all relevant effects. We show that in dense TSV structures voltage-mode (VM) signalling does not lend itself to achieving high data-rates, and that current-mode (CM) signalling is more effective for high throughput signalling as well as jitter reduction. Data rates, energy consumption and coupled noise for the different signalling modes are extracted

Design of the 12-bit Delta-Sigma Modulator using SC Technique for Vibration Sensor Output Processing

The work deals with the design of the 12-bit Delta-Sigma modulator using switched capacitors (SC) technique. The modulator serves to vibration sensor output processing. The first part describes the Delta-Sigma modulator parameters definition. Results of the proposed topology ideal model were presented as well. Next, the Delta-Sigma modulator circuitry on the transistor level was done. The ONSemiconductor I2T100 0.7 um CMOS technology was used for design. Then, the Delta-Sigma modulator nonidealities were simulated and implemented into the MATLAB ideal model of the modulator. The model of real Delta-Sigma modulator was derived. Consequently, modulator coefficients were optimized. Finally, the corner analysis of the Delta-Sigma modulator with the optimized coefficients was simulated. The value of SNDR = 82.2 dB (ENOB = 13.4 bits) was achieved

Generating All Two-MOS-Transistor Amplifiers Leads to New Wide-Band LNAs

This paper presents a methodology that systematically generates all 2-MOS-transistor wide-band amplifiers, assuming that MOSFET is exploited as a voltage-controlled current source. This leads to new circuits. Their gain and noise factor have been compared to well-known wide-band amplifiers. One of the new circuits appears to have a relatively low noise factor, which is also gain independent. Based on this new circuit, a 50-900 MHz variable-gain wide-band LNA has been designed in 0.35-µm CMOS. Measurements show a noise figure between 4.3 and 4.9 dB for gains from 6 to 11 dB. These values are more than 2 dB lower than the noise figure of the wide-band common-gate LNA for the same input matching, power consumption, and voltage gain. IIP2 and IIP3 are better than 23.5 and 14.5 dBm, respectively, while the LNA drains only 1.5 mA at 3.3 V

Extending systems-on-chip to the third dimension : performance, cost and technological tradeoffs.

Because of the today's market demand for high-performance, high-density portable hand-held applications, electronic system design technology has shifted the focus from 2-D planar SoC single-chip solutions to different alternative options as tiled silicon and single-level embedded modules as well as 3-D integration. Among the various choices, finding an optimal solution for system implementation dealt usually with cost, performance and other technological trade-off analysis at the system conceptual level. It has been identified that the decisions made within the first 20% of the total design cycle time will ultimately result up to 80% of the final product cost. In this paper, we discuss appropriate and realistic metric for performance and cost trade-off analysis both at system conceptual level (up-front in the design phase) and at implementation phase for verification in the three-dimensional integration. In order to validate the methodology, two ubiquitous electronic systems are analyzed under various implementation schemes and discuss the pros and cons of each of them