Device modeling of superconductor transition edge sensors based on the two-fluid theory

In order to support the design and study of sophisticated large scale transition edge sensor (TES) circuits, we use basic SPICE elements to develop device models for TESs based on the superfluid-normal fluid theory. In contrast to previous studies, our device model is not limited to small signal simulation, and it relies only on device parameters that have clear physical meaning and can be easily measured. We integrate the device models in design kits based on powerful EDA tools such as CADENCE and OrCAD, and use them for versatile simulations of TES circuits. Comparing our simulation results with published experimental data, we find good agreement which suggests that device models based on the two-fluid theory can be used to predict the behavior of TES circuits reliably and hence they are valuable for assisting the design of sophisticated TES circuits.Comment: 10pages,11figures. Accepted to IEEE Trans. Appl. Supercon

Modeling methodology of high-voltage substrate minority and majority carrier injections

This paper presents a modeling methodology for substrate current coupling mechanisms. An enhanced model of the diode ensuring continuity of minority carriers is used to build an equivalent schematic, accounting for minority and majority carrier propagation in the substrate. For the first time a typical H-bridge structure is simulated with the proposed methodology. The parasitic current injected in the substrate by a high-voltage structure is simulated in a circuit-level simulator as well as with a finite elements method. Both are compared to measurements and show a very good agreement. The simulation resources needed by the proposed equivalent schematics are thus greatly reduced in regard to the finite element approach, offering an efficient tool for substrate modeling in smart power IC's

When self-consistency makes a difference

Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits. The slow thermal dynamics and the thermal nonlinearity should be accurately included in the model; otherwise, some response features subtly related to the detailed frequency behavior of the slow thermal dynamics would be inaccurately reproduced or completely distorted. In this contribution we show two examples, concerning current collapse in HBTs and modeling of IMPs in GaN HEMTs. Accurate thermal modeling is proved to be be made compatible with circuit-oriented CAD tools through a proper choice of system-level approximations; in the discussion we exploit a Wiener approach, but of course the strategy should be tailored to the specific problem under consideratio

Single-Electron Traps: A Quantitative Comparison of Theory and Experiment

We have carried out a coordinated experimental and theoretical study of single-electron traps based on submicron aluminum islands and aluminum oxide tunnel junctions. The results of geometrical modeling using a modified version of MIT's FastCap were used as input data for the general-purpose single-electron circuit simulator MOSES. The analysis indicates reasonable quantitative agreement between theory and experiment for those trap characteristics which are not affected by random offset charges. The observed differences between theory and experiment (ranging from a few to fifty percent) can be readily explained by the uncertainty in the exact geometry of the experimental nanostructures.Comment: 17 pages, 21 figures, RevTex, eps

Equivalent Circuit Modeling of the Dielectric Loaded Microwave Biosensor

This article describes the modeling of biological tissues at microwave frequency using equivalent lumped elements. A microwave biosensor based on microstrip ring resonator (MRR), that has been utilized previously for meat quality evaluation is used for this purpose. For the first time, the ring-resonator loaded with the lossy and high permittivity dielectric material, such as; biological tissue, in a partial overlay configuration is analyzed. The equivalent circuit modeling of the structure is then performed to identify the effect of overlay thickness on the resonance frequency. Finally, the relationship of an overlay thickness with the corresponding RC values of the meat equivalent circuit is established. Simulated, calculated and measured results are then compared for validation. Results are well agreed while the observed discrepancy is in acceptable limit

Nonlinear mechanisms in passive microwave devices

Premi extraordinari doctorat curs 2010-2011, àmbit d’Enginyeria de les TICThe telecommunications industry follows a tendency towards smaller devices, higher power and higher frequency, which imply an increase on the complexity of the electronics involved. Moreover, there is a need for extended capabilities like frequency tunable devices, ultra-low losses or high power handling, which make use of advanced materials for these purposes. In addition, increasingly demanding communication standards and regulations push the limits of the acceptable performance degrading indicators. This is the case of nonlinearities, whose effects, like increased Adjacent Channel Power Ratio (ACPR), harmonics, or intermodulation distortion among others, are being included in the performance requirements, as maximum tolerable levels. In this context, proper modeling of the devices at the design stage is of crucial importance in predicting not only the device performance but also the global system indicators and to make sure that the requirements are fulfilled. In accordance with that, this work proposes the necessary steps for circuit models implementation of different passive microwave devices, from the linear and nonlinear measurements to the simulations to validate them. Bulk acoustic wave resonators and transmission lines made of high temperature superconductors, ferroelectrics or regular metals and dielectrics are the subject of this work. Both phenomenological and physical approaches are considered and circuit models are proposed and compared with measurements. The nonlinear observables, being harmonics, intermodulation distortion, and saturation or detuning, are properly related to the material properties that originate them. The obtained models can be used in circuit simulators to predict the performance of these microwave devices under complex modulated signals, or even be used to predict their performance when integrated into more complex systems. A key step to achieve this goal is an accurate characterization of materials and devices, which is faced by making use of advanced measurement techniques. Therefore, considerations on special measurement setups are being made along this thesis.Award-winningPostprint (published version

Modeling of CMOS devices and circuits on flexible ultrathin chips

The field of flexible electronics is rapidly evolving. The ultrathin chips are being used to address the high-performance requirements of many applications. However, simulation and prediction of changes in response of device/circuit due to bending induced stress remains a challenge as of lack of suitable compact models. This makes circuit designing for bendable electronics a difficult task. This paper presents advances in this direction, through compressive and tensile stress studies on transistors and simple circuits such as inverters with different channel lengths and orientations of transistors on ultrathin chips. Different designs of devices and circuits in a standard CMOS 0.18-μm technology were fabricated in two separated chips. The two fabricated chips were thinned down to 20 μm using standard dicing-before-grinding technique steps followed by post-CMOS processing to obtain sufficient bendability (20-mm bending radius, or 0.05% nominal strain). Electrical characterization was performed by packaging the thinned chip on a flexible substrate. Experimental results show change of carrier mobilities in respective transistors, and switching threshold voltage of the inverters during different bending conditions (maximum percentage change of 2% for compressive and 4% for tensile stress). To simulate these changes, a compact model, which is a combination of mathematical equations and extracted parameters from BSIM4, has been developed in Verilog-A and compiled into Cadence Virtuoso environment. The proposed model predicts the mobility variations and threshold voltage in compressive and tensile bending stress conditions and orientations, and shows an agreement with the experimental measurements (1% for compressive and 0.6% for tensile stress mismatch)