Building Efficient and Reliable Emerging Technology Systems

The semiconductor industry has been reaping the benefits of Moore’s law powered by Dennard’s voltage scaling for the past fifty years. However, with the end of Dennard scaling, silicon chip manufacturers are facing a widespread plateau in performance improvements. While the architecture community has focused its effort on exploring parallelism, such as with multi-core, many-core and accelerator-based systems, chip manufacturers have been forced to explore beyond-Moore technologies to improve performance while maintaining power density. Examples of such technologies include monolithic 3D integration, carbon nanotube transistors, tunneling-based transistors, spintronics and quantum computing. However, the infancy of the manufacturing process of these new technologies impedes their usage in commercial products. The goal of this dissertation is to combine both architectural and device-level efforts to provide solutions across the computing stack that can overcome the reliability concerns of emerging technologies. This allows for beyond-Moore systems to compete with highly optimized silicon-based processors, thus, enabling faster commercialization of such systems. This dissertation proposes the following key steps: (i) Multifaceted understanding and modeling of variation and yield issues that occur in emerging technologies, such as carbon nanotube transistors (CNFETs). (ii) Design of systems using suitable logic families such as pass transistor logic that provide high performance. (iii) Design of a multi-granular fault-tolerant reconfigurable architecture that enhances yield and performance. (iv) Design of a multi-technology, multi-accelerator heterogeneous system (v) Development of real-time constrained efficient workload scheduling mechanism for heterogeneous systems. This dissertation first presents the use of pass transistor logic family as an alternate to the CMOS logic family for CNFETs to improve performance. It explores various architectural design choices for CNFETs using pass transistor logic (PTL) to create an energy-efficient RISC-V processor. Our results show that while a CNFET RISC-V processor using CMOS logic achieves a 2.9x energy-delay product (EDP) improvement over a silicon design, using PTL along the critical path components of the processor can boost EDP improvement by 5x as well as reduce area by 17% over 16 nm silicon CMOS. This document further builds on providing fault-tolerant and yield enhancing solutions for emerging 3D integration compatible technologies in the context of CNFETs. The proposed framework can efficiently support high-variation technologies by providing protection against manufacturing defects at multiple granularities: module and pipeline-stage levels. Based on the variation observed in a synthesized design, a reliable CNFET-based 3D multi-granular reconfigurable architecture, 3DTUBE, is presented to overcome the manufacturing difficulties. For 0.4-0.7 V, 3DTUBE provides up to 6.0x higher throughput and 3.1x lower EDP compared to a silicon-based multi-core design evaluated at 1 part per billion transistor failure rate, which is 10,000x lower in comparison to CNFET’s failure rate. This dissertation then ventures into building multi-accelerator heterogeneous systems and real-time schedulers that cater to the requirements of the applications while taking advantage of the underlying heterogeneous system. We introduce optimizations like task pruning, hierarchical hetero-ranking and rank update built upon two scheduler policies (MS-static and MS-dynamic), that result in a performance improvement of 3.5x (average) for real-world autonomous vehicle applications, when compared against state-of-the-art schedulers. Adopting insights from the above work, this thesis presents a multi-accelerator, multi-technology heterogeneous system powered by a multi-constrained scheduler that optimizes for varying task requirements to achieve up to 6.1x better energy over a baseline silicon-based system.PHDElectrical and Computer EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/169699/1/aporvaa_1.pd

Robust Circuit & Architecture Design in the Nanoscale Regime

Silicon based integrated circuit (IC) technology is approaching its physical limits. For sub 10nm technology nodes, the carbon nanotube (CNT) based field effect transistor has emerged as a promising device because of its excellent electronic properties. One of the major challenges faced by the CNT technology is the unwanted growth of metallic tubes. At present, there is no known CNT fabrication technology which allows the fabrication of 100% semiconducting CNTs. The presence of metallic tubes creates a short between the drain and source terminals of the transistor and has a detrimental impact on the delay, static power and yield of CNT based gates. This thesis will address the challenge of designing robust carbon nanotube based circuits in the presence of metallic tubes. For a small percentage of metallic tubes, circuit level solutions are proposed to increase the functional yield of CNT based gates in the presence of metallic tubes. Accurate analytical models with less than a 3% inaccuracy rate are developed to estimate the yield of CNT based circuit for a different percentage of metallic tubes and different drive strengths of logic gates. Moreover, a design methodology is developed for yield-aware carbon nanotube based circuits in the presence of metallic tubes using different CNFET transistor configurations. Architecture based on regular logic bricks with underlying hybrid CNFET configurations are developed which gives better trade-offs in terms of performance, power, and functional yield. In the case when the percentage of metallic tubes is large, the proposed circuit level techniques are not sufficient. Extra processing techniques must be applied to remove the metallic tubes. The tube removal techniques have trade-offs, as the removal process is not perfect and removes semiconducting tubes in addition to removing unwanted metallic tubes. As a result, stochastic removal of tubes from the drive and fanout gate(s) results in large variation in the performance of CNFET based gates and in the worst case open circuit gates. A Monte Carlo simulation engine is developed to estimate the impact of the removal of tubes on the performance and power of CNFET based logic gates. For a quick estimation of functional yield of logic gates, accurate analytical models are developed to estimate the functional yield of logic gates when a fraction of the tubes are removed. An efficient tube level redundancy (TLR) is proposed, resulting in a high functional yield of carbon nanotube based circuits with minimal overheads in terms of area and power when large fraction of tubes are removed. Furthermore, for applications where parallelism can be utilized we propose to increase the functional yield of the CNFET based circuits by increasing the logic depth of gates

Theoretical Engineering and Satellite Comlink of a PTVD-SHAM System

This paper focuses on super helical memory system's design, 'Engineering, Architectural and Satellite Communications' as a theoretical approach of an invention-model to 'store time-data'. The current release entails three concepts: 1- an in-depth theoretical physics engineering of the chip including its, 2- architectural concept based on VLSI methods, and 3- the time-data versus data-time algorithm. The 'Parallel Time Varying & Data Super-helical Access Memory' (PTVD-SHAM), possesses a waterfall effect in its architecture dealing with the process of voltage output-switch into diverse logic and quantum states described as 'Boolean logic & image-logic', respectively. Quantum dot computational methods are explained by utilizing coiled carbon nanotubes (CCNTs) and CNT field effect transistors (CNFETs) in the chip's architecture. Quantum confinement, categorized quantum well substrate, and B-field flux involvements are discussed in theory. Multi-access of coherent sequences of 'qubit addressing' in any magnitude, gained as pre-defined, here e.g., the 'big O notation' asymptotically confined into singularity while possessing a magnitude of 'infinity' for the orientation of array displacement. Gaussian curvature of k(k<0) is debated in aim of specifying the 2D electron gas characteristics, data storage system for defining short and long time cycles for different CCNT diameters where space-time continuum is folded by chance for the particle. Precise pre/post data timing for, e.g., seismic waves before earthquake mantle-reach event occurrence, including time varying self-clocking devices in diverse geographic locations for radar systems is illustrated in the Subsections of the paper. The theoretical fabrication process, electromigration between chip's components is discussed as well.Comment: 50 pages, 10 figures (3 multi-figures), 2 tables. v.1: 1 postulate entailing hypothetical ideas, design and model on future technological advances of PTVD-SHAM. The results of the previous paper [arXiv:0707.1151v6], are extended in order to prove some introductory conjectures in theoretical engineering advanced to architectural analysi

Enhanced Metal Contacts to Carbon Nanotube Networks through Chemical and Physical Modification

Carbon nanotubes (CNTs) are an emerging class of nano-structured carbon materials which are currently being studied for applications which would benefit from their desirable electrical and mechanical properties. Potential benefits such as improved current density, flexure tolerance, weight savings, and even radiation tolerance have led to their implementation into numerous devices and structures, many of which are slated for use in space environments. The role of CNTs can be quite diverse, with varied CNT electronic-types and morphologies dictated by the specific application. Despite numerous CNT types and morphologies employed by these technologies, a common link between nearly all of these devices and structures is metal contact to CNTs, where the metal components often provide the link between the carbon nanotubes and the external system. In this work, a variety of CNT-metal systems were characterized in terms of metal morphology analysis and CNT-metal electrical and mechanical interactions, in response to chemical and structural modifications. A large portion of the work additionally focuses on ion irradiation environments. A diverse number of experiments related to CNT-metal interactions will be discussed. For instance, electrochemical interactions between ion-irradiated single-wall CNTs (SWCNTs) and metal salt solutions were utilized to selectively deposit Au nanoparticles (Au-NPs) onto the SWCNTs. A direct correlation was established between defect density and Au-NP areal density, resulting in a method for rapid spatial profiling of ion-irradiation induced defects in SWCNTs. The effect of ion irradiation on the CNT-metal interface was also investigated and it was found that the contact resistance of Ag-SWCNT structures increases, while the specific contact resistance decreases. The increase in overall contact resistance was attributed to increased series resistance in the system due to damage of the bulk SWCNT films, while the decrease in specific contact resistance was attributed to Ag atoms being forward-scattered into the top 5 nm of SWCNT film, as revealed by computational simulations. Additionally, development of Ag-CNT metal matrix composite (MMC) thin films for advanced space solar cell electrodes is discussed. SWCNTs and multi-walled CNTs (MWCNTs) were utilized as reinforcement material in Ag electrodes to address problems related to micro-cracks causing electrode fracture and loss of power in solar cells. A method for creating free standing films was developed to enable mechanical property characterization of the MMCs, and it was found that SWCNTs significantly increase the toughness of Ag thin films, due to the SWCNT tensile strength and strain capabilities. CNT-MMC grid-finger structures were also fabricated by solar cell process-compatible techniques and subjected to electrical testing under mechanical stress. The results showed that CNTs are capable of spanning gaps in Ag electrodes upon fracture, both electrically and mechanically

Carbon nanotube networks for thin film electronic applications

Scope of the thesis -- The advent of flexible organic macroelectronics -- Current challenges -- Carbon nanotubes : powering up orgnaics with nanotechnology -- Objectives of the present work -- Outline the thesis -- Overview of carbon nanotube networks -- Fabrication of carbon nanotube networks -- Electrical properties of carbon nanotube networks -- Applications of carbon nanotube networks -- Experimental procedures -- Carbon nanotubes and their purification -- Separation and suspension of carbon nanotubes in solutions -- Optical spectroscopy -- Protocols for fabricating carbon nanotube networks -- Imaging of carbon nanotube networks -- Atomic force microscopy (AFM) imaging -- Electrical contacts to carbon nanotubes -- Patterning carbon nanotube networks -- Deposition of organic semiconductors -- Electrical characterization -- Evaluating the performance limits of conducting and semicondcuting carbon nanotube networks for thin-film applications -- The fabrication and scaling characteristics of aligned and random carbon nanotube network thin film transistors -- Self-assembly of carbon nanotube networks -- Electrical properties of carbon nanotube network thin film transistors -- Substrate vs. environment- What suppresses electron conduction in field-effect transistor? -- Carbon nanotube sheets as electrodes in organic light emitting diodes -- Carbon nanotubes as injection electrodes in organic thin film transistor

Technological Solution beyond MOSFET and Binary Logic Device

Title from PDF of title page viewed January 31, 2019Thesis advisor: Masud ChowdhuryVitaIncludes bibliographical references (pages 64-70)Thesis (M.S.)--School of Computing and Engineering, University of Missouri--Kansas City, 2018Today’s technology is based on the binary number system-based circuitry, which is the outcome of the simple on and off switching mechanism of the prevailing transistors. Consideration of higher radix number system can eradicate or lessen many limitations of binary number system such as the saturation of Moore’s law. The most substantial potential benefits of higher radix approaches are the decrease of wiring complexity. Excessive scaling of the technologies has led the researchers beyond Binary Logic and MOSFET technology. TFET considered as one of the most promising options for low-power application for beyond MOSFET technologies. Graphene Nano Ribbon, due to its high-carrier mobility, tunable bandgap and its outstanding electrostatic control of device gate becomes ideal choice for channel material of TFET. This paper proposes double gated ultra-thin body (UTB) TFET device model using Graphene nano ribbon as the channel material. In this paper evaluation of the model by performing the comparative analysis with InAs as the channel material in terms of Ec-Ev on and off state and Id-Vg characteristics is presented. The feasibility of multi valued logic system in real-world rests on two serious aspects, such as, the easiness of mathematical approach for implementing the multivalued logic into today’s technology and the sufficiency of synthesis techniques. In this paper, we have focused on the different technology available for implementing multivalued logic especially ternary logic. Ternary logic devices are expected to lead to an exponential increase of the information handling capability, which binary logic cannot support. Memory capacitor or memcapacitor is an emerging device that exhibits hysteresis behavior, which can be manipulated by external parameters, such as, the applied electric field or voltage. One of the unique properties of the memcapacitor is that by using the percolation approach, we can achieve Metal-Insulator-Transition (MIT) phenomenon, which can be utilized to obtain a staggered hysteresis loop. For multivalued logic devices staggered hysteresis behavior is the critical requirement. In this paper, we propose a new conceptual design of a ternary logic device by vertically stacking dielectric material interleaved with layers of graphene nanoribbon (GNR) between two external metal plates. The proposed device structure displays the memcapacitive behavior with the fast switching metal-to-insulator transition in picosecond scale. The device model is later extended into a vertical-cascaded version, which acts as a ternary device.Introduction -- Multi valued logic -- Overview of different MVL technologies -- Graphene memcapacitor based ternary logic device -- Graphene nano ribbon based TFET -- Conclusion and future wor

Multiple-Independent-Gate Field-Effect Transistors for High Computational Density and Low Power Consumption

Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. With all these innovations and efforts, the transistor size is approaching the natural limitations of materials in the near future. The circuits are expected to compute in a more efficient way. From this perspective, new device concepts are desirable to exploit additional functionality. On the other hand, with the continuously increased device density on the chips, reducing the power consumption has become a key concern in IC design. To overcome the limitations of Complementary Metal-Oxide-Semiconductor (CMOS) technology in computing efficiency and power reduction, this thesis introduces the multiple- independent-gate Field-Effect Transistors (FETs) with silicon nanowires and FinFET structures. The device not only has the capability of polarity control, but also provides dual-threshold- voltage and steep-subthreshold-slope operations for power reduction in circuit design. By independently modulating the Schottky junctions between metallic source/drain and semiconductor channel, the dual-threshold-voltage characteristics with controllable polarity are achieved in a single device. This property is demonstrated in both experiments and simulations. Thanks to the compact implementation of logic functions, circuit-level benchmarking shows promising performance with a configurable dual-threshold-voltage physical design, which is suitable for low-power applications. This thesis also experimentally demonstrates the steep-subthreshold-slope operation in the multiple-independent-gate FETs. Based on a positive feedback induced by weak impact ionization, the measured characteristics of the device achieve a steep subthreshold slope of 6 mV/dec over 5 decades of current. High Ion/Ioff ratio and low leakage current are also simultaneously obtained with a good reliability. Based on a physical analysis of the device operation, feasible improvements are suggested to further enhance the performance. A physics-based surface potential and drain current model is also derived for the polarity-controllable Silicon Nanowire FETs (SiNWFETs). By solving the carrier transport at Schottky junctions and in the channel, the core model captures the operation with independent gate control. It can serve as the core framework for developing a complete compact model by integrating advanced physical effects. To summarize, multiple-independent-gate SiNWFETs and FinFETs are extensively studied in terms of fabrication, modeling, and simulation. The proposed device concept expands the family of polarity-controllable FETs. In addition to the enhanced logic functionality, the polarity-controllable SiNWFETs and FinFETs with the dual-threshold-voltage and steep-subthreshold-slope operation can be promising candidates for future IC design towards low-power applications

Novel High Performance Ultra Low Power Static Random Access Memories (SRAMs) Based on Next Generation Technologies

Title from PDF of title page viewed January 27, 2021Dissertation advisor: Masud H. ChowdhuryVitaIncludes bibliographical references (page 107-120)Thesis (Ph.D.)--School of Computing and Engineering. University of Missouri--Kansas City, 2019Next Big Thing Is Surely Small: Nanotechnology Can Bring Revolution. Nanotechnology leads the world towards many new applications in various fields of computing, communication, defense, entertainment, medical, renewable energy and environment. These nanotechnology applications require an energy-efficient memory system to compute and process. Among all the memories, Static Random Access Memories (SRAMs) are high performance memories and occupies more than 50% of any design area. Therefore, it is critical to design high performance and energy-efficient SRAM design. Ultra low power and high speed applications require a new generation memory capable of operating at low power as well as low execution time. In this thesis, a novel 8T SRAM design is proposed that offers significantly faster access time and lowers energy consumption along with better read stability and write ability. The proposed design can be used in the conventional SRAM as well as in computationally intensive applications like neural networks and machine learning classifiers [1]-[4]. Novel 8T SRAM design offers higher energy efficiency, reliability, robustness and performance compared to the standard 6T and other existing 8T and 9T designs. It offers the advantages of a 10T SRAM without the additional area, delay and power overheads of the 10T SRAM. The proposed 8T SRAM would be able to overcome many other limitations of the conventional 6T and other 7T, 8T and 9T designs. The design employs single bitline for the write operation, therefore the number of write drivers are reduced. The defining feature of the proposed 8T SRAM is its hybrid design, which is the combination of two techniques: (i) the utilization of single-ended bitline and (ii) the utilization of virtual ground. The single-ended bitline technique ensures separate read and write operations, which eventually reduces the delay and power consumption during the read and write operations. It's independent read and write paths allow the use of the minimum sized access transistors and aid in a disturb-free read operation. The virtual ground weakens the positive feedback in the SRAM cell and improves its write ability. The virtual ground technique is also used to reduce leakages. The proposed design does not require precharging the bitlines for the read operation, which reduces the area and power overheads of the memory system by eliminating the precharging circuit. The design isolates the storage node from the read path, which improves the read stability. For reliability study, we have investigated the static noise margin (SNM) of the proposed 8T SRAM, for which, we have used two methods – (i) the traditional SNM method with the butterfly curve, (ii) the N-curve method A comparative analysis is performed between the proposed and the existing SRAM designs in terms of area, total power consumption during the read and write operations, and stability and reliability. All these advantages make the proposed 8T SRAM design an ideal candidate for the conventional and computationally intensive applications like machine learning classifier and deep learning neural network. In addition to this, there is need for next generation technologies to design SRAM memory because the conventional CMOS technology is approaching its physical and performance boundaries and as a consequence, becoming incompatible with ultra-low-power applications. Emerging devices such as Tunnel Field Effect Transistor (TFET)) and Graphene Nanoribbon Field Effect Transistor (GNRFET) devices are highly potential candidates to overcome the limitations of MOSFET because of their ability to achieve subthreshold slopes below 60 mV/decade and very low leakage currents [6]-[9]. This research also explores novel TFET and GNRFET based 6T SRAM. The thesis evaluates the standby leakage power in the Tunnel FET (TFET) based 6T SRAM cell for different pull-up, pull-down, and pass-gate transistors ratios (PU: PD: PG) and compared to 10nm FinFET based 6T SRAM designs. It is observed that the 10nm TFET based SRAMs have 107.57%, 163.64%, and 140.44% less standby leakage power compared to the 10nm FinFET based SRAMs when the PU: PD: PG ratios are 1:1:1, 1:5:2 and 2:5:2, respectively. The thesis also presents an analysis of the stability and reliability of sub-10nm TFET based 6T SRAM circuit with a reduced supply voltage of 500mV. The static noise margin (SNM), which is a critical measure of SRAM stability and reliability, is determined for hold, read and write operations of the 6T TFET SRAM cell. The robustness of the optimized TFET based 6T SRAM circuit is also evaluated at different supply voltages. Simulations were done in HSPICE and Cadence tools. From the analysis, it is clear that the main advantage of the TFET based SRAM would be the significant improvement in terms of leakage or standby power consumption. Compared to the FinFET based SRAM the standby leakage power of the T-SRAMs are 107.57%, 163.64%, and 140.44% less for 1:1:1, 1:5:2 and 2:5:2 configurations, respectively. Since leakage/standby power is the primary source of power consumption in the SRAM, and the overall system energy efficiency depends on SRAM power consumption, TFET based SRAM would lead to massive improvement of the energy efficiency of the system. Therefore, T-SRAMs are more suitable for ultra-low power applications. In addition to this, the thesis evaluates the standby leakage power of types of Graphene Nanoribbon FETs based 6T SRAM bitcell and compared to 10nm FinFET based 6T SRAM bitcell. It is observed that the 10nm MOS type GNRFET based SRAMs have 16.43 times less standby leakage power compared to the 10nm FinFET based SRAMs. The double gate SB-GNRFET based SRAM consumes 1.35E+03 times less energy compared to the 10nm FinFET based SRAM during write. However, during read double gate SB-GNRFET based SRAM consume 15 times more energy than FinFET based SRAM. It is also observed that GNRFET based SRAMs are more stable and reliable than FinFET based SRAM.Introduction -- Background -- Novel High Performance Ultra Low Power SRAM Design -- Tunnel FET Based SRAM Design -- Graphene Nanoribbon FET Based SRAM Design -- Double-gate FDSOI Based SRAM Designs -- Novel CNTFET and MEMRISTOR Based Digital Designs -- Conclusio