Stress-dependent local oxidation of silicon

The two-dimensional isolation oxidation of silicon is considered for stress-dependent reaction and diffusion coefficients. The influence of such parameters is investigated numerically and asymptotically in the bird's beak problem and for curved geometries arising in the oxidation of cylindrical and spherical structures. In the bird's beak problem, the limit of large activation volume is described for a stress-dependent reaction coefficient, illustrating the significant growth retardation of the silicon/silicon oxide interface and reduced stresses in the silicon oxide. Novel high-order nonlinear evolution-type PDEs are derived and investigated using asymptotic and numerical techniques

OXIDATION OF SILICON - THE VLSI GATE DIELECTRIC

Silicon dominates the semiconductor industry for good reasons. One factor is the stable, easily formed, insulating oxide, which aids high performance and allows practical processing. How well can these virtues survive as new demands are made on integrity, on smallness of feature sizes and other dimensions, and on constraints on processing and manufacturing methods? These demands make it critical to identify, quantify and predict the key controlling growth and defect processes on an atomic scale.The combination of theory and novel experiments (isotope methods, electronic noise, spin resonance, pulsed laser atom probes and other desorption methods, and especially scanning tunnelling or atomic force microscopies) provide tools whose impact on models is just being appreciated. We discuss the current unified model for silicon oxidation, which goes beyond the traditional descriptions of kinetic and ellipsometric data by explicitly addressing the issues raised in isotope experiments. The framework is still the Deal-Grove model, which provides a phenomenology to describe the major regimes of behaviour, and gives a base from which the substantial deviations can be characterized. In this model, growth is limited by diffusion and interfacial reactions operating in series. The deviations from Deal-Grove are most significant for just those first tens of atomic layers of oxide which are critical for the ultra-thin oxide layers now demanded. Several features emerge as important. First is the role of stress and stress relaxation. Second is the nature of the oxide closest to the Si, both its defects and its differences from the amorphous stoichiometric oxide further out, whether in composition, in network topology, or otherwise. Thirdly, we must consider the charge states of both fixed and mobile species. In thin films with very different dielectric constants, image terms can be important; these terms affect interpretation of spectroscopies, the injection of oxidant species and relative defect stabilities. This has added importance now that P-b concentrations have been correlated with interfacial stress. This raises further issues about the perfection of the oxide random network and the incorporation of interstitial species like molecular oxygen.Finally, the roles of contamination, particles, metals, hydrocarbons etc are important, as is interface roughness. These features depend on pre-gate oxide cleaning and define the Si surface that is to be oxidized which may have an influence on the features listed above

Strongly inhomogeneous distribution of spectral properties of silicon-vacancy color centers in nanodiamonds

The silicon-vacancy (SiV) color center in diamond is a solid-state single photon emitter and spin quantum bit suited as a component in quantum devices. Here, we show that the SiV center in nanodiamond exhibits a strongly inhomogeneous distribution with regard to the center wavelengths and linewidths of the zero-phonon-line (ZPL) emission at room temperature. We find that the SiV centers separate in two clusters: one group exhibits ZPLs with center wavelengths within a narrow range of approximatly 730 nm to 742 nm and broad linewidths between 5 nm and 17 nm, whereas the second group comprises a very broad distribution of center wavelengths between 715 nm and 835 nm, but narrow linewidths from below 1 nm up to 4 nm. Supported by ab initio Kohn-Sham density functional theory calculations we show that the ZPL shifts of the first group are consistently explained by strain in the diamond lattice. Further, we suggest, that the second group showing the strongly inhomogeneous distribution of center wavelengths might be comprised of modified SiV centers. Whereas single photon emission is demonstrated for SiV centers of both clusters, we show that emitters from different clusters show different spectroscopic features such as variations of the phonon sideband spectra and different blinking dynamics

Process techniques study of integrated circuits Interim scientific report, May 1968 - Feb. 1969

Oxide defects and shear stress effects in integrated circuit

A micromachined flow shear-stress sensor based on thermal transfer principles

Microhot-film shear-stress sensors have been developed by using surface micromachining techniques. The sensor consists of a suspended silicon-nitride diaphragm located on top of a vacuum-sealed cavity. A heating and heat-sensing element, made of polycrystalline silicon material, resides on top of the diaphragm. The underlying vacuum cavity greatly reduces conductive heat loss to the substrate and therefore increases the sensitivity of the sensor. Testing of the sensor has been conducted in a wind tunnel under three operation modes-constant current, constant voltage, and constant temperature. Under the constant-temperature mode, a typical shear-stress sensor exhibits a time constant of 72 μs

Selective Response of Mesoporous Silicon to Adsorbants with Nitro Groups

We demonstrate that the electronic structure of mesoporous silicon is affected by adsorption of nitro-based explosive molecules in a compound-selective manner. This selective response is demonstrated by probing the adsorption of two nitro-based molecular explosives (trinitrotoluene and cyclotrimethylenetrinitramine) and a nonexplosive nitro-based arematic molecule (nitrotoluene) on mesoporous silicon using soft X-ray spec- troscopy. The Si atoms strongly interact with adsorbed molecules to form Si-O and Si-N bonds, as evident from the large shifts in emission energy present in the Si L2,3 X-ray emission spectroscopy (XES) measurements. Furthermore, we find that the energy gap of mesoporous silicon changes depending on the adsorbant, as estimated from the Si L2,3 XES and 2p X-ray absorption spectroscopy (XAS) measurements. Our ab initio molecular dynamics calculations of model compounds suggest that these changes are due to spontaneous breaking of the nitro groups upon contacting surface Si atoms. This compound-selective change in electronic structure may provide a powerful tool for the detection and identification of trace quantities of airborne explosive molecules.Comment: 27 pages, 9 figure

Stress Monitoring of Post-processed MEMS Silicon Microbridge Structures Using Raman Spectroscopy

Inherent residual stresses during material deposition can have profound effects on the functionality and reliability of fabricated Micro-Electro-Mechanical Systems (MEMS) devices. Residual stress often causes device failure due to curling, buckling, or fracture. Typically, the material properties of thin films used in surface micromachining are not well controlled during deposition. The residual stress; for example, tends to vary significantly for different deposition methods. Currently, few nondestructive techniques are available to measure residual stress in MEMS devices prior to the final release etch. In this research, micro-Raman spectroscopy is used to measure the residual stresses in polysilicon MEMS microbridge devices. This measurement technique was selected since it is nondestructive, fast, and provides the potential for in-situ stress monitoring. Raman spectroscopy residual stress profiles on unreleased and released MEMS microbridge beams are compared to analytical and FEM models to assess the viability of micro-Raman spectroscopy as an in-situ stress measurement technique. Raman spectroscopy was used during post-processing phosphorus ion implants on unreleased MEMS devices to investigate and monitor residual stress levels at key points during the post-processing sequences. As observed through Raman stress profiles and verified using on-chip test structures, the post-processing implants and accompanying anneals resulted in residual stress relaxation of over 90%

Pascalammetry with operando microbattery probes: Sensing high stress in solid-state batteries.

Energy storage science calls for techniques to elucidate ion transport over a range of conditions and scales. We introduce a new technique, pascalammetry, in which stress is applied to a solid-state electrochemical device and induced faradaic current transients are measured and analyzed. Stress-step pascalammetry measurements are performed on operando microbattery probes (Li2O/Li/W) and Si cathodes, revealing stress-assisted Li+ diffusion. We show how non-Cottrellian lithium diffusional kinetics indicates stress, a prelude to battery degradation. An analytical solution to a diffusion/activation equation describes this stress signature, with spatiotemporal characteristics distinct from Cottrell's classic solution for unstressed systems. These findings create an unprecedented opportunity for quantitative detection of stress in solid-state batteries through the current signature. Generally, pascalammetry offers a powerful new approach to study stress-related phenomena in any solid-state electrochemical system