Nasics: A `Fabric-Centric\u27 Approach Towards Integrated Nanosystems

This dissertation addresses the fundamental problem of how to build computing systems for the nanoscale. With CMOS reaching fundamental limits, emerging nanomaterials such as semiconductor nanowires, carbon nanotubes, graphene etc. have been proposed as promising alternatives. However, nanoelectronics research has largely focused on a `device-first\u27 mindset without adequately addressing system-level capabilities, challenges for integration and scalable assembly. In this dissertation, we propose to develop an integrated nano-fabric, (broadly defined as nanostructures/devices in conjunction with paradigms for assembly, inter-connection and circuit styles), as opposed to approaches that focus on MOSFET replacement devices as the ultimate goal. In the `fabric-centric\u27 mindset, design choices at individual levels are made compatible with the fabric as a whole and minimize challenges for nanomanufacturing while achieving system-level benefits vs. scaled CMOS. We present semiconductor nanowire based nano-fabrics incorporating these fabric-centric principles called NASICs and N3ASICs and discuss how we have taken them from initial design to experimental prototype. Manufacturing challenges are mitigated through careful design choices at multiple levels of abstraction. Regular fabrics with limited customization mitigate overlay alignment requirements. Cross-nanowire FET devices and interconnect are assembled together as part of the uniform regular fabric without the need for arbitrary fine-grain interconnection at the nanoscale, routing or device sizing. Unconventional circuit styles are devised that are compatible with regular fabric layouts and eliminate the requirement for using complementary devices. Core fabric concepts are introduced and validated. Detailed analyses on device-circuit co-design and optimization, cascading, noise and parameter variation are presented. Benchmarking of nanowire processor designs vs. equivalent scaled 16nm CMOS shows up to 22X area, 30X power benefits at comparable performance, and with overlay precision that is achievable with present-day technology. Building on the extensive manufacturing-friendly fabric framework, we present recent experimental efforts and key milestones that have been attained towards realizing a proof-of-concept prototype at dimensions of 30nm and below

Threat Analysis, Countermeaures and Design Strategies for Secure Computation in Nanometer CMOS Regime

Advancements in CMOS technologies have led to an era of Internet Of Things (IOT), where the devices have the ability to communicate with each other apart from their computational power. As more and more sensitive data is processed by embedded devices, the trend towards lightweight and efficient cryptographic primitives has gained significant momentum. Achieving a perfect security in silicon is extremely difficult, as the traditional cryptographic implementations are vulnerable to various active and passive attacks. There is also a threat in the form of hardware Trojans inserted into the supply chain by the untrusted third-party manufacturers for economic incentives. Apart from the threats in various forms, some of the embedded security applications such as random number generators (RNGs) suffer from the impacts of process variations and noise in nanometer CMOS. Despite their disadvantages, the random and unique nature of process variations can be exploited for generating unique identifiers and can be of tremendous use in embedded security. In this dissertation, we explore techniques for precise fault-injection in cryptographic hardware based on voltage/temperature manipulation and hardware Trojan insertion. We demonstrate the effectiveness of these techniques by mounting fault attacks on state-of-the-art ciphers. Physically Unclonable Functions (PUFs) are novel cryptographic primitives for extracting secret keys from complex manufacturing variations in integrated circuits (ICs). We explore the vulnerabilities of some of the popular strong PUF architectures to modeling attacks using Machine Learning (ML) algorithms. The attacks use silicon data from a test chip manufactured in IBM 32nm silicon-on-insulator (SOI) technology. Attack results demonstrate that the majority of strong PUF architectures can be predicted to very high accuracies using limited training data. We also explore the techniques to exploit unreliable data from strong PUF architectures and effectively use them to improve the prediction accuracies of modeling attacks. Motivated by the vulnerabilities of existing PUF architectures, we present a novel modeling attack resistant PUF architecture based on non-linear computing elements. Post-silicon validation results are used to demonstrate the effectiveness of the non-linear PUF architecture against modeling and fault-injection attacks. Apart from the techniques to improve the security of PUF circuits, we also present novel solutions to improve the performance of PUF circuits from the perspectives of IC fabrication and system/protocol design. Finally, we present a statistical benchmark suite to evaluate PUFs in conceptualization phase and also to enable fine-grained security assessments for varying PUF parameters. Data compressibility analyses for validating the statistical benchmark suite are also presented

AI/ML Algorithms and Applications in VLSI Design and Technology

An evident challenge ahead for the integrated circuit (IC) industry in the nanometer regime is the investigation and development of methods that can reduce the design complexity ensuing from growing process variations and curtail the turnaround time of chip manufacturing. Conventional methodologies employed for such tasks are largely manual; thus, time-consuming and resource-intensive. In contrast, the unique learning strategies of artificial intelligence (AI) provide numerous exciting automated approaches for handling complex and data-intensive tasks in very-large-scale integration (VLSI) design and testing. Employing AI and machine learning (ML) algorithms in VLSI design and manufacturing reduces the time and effort for understanding and processing the data within and across different abstraction levels via automated learning algorithms. It, in turn, improves the IC yield and reduces the manufacturing turnaround time. This paper thoroughly reviews the AI/ML automated approaches introduced in the past towards VLSI design and manufacturing. Moreover, we discuss the scope of AI/ML applications in the future at various abstraction levels to revolutionize the field of VLSI design, aiming for high-speed, highly intelligent, and efficient implementations

Statistical Modeling with the Virtual Source MOSFET Model

A statistical extension of the ultra-compact Virtual Source (VS) MOSFET model is developed here for the first time. The characterization uses a statistical extraction technique based on the backward propagation of variance (BPV) with variability parameters derived directly from the nominal VS model. The resulting statistical VS model is extensively validated using Monte Carlo simulations, and the statistical distributions of several figures of merit for logic and memory cells are compared with those of a BSIM model from a 40-nm CMOS industrial design kit. The comparisons show almost identical distributions with distinct run time advantages for the statistical VS model. Additional simulations show that the statistical VS model accurately captures non-Gaussian features that are important for low-power designs.Masdar Institute of Science and Technolog