Statistical Mixed Allocation of Body-Biased Circuits for Reduced Leakage Variation

Abstract-Leakage current is susceptible to variation of transistor parameters and environment such as temperature, which results in wide spread in leakage distribution. The spread can be reduced by employing body biasing: reverse body bias for too leaky dies and forward body bias for too slow dies. We investigate body biasing of mixed circuits. It is shown that the conventional body biasing has limitation in reducing leakage variation of mixed circuits. This is because low-and highdevices do not track each other and their body biasing sensitivities are different. We present alternative body biasing scheme that targets compensating die-to-die variation of low . Under this body biasing scheme, within-die profiles of low-and high-, which we need for statistical allocation of mixed , get wider thus become different from the original ones. We present an analytical procedure to derive new within-die profiles. Experiments with 45-nm predictive model show that the spread in leakage distribution (ratio of maximum and minimum leakage) can be reduced to 4.5 as opposed to 9.4 from conventional body biasing on mixed circuits

Enhancing Power Efficient Design Techniques in Deep Submicron Era

Excessive power dissipation has been one of the major bottlenecks for design and manufacture in the past couple of decades. Power efficient design has become more and more challenging when technology scales down to the deep submicron era that features the dominance of leakage, the manufacture variation, the on-chip temperature variation and higher reliability requirements, among others. Most of the computer aided design (CAD) tools and algorithms currently used in industry were developed in the pre deep submicron era and did not consider the new features explicitly and adequately. Recent research advances in deep submicron design, such as the mechanisms of leakage, the source and characterization of manufacture variation, the cause and models of on-chip temperature variation, provide us the opportunity to incorporate these important issues in power efficient design. We explore this opportunity in this dissertation by demonstrating that significant power reduction can be achieved with only minor modification to the existing CAD tools and algorithms. First, we consider peak current, which has become critical for circuit's reliability in deep submicron design. Traditional low power design techniques focus on the reduction of average power. We propose to reduce peak current while keeping the overhead on average power as small as possible. Second, dual Vt technique and gate sizing have been used simultaneously for leakage savings. However, this approach becomes less effective in deep submicron design. We propose to use the newly developed process-induced mechanical stress to enhance its performance. Finally, in deep submicron design, the impact of on-chip temperature variation on leakage and performance becomes more and more significant. We propose a temperature-aware dual Vt approach to alleviate hot spots and achieve further leakage reduction. We also consider this leakage-temperature dependency in the dynamic voltage scaling approach and discover that a commonly accepted result is incorrect for the current technology. We conduct extensive experiments with popular design benchmarks, using the latest industry CAD tools and design libraries. The results show that our proposed enhancements are promising in power saving and are practical to solve the low power design challenges in deep submicron era

Low-power switched capacitor voltage reference

Low-power analog design represents a developing technological trend as it emerges from a rather limited range of applications to a much wider arena affecting mainstream market segments. It especially affects portable electronics with respect to battery life, performance, and physical size. Meanwhile, low-power analog design enables technologies such as sensor networks and RFID. Research opportunities abound to exploit the potential of low power analog design, apply low-power to established fields, and explore new applications. The goal of this effort is to design a low-power reference circuit that delivers an accurate reference with very minimal power consumption. The circuit and device level low-power design techniques are suitable for a wide range of applications. To meet this goal, switched capacitor bandgap architecture was chosen. It is the most suitable for developing a systematic, and groundup, low-power design approach. In addition, the low-power analog cell library developed would facilitate building a more complex low-power system. A low-power switched capacitor bandgap was designed, fabricated, and fully tested. The bandgap generates a stable 0.6-V reference voltage, in both the discrete-time and continuous-time domain. The system was thoroughly tested and individual building blocks were characterized. The reference voltage is temperature stable, with less than a 100 ppm/°C drift, over a --60 dB power supply rejection, and below a 1 [Mu]A total supply current (excluding optional track-and-hold). Besides using it as a voltage reference, potential applications are also described using derivatives of this switched capacitor bandgap, specifically supply supervisory and on-chip thermal regulation

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

MANAGING AND LEVERAGING VARIATIONS AND NOISE IN NANOMETER CMOS

Advanced CMOS technologies have enabled high density designs at the cost of complex fabrication process. Variation in oxide thickness and Random Dopant Fluctuation (RDF) lead to variation in transistor threshold voltage Vth. Current photo-lithography process used for printing decreasing critical dimensions result in variation in transistor channel length and width. A related challenge in nanometer CMOS is that of on-chip random noise. With decreasing threshold voltage and operating voltage; and increasing operating temperature, CMOS devices are more sensitive to random on-chip noise in advanced technologies. In this thesis, we explore novel circuit techniques to manage the impact of process variation in nanometer CMOS technologies. We also analyze the impact of on-chip noise on CMOS circuits and propose techniques to leverage or manage impact of noise based on the application. True Random Number Generator (TRNG) is an interesting cryptographic primitive that leverages on-chip noise to generate random bits; however, it is highly sensitive to process variation. We explore novel metastability circuits to alleviate the impact of variations and at the same time leverage on-chip noise sources like Random Thermal Noise and Random Telegraph Noise (RTN) to generate high quality random bits. We develop stochastic models for metastability based TRNG circuits to analyze the impact of variation and noise. The stochastic models are used to analyze and compare low power, energy efficient and lightweight post-processing techniques targeted to low power applications like System on Chip (SoC) and RFID. We also propose variation aware circuit calibration techniques to increase reliability. We extended this technique to a more generic application of designing Post-Si Tunable (PST) clock buffers to increase parametric yield in the presence of process variation. Apart from one time variation due to fabrication process, transistors undergo constant change in threshold voltage due to aging/wear-out effects and RTN. Process variation affects conventional sensors and introduces inaccuracies during measurement. We present a lightweight wear-out sensor that is tolerant to process variation and provides a fine grained wear-out sensing. A similar circuit is designed to sense fluctuation in transistor threshold voltage due to RTN. Although thermal noise and RTN are leveraged in applications like TRNG, they affect the stability of sensitive circuits like Static Random Access Memory (SRAM). We analyze the impact of on-chip noise on Bit Error Rate (BER) and post-Si test coverage of SRAM cells

Low Power Decoding Circuits for Ultra Portable Devices

A wide spread of existing and emerging battery driven wireless devices do not necessarily demand high data rates. Rather, ultra low power, portability and low cost are the most desired characteristics. Examples of such applications are wireless sensor networks (WSN), body area networks (BAN), and a variety of medical implants and health-care aids. Being small, cheap and low power for the individual transceiver nodes, let those to be used in abundance in remote places, where access for maintenance or recharging the battery is limited. In such scenarios, the lifetime of the battery, in most cases, determines the lifetime of the individual nodes. Therefore, energy consumption has to be so low that the nodes remain operational for an extended period of time, even up to a few years. It is known that using error correcting codes (ECC) in a wireless link can potentially help to reduce the transmit power considerably. However, the power consumption of the coding-decoding hardware itself is critical in an ultra low power transceiver node. Power and silicon area overhead of coding-decoding circuitry needs to be kept at a minimum in the total energy and cost budget of the transceiver node. In this thesis, low power approaches in decoding circuits in the framework of the mentioned applications and use cases are investigated. The presented work is based on the 65nm CMOS technology and is structured in four parts as follows: In the first part, goals and objectives, background theory and fundamentals of the presented work is introduced. Also, the ECC block in coordination with its surrounding environment, a low power receiver chain, is presented. Designing and implementing an ultra low power and low cost wireless transceiver node introduces challenges that requires special considerations at various levels of abstraction. Similarly, a competitive solution often occurs after a conclusive design space exploration. The proposed decoder circuits in the following parts are designed to be embedded in the low power receiver chain, that is introduced in the first part. Second part, explores analog decoding method and its capabilities to be embedded in a compact and low power transceiver node. Analog decod- ing method has been theoretically introduced over a decade ago that followed with early proof of concept circuits that promised it to be a feasible low power solution. Still, with the increased popularity of low power sensor networks, it has not been clear how an analog decoding approach performs in terms of power, silicon area, data rate and integrity of calculations in recent technologies and for low data rates. Ultra low power budget, small size requirement and more relaxed demands on data rates suggests a decoding circuit with limited complexity. Therefore, the four-state (7,5) codes are considered for hardware implementation. Simulations to chose the critical design factors are presented. Consequently, to evaluate critical specifications of the decoding circuit, three versions of analog decoding circuit with different transistor dimensions fabricated. The measurements results reveal different trade-off possibilities as well as the potentials and limitations of the analog decoding approach for the target applications. Measurements seem to be crucial, since the available computer-aided design (CAD) tools provide limited assistance and precision, given the amount of calculations and parameters that has to be included in the simulations. The largest analog decoding core (AD1) takes 0.104mm2 on silicon and the other two (AD2 and AD3) take 0.035mm2 and 0.015mm2, respectively. Consequently, coding gain in trade-off with silicon area and throughput is presented. The analog decoders operate with 0.8V supply. The achieved coding gain is 2.3 dB at bit error rates (BER)=0.001 and 10 pico-Joules per bit (pJ/b) energy efficiency is reached at 2 Mbps. Third part of this thesis, proposes an alternative low power digital decoding approach for the same codes. The desired compact and low power goal has been pursued by designing an equivalent digital decoding circuit that is fabricated in 65nm CMOS technology and operates in low voltage (near-threshold) region. The architecture of the design is optimized in system and circuit levels to propose a competitive digital alternative. Similarly, critical specifications of the decoder in terms of power, area, data rate (speed) and integrity are reported according to the measurements. The digital implementation with 0.11mm2 area, consumes minimum energy at 0.32V supply which gives 9 pJ/b energy efficiency at 125 kb/s and 2.9 dB coding gain at BER=0.001. The forth and last part, compares the proposed design alternatives based on the fabricated chips and the results attained from the measurements to conclude the most suitable solution for the considered target applications. Advantages and disadvantages of both approaches are discussed. Possible extensions of this work is introduced as future work

Design of Negative Bias Temperature Instability (NBTI) Tolerant Register File

Degradation of transistor parameter values due to Negative Bias Temperature Instability (NBTI) has emerged as a major reliability problem in current and future technology generations. NBTI Aging of a Static Random Access Memory (SRAM) cell leads to a lower noise margin, thereby increasing the failure rate. The register file, which consists of an array of SRAM cells, can suffer from data loss, leading to a system failure. In this work, we study the source of NBTI stress in an architecture and physical register file. Based on our study, we modified the register file structure to reduce the NBTI degradation and improve the overall system reliability. Having evaluated new register file structures, we find that our techniques substantially improve reliability of the register files. The new register files have small overhead, while in some cases they provide saving in area and power

A novel deep submicron bulk planar sizing strategy for low energy subthreshold standard cell libraries

Engineering andPhysical Science ResearchCouncil (EPSRC) and Arm Ltd for providing funding in the form of grants and studentshipsThis work investigates bulk planar deep submicron semiconductor physics in an attempt to improve standard cell libraries aimed at operation in the subthreshold regime and in Ultra Wide Dynamic Voltage Scaling schemes. The current state of research in the field is examined, with particular emphasis on how subthreshold physical effects degrade robustness, variability and performance. How prevalent these physical effects are in a commercial 65nm library is then investigated by extensive modeling of a BSIM4.5 compact model. Three distinct sizing strategies emerge, cells of each strategy are laid out and post-layout parasitically extracted models simulated to determine the advantages/disadvantages of each. Full custom ring oscillators are designed and manufactured. Measured results reveal a close correlation with the simulated results, with frequency improvements of up to 2.75X/2.43X obs erved for RVT/LVT devices respectively. The experiment provides the first silicon evidence of the improvement capability of the Inverse Narrow Width Effect over a wide supply voltage range, as well as a mechanism of additional temperature stability in the subthreshold regime. A novel sizing strategy is proposed and pursued to determine whether it is able to produce a superior complex circuit design using a commercial digital synthesis flow. Two 128 bit AES cores are synthesized from the novel sizing strategy and compared against a third AES core synthesized from a state-of-the-art subthreshold standard cell library used by ARM. Results show improvements in energy-per-cycle of up to 27.3% and frequency improvements of up to 10.25X. The novel subthreshold sizing strategy proves superior over a temperature range of 0 °C to 85 °C with a nominal (20 °C) improvement in energy-per-cycle of 24% and frequency improvement of 8.65X. A comparison to prior art is then performed. Valid cases are presented where the proposed sizing strategy would be a candidate to produce superior subthreshold circuits

Automatic Tuning of Digital Circuits.

Variation in transistors is increasing as process technology transistor dimensions shrink. Compounded with lowering supply voltage, this increased variation presents new challenges for the circuit designer. However, this variation also brings many new opportunities for the circuit designer to leverage as well. We present a time-to-digital converter embedded inside a 64-bit processor core, for direct monitoring of on-chip critical paths. This path monitoring allows the processor to monitor process variation and run-time variations. By adjusting to both static and dynamic operating conditions the impact of variations can be reduced. The time-to-digital converter achieves high-resolution measurement in the picosecond range, due to self-calibration via a self-feedback mode. This system is implemented in 45nm silicon and measured silicon results are shown. We also examine techniques for enhanced variation-tolerance in subthreshold digital circuits, applying these to a high fan-in, self-timed transition detection circuit that, due to its self-timing, is able to fully compensate for the large variation in subthreshold. In addition to mitigating variations we also leverage them for random number generation. We demonstrate that the randomness inherent in the oxide breakdown process can be extracted and applied for the specific applications of on-chip ID generation and on-chip true random number generation. By using dynamic automated self-calibrating algorithms that tune and control the on-chip circuitry, we are able to achieve extremely high-quality results. The two systems are implemented in 65 nm silicon. Measured results for the on-chip ID system, called OxID, show a high-degree of randomness and read-stability in the generated IDs, both primary prerequisites of a high-quality on-chip ID system. Measured results for the true random number generator, called OxiGen, show an exceptionally high degree of randomness, passing all fifteen NIST 800-22 tests for randomness with statistical significance and without the aid of a post-processor.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/86390/1/rachliu_1.pd

Low Power Low Modulation Index Ask Demodulator Design for RFID Applications

In the era of the Internet of Things (IoT) there is a tremendous increase in portable wireless devices utilized in our day to day working. One such example is the Radio Frequency Identification tag. The primary challenge in designing passive RFID tags is reliable functionality over extreme temperature and environmental conditions with low power operation. An important component of the RFID tag architecture is the demodulator which is tasked with interpreting the incoming data and extracting the reference clock for the Phase Locked Loop. A novel ASK demodulator architecture that functions across a temperature range of -25? to 125? is designed, analyzed and optimized for the worst and best case semiconductor process variations. The incoming RF frequency is selected as 900MHz based on the EPC GEN2 protocol and the baseband signal is set at 450 KHz with a modulation index of 5%. MOS transistor operation and variability in semiconductor processes is explored and a better understanding of how these concepts effect and shape our design decisions is established. A design objective is setup and steps to achieve these design objectives are presented. The design of the ASK demodulator is completed with the help of the Cadence Virtuoso tool, utilizing the IBM 0.18µm (CMOS 7RF) process. In order to test our design we have used the Monte Carlo analysis and all the significant DC parameters of the design have been tested for 10,000 samples owing to the high variability associated with modern semiconductor processes. On the other hand Monte Carlo simulations for the transient simulations have been done for 30 samples in accordance with the Central Limit Theorem. The results of the design are compared with other ASK RFID demodulator designs in the past and a comparison is made by utilizing a Figure of Merit from literature. The design is among the best ASK demodulator designs found in literature. Throughout this effort there is emphasis on MOS transistor operation and variations in semiconductor processes. The design takes all pertinent challenges such as extreme temperature, environment conditions and the reliability of the design. Through this work an attempt is made to try and simplify the work of the reader and expose them to the challenges associated with ASK demodulator design.Electrical Engineerin