SIRENA: A CAD environment for behavioural modelling and simulation of VLSI cellular neural network chips

This paper presents SIRENA, a CAD environment for the simulation and modelling of mixed-signal VLSI parallel processing chips based on cellular neural networks. SIRENA includes capabilities for: (a) the description of nominal and non-ideal operation of CNN analogue circuitry at the behavioural level; (b) performing realistic simulations of the transient evolution of physical CNNs including deviations due to second-order effects of the hardware; and, (c) evaluating sensitivity figures, and realize noise and Monte Carlo simulations in the time domain. These capabilities portray SIRENA as better suited for CNN chip development than algorithmic simulation packages (such as OpenSimulator, Sesame) or conventional neural networks simulators (RCS, GENESIS, SFINX), which are not oriented to the evaluation of hardware non-idealities. As compared to conventional electrical simulators (such as HSPICE or ELDO-FAS), SIRENA provides easier modelling of the hardware parasitics, a significant reduction in computation time, and similar accuracy levels. Consequently, iteration during the design procedure becomes possible, supporting decision making regarding design strategies and dimensioning. SIRENA has been developed using object-oriented programming techniques in C, and currently runs under the UNIX operating system and X-Windows framework. It employs a dedicated high-level hardware description language: DECEL, fitted to the description of non-idealities arising in CNN hardware. This language has been developed aiming generality, in the sense of making no restrictions on the network models that can be implemented. SIRENA is highly modular and composed of independent tools. This simplifies future expansions and improvements.Comisión Interministerial de Ciencia y Tecnología TIC96-1392-C02-0

Product assurance technology for custom LSI/VLSI electronics

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification

Grid infrastructures for the electronics domain: requirements and early prototypes from an EPSRC pilot project

The fundamental challenges facing future electronics design is to address the decreasing – atomistic - scale of transistor devices and to understand and predict the impact and statistical variability these have on design of circuits and systems. The EPSRC pilot project “Meeting the Design Challenges of nanoCMOS Electronics” (nanoCMOS) which began in October 2006 has been funded to explore this space. This paper outlines the key requirements that need to be addressed for Grid technology to support the various research strands in this domain, and shows early prototypes demonstrating how these requirements are being addressed

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Intrinsic parameter fluctuations introduced by discreteness of charge and matter will play an increasingly important role when semiconductor devices are scaled to decananometer and nanometer dimensions in next-generation integrated circuits and systems. In this paper, we review the analytical and the numerical simulation techniques used to study and predict such intrinsic parameters fluctuations. We consider random discrete dopants, trapped charges, atomic-scale interface roughness, and line edge roughness as sources of intrinsic parameter fluctuations. The presented theoretical approach based on Green's functions is restricted to the case of random discrete charges. The numerical simulation approaches based on the drift diffusion approximation with density gradient quantum corrections covers all of the listed sources of fluctuations. The results show that the intrinsic fluctuations in conventional MOSFETs, and later in double gate architectures, will reach levels that will affect the yield and the functionality of the next generation analog and digital circuits unless appropriate changes to the design are made. The future challenges that have to be addressed in order to improve the accuracy and the predictive power of the intrinsic fluctuation simulations are also discussed

Equalization-Based Digital Background Calibration Technique for Pipelined ADCs

In this paper, we present a digital background calibration technique for pipelined analog-to-digital converters (ADCs). In this scheme, the capacitor mismatch, residue gain error, and amplifier nonlinearity are measured and then corrected in digital domain. It is based on the error estimation with nonprecision calibration signals in foreground mode, and an adaptive linear prediction structure is used to convert the foreground scheme to the background one. The proposed foreground technique utilizes the LMS algorithm to estimate the error coefficients without needing high-accuracy calibration signals. Several simulation results in the context of a 12-b 100-MS/s pipelined ADC are provided to verify the usefulness of the proposed calibration technique. Circuit-level simulation results show that the ADC achieves 28-dB signal-to-noise and distortion ratio and 41-dB spurious-free dynamic range improvement, respectively, compared with the noncalibrated ADC

Current-Mode Techniques for the Implementation of Continuous- and Discrete-Time Cellular Neural Networks

This paper presents a unified, comprehensive approach to the design of continuous-time (CT) and discrete-time (DT) cellular neural networks (CNN) using CMOS current-mode analog techniques. The net input signals are currents instead of voltages as presented in previous approaches, thus avoiding the need for current-to-voltage dedicated interfaces in image processing tasks with photosensor devices. Outputs may be either currents or voltages. Cell design relies on exploitation of current mirror properties for the efficient implementation of both linear and nonlinear analog operators. These cells are simpler and easier to design than those found in previously reported CT and DT-CNN devices. Basic design issues are covered, together with discussions on the influence of nonidealities and advanced circuit design issues as well as design for manufacturability considerations associated with statistical analysis. Three prototypes have been designed for l.6-pm n-well CMOS technologies. One is discrete-time and can be reconfigured via local logic for noise removal, feature extraction (borders and edges), shadow detection, hole filling, and connected component detection (CCD) on a rectangular grid with unity neighborhood radius. The other two prototypes are continuous-time and fixed template: one for CCD and other for noise removal. Experimental results are given illustrating performance of these prototypes