Spintronics: Fundamentals and applications

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.Comment: invited review, 36 figures, 900+ references; minor stylistic changes from the published versio

Zero field spin polarization in a 2D paramagnetic resonant tunneling diode

We study I-V characteristics of an all-II-VI semiconductor resonant tunneling diode with dilute magnetic impurities in the quantum well layer. Bound magnetic polaron states form in the vicinity of potential fluctuations at the well interface while tunneling electrons traverse these interface quantum dots. The resulting microscopic magnetic order lifts the degeneracy of the resonant tunneling states. Although there is no macroscopic magnetization, the resulting resonant tunneling current is highly spin polarized at zero magnetic field due to the zero field splitting. Detailed modeling demonstrates that the local spin polarization efficiency exceeds 90% without an external magnetic field.Comment: 7 pages, 10 figures (including supplementary information

Shot noise in ferromagnetic single electron tunneling devices

Frequency dependent current noise in ferromagnetic double junctions with Coulomb blockade is studied theoretically in the limit of sequential tunneling. Two different relaxation processes are found in the correlations between spin polarized tunneling currents; low frequency spin fluctuations and high frequency charge fluctuations. Spin accumulation in strongly asymmetric junctions is shown to lead to a negative differential resistance. We also show that large spin noise activated in the range of negative differential resistance gives rise to a significant enhancement of the current noise.Comment: 8 pages, 13 eps-figures include

Spintronic transport and Kondo effect in quantum dots

We investigate the spin-dependent transport properties of quantum-dot based structures where Kondo correlations dominate the electronic dynamics. The coupling to ferromagnetic leads with parallel magnetizations is known to give rise to nontrivial effects in the local density of states of a single quantum dot. We show that this influence strongly depends on whether charge fluctuations are present or absent in the dot. This result is confirmed with numerical renormalization group calculations and perturbation theory in the on-site interaction. In the Fermi-liquid fixed point, we determine the correlations of the electric current at zero temperature (shot noise) and demonstrate that the Fano factor is suppressed below the Poissonian limit for the symmetric point of the Anderson Hamiltonian even for nonzero lead magnetizations. We discuss possible avenues of future research in this field: coupling to the low energy excitations of the ferromagnets (magnons), extension to double quantum dot systems with interdot antiferromagnetic interaction and effect of spin-polarized currents on higher symmetry Kondo states such as SU(4).Comment: 11 pages, 5 figures. Proceedings of the 3rd Intl. Conf. on Physics and Applications of Spin-Related Phenomena in Semiconductors, Santa Barbara, 200

Spin Diode Behavior in Transport Through Single-Molecule Magnets

We study transport properties of a single-molecule magnet (SMM) weakly coupled to one nonmagnetic and one ferromagnetic lead. Using the diagrammatic technique in real time, we calculate transport in the sequential and cotunneling regimes for both ferromagnetic and antiferromagnetic exchange coupling between the molecule's LUMO level and the core spin. We show that the current flowing through the system is asymmetric with respect to the bias reversal, being strongly suppressed for particular bias polarizations. Thus, the considered system presents a prototype of a SMM spin diode. In addition, we also show that the functionality of such a device can be tuned by changing the position of the molecule's LUMO level and strongly depends on the type of exchange interaction.Comment: 6 pages with 4 EPS figure

Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices

We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced modulation of the spin-splitting are studied during the charging and discharging processes of p-type GaAs/AlAs double barrier resonant tunneling diodes (RTD) under applied bias and magnetic field. The abrupt changes in the photoluminescence, with the applied bias, provide information of the charge accumulation effects on the device.Comment: 4 pages, 2 figure

2D materials and van der Waals heterostructures

The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With new 2D materials, truly 2D physics has started to appear (e.g. absence of long-range order, 2D excitons, commensurate-incommensurate transition, etc). Novel heterostructure devices are also starting to appear - tunneling transistors, resonant tunneling diodes, light emitting diodes, etc. Composed from individual 2D crystals, such devices utilize the properties of those crystals to create functionalities that are not accessible to us in other heterostructures. We review the properties of novel 2D crystals and how their properties are used in new heterostructure devices

Ferromagnetic Semiconductors: Moving Beyond (Ga,Mn)As

The recent development of MBE techniques for growth of III-V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, i.e. electronics that exploit carrier spin polarization. Among the most carefully studied of these materials is (Ga,Mn)As, in which meticulous optimization of growth techniques has led to reproducible materials properties and ferromagnetic transition temperatures well above 150 K. We review progress in the understanding of this particular material and efforts to address ferromagnetic semiconductors as a class. We then discuss proposals for how these materials might find applications in spintronics. Finally, we propose criteria that can be used to judge the potential utility of newly discovered ferromagnetic semiconductors, and we suggest guidelines that may be helpful in shaping the search for the ideal material.Comment: 37 pages, 4 figure