Computational Modeling and Monte Carlo Simulation of Soft Errors in Flash Memories

International audienc

Study of Radiation-Tolerant SRAM Design

Static Random Access Memories (SRAMs) are important storage components and widely used in digital systems. Meanwhile, with the continuous development and progress of aerospace technologies, SRAMs are increasingly used in electronic systems for spacecraft and satellites. Energetic particles in space environments can cause single event upsets normally referred as soft errors in the memories, which can lead to the failure of systems. Nowadays electronics at the ground level also experience this kind of upset mainly due to cosmic neutrons and alpha particles from packaging materials, and the failure rate can be 10 to 100 times higher than the errors from hardware failures. Therefore, it is important to study the single event effects in SRAMs and develop cost-effective techniques to mitigate these errors. The objectives of this thesis are to evaluate the current mitigation techniques of single event effects in SRAMs and develop a radiation-tolerant SRAM based on the developed techniques. Various radiation sources and the mechanism of their respective effects in Complementary Metal-Oxide Semiconductors(CMOS) devices are reviewed first in the thesis. The radiation effects in the SRAMs, specifically single event effects are studied, and various mitigation techniques are evaluated. Error-correcting codes (ECC) are studied in the thesis since they can detect and correct single bit errors in the cell array, and it is a effective method with low overhead in terms of area, speed, and power. Hamming codes are selected and implemented in the design of the SRAM, to protect the cells from single event upsets in the SRAM. The simulation results show they can prevent the single bit errors in the cell arrays with low area and speed overhead. Another important and vulnerable part of SRAMs in radiation environments is the sense amplifier. It may not generate the correct output during the reading operation if it is hit by an energetic particle. A novel fault-tolerant sense amplifier is introduced and validated with simulations. The results showed that the performance of the new design can be more than ten times better than that of the reference design. When combining the SRAM cell arrays protected with ECC and the radiation-tolerant hardened sense amplifiers, the SRAM can achieve high reliability with low speed and area overhead

A New Single Event Transient Hardened Floating Gate Configurable Logic Circuit

Radiation-induced soft errors have become a significant reliability challenge in modern CMOS logic. The main concern for safety-critical applications such aerospace is due to Single Event Transient (SET) effects. SETs are exacerbated by the technology scaling of modern technologies especially when they are adopted in harsh environments. This paper evaluates the SET sensitivity of state-of-the-art floating gate configurable logic circuit and proposes a novel methodology for filtering a SET pulse generated inside the logic cells by increasing the charge sharing effect on the sensitive node of a cell due to remapping of its configurable switches. Experimental results, performed with radiation particle simulation on several benchmark circuits implemented in a 130nm floating-gate device demonstrate an improvement in filtering SET effects of more than 24% on the average with negligible delay degradation

45-nm Radiation Hardened Cache Design

abstract: Circuits on smaller technology nodes become more vulnerable to radiation-induced upset. Since this is a major problem for electronic circuits used in space applications, designers have a variety of solutions in hand. Radiation hardening by design (RHBD) is an approach, where electronic components are designed to work properly in certain radiation environments without the use of special fabrication processes. This work focuses on the cache design for a high performance microprocessor. The design tries to mitigate radiation effects like SEE, on a commercial foundry 45 nm SOI process. The design has been ported from a previously done cache design at the 90 nm process node. The cache design is a 16 KB, 4 way set associative, write-through design that uses a no-write allocate policy. The cache has been tested to write and read at above 2 GHz at VDD = 0.9 V. Interleaved layout, parity protection, dual redundancy, and checking circuits are used in the design to achieve radiation hardness. High speed is accomplished through the use of dynamic circuits and short wiring routes wherever possible. Gated clocks and optimized wire connections are used to reduce power. Structured methodology is used to build up the entire cache.Dissertation/ThesisM.S. Electrical Engineering 201

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects

Total ionizing dose and single event upset testing of flash based field programmable gate arrays

The effectiveness of implementing field programmable gate arrays (FPGAs) in communication, military, space and high radiation environment applications, coupled with the increased accessibility of private individuals and researchers to launch satellites, has led to an increased interest in commercial off the shelf components. The metal oxide semiconductor (MOS) structures of FPGAs however, are sensitive to radiation effects which can lead to decreased reliability of the device. In order to successfully implement a FPGA based system in a radiation environment, such as on-board a satellite, the single event upset (SEU) and total ionizing dose (TID) characteristics of the device must first be established. This research experimentally determines a research procedure which could accurately determine the SEU cross sections and TID characteristics of various mitigation techniques as well as control circuits implemented in a ProASIC3 A3P1000 FPGA. To gain an understanding of the SEU effects of the implemented circuits, the test FPGA was irradiated by a 66MeV proton beam at the iTemba LABS facility. Through means of irradiation, the SEU cross section of various communication, motor control and mitigation schemes circuits, induced by high energy proton strikes was investigated. The implementation of a full global triple modular redundancy (TMR) and a combination of TMR and a AND-OR multiplexer filter was found to most effectively mitigate SEUs in comparison to the other techniques. When comparing the communication and motor control circuits, the high frequency I2C and SPI circuits experienced a higher number of upsets when compared to a low frequency servo motor control circuit. To gain a better understanding of the absorbed dose effects, experimental TID testing was conducted by irradiating the test FPGA with a cobalt-60 (Co-60) source. An accumulated absorbed dose resulted in the fluctuation of the device supply current and operating voltages as well as resulted in output errors. The TMR and TMR filtering combination mitigation techniques again were found to be the most effective methods of mitigation

Single Event Effect Hardening Designs in 65nm CMOS Bulk Technology

Radiation from terrestrial and space environments is a great danger to integrated circuits (ICs). A single particle from a radiation environment strikes semiconductor materials resulting in voltage and current perturbation, where errors are induced. This phenomenon is termed a Single Event Effect (SEE). With the shrinking of transistor size, charge sharing between adjacent devices leads to less effectiveness of current radiation hardening methods. Improving fault-tolerance of storage cells and logic gates in advanced technologies becomes urgent and important. A new Single Event Upset (SEU) tolerant latch is proposed based on a previous hardened Quatro design. Soft error analysis tools are used and results show that the critical charge of the proposed design is approximately 2 times higher than that of the reference design with negligible penalty in area, delay, and power consumption. A test chip containing the proposed flip-flop chains was designed and exposed to alpha particles as well as heavy ions. Radiation experimental results indicate that the soft error rates of the proposed design are greatly reduced when Linear Energy Transfer (LET) is lower than 4, which makes it a suitable candidate for ground-level high reliability applications. To improve radiation tolerance of combinational circuits, two combinational logic gates are proposed. One is a layout-based hardening Cascode Voltage Switch Logic (CVSL) and the other is a fault-tolerant differential dynamic logic. Results from a SEE simulation tool indicate that the proposed CVSL has a higher critical charge, less cross section, and shorter Single Event Transient (SET) pulses when compared with reference designs. Simulation results also reveal that the proposed differential dynamic logic significantly reduces the SEU rate compared to traditional dynamic logic, and has a higher critical charge and shorter SET pulses than reference hardened design