Single Event Effect Hardening Designs in 65nm CMOS Bulk Technology

Radiation from terrestrial and space environments is a great danger to integrated circuits (ICs). A single particle from a radiation environment strikes semiconductor materials resulting in voltage and current perturbation, where errors are induced. This phenomenon is termed a Single Event Effect (SEE). With the shrinking of transistor size, charge sharing between adjacent devices leads to less effectiveness of current radiation hardening methods. Improving fault-tolerance of storage cells and logic gates in advanced technologies becomes urgent and important. A new Single Event Upset (SEU) tolerant latch is proposed based on a previous hardened Quatro design. Soft error analysis tools are used and results show that the critical charge of the proposed design is approximately 2 times higher than that of the reference design with negligible penalty in area, delay, and power consumption. A test chip containing the proposed flip-flop chains was designed and exposed to alpha particles as well as heavy ions. Radiation experimental results indicate that the soft error rates of the proposed design are greatly reduced when Linear Energy Transfer (LET) is lower than 4, which makes it a suitable candidate for ground-level high reliability applications. To improve radiation tolerance of combinational circuits, two combinational logic gates are proposed. One is a layout-based hardening Cascode Voltage Switch Logic (CVSL) and the other is a fault-tolerant differential dynamic logic. Results from a SEE simulation tool indicate that the proposed CVSL has a higher critical charge, less cross section, and shorter Single Event Transient (SET) pulses when compared with reference designs. Simulation results also reveal that the proposed differential dynamic logic significantly reduces the SEU rate compared to traditional dynamic logic, and has a higher critical charge and shorter SET pulses than reference hardened design

Design of Soft Error Robust High Speed 64-bit Logarithmic Adder

Continuous scaling of the transistor size and reduction of the operating voltage have led to a significant performance improvement of integrated circuits. However, the vulnerability of the scaled circuits to transient data upsets or soft errors, which are caused by alpha particles and cosmic neutrons, has emerged as a major reliability concern. In this thesis, we have investigated the effects of soft errors in combinational circuits and proposed soft error detection techniques for high speed adders. In particular, we have proposed an area-efficient 64-bit soft error robust logarithmic adder (SRA). The adder employs the carry merge Sklansky adder architecture in which carries are generated every 4 bits. Since the particle-induced transient, which is often referred to as a single event transient (SET) typically lasts for 100~200 ps, the adder uses time redundancy by sampling the sum outputs twice. The sampling instances have been set at 110 ps apart. In contrast to the traditional time redundancy, which requires two clock cycles to generate a given output, the SRA generates an output in a single clock cycle. The sampled sum outputs are compared using a 64-bit XOR tree to detect any possible error. An energy efficient 4-input transmission gate based XOR logic is implemented to reduce the delay and the power in this case. The pseudo-static logic (PSL), which has the ability to recover from a particle induced transient, is used in the adder implementation. In comparison with the space redundant approach which requires hardware duplication for error detection, the SRA is 50% more area efficient. The proposed SRA is simulated for different operands with errors inserted at different nodes at the inputs, the carry merge tree, and the sum generation circuit. The simulation vectors are carefully chosen such that the SET is not masked by error masking mechanisms, which are inherently present in combinational circuits. Simulation results show that the proposed SRA is capable of detecting 77% of the errors. The undetected errors primarily result when the SET causes an even number of errors and when errors occur outside the sampling window

プレーナーガタオヨビフィンフェットガタエスラムニオケルチジョウホウシャセンキインシングルイベントアップセットニカンスルジッケンテキケンキュウ

T. Kato et al., "Muon-Induced Single-Event Upsets in 20-nm SRAMs: Comparative Characterization With Neutrons and Alpha Particles," in IEEE Transactions on Nuclear Science, vol. 68, no. 7, pp. 1436-1444, July 2021, doi: 10.1109/TNS.2021.3082559