In-Circuit Mitigation Approach of Single Event Transients for 45nm Flip-Flops

Nowadays, radiation-induced Single Event Transients are a leading cause of critical errors in CMOS nanometric integrated circuits. In this work, we propose a workflow for analyzing and mitigating nanometric CMOS integrated circuits to radiation-induced transient errors. The analysis phase starts with the developed Rad-Ray tool for mimicking the passage of the radiation particles through the silicon matter of the cells to identify the features of the generated transient pulses. The tool is integrated with an electrical simulator to evaluate the dynamic behavior of the transient pulses inserted and propagated in the circuit. A tunable mitigation solution is proposed by inserting the filtering block before the storage element, tuned based on the duration and amplitude of the expected transient pulse, identified in the analysis phase. Experimental results are achieved by applying the proposed approach on the 45 nm Flip-Flop component available in the FreePDK design kit, comparing the Dynamic Error Rate for the original Flip-Flop and the mitigated one which shows a reduction of sensitivity up to 56% with respect of the original version, with negligible degradation of performances

Total ionizing dose and single event upset testing of flash based field programmable gate arrays

The effectiveness of implementing field programmable gate arrays (FPGAs) in communication, military, space and high radiation environment applications, coupled with the increased accessibility of private individuals and researchers to launch satellites, has led to an increased interest in commercial off the shelf components. The metal oxide semiconductor (MOS) structures of FPGAs however, are sensitive to radiation effects which can lead to decreased reliability of the device. In order to successfully implement a FPGA based system in a radiation environment, such as on-board a satellite, the single event upset (SEU) and total ionizing dose (TID) characteristics of the device must first be established. This research experimentally determines a research procedure which could accurately determine the SEU cross sections and TID characteristics of various mitigation techniques as well as control circuits implemented in a ProASIC3 A3P1000 FPGA. To gain an understanding of the SEU effects of the implemented circuits, the test FPGA was irradiated by a 66MeV proton beam at the iTemba LABS facility. Through means of irradiation, the SEU cross section of various communication, motor control and mitigation schemes circuits, induced by high energy proton strikes was investigated. The implementation of a full global triple modular redundancy (TMR) and a combination of TMR and a AND-OR multiplexer filter was found to most effectively mitigate SEUs in comparison to the other techniques. When comparing the communication and motor control circuits, the high frequency I2C and SPI circuits experienced a higher number of upsets when compared to a low frequency servo motor control circuit. To gain a better understanding of the absorbed dose effects, experimental TID testing was conducted by irradiating the test FPGA with a cobalt-60 (Co-60) source. An accumulated absorbed dose resulted in the fluctuation of the device supply current and operating voltages as well as resulted in output errors. The TMR and TMR filtering combination mitigation techniques again were found to be the most effective methods of mitigation

Robust Design of Variation-Sensitive Digital Circuits

The nano-age has already begun, where typical feature dimensions are smaller than 100nm. The operating frequency is expected to increase up to 12 GHz, and a single chip will contain over 12 billion transistors in 2020, as given by the International Technology Roadmap for Semiconductors (ITRS) initiative. ITRS also predicts that the scaling of CMOS devices and process technology, as it is known today, will become much more difficult as the industry advances towards the 16nm technology node and further. This aggressive scaling of CMOS technology has pushed the devices to their physical limits. Design goals are governed by several factors other than power, performance and area such as process variations, radiation induced soft errors, and aging degradation mechanisms. These new design challenges have a strong impact on the parametric yield of nanometer digital circuits and also result in functional yield losses in variation-sensitive digital circuits such as Static Random Access Memory (SRAM) and flip-flops. Moreover, sub-threshold SRAM and flip-flops circuits, which are aggravated by the strong demand for lower power consumption, show larger sensitivity to these challenges which reduces their robustness and yield. Accordingly, it is not surprising that the ITRS considers variability and reliability as the most challenging obstacles for nanometer digital circuits robust design. Soft errors are considered one of the main reliability and robustness concerns in SRAM arrays in sub-100nm technologies due to low operating voltage, small node capacitance, and high packing density. The SRAM arrays soft errors immunity is also affected by process variations. We develop statistical design-oriented soft errors immunity variations models for super-threshold and sub-threshold SRAM cells accounting for die-to-die variations and within-die variations. This work provides new design insights and highlights the important design knobs that can be used to reduce the SRAM cells soft errors immunity variations. The developed models are scalable, bias dependent, and only require the knowledge of easily measurable parameters. This makes them useful in early design exploration, circuit optimization as well as technology prediction. The derived models are verified using Monte Carlo SPICE simulations, referring to an industrial hardware-calibrated 65nm CMOS technology. The demand for higher performance leads to very deep pipelining which means that hundreds of thousands of flip-flops are required to control the data flow under strict timing constraints. A violation of the timing constraints at a flip-flop can result in latching incorrect data causing the overall system to malfunction. In addition, the flip-flops power dissipation represents a considerable fraction of the total power dissipation. Sub-threshold flip-flops are considered the most energy efficient solution for low power applications in which, performance is of secondary importance. Accordingly, statistical gate sizing is conducted to different flip-flops topologies for timing yield improvement of super-threshold flip-flops and power yield improvement of sub-threshold flip-flops. Following that, a comparative analysis between these flip-flops topologies considering the required overhead for yield improvement is performed. This comparative analysis provides useful recommendations that help flip-flops designers on selecting the best flip-flops topology that satisfies their system specifications while taking the process variations impact and robustness requirements into account. Adaptive Body Bias (ABB) allows the tuning of the transistor threshold voltage, Vt, by controlling the transistor body voltage. A forward body bias reduces Vt, increasing the device speed at the expense of increased leakage power. Alternatively, a reverse body bias increases Vt, reducing the leakage power but slowing the device. Therefore, the impact of process variations is mitigated by speeding up slow and less leaky devices or slowing down devices that are fast and highly leaky. Practically, the implementation of the ABB is desirable to bias each device in a design independently, to mitigate within-die variations. However, supplying so many separate voltages inside a die results in a large area overhead. On the other hand, using the same body bias for all devices on the same die limits its capability to compensate for within-die variations. Thus, the granularity level of the ABB scheme is a trade-off between the within-die variations compensation capability and the associated area overhead. This work introduces new ABB circuits that exhibit lower area overhead by a factor of 143X than that of previous ABB circuits. In addition, these ABB circuits are resolution free since no digital-to-analog converters or analog-to-digital converters are required on their implementations. These ABB circuits are adopted to high performance critical paths, emulating a real microprocessor architecture, for process variations compensation and also adopted to SRAM arrays, for Negative Bias Temperature Instability (NBTI) aging and process variations compensation. The effectiveness of the new ABB circuits is verified by post layout simulation results and test chip measurements using triple-well 65nm CMOS technology. The highly capacitive nodes of wide fan-in dynamic circuits and SRAM bitlines limit the performance of these circuits. In addition, process variations mitigation by statistical gate sizing increases this capacitance further and fails in achieving the target yield improvement. We propose new negative capacitance circuits that reduce the overall parasitic capacitance of these highly capacitive nodes. These negative capacitance circuits are adopted to wide fan-in dynamic circuits for timing yield improvement up to 99.87% and to SRAM arrays for read access yield improvement up to 100%. The area and power overheads of these new negative capacitance circuits are amortized over the large die area of the microprocessor and the SRAM array. The effectiveness of the new negative capacitance circuits is verified by post layout simulation results and test chip measurements using 65nm CMOS technology

Study of Single-Event Transient Effects on Analog Circuits

Radiation in space is potentially hazardous to microelectronic circuits and systems such as spacecraft electronics. Transient effects on circuits and systems from high energetic particles can interrupt electronics operation or crash the systems. This phenomenon is particularly serious in complementary metal-oxide-semiconductor (CMOS) integrated circuits (ICs) since most of modern ICs are implemented with CMOS technologies. The problem is getting worse with the technology scaling down. Radiation-hardening-by-design (RHBD) is a popular method to build CMOS devices and systems meeting performance criteria in radiation environment. Single-event transient (SET) effects in digital circuits have been studied extensively in the radiation effect community. In recent years analog RHBD has been received increasing attention since analog circuits start showing the vulnerability to the SETs due to the dramatic process scaling. Analog RHBD is still in the research stage. This study is to further study the effects of SET on analog CMOS circuits and introduces cost-effective RHBD approaches to mitigate these effects. The analog circuits concerned in this study include operational amplifiers (op amps), comparators, voltage-controlled oscillators (VCOs), and phase-locked loops (PLLs). Op amp is used to study SET effects on signal amplitude while the comparator, the VCO, and the PLL are used to study SET effects on signal state during transition time. In this work, approaches based on multi-level from transistor, circuit, to system are presented to mitigate the SET effects on the aforementioned circuits. Specifically, RHBD approach based on the circuit level, such as the op amp, adapts the auto-zeroing cancellation technique. The RHBD comparator implemented with dual-well and triple-well is studied and compared at the transistor level. SET effects are mitigated in a LC-tank oscillator by inserting a decoupling resistor. The RHBD PLL is implemented on the system level using triple modular redundancy (TMR) approach. It demonstrates that RHBD at multi-level can be cost-effective to mitigate the SEEs in analog circuits. In addition, SETs detection approaches are provided in this dissertation so that various mitigation approaches can be implemented more effectively. Performances and effectiveness of the proposed RHBD are validated through SPICE simulations on the schematic and pulsed-laser experiments on the fabricated circuits. The proposed and tested RHBD techniques can be applied to other relevant analog circuits in the industry to achieve radiation-tolerance

Modeling and Mitigation of Soft Errors in Nanoscale SRAMs

Energetic particle (alpha particle, cosmic neutron, etc.) induced single event data upset or soft error has emerged as a key reliability concern in SRAMs in sub-100 nanometre technologies. Low operating voltage, small node capacitance, high packing density, and lack of error masking mechanisms are primarily responsible for the soft error susceptibility of SRAMs. In addition, since SRAM occupies the majority of die area in system-on-chips (SoCs) and microprocessors, different leakage reduction techniques, such as, supply voltage reduction, gated grounding, etc., are applied to SRAMs in order to limit the overall chip leakage. These leakage reduction techniques exponentially increase the soft error rate in SRAMs. The soft error rate is further accentuated by process variations, which are prominent in scaled-down technologies. In this research, we address these concerns and propose techniques to characterize and mitigate soft errors in nanoscale SRAMs. We develop a comprehensive analytical model of the critical charge, which is a key to assessing the soft error susceptibility of SRAMs. The model is based on the dynamic behaviour of the cell and a simple decoupling technique for the non-linearly coupled storage nodes. The model describes the critical charge in terms of NMOS and PMOS transistor parameters, cell supply voltage, and noise current parameters. Consequently, it enables characterizing the spread of critical charge due to process induced variations in these parameters and to manufacturing defects, such as, resistive contacts or vias. In addition, the model can estimate the improvement in critical charge when MIM capacitors are added to the cell in order to improve the soft error robustness. The model is validated by SPICE simulations (90nm CMOS) and radiation test. The critical charge calculated by the model is in good agreement with SPICE simulations with a maximum discrepancy of less than 5%. The soft error rate estimated by the model for low voltage (sub 0.8 V) operations is within 10% of the soft error rate measured in the radiation test. Therefore, the model can serve as a reliable alternative to time consuming SPICE simulations for optimizing the critical charge and hence the soft error rate at the design stage. In order to limit the soft error rate further, we propose an area-efficient multiword based error correction code (MECC) scheme. The MECC scheme combines four 32 bit data words to form a composite 128 bit ECC word and uses an optimized 4-input transmission-gate XOR logic. Thus MECC significantly reduces the area overhead for check-bit storage and the delay penalty for error correction. In addition, MECC interleaves two composite words in a row for limiting cosmic neutron induced multi-bit errors. The ground potentials of the composite words are controlled to minimize leakage power without compromising the read data stability. However, use of composite words involves a unique write operation where one data word is written while other three data words are read to update the check-bits. A power efficient word line signaling technique is developed to facilitate the write operation. A 64 kb SRAM macro with MECC is designed and fabricated in a commercial 90nm CMOS technology. Measurement results show that the SRAM consumes 534 μW at 100 MHz with a data latency of 3.3 ns for a single bit error correction. This translates into 82% per-bit energy saving and 8x speed improvement over recently reported multiword ECC schemes. Accelerated neutron radiation test carried out at TRIUMF in Vancouver confirms that the proposed MECC scheme can correct up to 85% of soft errors

Techniques for Aging, Soft Errors and Temperature to Increase the Reliability of Embedded On-Chip Systems

This thesis investigates the challenge of providing an abstracted, yet sufficiently accurate reliability estimation for embedded on-chip systems. In addition, it also proposes new techniques to increase the reliability of register files within processors against aging effects and soft errors. It also introduces a novel thermal measurement setup that perspicuously captures the infrared images of modern multi-core processors

Study of Radiation Tolerant Storage Cells for Digital Systems

Single event upsets (SEUs) are a significant reliability issue in semiconductor devices. Fully Depleted Silicon-on-Insulator (FDSOI) technologies have been shown to exhibit better SEU performance compared to bulk technologies. This is attributed to the thin Silicon (Si) layer on top of a Buried Oxide (BOX) layer, which allows each transistor to function as an insulated Si island, thus reducing the threat of charge-sharing. Moreover, the small volume of the Si in FDSOI devices results in a reduction of the amount of charge induced by an ion strike. The effects of Total Ionizing Dose (TID) on integrated circuits (ICs) can lead to changes in gate propagation delays, leakage currents, and device functionality. When IC circuits are exposed to ionizing radiation, positive charges accumulate in the gate oxide and field oxide layers, which results in reduced gate control and increased leakage current. TID effects in bulk technologies are usually simpler due to the presence of only one gate oxide layer, but FDSOI technologies have a more complex response to TID effects because of the additional BOX layer. In this research, we aim to address the challenges of developing cost-effective electronics for space applications by bridging the gap between expensive space-qualified components and high-performance commercial technologies. Key research questions involve exploring various radiation-hardening-by-design (RHBD) techniques and their trade-offs, as well as investigating the feasibility of radiation-hardened microcontrollers. The effectiveness of RHBD techniques in mitigating soft errors is well-established. In our study, a test chip was designed using the 22-nm FDSOI process, incorporating multiple RHBD Flip-Flop (FF) chains alongside a conventional FF chain. Three distinct types of ring oscillators (ROs) and a 256 kbit SRAM was also fabricated in the test chip. To evaluate the SEU and TID performance of these designs, we conducted multiple irradiation experiments with alpha particles, heavy ions, and gamma-rays. Alpha particle irradiation tests were carried out at the University of Saskatchewan using an Americium-241 alpha source. Heavy ion experiments were performed at the Texas A&M University Cyclotron Institute, utilizing Ne, Ar, Cu, and Ag in a 15 MeV/amu cocktail. Lastly, TID experiments were conducted using a Gammacell 220 Co-60 chamber at the University of Saskatchewan. By evaluating the performance of these designs under various irradiation conditions, we strive to advance the development of cost-effective, high-performance electronics suitable for space applications, ultimately demonstrating the significance of this project. When exposed to heavy ions, radiation-hardened FFs demonstrated varying levels of improvement in SEU performance, albeit with added power and timing penalties compared to conventional designs. Stacked-transistor DFF designs showed significant enhancement, while charge-cancelling and interleaving techniques further reduced upsets. Guard-gate (GG) based FF designs provided additional SEU protection, with the DFR-FF and GG-DICE FF designs showing zero upsets under all test conditions. Schmitt-trigger-based DFF designs exhibited improved SEU performance, making them attractive choices for hardening applications. The 22-nm FDSOI process proved more resilient to TID effects than the 28-nm process; however, TID effects remained prominent, with increased leakage current and SRAM block degradation at high doses. These findings offer valuable insights for designers aiming to meet performance and SER specifications for circuits in radiation environments, emphasizing the need for additional attention during the design phase for complex radiation-hardened circuits

Cross-Layer Optimization for Power-Efficient and Robust Digital Circuits and Systems

With the increasing digital services demand, performance and power-efficiency become vital requirements for digital circuits and systems. However, the enabling CMOS technology scaling has been facing significant challenges of device uncertainties, such as process, voltage, and temperature variations. To ensure system reliability, worst-case corner assumptions are usually made in each design level. However, the over-pessimistic worst-case margin leads to unnecessary power waste and performance loss as high as 2.2x. Since optimizations are traditionally confined to each specific level, those safe margins can hardly be properly exploited. To tackle the challenge, it is therefore advised in this Ph.D. thesis to perform a cross-layer optimization for digital signal processing circuits and systems, to achieve a global balance of power consumption and output quality. To conclude, the traditional over-pessimistic worst-case approach leads to huge power waste. In contrast, the adaptive voltage scaling approach saves power (25% for the CORDIC application) by providing a just-needed supply voltage. The power saving is maximized (46% for CORDIC) when a more aggressive voltage over-scaling scheme is applied. These sparsely occurred circuit errors produced by aggressive voltage over-scaling are mitigated by higher level error resilient designs. For functions like FFT and CORDIC, smart error mitigation schemes were proposed to enhance reliability (soft-errors and timing-errors, respectively). Applications like Massive MIMO systems are robust against lower level errors, thanks to the intrinsically redundant antennas. This property makes it applicable to embrace digital hardware that trades quality for power savings.Comment: 190 page

Radiation hard FPGA configuration techniques using silicon on sapphire

 Once entirely the domain of space-borne applications, the effects of high energy charged particles on electronics systems is now also a concern for terrestrial devices. Reconfigurable components such as FPGAs are particularly vulnerable to radiation single event effects (SEU) as they carry a large amount of memory within a relatively small amount of circuit area. This thesis presents a Silicon on Insulator (SOI) based configuration memory system in a radiation hard reconfiguration system. The SOI technology used in this particular work is Silicon on Sapphire, where Sapphire is used as the body insulator. A non-volatile storage cell, able to be manufactured in a standard single polysilicon SOI CMOS process with no special layers, is combined with a Schmitt amplifier which result a final structure that exhibits two unique characteristics enhancing its resistance to radiation. Firstly, it is impossible for a radiation induced event to permanently flip the configuration state. Secondly, a partial de-programming resulting in a reduction in the magnitude of the storage cell voltage causes a large change in static current that can be very easily detected using a conventional sense amplifier. A simple current detector of the type used in conventional RAM circuits allows the configuration memory to be set up to exhibit self-correcting, or “auto-scrubbing” behavior. While the combination of SOI EEPROM and Schmitt exhibits high intrinsic resistance to radiation induced errors, it is still possible for a sequence of two particle strikes to cause the configuration value to be lost. Estimates are made of the Soft error Rate (SER) performance of the overall configuration memory structure. A trial layout of a configurable Look Up Table (LUT) is presented as an example of how the SOS EEPROM configuration cell would be deployed in a real system

Circuits and Systems Advances in Near Threshold Computing

Modern society is witnessing a sea change in ubiquitous computing, in which people have embraced computing systems as an indispensable part of day-to-day existence. Computation, storage, and communication abilities of smartphones, for example, have undergone monumental changes over the past decade. However, global emphasis on creating and sustaining green environments is leading to a rapid and ongoing proliferation of edge computing systems and applications. As a broad spectrum of healthcare, home, and transport applications shift to the edge of the network, near-threshold computing (NTC) is emerging as one of the promising low-power computing platforms. An NTC device sets its supply voltage close to its threshold voltage, dramatically reducing the energy consumption. Despite showing substantial promise in terms of energy efficiency, NTC is yet to see widescale commercial adoption. This is because circuits and systems operating with NTC suffer from several problems, including increased sensitivity to process variation, reliability problems, performance degradation, and security vulnerabilities, to name a few. To realize its potential, we need designs, techniques, and solutions to overcome these challenges associated with NTC circuits and systems. The readers of this book will be able to familiarize themselves with recent advances in electronics systems, focusing on near-threshold computing