Effective network grid synthesis and optimization for high performance very large scale integration system design

制度:新 ; 文部省報告番号:甲2642号 ; 学位の種類:博士(工学) ; 授与年月日:2008/3/15 ; 早大学位記番号:新480

Enhancing Variation-aware Analog Circuits Sizing

Today's analog design and verification face significant challenges due to circuit complexity and short time-to-market windows. Moreover, variations in design parameters have an adversely impact on the correctness and performance of analog circuits. Circuit sizing consists in determining the device sizes and biasing voltages and currents such that the circuit satisfies its specifications. Traditionally, analog circuit sizing has been carried out by optimization-based methods, which of course will still be important in the future. Unfortunately, these techniques cannot guarantee an exhaustive coverage of the design search space and hence, are not able to ensure the non-existence of higher quality design solutions. The sizing problem becomes more complicated and computationally expensive under design parameters fluctuation. Indeed, existing yield analysis methods are computationally expensive and still encounter issues in problems with a high-dimensional process parameter space. In this thesis, we present new approaches for enhancing variation-aware analog circuit sizing. The circuit sizing problem is encoded using nonlinear constraints. A new algorithm using Satisfiability Modulo Theory (SMT) solving techniques exhaustively explores the analog design space and computes a continuous set of feasible sizing solutions. Next, a yield optimization stage aims to select the candidate design solution with the highest yield rate in the presence of process parameters variation. For this purpose, a novel method for the computation of parametric yield is proposed. The method combines the advantages of sparse regression and SMT solving techniques. The key idea is to characterize the failure regions as a collection of hyperrectangles in the parameters space. The yield estimation is based on a geometric calculation of probabilistic volumes subtended by the located hyperrectangles. The method can provide very large speed-up over Monte Carlo methods, when a high prediction accuracy is required. A new approach for improving analog yield optimization is also proposed. The optimization is performed in two steps. First, a global optimization phase samples the most potential optimal sub-regions of the feasible design space. The global search locates a design point near the optimal solution. Second, a local optimization phase uses the near optimal solution as a starting point. Also, it constructs linear interpolating models of the yield to explore the basin of convergence and to reach the global optimum. We illustrate the efficiency of the proposed methods on various analog circuits. The application of the yield analysis method on an integrated ring oscillator and a 6T static RAM proves that it is suitable for handling problems with tens of process parameters and can provide speedup of 5X-2000X over Monte Carlo methods. Furthermore, the application of our yield optimization methodology on the examples of a two-stage amplifier and a cascode amplifier shows that our approach can achieve higher quality in analog synthesis and unrivaled coverage of the analog design space when compared to traditional optimization techniques

Parametric Yield of VLSI Systems under Variability: Analysis and Design Solutions

Variability has become one of the vital challenges that the designers of integrated circuits encounter. variability becomes increasingly important. Imperfect manufacturing process manifest itself as variations in the design parameters. These variations and those in the operating environment of VLSI circuits result in unexpected changes in the timing, power, and reliability of the circuits. With scaling transistor dimensions, process and environmental variations become significantly important in the modern VLSI design. A smaller feature size means that the physical characteristics of a device are more prone to these unaccounted-for changes. To achieve a robust design, the random and systematic fluctuations in the manufacturing process and the variations in the environmental parameters should be analyzed and the impact on the parametric yield should be addressed. This thesis studies the challenges and comprises solutions for designing robust VLSI systems in the presence of variations. Initially, to get some insight into the system design under variability, the parametric yield is examined for a small circuit. Understanding the impact of variations on the yield at the circuit level is vital to accurately estimate and optimize the yield at the system granularity. Motivated by the observations and results, found at the circuit level, statistical analyses are performed, and solutions are proposed, at the system level of abstraction, to reduce the impact of the variations and increase the parametric yield. At the circuit level, the impact of the supply and threshold voltage variations on the parametric yield is discussed. Here, a design centering methodology is proposed to maximize the parametric yield and optimize the power-performance trade-off under variations. In addition, the scaling trend in the yield loss is studied. Also, some considerations for design centering in the current and future CMOS technologies are explored. The investigation, at the circuit level, suggests that the operating temperature significantly affects the parametric yield. In addition, the yield is very sensitive to the magnitude of the variations in supply and threshold voltage. Therefore, the spatial variations in process and environmental variations make it necessary to analyze the yield at a higher granularity. Here, temperature and voltage variations are mapped across the chip to accurately estimate the yield loss at the system level. At the system level, initially the impact of process-induced temperature variations on the power grid design is analyzed. Also, an efficient verification method is provided that ensures the robustness of the power grid in the presence of variations. Then, a statistical analysis of the timing yield is conducted, by taking into account both the process and environmental variations. By considering the statistical profile of the temperature and supply voltage, the process variations are mapped to the delay variations across a die. This ensures an accurate estimation of the timing yield. In addition, a method is proposed to accurately estimate the power yield considering process-induced temperature and supply voltage variations. This helps check the robustness of the circuits early in the design process. Lastly, design solutions are presented to reduce the power consumption and increase the timing yield under the variations. In the first solution, a guideline for floorplaning optimization in the presence of temperature variations is offered. Non-uniformity in the thermal profiles of integrated circuits is an issue that impacts the parametric yield and threatens chip reliability. Therefore, the correlation between the total power consumption and the temperature variations across a chip is examined. As a result, floorplanning guidelines are proposed that uses the correlation to efficiently optimize the chip's total power and takes into account the thermal uniformity. The second design solution provides an optimization methodology for assigning the power supply pads across the chip for maximizing the timing yield. A mixed-integer nonlinear programming (MINLP) optimization problem, subject to voltage drop and current constraint, is efficiently solved to find the optimum number and location of the pads

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems

Design of low power, low noise instrumentation amplifiers for MEMS sensor interfacing

La presente tesi di dottorato tratta del progetto di amplificatori da strumentazione in tecnologia CMOS atti ad interfacciare sensori MEMS resistivi. Il progetto di un amplificatore da strumentazione integrato in tecnologia CMOS a basso offset e basso rumore, utilizzato per la lettura di sensori di flusso di tipo MEMS, viene ampliamente discusso. Per raggiungere l'elevata risoluzione richiesta, nell'ordine dei microvolt, sono state utilizzate tecniche dinamiche, come ad esempio la modulazione chopper e il matching dinamico delle porte di ingresso. La stretta banda di frequenze richiesta dall'applicazione viene ottenuta introducendo nell'amplificatore stesso un filtraggio passa-basso del secondo ordine. Sono inoltre stati forniti dei criteri per la progettazione ottima di filtri a bassa frequenza. Infine, viene presentato il progetto di un amplificatore da strumentazione per sensori magnetici integrati, sviluppato presso NXP Semiconductors (NL), durante una internship di 8 mesi, svolta all'interno del Programma di Dottorato

Robust Design of Variation-Sensitive Digital Circuits

The nano-age has already begun, where typical feature dimensions are smaller than 100nm. The operating frequency is expected to increase up to 12 GHz, and a single chip will contain over 12 billion transistors in 2020, as given by the International Technology Roadmap for Semiconductors (ITRS) initiative. ITRS also predicts that the scaling of CMOS devices and process technology, as it is known today, will become much more difficult as the industry advances towards the 16nm technology node and further. This aggressive scaling of CMOS technology has pushed the devices to their physical limits. Design goals are governed by several factors other than power, performance and area such as process variations, radiation induced soft errors, and aging degradation mechanisms. These new design challenges have a strong impact on the parametric yield of nanometer digital circuits and also result in functional yield losses in variation-sensitive digital circuits such as Static Random Access Memory (SRAM) and flip-flops. Moreover, sub-threshold SRAM and flip-flops circuits, which are aggravated by the strong demand for lower power consumption, show larger sensitivity to these challenges which reduces their robustness and yield. Accordingly, it is not surprising that the ITRS considers variability and reliability as the most challenging obstacles for nanometer digital circuits robust design. Soft errors are considered one of the main reliability and robustness concerns in SRAM arrays in sub-100nm technologies due to low operating voltage, small node capacitance, and high packing density. The SRAM arrays soft errors immunity is also affected by process variations. We develop statistical design-oriented soft errors immunity variations models for super-threshold and sub-threshold SRAM cells accounting for die-to-die variations and within-die variations. This work provides new design insights and highlights the important design knobs that can be used to reduce the SRAM cells soft errors immunity variations. The developed models are scalable, bias dependent, and only require the knowledge of easily measurable parameters. This makes them useful in early design exploration, circuit optimization as well as technology prediction. The derived models are verified using Monte Carlo SPICE simulations, referring to an industrial hardware-calibrated 65nm CMOS technology. The demand for higher performance leads to very deep pipelining which means that hundreds of thousands of flip-flops are required to control the data flow under strict timing constraints. A violation of the timing constraints at a flip-flop can result in latching incorrect data causing the overall system to malfunction. In addition, the flip-flops power dissipation represents a considerable fraction of the total power dissipation. Sub-threshold flip-flops are considered the most energy efficient solution for low power applications in which, performance is of secondary importance. Accordingly, statistical gate sizing is conducted to different flip-flops topologies for timing yield improvement of super-threshold flip-flops and power yield improvement of sub-threshold flip-flops. Following that, a comparative analysis between these flip-flops topologies considering the required overhead for yield improvement is performed. This comparative analysis provides useful recommendations that help flip-flops designers on selecting the best flip-flops topology that satisfies their system specifications while taking the process variations impact and robustness requirements into account. Adaptive Body Bias (ABB) allows the tuning of the transistor threshold voltage, Vt, by controlling the transistor body voltage. A forward body bias reduces Vt, increasing the device speed at the expense of increased leakage power. Alternatively, a reverse body bias increases Vt, reducing the leakage power but slowing the device. Therefore, the impact of process variations is mitigated by speeding up slow and less leaky devices or slowing down devices that are fast and highly leaky. Practically, the implementation of the ABB is desirable to bias each device in a design independently, to mitigate within-die variations. However, supplying so many separate voltages inside a die results in a large area overhead. On the other hand, using the same body bias for all devices on the same die limits its capability to compensate for within-die variations. Thus, the granularity level of the ABB scheme is a trade-off between the within-die variations compensation capability and the associated area overhead. This work introduces new ABB circuits that exhibit lower area overhead by a factor of 143X than that of previous ABB circuits. In addition, these ABB circuits are resolution free since no digital-to-analog converters or analog-to-digital converters are required on their implementations. These ABB circuits are adopted to high performance critical paths, emulating a real microprocessor architecture, for process variations compensation and also adopted to SRAM arrays, for Negative Bias Temperature Instability (NBTI) aging and process variations compensation. The effectiveness of the new ABB circuits is verified by post layout simulation results and test chip measurements using triple-well 65nm CMOS technology. The highly capacitive nodes of wide fan-in dynamic circuits and SRAM bitlines limit the performance of these circuits. In addition, process variations mitigation by statistical gate sizing increases this capacitance further and fails in achieving the target yield improvement. We propose new negative capacitance circuits that reduce the overall parasitic capacitance of these highly capacitive nodes. These negative capacitance circuits are adopted to wide fan-in dynamic circuits for timing yield improvement up to 99.87% and to SRAM arrays for read access yield improvement up to 100%. The area and power overheads of these new negative capacitance circuits are amortized over the large die area of the microprocessor and the SRAM array. The effectiveness of the new negative capacitance circuits is verified by post layout simulation results and test chip measurements using 65nm CMOS technology

MUSME 2011 4 th International Symposium on Multibody Systems and Mechatronics

El libro de actas recoge las aportaciones de los autores a través de los correspondientes artículos a la Dinámica de Sistemas Multicuerpo y la Mecatrónica (Musme). Estas disciplinas se han convertido en una importante herramienta para diseñar máquinas, analizar prototipos virtuales y realizar análisis CAD sobre complejos sistemas mecánicos articulados multicuerpo. La dinámica de sistemas multicuerpo comprende un gran número de aspectos que incluyen la mecánica, dinámica estructural, matemáticas aplicadas, métodos de control, ciencia de los ordenadores y mecatrónica. Los artículos recogidos en el libro de actas están relacionados con alguno de los siguientes tópicos del congreso: Análisis y síntesis de mecanismos ; Diseño de algoritmos para sistemas mecatrónicos ; Procedimientos de simulación y resultados ; Prototipos y rendimiento ; Robots y micromáquinas ; Validaciones experimentales ; Teoría de simulación mecatrónica ; Sistemas mecatrónicos ; Control de sistemas mecatrónicosUniversitat Politècnica de València (2011). MUSME 2011 4 th International Symposium on Multibody Systems and Mechatronics. Editorial Universitat Politècnica de València. http://hdl.handle.net/10251/13224Archivo delegad

Smart Grid, Demand Response and Optimization: A Critical Review of Computational Methods

In view of scarcity of traditional energy resources and environmental issues, renewable energy resources (RERs) are introduced to fulfill the electricity requirement of growing world. Moreover, the effective utilization of RERs to fulfill the varying electricity demands of customers can be achieved via demand response (DR). Furthermore, control techniques, decision variables and offered motivations are the ways to introduce DR into distribution network (DN). This categorization needs to be optimized to balance the supply and demand in DN. Therefore, intelligent algorithms are employed to achieve optimized DR. However, these algorithms are computationally restrained to handle the parametric load of uncertainty involved with RERs and power system. Henceforth, this paper focuses on the limitations of intelligent algorithms for DR. Furthermore, a comparative study of different intelligent algorithms for DR is discussed. Based on conclusions, quantum algorithms are recommended to optimize the computational burden for DR in future smart grid