221 research outputs found

    Design of a Comparator and an Amplifier in CMOS using standard logic gates

    Get PDF
    Using standard logic gates in CMOS, or standard-cells, has the advantage of full synthe- sizability, as well as the voltage scalability between technologies. In this work a general pur- pose standard-cell-based voltage comparator and amplifier are presented. The objective is to design a general purpose standard-cell-based comparator and ampli- fier in 130 nm CMOS by optimizing the already existing topologies with the aim of improving some of the specifications of the studied topologies. Various simulation testbenches were made to test the studied topologies of comparators and amplifiers, in which the results were compared. The top performing standard-cell com- parator and amplifier were then modified. After successfully designing the comparator, it was used in the design of an opamp-less Sigma-Delta modulator (ΣΔM). The proposed comparator is an OR-AND-Inverter-based comparator with dual inputs and outputs, achieving a delay of 109 ps, static input offset of 591 μV, and random offset of 10.42 μV, while dissipating 890 μW, when clocked at 1.5 GHz. The proposed amplifier is a single-path three-stage inverter-based operational transcon- ductance amplifier (OTA) with active common-mode feedback loop, achieving a DC gain of 63 dB, 1444 MHz of unity-gain bandwidth, 51º of phase margin while dissipating 1098 μW, considering a load of 1 pF. The proposed comparator was employed in the ΣΔM with a standard-cell based edge- triggered flip-flop. The ΣΔM, with a sampling frequency of 2 MHz and a signal bandwidth of 2.5 kHz, achieved a peak SNDR of 69 dB while dissipating only 136.7 μW.Utilizando portas lógicas básicas em CMOS oferece a vantagem de um circuito comple- tamente sintetizável, tal como o escalamento de tensão entre tecnologias. Neste trabalho são apresentados um comparador de tensão e um amplificador utilizando portas lógicas. O objetivo deste trabalho é desenhar um comparador e um amplificador utilizando por- tas lógicas através do estudo e otimização de topologias já existentes com a finalidade de me- lhoramento de algumas das especificações das mesmas. Foram realizados vários bancos de teste para testar as topologias estudadas de compa- radores e amplificadores, em que os resultados foram comparados. As topologias de compa- radores e amplificadores de portas lógicas com melhor performance foram então modificadas. Após o comparador ter sido projetado com sucesso, foi utilizado na projeção de um modula- dor Sigma-Delta (ΣΔM) opamp-less. O comparador proposto é um OR-AND-Inversor com duas entradas e saídas, que apre- senta um atraso de 109 ps, offset estático na entrada de 591 μV, offset aleatório de 10.42 μV, enquanto dissipando 890 μW, utilizando uma frequência de relógio de 1.5 GHz O amplificador proposto é um amplificador operacional de transcondutância single- path three-stage inverter-based com um loop ativo de realimentação do modo-comum, que apresenta um ganho DC de 63 dB, 1444 MHz de ganho-unitário de largura de banda, 51º de margem de fase e dissipando 1098 μW, considerando uma carga de 1 pF. O comparador proposto foi aplicado no ΣΔM com um flip-flop edge-triggered baseado em portas lógicas. O ΣΔM, com uma frequência de amostragem de 2 MHz e uma largura de banda de 2.5 kHz, apresentou um SNDR máximo de 69 dB enquanto dissipando apenas 136.7 μW

    Fully-Digital Rail-to-Rail OTA with Sub-1,000 μm2 Area, 250-mV Minimum Supply and nW Power at 150-pF Load in 180nm

    Get PDF
    A fully-digital operational transconductance amplifier (DIGOTA) architecture for tightly energy-constrained low-cost systems is presented. A 180nm DIGOTA testchip exhibits an area below the 1,000-μm2 wall, and 2.4-nW power under 150pF load, and a minimum supply voltage Vmin of 0.25 V. In the 0.3-0.5 V supply range, DIGOTA improves the areanormalized small (large) signal energy FoM by at least 836X (267X) over prior sub-500mV OTAs, while reducing area by 27-85X. The low-Vmin and nW-power features are shown to enable direct harvesting at the mm scale

    Digital-based analog processing in nanoscale CMOS ICs for IoT applications

    Get PDF
    The Internet-of-Things (IoT) concept has been opening up a variety of applications, such as urban and environmental monitoring, smart health, surveillance, and home automation. Most of these IoT applications require more and more power/area efficient Complemen tary Metal–Oxide–Semiconductor (CMOS) systems and faster prototypes (lower time-to market), demanding special modifications in the current IoT design system bottleneck: the analog/RF interfaces. Specially after the 2000s, it is evident that there have been significant improvements in CMOS digital circuits when compared to analog building blocks. Digital circuits have been taking advantage of CMOS technology scaling in terms of speed, power consump tion, and cost, while the techniques running behind the analog signal processing are still lagging. To decrease this historical gap, there has been an increasing trend in finding alternative IC design strategies to implement typical analog functions exploiting Digital in-Concept Design Methodologies (DCDM). This idea of re-thinking analog functions in digital terms has shown that Analog ICs blocks can also avail of the feature-size shrinking and energy efficiency of new technologies. This thesis deals with the development of DCDM, demonstrating its compatibility for Ultra-Low-Voltage (ULV) and Power (ULP) IoT applications. This work proves this state ment through the proposing of new digital-based analog blocks, such as an Operational Transconductance Amplifiers (OTAs) and an ac-coupled Bio-signal Amplifier (BioAmp). As an initial contribution, for the first time, a silicon demonstration of an embryonic Digital-Based OTA (DB-OTA) published in 2013 is exhibited. The fabricated DB-OTA test chip occupies a compact area of 1,426 µm2 , operating at supply voltages (VDD) down to 300 mV, consuming only 590 pW while driving a capacitive load of 80pF. With a Total Harmonic Distortion (THD) lower than 5% for a 100mV input signal swing, its measured small-signal figure of merit (FOMS) and large-signal figure of merit (FOML) are 2,101 V −1 and 1,070, respectively. To the best of this thesis author’s knowledge, this measured power is the lowest reported to date in OTA literature, and its figures of merit are the best in sub-500mV OTAs reported to date. As the second step, mainly due to the robustness limitation of previous DB-OTA, a novel calibration-free digital-based topology is proposed, named here as Digital OTA (DIG OTA). A 180-nm DIGOTA test chip is also developed exhibiting an area below the 1000 µm2 wall, 2.4nW power under 150pF load, and a minimum VDD of 0.25 V. The proposed DIGOTA is more digital-like compared with DB-OTA since no pseudo-resistor is needed. As the last contribution, the previously proposed DIGOTA is then used as a building block to demonstrate the operation principle of power-efficient ULV and ultra-low area (ULA) fully-differential, digital-based Operational Transconductance Amplifier (OTA), suitable for microscale biosensing applications (BioDIGOTA) such as extreme low area Body Dust. Measured results in 180nm CMOS confirm that the proposed BioDIGOTA can work with a supply voltage down to 400 mV, consuming only 95 nW. The BioDIGOTA layout occupies only 0.022 mm2 of total silicon area, lowering the area by 3.22X times compared to the current state of the art while keeping reasonable system performance, such as 7.6 Noise Efficiency Factor (NEF) with 1.25 µVRMS input-referred noise over a 10 Hz bandwidth, 1.8% of THD, 62 dB of the common-mode rejection ratio (CMRR) and 55 dB of power supply rejection ratio (PSRR). After reviewing the current DCDM trend and all proposed silicon demonstrations, the thesis concludes that, despite the current analog design strategies involved during the analog block development

    Digital-Based Analog Processing in Nanoscale CMOS ICs for IoT Applications

    Get PDF
    L'abstract è presente nell'allegato / the abstract is in the attachmen

    A 0.3 V rail-to-rail ultra-low-power OTA with improved bandwidth and slew rate

    Get PDF
    In this paper, we present a novel operational transconductance amplifier (OTA) topology based on a dual-path body-driven input stage that exploits a body-driven current mirror-active load and targets ultra-low-power (ULP) and ultra-low-voltage (ULV) applications, such as IoT or biomedical devices. The proposed OTA exhibits only one high-impedance node, and can therefore be compensated at the output stage, thus not requiring Miller compensation. The input stage ensures rail-to-rail input common-mode range, whereas the gate-driven output stage ensures both a high open-loop gain and an enhanced slew rate. The proposed amplifier was designed in an STMicroelectronics 130 nm CMOS process with a nominal supply voltage of only 0.3 V, and it achieved very good values for both the small-signal and large-signal Figures of Merit. Extensive PVT (process, supply voltage, and temperature) and mismatch simulations are reported to prove the robustness of the proposed amplifier

    Performance enhancement in the desing of amplifier and amplifier-less circuits in modern CMOS technologies.

    Get PDF
    In the context of nowadays CMOS technology downscaling and the increasing demand of high performance electronics by industry and consumers, analog design has become a major challenge. On the one hand, beyond others, amplifiers have traditionally been a key cell for many analog systems whose overall performance strongly depends on those of the amplifier. Consequently, still today, achieving high performance amplifiers is essential. On the other hand, due to the increasing difficulty in achieving high performance amplifiers in downscaled modern technologies, a different research line that replaces the amplifier by other more easily achievable cells appears: the so called amplifier-less techniques. This thesis explores and contributes to both philosophies. Specifically, a lowvoltage differential input pair is proposed, with which three multistage amplifiers in the state of art are designed, analysed and tested. Moreover, a structure for the implementation of differential switched capacitor circuits, specially suitable for comparator-based circuits, that features lower distortion and less noise than the classical differential structures is proposed, an, as a proof of concept, implemented in a ΔΣ modulator

    Power-Efficient and High-Performance Cicruit Techniques for On-Chip Voltage Regulation and Low-Voltage Filtering

    Get PDF
    This dissertation focuses on two projects. The first one is a power supply rejection (PSR) enhanced with fast settling time (TS) bulk-driven feedforward (BDFF) capacitor-less (CL) low-dropout (LDO) regulator. The second project is a high bandwidth (BW) power adjustable low-voltage (LV) active-RC 4th -order Butterworth low pass filter (LPF). As technology improves, faster and more accurate LDOs with high PSR are going to be required for future on-chip applications and systems.The proposed BDFF CL-LDO will accomplish an improved PSR without degrading TS. This would be achieved by injecting supply noise through the pass device’s bulk terminal in order to cancel the supply noise at the output. The supply injection will be achieved by creating a feedforward path, which compared to feedback paths, that doesn’t degrade stability and therefore allows for faster dynamic performance. A high gain control loop would be used to maintain a high accuracy and dc performance, such as line/load regulation. The proposed CL-LDO will target a PSR better than – 90 dB at low frequencies and – 60 dB at 1 MHz for 50 mA of load current (IvL). The CL-LDO will target a loop gain higher than 90 dB, leading to an improved line and load regulation, and unity-gain frequency (UGF) higher than 20 MHz, which will allow a TS faster than 500 ns. The CL-LDO is going to be fabricated in a CMOS 130 nm technology; consume a quiescent current (IQ) of less than 50 μA; for a dropout voltage of 200 mV and an IvL of 50 mA. As technology scales down, speed and performance requirements increase for on-chip communication systems that reflect the current demand for high speed data-oriented applications. However, in small technologies, it becomes harder to achieve high gain and high speed at the same time because the supply voltage (VvDvD) decreases leaving no room for conventional high gain CMOS structures. The proposed active-RC LPF will accomplish a LV high BW operation that would allow such disadvantages to be overcome. The LPF will be implemented using an active RC structure that allows for the high linearity such communication systems demand. In addition, built-in BW and power configurability would address the demands for increased flexibility usually required in such systems. The proposed LV LPF will target a configurable cut-off frequency (ƒо) of 20/40/80/160 MHz with tuning capabilities and power adjustability for each ƒо. The filter will be fabricated in a CMOS 130 nm technology. The filter characteristics are as following: 4th -order, active-RC, LPF, Butterworth response, VDD = 0.6 V, THD higher than 40 dB and a third-order input intercept point (IIP3) higher than 10 dBm

    A Four-stage Power and Area Efficient OTA with 30 × (400pf – 12nf) Capacitive Load Drive Range

    Get PDF
    Multistage operational transconductance amplifier (OTA) has been a major research focus as a solution to high DC Gain high Gain Bandwidth and wide voltage swing requirement on sub-micron devices. These system requirements, in addition to ultra-large capacitive load drivability (nF-range load capacitor), are useful in applications including LCD drivers, low dropout (LDO) linear regulators, headphone drivers, etc. The major drawback of multistage OTAs is the stability concerns since each added stage introduces low frequency poles. Numerous compensation schemes for three stage OTAs have been proposed in the past decade with only a few four stage OTA in literature. The proposed design is a four stage OTA which uses an active zero block (AZB) to provide left half plane (LHP) zero to help with phase degradation. AZB is embedded in the second stage ensuring reuse of existing block hence providing area and power savings. This design also uses single miller capacitor in the outer loop which ensures improved speed performance with minimal area overhead. A very reliable slew helper is implemented in this design to help with the large signal performance. The slew helper is only operational in the events slewing and does not affect the small signal performance. The proposed design achieves a DC gain of 114 dB, GBW > 1.77MHz and PM > 46.9⁰ for capacitive load ranging from 400pF–12nF (30x) which is the highest recorded range in literature for these type of compensation. It does this by consuming a total power of 143.5µW and an area of 0.007mm^2

    1.0 v-0.18 µm CMOS tunable low pass filters with 73 db dr for on-chip sensing acquisition systems

    Get PDF
    This paper presents a new approach based on the use of a Current Steering (CS) technique for the design of fully integrated Gm–C Low Pass Filters (LPF) with sub-Hz to kHz tunable cut-off frequencies and an enhanced power-area-dynamic range trade-off. The proposed approach has been experimentally validated by two different first-order single-ended LPFs designed in a 0.18 µm CMOS technology powered by a 1.0 V single supply: a folded-OTA based LPF and a mirrored-OTA based LPF. The first one exhibits a constant power consumption of 180 nW at 100 nA bias current with an active area of 0.00135 mm2 and a tunable cutoff frequency that spans over 4 orders of magnitude (~100 mHz–152 Hz @ CL = 50 pF) preserving dynamic figures greater than 78 dB. The second one exhibits a power consumption of 1.75 µW at 500 nA with an active area of 0.0137 mm2 and a tunable cutoff frequency that spans over 5 orders of magnitude (~80 mHz–~1.2 kHz @ CL = 50 pF) preserving a dynamic range greater than 73 dB. Compared with previously reported filters, this proposal is a competitive solution while satisfying the low-voltage low-power on-chip constraints, becoming a preferable choice for general-purpose reconfigurable front-end sensor interfaces
    corecore