Addressing On-Chip Power Conversion and Dissipation Issues in Many-Core System-on-a-Chip based on Conventional Silicon and Emerging Nanotechnologies

Title from PDF of title page viewed August 27, 2018Dissertation advisor: Masud H ChowdhuryVitaIncludes bibliographical references (pages 158-163)Thesis (Ph.D.)--School of Computing and Engineering and Department of Physics and Astronomy. University of Missouri--Kansas City, 2017Integrated circuits (ICs) are moving towards system-on-a-chip (SOC) designs. SOC allows various small and large electronic systems to be implemented in a single chip. This approach enables the miniaturization of design blocks that leads to high density transistor integration, faster response time, and lower fabrication costs. To reap the benefits of SOC and uphold the miniaturization of transistors, innovative power delivery and power dissipation management schemes are paramount. This dissertation focuses on on-chip integration of power delivery systems and managing power dissipation to increase the lifetime of energy storage elements. We explore this problem from two different angels: On-chip voltage regulators and power gating techniques. On-chip voltage regulators reduce parasitic effects, and allow faster and efficient power delivery for microprocessors. Power gating techniques, on the other hand, reduce the power loss incurred by circuit blocks during standby mode. Power dissipation (Ptotal = Pstatic and Pdynamic) in a complementary metal-oxide semiconductor (CMOS) circuit comes from two sources: static and dynamic. A quadratic dependency on the dynamic switching power and a more than linear dependency on static power as a form of gate leakage (subthreshold current) exist. To reduce dynamic power loss, the supply power should be reduced. A significant reduction in power dissipation occurs when portions of a microprocessor operate at a lower voltage level. This reduction in supply voltage is achieved via voltage regulators or converters. Voltage regulators are used to provide a stable power supply to the microprocessor. The conventional off-chip switching voltage regulator contains a passive floating inductor, which is difficult to be implemented inside the chip due to excessive power dissipation and parasitic effects. Additionally, the inductor takes a very large chip area while hampering the scaling process. These limitations make passive inductor based on-chip regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon-on ferroelectric-insulator field effect transistor (SOFFET). In both of the designs, the ability to control the threshold voltage via bias voltage at the back gate makes both devices more flexible for sleep transistors design than a bulk MOSFET. The proposed approaches simplify the design complexity, reduce the chip area, eliminate the voltage drop by sleep transistor, and improve power dissipation. In addition, the design provides a dynamically controlled Vt for times when the circuit needs to be in a sleep or switching mode.Introduction -- Background and literature review -- Fully integrated on-chip switching voltage regulator -- Hybrid LDO voltage regulator based on cascaded second order multiple feedback loop -- Single and dual output two-stage on-chip power management system -- Sleep transistor design using double-gate FDSOI -- Subthreshold region sleep transistor design -- Conclusio

Study of Radiation Effects on 28nm UTBB FDSOI Technology

With the evolution of modern Complementary Metal-Oxide-Semiconductor (CMOS) technology, transistor feature size has been scaled down to nanometers. The scaling has resulted in tremendous advantages to the integrated circuits (ICs), such as higher speed, smaller circuit size, and lower operating voltage. However, it also creates some reliability concerns. In particular, small device dimensions and low operating voltages have caused nanoscale ICs to become highly sensitive to operational disturbances, such as signal coupling, supply and substrate noise, and single event effects (SEEs) caused by ionizing particles, like cosmic neutrons and alpha particles. SEEs found in ICs can introduce transient pulses in circuit nodes or data upsets in storage cells. In well-designed ICs, SEEs appear to be the most troublesome in a space environment or at high altitudes in terrestrial environment. Techniques from the manufacturing process level up to the system design level have been developed to mitigate radiation effects. Among them, silicon-on-insulator (SOI) technologies have proven to be an effective approach to reduce single-event effects in ICs. So far, 28nm ultra-thin body and buried oxide (UTBB) Fully Depleted SOI (FDSOI) by STMicroelectronics is one of the most advanced SOI technologies in commercial applications. Its resilience to radiation effects has not been fully explored and it is of prevalent interest in the radiation effects community. Therefore, two test chips, namely ST1 and AR0, were designed and tested to study SEEs in logic circuits fabricated with this technology. The ST1 test chip was designed to evaluate SET pulse widths in logic gates. Three kinds of the on-chip pulse-width measurement detectors, namely the Vernier detector, the Pulse Capture detector and the Pulse Filter detector, were implemented in the ST1 chip. Moreover, a Circuit for Radiation Effects Self-Test (CREST) chain with combinational logic was designed to study both SET and SEU effects. The ST1 chip was tested using a heavy ion irradiation beam source in Radiation Effects Facility (RADEF), Finland. The experiment results showed that the cross-section of the 28nm UTBB-FDSOI technology is two orders lower than its bulk competitors. Laser tests were also applied to this chip to research the pulse distortion effects and the relationship between SET, SEU and the clock frequency. Total Ionizing Dose experiments were carried out at the University of Saskatchewan and European Space Agency with Co-60 gammacell radiation sources. The test results showed the devices implemented in the 28nm UTBB-FDSOI technology can maintain its functionality up to 1 Mrad(Si). In the AR0 chip, we designed five ARM Cortex-M0 cores with different logic protection levels to investigate the performance of approximate logic protecting methods. There are three custom-designed SRAM blocks in the test chip, which can also be used to measure the SEU rate. From the simulation result, we concluded that the approximate logic methodology can protect the digital logic efficiently. This research comprehensively evaluates the radiation effects in the 28nm UTBB-FDSOI technology, which provides the baseline for later radiation-hardened system designs in this technology

Design of variability compensation architectures of digital circuits with adaptive body bias

The most critical concern in circuit is to achieve high level of performance with very tight power constraint. As the high performance circuits moved beyond 45nm technology one of the major issues is the parameter variation i.e. deviation in process, temperature and voltage (PVT) values from nominal specifications. A key process parameter subject to variation is the transistor threshold voltage (Vth) which impacts two important parameters: frequency and leakage power. Although the degradation can be compensated by the worstcase scenario based over-design approach, it induces remarkable power and performance overhead which is undesirable in tightly constrained designs. Dynamic voltage scaling (DVS) is a more power efficient approach, however its coarse granularity implies difficulty in handling fine grained variations. These factors have contributed to the growing interest in power aware robust circuit design. We propose a variability compensation architecture with adaptive body bias, for low power applications using 28nm FDSOI technology. The basic approach is based on a dynamic prediction and prevention of possible circuit timing errors. In our proposal we are using a Canary logic technique that enables the typical-case design. The body bias generation is based on a DLL type method which uses an external reference generator and voltage controlled delay line (VCDL) to generate the forward body bias (FBB) control signals. The adaptive technique is used for dynamic detection and correction of path failures in digital designs due to PVT variations. Instead of tuning the supply voltage, the key idea of the design approach is to tune the body bias voltage bymonitoring the error rate during operation. The FBB increases operating speed with an overhead in leakage power

Gated pipelined folding ADC based low power sensor for large-scale radiometric partial discharge monitoring

Partial discharge is a well-established metric for condition assessment of high-voltage plant equipment. Traditional techniques for partial discharge detection involve physical connection of sensors to the device under observation, limiting sensors to monitoring of individual apparatus, and therefore, limiting coverage. Wireless measurement provides an attractive low-cost alternative. The measurement of the radiometric signal propagated from a partial discharge source allows for multiple plant items to be observed by a single sensor, without any physical connection to the plant. Moreover, the implementation of a large-scale wireless sensor network for radiometric monitoring facilitates a simple approach to high voltage fault diagnostics. However, accurate measurement typically requires fast data conversion rates to ensure accurate measurement of faults. The use of high-speed conversion requires continuous high-power dissipation, degrading sensor efficiency and increasing cost and complexity. Thus, we propose a radiometric sensor which utilizes a gated, pipelined, sample-and-hold based folding analogue-todigital converter structure that only samples when a signal is received, reducing the power consumption and increasing the efficiency of the sensor. A proof of concept circuit has been developed using discrete components to evaluate the performance and power consumption of the system

Floating-Gate Design and Linearization for Reconfigurable Analog Signal Processing

Analog and mixed-signal integrated circuits have found a place in modern electronics design as a viable alternative to digital pre-processing. With metrics that boast high accuracy and low power consumption, analog pre-processing has opened the door to low-power state-monitoring systems when it is utilized in place of a power-hungry digital signal-processing stage. However, the complicated design process required by analog and mixed-signal systems has been a barrier to broader applications. The implementation of floating-gate transistors has begun to pave the way for a more reasonable approach to analog design. Floating-gate technology has widespread use in the digital domain. Analog and mixed-signal use of floating-gate transistors has only become a rising field of study in recent years. Analog floating gates allow for low-power implementation of mixed-signal systems, such as the field-programmable analog array, while simultaneously opening the door to complex signal-processing techniques. The field-programmable analog array, which leverages floating-gate technologies, is demonstrated as a reliable replacement to signal-processing tasks previously only solved by custom design. Living in an analog world demands the constant use and refinement of analog signal processing for the purpose of interfacing with digital systems. This work offers a comprehensive look at utilizing floating-gate transistors as the core element for analog signal-processing tasks. This work demonstrates the floating gate\u27s merit in large reconfigurable array-driven systems and in smaller-scale implementations, such as linearization techniques for oscillators and analog-to-digital converters. A study on analog floating-gate reliability is complemented with a temperature compensation scheme for implementing these systems in ever-changing, realistic environments

An Adiabatic Capacitive Artificial Neuron With RRAM-Based Threshold Detection for Energy-Efficient Neuromorphic Computing

In the quest for low power, bio-inspired computation both memristive and memcapacitive-based Artificial Neural Networks (ANN) have been the subjects of increasing focus for hardware implementation of neuromorphic computing. One step further, regenerative capacitive neural networks, which call for the use of adiabatic computing, offer a tantalising route towards even lower energy consumption, especially when combined with `memimpedace' elements. Here, we present an artificial neuron featuring adiabatic synapse capacitors to produce membrane potentials for the somas of neurons; the latter implemented via dynamic latched comparators augmented with Resistive Random-Access Memory (RRAM) devices. Our initial 4-bit adiabatic capacitive neuron proof-of-concept example shows 90% synaptic energy saving. At 4 synapses/soma we already witness an overall 35% energy reduction. Furthermore, the impact of process and temperature on the 4-bit adiabatic synapse shows a maximum energy variation of 30% at 100 degree Celsius across the corners without any functionality loss. Finally, the efficacy of our adiabatic approach to ANN is tested for 512 & 1024 synapse/neuron for worst and best case synapse loading conditions and variable equalising capacitance's quantifying the expected trade-off between equalisation capacitance and range of optimal power-clock frequencies vs. loading (i.e. the percentage of active synapses).Comment: This work has been accepted to the IEEE TCAS-

Design of a low power switched-capacitor pipeline analog-to-digital converter

An Analog to Digital Converter (ADC) is a circuit which converts an analog signal into digital signal. Real world is analog, and the data processed by the computer or by other signal processing systems is digital. Therefore, the need for ADCs is obvious. In this thesis, several novel designs used to improve ADCs operation speed and reduce ADC power consumption are proposed. First, a high speed switched source follower (SSF) sample and hold amplifier without feedthrough penalty is implemented and simulated. The SSF sample and hold amplifier can achieve 6 Bit resolution with sampling rate at 10Gs/s. Second, a novel rail-to-rail time domain comparator used in successive approximation register ADC (SAR ADC) is implemented and simulated. The simulation results show that the proposed SAR ADC can only consume 1.3 muW with a 0.7 V power supply. Finally, a prototype pipeline ADC is implemented and fabricated in an IBM 90nm CMOS process. The proposed design is validated using measurement on a fabricated silicon IC, and the proposed 10-bit ADC achieves a peak signal-to-noise- and-distortion-ratio (SNDR) of 47 dB. This SNDR translates to a figure of merit (FOM) of 2.6N/conversion-step with a 1.2 V power supply

Functional and timing implications of transient faults in critical systems

Embedded systems in critical domains, such as auto-motive, aviation, space domains, are often required to guarantee both functional and temporal correctness. Considering transient faults, fault analysis and mitigation approaches are implemented at various levels of the system design, in order to maintain the functional correctness. However, transient faults and their mitigation methods have a timing impact, which can affect the temporal correctness of the system. In this work, we expose the functional and the timing implications of transient faults for critical systems. More precisely, we initially highlight the timing effect of transient faults occurring in the combinational and sequential logic of a processor. Furthermore, we propose a full stack vulnerability analysis that drives the design of selective hardware-based mitigation for real-time applications. Last, we study the timing impact of software-based reliability mitigation methods applied in a COTS GPU, using a fault tolerant middleware.This work has been partially funded by ANR-FASY (ANR-21-CE25-0008-01) and received funding by ESA through the 4000136514/21/NL/GLC/my co-funded PhD activity ”Mixed Software/Hardware-based Fault-tolerance Techniques for Complex COTS System-on-Chip in Radiation Environments” and the GPU4S (GPU for Space) project. Moreover, it was partially supported by the Spanish Ministry of Economy and Competitiveness under grants PID2019-107255GB-C21 and IJC2020-045931-I (Spanish State Research Agency / http://dx.doi.org/10.13039/501100011033), by the European Union’s Horizon 2020 grant agreement No 739551 (KIOS CoE) and from the Government of the Republic of Cyprus through the Cyprus Deputy Ministry of Research, Innovation and Digital Policy.Peer ReviewedPostprint (author's final draft

Radiation Tolerant Electronics, Volume II

Research on radiation tolerant electronics has increased rapidly over the last few years, resulting in many interesting approaches to model radiation effects and design radiation hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation hardened electronics for space applications, high-energy physics experiments such as those on the large hadron collider at CERN, and many terrestrial nuclear applications, including nuclear energy and safety management. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their ionizing radiation susceptibility has raised many exciting challenges, which are expected to drive research in the coming decade.After the success of the first Special Issue on Radiation Tolerant Electronics, the current Special Issue features thirteen articles highlighting recent breakthroughs in radiation tolerant integrated circuit design, fault tolerance in FPGAs, radiation effects in semiconductor materials and advanced IC technologies and modelling of radiation effects