Electrical characterization of the soft breakdown failure mode in MgO layers

The soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is captured by a power-law time dependence. We also show that the SBD current-voltage (I-V) characteristics follow the power-law model I = aVb typical of this conduction mechanism but in a wider voltage window than the one reported in the past for SiO2. The relationship between the magnitude of the current and the normalized differential conductance was analyzed

A simple and versatile method for statistical analysis of the electrical properties of individual double walled carbon nanotubes

Double-walled carbon nanotubes (DWNTs) are potential candidates for new generation of on chip interconnections due to their nearly metallic behaviour. For such large scale integration purpose it is mandatory to characterize their electrical properties in a statistical way. We thus propose a new methodology for characterizing in one step, the electrical properties of a large population of nanotubes. The method enables to obtain histograms of the conductance and maximum current density of individual nanoobjects

Study of switching transients in high frequency converters

As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is evaluated

The Alternate Arm Converter: A New Hybrid Multilevel Converter With DC-Fault Blocking Capability

This paper explains the working principles, supported by simulation results, of a new converter topology intended for HVDC applications, called the alternate arm converter (AAC). It is a hybrid between the modular multilevel converter, because of the presence of H-bridge cells, and the two-level converter, in the form of director switches in each arm. This converter is able to generate a multilevel ac voltage and since its stacks of cells consist of H-bridge cells instead of half-bridge cells, they are able to generate higher ac voltage than the dc terminal voltage. This allows the AAC to operate at an optimal point, called the “sweet spot,” where the ac and dc energy flows equal. The director switches in the AAC are responsible for alternating the conduction period of each arm, leading to a significant reduction in the number of cells in the stacks. Furthermore, the AAC can keep control of the current in the phase reactor even in case of a dc-side fault and support the ac grid, through a STATCOM mode. Simulation results and loss calculations are presented in this paper in order to support the claimed features of the AAC

AC vs. DC Boost Converters: A Detailed Conduction Loss Comparison

Studies have shown the efficiency benefits of DC dis- tribution systems are largely due to the superior performance of DC/DC converters. Nonetheless, these studies are often based on product data that differs widely in manufacturer and operating voltage. This work develops a rigorous loss model to theoretically compare the efficiency of a DC/DC and an AC/DC PFC boost converter. It ensures each converter has the same components and equivalent operating voltages. The results show AC boost converters below 500 W to have 2.9 to 4.2 times the loss of DC

Analysis and Design of a Hybrid Dickson Switched Capacitor Converter for Intermediate Bus Converter Applications

By 2020 it is predicted that 1/3 of all data will pass through the cloud. With society\u27s growing dependency on data, it is vital that data centers, the cloud\u27s physical house of content, operate with optimal energy performance to reduce operating costs.Unfortunately, today\u27s data centers are inefficient, both economically and environmentally. This has led to an increase in demand for energy-efficient servers. One opportunity for improved efficiency is in the power delivery architecture which delivers power from the grid to the motherboard. In this dissertation, the main focus is the intermediate bus converter (IBC), used for the intermediate conversion, typically 48-12V/5V, in server power supplies. The IBC requires compact design so that it can be placed as close to the load as possible to enable more space for computing power and high efficiency to reduce the need for external cooling. Most commonly used converter topologies today include expensive bulky magnetics hindering the converter\u27s power density. Furthermore, high output current of an IBC makes the efficiency very sensitive to any resistance, such as magnetic parasitic resistance or PCB trace resistance. In this work, analytical loss models are used to review the advantages and disadvantages of frequently used IBC topologies such as the phase-shifted full bridge and LLC. The Hybrid Dickson Switched Capacitor (HDSC) topology is also analyzed. The HDSC\u27s high step-down conversion ratio and low dependence on magnetics due to the reduced applied volt-seconds, provides a new opportunity for applications such as the intermediate bus converter. The HDSC designs the on-time of devices in order to achieve soft-charging between flying capacitors. Other advantages of the HDSC include low switch stress, small magnetics and adjustable duty cycle for voltage regulation. Challenges, such as minimizing parasitic inductance and resistance between flying capacitors, are addressed and recommendations for PCB layout are provided. In this paper, a 4:1 24-5V and 8:1 48-5V, 100W GaN-based HDSC is designed and tested. The influences of capacitor mismatch and limitations placed on soft-charging operation for the HDSC is also modeled. This analysis can be used as a tool for designers when selecting flying capacitors

New soft breakdown model for thin thermal SiO2 films under constant current stress

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STUDY OF RADIATION EFFECTS IN GAN-BASED DEVICES

Radiation tolerance of wide-bandgap Gallium Nitride (GaN) high-electron-mobility transistors (HEMT) has been studied, including X-ray-induced TID effects, heavy-ion-induced single event effects, and neutron-induced single event effects. Threshold voltage shift is observed in X-ray irradiation experiments, which recovers over time, indicating no permanent damage formed inside the device. Heavy-ion radiation effects in GaN HEMTs have been studied as a function of bias voltage, ion LET, radiation flux, and total fluence. A statistically significant amount of heavy-ion-induced gate dielectric degradation was observed, which consisted of hard breakdown and soft breakdown. Specific critical injection level experiments were designed and carried out to explore the gate dielectric degradation mechanism further. Transient device simulations determined ion-induced peak transient electric field and duration for a variety of ion LET, ion injection locations, and applied drain voltages. Results demonstrate that the peak transient electric fields exceed the breakdown strength of the gate dielectric, leading to dielectric defect generation and breakdown. GaN power device lifetime degradation caused by neutron irradiation is reported. Hundreds of devices were stressed in the off-state with various drain voltages from 75 V to 400 V while irradiated with a high-intensity neutron beam. Observing a statistically significant number of neutron-induced destructive single-event-effects (DSEEs) enabled an accurate extrapolation of terrestrial field failure rates. Nuclear event and electronic simulations were performed to model the effect of terrestrial neutron secondary ion-induced gate dielectric breakdown. Combined with the TCAD simulation results, we believe that heavy-ion-induced SEGR and neutron-induced SEGR share common physics mechanisms behind the failures. Overall, experimental data and simulation results provide evidence supporting the idea that both radiation-induced SBD and HBD are associated with defect-related conduction paths formed across the dielectric, in response to radiation-induced charge injection. A percolation theory-based dielectric degradation model is proposed, which explains the dielectric breakdown behaviors observed in heavy-ion irradiation experiments