Channel-Width Dependent Enhancement in Nanoscale Field Effect Transistor

We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional metal-oxide-semiconductor field-effect transistors in reverse source drain bias. Reduction of nanowire width below 200 nm leads to dramatic change in the threshold voltage. Due to increased surface-to-volume ratio, these devices show higher transconductance per unit width at smaller width. Our devices with nanoscale channel width demonstrate extreme sensitivity to surface field profile, and therefore can be used as logic elements in computation and as ultrasensitive sensors of surface-charge in chemical and biological species.Comment: 5 pages, 4 figures, two-column format. Related papers can be found at http://nano.bu.ed

Out-of-plane focusing grating couplers for silicon photonics integration with optical MRAM technology

We present the design methodology and experimental characterization of compact out-of-plane focusing grating couplers for integration with magnetoresistive random access memory technology. Focusing grating couplers have recently found attention as layer-couplers for photonic-electronic integration. The components we demonstrate are designed for a wavelength of 1550 nm, fabricated in a standard 220 nm SOI photonic platform and optimized given the fabrication restrictions for standard 193-nm UV lithography. For the first time, we extend the design based on the phase matching condition to a two-dimensional (2-D) grating design with two optical input ports. We further present the experimental characterization of the focusing behaviour by spatially probing the emitted beam with a tapered-and-lensed fiber and demonstrate the polarization controlling capabilities of the 2-D FGCs

Inverse design and implementation of a wavelength demultiplexing grating coupler

Nanophotonics has emerged as a powerful tool for manipulating light on chips. Almost all of today's devices, however, have been designed using slow and ineffective brute-force search methods, leading in many cases to limited device performance. In this article, we provide a complete demonstration of our recently proposed inverse design technique, wherein the user specifies design constraints in the form of target fields rather than a dielectric constant profile, and in particular we use this method to demonstrate a new demultiplexing grating. The novel grating, which has not been developed using conventional techniques, accepts a vertical-incident Gaussian beam from a free-space and separates O-band $(1300\mathrm{nm})$ and C-band $(1550\mathrm{nm})$ light into separate waveguides. This inverse design concept is simple and extendable to a broad class of highly compact devices including frequency splitters, mode converters, and spatial mode multiplexers.Comment: 17 pages, 4 figures, 1 table. A supplementary section describing the inverse-design algorithm in detail has been added, in addition to minor corrections and updated reference

Ring-resonator-based wavelength filters

Microring resonators (MR) represent a class of filters with characteristics very similar to those of Fabry–Perot filters. However, they offer the advantage that the injected and reflected signals are separated in individual waveguides, and in addition, their design does not require any facets or gratings and is thus particularly simple. MRs evolved from the fields of fibre optic ring resonators and micron scale droplets. Their inherently small size (with typical diameters in the range between several to tens of micrometres), their filter characteristics and their potential for being used in complex and flexible configurations make these devices particularly attractive for integrated optics or VLSI photonics applications.\ud MRs for filter applications, delay lines, as add/drop multiplexers, and modulators will be covered in detail in this chapter, while other applications such as in optical sensing, in spectroscopy or for coherent light generation (MR lasers) are outside the scope of this chapter.\ud This chapter focuses primarily on 4-port microrings, while 2-port devices will play a minor role here and are covered in more detail in Chap. 9. The present chapter starts with design considerations, the functional behaviour, and key characteristics of a single microring resonator and continues with the design of cascaded MRs allowing the implementation of higher order filters. Finally, complex devices like add-drop filters, tuneable dispersion compensators, all-optical wavelength converters, and tuneable cross-connects are treated.\u

Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors

We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017 cm-3, we find that a clear peak emerges in the conductance versus gate-voltage curves at low temperature. In addition, temperature dependence measurements reveal that the conductance obeys a variable-range-hopping law up to an unexpectedly high temperature of over 100 K. The symmetric dual-gate configuration of the silicon-on-insulator we use allows us to fully characterize the vertical-bias dependence of the conductance. Comparison to computer simulation of the phosphorus impurity band depth-profile reveals how the spatial variation of the impurity-band energy determines the hopping conduction in transistor structures. We conclude that the emergence of the conductance peak and the high-temperature variable-range hopping originate from the band bending and its change by the gate bias. Moreover, the peak structure is found to be strongly related to the density of states (DOS) of the phosphorus impurity band, suggesting the possibility of performing a novel spectroscopy for the DOS of phosphorus, the dopant of paramount importance in Si technology, through transport experiments.Comment: 9 figure