Frequency-domain nonlinear modeling approaches for power systems components - A comparison

Harmonic simulations play a key role in studying and predicting the impact of nonlinear devices on the power quality level of distribution grids. A frequency-domain approach allows higher computational efficiency, which has key importance as long as complex networks have to be studied. However, this requires proper frequency-domain behavioral models able to represent the nonlinear voltage-current relationship characterizing these devices. The Frequency Transfer Matrix (FTM) method is one of the most widespread frequency domain modeling approaches for power system applications. However, others suitable techniques have been developed in the last years, in particular the X-parameters approach, which comes from radiofrequency and microwave applications, and the simplified Volterra models under quasi-sinusoidal conditions, that have been specifically tailored for power system devices. In this paper FTM, X-parameters and simplified Volterra approaches are compared in representing the nonlinear voltage-current relationship of a bridge rectifier feeding an ohmic-capacitive dc load. Results show that the X-parameters model reaches good accuracy, which is slightly better than that achieved by the FTM and simplified Volterra models, but with a considerably larger set of coefficients. Simplified Volterra models under quasi-sinusoidal conditions allows an effective trade-off between accuracy and complexity

Metodologia Per la Caratterizzazione di amplificatori a basso rumore per UMTS

In questo lavoro si presenta una metodologia di progettazione elettronica a livello di sistema, affrontando il problema della caratterizzazione dello spazio di progetto dell' amplificatore a basso rumore costituente il primo stadio di un front end a conversione diretta per UMTS realizzato in tecnologia CMOS con lunghezza di canale .18u. La metodologia è sviluppata al fine di valutare in modo quantititativo le specifiche ottime di sistema per il front-end stesso e si basa sul concetto di Piattaforma Analogica, che prevede la costruzione di un modello di prestazioni per il blocco analogico basato su campionamento statistico di indici di prestazioni del blocco stesso, misurati tramite simulazione di dimensionamenti dei componenti attivi e passivi soddisfacenti un set di equazioni specifico della topologia circuitale. Gli indici di prestazioni vengono successivamente ulizzati per parametrizzare modelli comportamentali utilizzati nelle fasi di ottimizzazione a livello di sistema. Modelli comportamentali atti a rappresentare i sistemi RF sono stati pertanto studiati per ottimizzare la scelta delle metriche di prestazioni. L'ottimizzazione dei set di equazioni atti a selezionare le configurazione di interesse per il campionamento ha al tempo stesso richiesto l'approfondimento dei modelli di dispositivi attivi validi in tutte le regioni di funzionamento, e lo studio dettagliato della progettazione degli amplificatori a basso rumore basati su degenerazione induttiva. Inoltre, il problema della modellizzazione a livello di sistema degli effetti della comunicazione tra LNA e Mixer è stato affrontato proponendo e analizzando diverse soluzioni. Il lavoro ha permesso di condurre un'ottimizzazione del front-end UMTS, giungendo a specifiche ottime a livello di sistema per l'amplificatore stesso

When self-consistency makes a difference

Compound semiconductor power RF and microwave device modeling requires, in many cases, the use of selfconsistent electrothermal equivalent circuits. The slow thermal dynamics and the thermal nonlinearity should be accurately included in the model; otherwise, some response features subtly related to the detailed frequency behavior of the slow thermal dynamics would be inaccurately reproduced or completely distorted. In this contribution we show two examples, concerning current collapse in HBTs and modeling of IMPs in GaN HEMTs. Accurate thermal modeling is proved to be be made compatible with circuit-oriented CAD tools through a proper choice of system-level approximations; in the discussion we exploit a Wiener approach, but of course the strategy should be tailored to the specific problem under consideratio

Measurements, Models, Systems and Design

531 s.

Accurate pHEMT nonlinear modeling in the presence of low-frequency dispersive effects

Low-frequency (LF) dispersive phenomena due to device self-heating and/or the presence of "traps" (i.e., surface state densities and bulk spurious energy levels) must be taken into account in the large-signal dynamic modeling of III-V field-effect transistors when accurate performance predictions are pursued, since these effects cause important deviations between direct current (dc) and dynamic drain current characteristics. In this paper, a new model for the accurate characterization of these phenomena above their cutoff frequencies is presented, which is able to fully exploit, in the identification phase, large-signal current-voltage (I-V) measurements carried out under quasi-sinusoidal regime using a recently proposed setup. Detailed experimental results for model validation under LF small- and large-signal operating conditions are provided. Furthermore, the I-V model proposed has been embedded into a microwave large-signal pseudomorphic high electron-mobility transistor (pHEMT) model in order to point out the strong influence of LF modeling on the degree of accuracy achievable under millimeter-wave nonlinear operation. Large-signal experimental validation at microwave frequencies is provided for the model proposed, by showing the excellent intermodulation distortion (IMD) predictions obtained with different loads despite the very low power level of IMD products involved. Details on the millimeter-wave IMD measurement setup are also provided. Finally, IMD measurements and simulations on a Ka-band highly linear power amplifier, designed by Ericsson using the Triquint GaAs 0.25-/spl mu/m pHEMT process, are shown for further model validation

Identification of unsteady aerodynamics and aeroelastic integro-differential systems

The problem of estimating integro-differential models based on test or simulation data is dealt with. The identification techniques proposed for estimating parameters in models described by differential equations need to be considerably extended to deal with the integral terms. Conditions under which the integral terms may be approximated by algebraic values are discussed. The integro-differential models discussed are related to indicial models proposed by aerodynamicists to describe unsteady flow