23,746 research outputs found
High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism
The readout of semiconductor spin qubits based on spin blockade is fast but
suffers from a small charge signal. Previous work suggested large benefits from
additional charge mapping processes, however uncertainties remain about the
underlying mechanisms and achievable fidelity. In this work, we study the
single-shot fidelity and limiting mechanisms for two variations of an enhanced
latching readout. We achieve average single-shot readout fidelities > 99.3% and
> 99.86% for the conventional and enhanced readout respectively, the latter
being the highest to date for spin blockade. The signal amplitude is enhanced
to a full one-electron signal while preserving the readout speed. Furthermore,
layout constraints are relaxed because the charge sensor signal is no longer
dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole.
Silicon donor-quantum-dot qubits are used for this study, for which the dipole
insensitivity substantially relaxes donor placement requirements. One of the
readout variations also benefits from a parametric lifetime enhancement by
replacing the spin-relaxation process with a charge-metastable one. This
provides opportunities to further increase the fidelity. The relaxation
mechanisms in the different regimes are investigated. This work demonstrates a
readout that is fast, has one-electron signal and results in higher fidelity.
It further predicts that going beyond 99.9% fidelity in a few microseconds of
measurement time is within reach.Comment: Supplementary information is included with the pape
Semiconductor optical amplifiers: performance and applications in optical packet switching [Invited]
Semiconductor optical amplifiers (SOAs) are a versatile core technology and the basis for the implementation of a number of key functionalities central to the evolution of highly wavelength-agile all-optical networks. We present an overview of the state of the art of SOAs and summarize a range of applications such as power boosters, preamplifiers, optical linear (gain-clamped) amplifiers, optical gates, and modules based on the hybrid integration of SOAs to yield high-level functionalities such as all-optical wavelength converters/regenerators and small space switching matrices. Their use in a number of proposed optical packet switching situations is also highlighted
Strong interfacial exchange field in the graphene/EuS heterostructure
Exploiting 2D materials for spintronic applications can potentially realize
next-generation devices featuring low-power consumption and quantum operation
capability. The magnetic exchange field (MEF) induced by an adjacent magnetic
insulator enables efficient control of local spin generation and spin
modulation in 2D devices without compromising the delicate material structures.
Using graphene as a prototypical 2D system, we demonstrate that its coupling to
the model magnetic insulator (EuS) produces a substantial MEF (> 14 T) with
potential to reach hundreds of Tesla, which leads to orders-of-magnitude
enhancement in the spin signal originated from Zeeman spin-Hall effect.
Furthermore, the new ferromagnetic ground state of Dirac electrons resulting
from the strong MEF may give rise to quantized spin-polarized edge transport.
The MEF effect shown in our graphene/EuS devices therefore provides a key
functionality for future spin logic and memory devices based on emerging 2D
materials in classical and quantum information processing
Remote capacitive sensing in two-dimension quantum-dot arrays
We investigate gate-defined quantum dots in silicon on insulator nanowire
field-effect transistors fabricated using a foundry-compatible fully-depleted
silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the
silicon nanowire naturally produces a bilinear array of quantum
dots along a single nanowire. We begin by studying the capacitive coupling of
quantum dots within such a 22 array, and then show how such couplings
can be extended across two parallel silicon nanowires coupled together by
shared, electrically isolated, 'floating' electrodes. With one quantum dot
operating as a single-electron-box sensor, the floating gate serves to enhance
the charge sensitivity range, enabling it to detect charge state transitions in
a separate silicon nanowire. By comparing measurements from multiple devices we
illustrate the impact of the floating gate by quantifying both the charge
sensitivity decay as a function of dot-sensor separation and configuration
within the dual-nanowire structure.Comment: 9 pages, 3 figures, 35 cites and supplementar
Enhanced charge detection of spin qubit readout via an intermediate state
We employ an intermediate excited charge state of a lateral quantum dot
device to increase the charge detection contrast during the qubit state readout
procedure, allowing us to increase the visibility of coherent qubit
oscillations. This approach amplifies the coherent oscillation magnitude but
has no effect on the detector noise resulting in an increase in the signal to
noise ratio. In this letter we apply this scheme to demonstrate a significant
enhancement of the fringe contrast of coherent Landau-Zener-Stuckleberg
oscillations between singlet S and triplet T+ two-spin states.Comment: 3 pages, 3 figure
A Fully-Integrated Quad-Band GSM/GPRS CMOS Power Amplifier
Concentric distributed active transformers (DAT) are used to implement a fully-integrated quad-band power amplifier (PA) in a standard 130 nm CMOS process. The DAT enables the power amplifier to integrate the input and output matching networks on the same silicon die. The PA integrates on-chip closed-loop power control and operates under supply voltages from 2.9 V to 5.5 V in a standard micro-lead-frame package. It shows no oscillations, degradation, or failures for over 2000 hours of operation with a supply of 6 V at 135Ā° under a VSWR of 15:1 at all phase angles and has also been tested for more than 2 million device-hours (with ongoing reliability monitoring) without a single failure under nominal operation conditions. It produces up to +35 dBm of RF power with power-added efficiency of 51%
Design considerations for a monolithic, GaAs, dual-mode, QPSK/QASK, high-throughput rate transceiver
A monolithic, GaAs, dual mode, quadrature amplitude shift keying and quadrature phase shift keying transceiver with one and two billion bits per second data rate is being considered to achieve a low power, small and ultra high speed communication system for satellite as well as terrestrial purposes. Recent GaAs integrated circuit achievements are surveyed and their constituent device types are evaluated. Design considerations, on an elemental level, of the entire modem are further included for monolithic realization with practical fabrication techniques. Numerous device types, with practical monolithic compatability, are used in the design of functional blocks with sufficient performances for realization of the transceiver
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