Form Factor Improvement of Smart-Pixels for Vision Sensors through 3-D Vertically- Integrated Technologies

While conventional CMOS active pixel sensors embed only the circuitry required for photo-detection, pixel addressing and voltage buffering, smart pixels incorporate also circuitry for data processing, data storage and control of data interchange. This additional circuitry enables data processing be realized concurrently with the acquisition of images which is instrumental to reduce the number of data needed to carry to information contained into images. This way, more efficient vision systems can be built at the cost of larger pixel pitch. Vertically-integrated 3D technologies enable to keep the advnatges of smart pixels while improving the form factor of smart pixels.Office of Naval Research N000141110312Ministerio de Ciencia e Innovación IPT-2011-1625-43000

Digital implementation of the cellular sensor-computers

Two different kinds of cellular sensor-processor architectures are used nowadays in various applications. The first is the traditional sensor-processor architecture, where the sensor and the processor arrays are mapped into each other. The second is the foveal architecture, in which a small active fovea is navigating in a large sensor array. This second architecture is introduced and compared here. Both of these architectures can be implemented with analog and digital processor arrays. The efficiency of the different implementation types, depending on the used CMOS technology, is analyzed. It turned out, that the finer the technology is, the better to use digital implementation rather than analog

CMOS Vision Sensors: Embedding Computer Vision at Imaging Front-Ends

CMOS Image Sensors (CIS) are key for imaging technol-ogies. These chips are conceived for capturing opticalscenes focused on their surface, and for delivering elec-trical images, commonly in digital format. CISs may incor-porate intelligence; however, their smartness basicallyconcerns calibration, error correction and other similartasks. The term CVISs (CMOS VIsion Sensors) definesother class of sensor front-ends which are aimed at per-forming vision tasks right at the focal plane. They havebeen running under names such as computational imagesensors, vision sensors and silicon retinas, among others. CVIS and CISs are similar regarding physical imple-mentation. However, while inputs of both CIS and CVISare images captured by photo-sensors placed at thefocal-plane, CVISs primary outputs may not be imagesbut either image features or even decisions based on thespatial-temporal analysis of the scenes. We may hencestate that CVISs are more “intelligent” than CISs as theyfocus on information instead of on raw data. Actually,CVIS architectures capable of extracting and interpretingthe information contained in images, and prompting reac-tion commands thereof, have been explored for years inacademia, and industrial applications are recently ramp-ing up.One of the challenges of CVISs architects is incorporat-ing computer vision concepts into the design flow. Theendeavor is ambitious because imaging and computervision communities are rather disjoint groups talking dif-ferent languages. The Cellular Nonlinear Network Univer-sal Machine (CNNUM) paradigm, proposed by Profs.Chua and Roska, defined an adequate framework forsuch conciliation as it is particularly well suited for hard-ware-software co-design [1]-[4]. This paper overviewsCVISs chips that were conceived and prototyped at IMSEVision Lab over the past twenty years. Some of them fitthe CNNUM paradigm while others are tangential to it. Allthem employ per-pixel mixed-signal processing circuitryto achieve sensor-processing concurrency in the quest offast operation with reduced energy budget.Junta de Andalucía TIC 2012-2338Ministerio de Economía y Competitividad TEC 2015-66878-C3-1-R y TEC 2015-66878-C3-3-

Space optical instruments optimisation thanks to CMOS image sensor technology

Today, both CCD and CMOS sensors can be envisaged for nearly all visible sensors and instruments designed for space needs. Indeed, detectors built with both technologies allow excellent electro-optics performances to be reached, the selection of the most adequate device being driven by their functional and technological features and limits. The first part of the paper presents electro-optics characterisation results of CMOS Image Sensors (CIS) built with an optimised CMOS process, demonstrating the large improvements of CIS electro-optics performances. The second part reviews the advantages of CMOS technology for space applications, illustrated by examples of CIS developments performed by EADS Astrium and Supaéro/CIMI for current and short term coming space programs

R&D Paths of Pixel Detectors for Vertex Tracking and Radiation Imaging

This report reviews current trends in the R&D of semiconductor pixellated sensors for vertex tracking and radiation imaging. It identifies requirements of future HEP experiments at colliders, needed technological breakthroughs and highlights the relation to radiation detection and imaging applications in other fields of science.Comment: 17 pages, 2 figures, submitted to the European Strategy Preparatory Grou

CMOS-3D smart imager architectures for feature detection

This paper reports a multi-layered smart image sensor architecture for feature extraction based on detection of interest points. The architecture is conceived for 3-D integrated circuit technologies consisting of two layers (tiers) plus memory. The top tier includes sensing and processing circuitry aimed to perform Gaussian filtering and generate Gaussian pyramids in fully concurrent way. The circuitry in this tier operates in mixed-signal domain. It embeds in-pixel correlated double sampling, a switched-capacitor network for Gaussian pyramid generation, analog memories and a comparator for in-pixel analog-to-digital conversion. This tier can be further split into two for improved resolution; one containing the sensors and another containing a capacitor per sensor plus the mixed-signal processing circuitry. Regarding the bottom tier, it embeds digital circuitry entitled for the calculation of Harris, Hessian, and difference-of-Gaussian detectors. The overall system can hence be configured by the user to detect interest points by using the algorithm out of these three better suited to practical applications. The paper describes the different kind of algorithms featured and the circuitry employed at top and bottom tiers. The Gaussian pyramid is implemented with a switched-capacitor network in less than 50 μs, outperforming more conventional solutions.Xunta de Galicia 10PXIB206037PRMinisterio de Ciencia e Innovación TEC2009-12686, IPT-2011-1625-430000Office of Naval Research N00014111031

On evolution of CMOS image sensors

CMOS Image Sensors have become the principal technology in majority of digital cameras. They started replacing the film and Charge Coupled Devices in the last decade with the promise of lower cost, lower power requirement, higher integration and the potential of focal plane processing. However, the principal factor behind their success has been the ability to utilise the shrinkage in CMOS technology to make smaller pixels, and thereby have more resolution without increasing the cost. With the market of image sensors exploding courtesy their inte- gration with communication and computation devices, technology developers improved the CMOS processes to have better optical performance. Nevertheless, the promises of focal plane processing as well as on-chip integration have not been fulfilled. The market is still being pushed by the desire of having higher number of pixels and better image quality, however, differentiation is being difficult for any image sensor manufacturer. In the paper, we will explore potential disruptive growth directions for CMOS Image sensors and ways to achieve the same

Advances on CMOS image sensors

This paper offers an introduction to the technological advances of image sensors designed using complementary metal–oxide–semiconductor (CMOS) processes along the last decades. We review some of those technological advances and examine potential disruptive growth directions for CMOS image sensors and proposed ways to achieve them. Those advances include breakthroughs on image quality such as resolution, capture speed, light sensitivity and color detection and advances on the computational imaging. The current trend is to push the innovation efforts even further as the market requires higher resolution, higher speed, lower power consumption and, mainly, lower cost sensors. Although CMOS image sensors are currently used in several different applications from consumer to defense to medical diagnosis, product differentiation is becoming both a requirement and a difficult goal for any image sensor manufacturer. The unique properties of CMOS process allows the integration of several signal processing techniques and are driving the impressive advancement of the computational imaging. With this paper, we offer a very comprehensive review of methods, techniques, designs and fabrication of CMOS image sensors that have impacted or might will impact the images sensor applications and markets