Assessment of Durable SiC JFET Technology for +600 C to -125 C Integrated Circuit Operation

Electrical characteristics and circuit design considerations for prototype 6H-SiC JFET integrated circuits (ICs) operating over the broad temperature range of -125 C to +600 C are described. Strategic implementation of circuits with transistors and resistors in the same 6H-SiC n-channel layer enabled ICs with nearly temperature-independent functionality to be achieved. The frequency performance of the circuits declined at temperatures increasingly below or above room temperature, roughly corresponding to the change in 6H-SiC n-channel resistance arising from incomplete carrier ionization at low temperature and decreased electron mobility at high temperature. In addition to very broad temperature functionality, these simple digital and analog demonstration integrated circuits successfully operated with little change in functional characteristics over the course of thousands of hours at 500 C before experiencing interconnect-related failures. With appropriate further development, these initial results establish a new technology foundation for realizing durable 500 C ICs for combustion engine sensing and control, deep-well drilling, and other harsh-environment applications

Silicon carbide technology for extreme environments

PhD ThesisWith mankind’s ever increasing curiosity to explore the unknown, including a variety of hostile environments where we cannot tread, there exists a need for machines to do work on our behalf. For applications in the most extreme environments and applications silicon based electronics cannot function, and there is a requirement for circuits and sensors to be built from wide band gap materials capable of operation in these domains. This work addresses the initial development of silicon carbide circuits to monitor conditions and transmit information from such hostile environments. The characterisation, simulation and implementation of silicon carbide based circuits utilising proprietary high temperature passives is explored. Silicon carbide is a wide band gap semiconductor material with highly suitable properties for high-power, high frequency and high temperature applications. The bandgap varies depending on polytype, but the most commonly used polytype 4H, has a value of 3.265 eV at room temperature, which reduces as the thermal ionization of electrons from the valence band to the conduction band increases, allowing operation in ambient up to 600°C. Whilst silicon carbide allows for the growth of a native oxide, the quality has limitations and therefore junction field effect transistors (JFETs) have been utilised as the switch in this work. The characteristics of JFET devices are similar to those of early thermionic valve technology and their use in circuits is well known. In conjunction with JFETs, Schottky barrier diodes (SBDs) have been used as both varactors and rectifiers. Simulation models for high temperature components have been created through their characterisation of their electrical parameters at elevated temperatures. The JFETs were characterised at temperatures up to 573K, and values for TO V , β , λ , IS , RS and junction capacitances were extracted and then used to mathematically describe the operation of circuits using SPICE. The transconductance of SiC JFETs at high temperatures has been shown to decrease quadratically indicating a strong dependence upon carrier mobility in the channel. The channel resistance also decreased quadratically as a direct result of both electric field and temperature enhanced trap emission. The JFETs were tested to be operational up to 775K, where they failed due to delamination of an external passivation layer. ii Schottky diodes were characterised up to 573K, across the temperature range and values for ideality factor, capacitance, series resistance and forward voltage drop were extracted to mathematically model the devices. The series resistance of a SiC SBD exhibited a quadratic relationship with temperature indicating that it is dominated by optical phonon scattering of charge carriers. The observed deviation from a temperature independent ideality factor is due to the recombination of carriers in the depletion region affected by both traps and the formation of an interfacial layer at the SiC/metal interface. To compliment the silicon carbide active devices utilised in this work, high temperature passive devices and packaging/circuit boards were developed. Both HfO2 and AlN materials were investigated for use as potential high temperature capacitor dielectrics in metal-insulator-metal (MIM) capacitor structures. The different thicknesses of HfO2 (60nm and 90nm) and 300nm for AlN and the relevance to fabrication techniques are examined and their effective capacitor behaviour at high temperature explored. The HfO2 based capacitor structures exhibited high levels of leakage current at temperatures above 100°C. Along with elevated leakage when subjected to higher electric fields. This current leakage is due to the thin dielectric and high defect density and essentially turns the capacitors into high value resistors in the order of MΩ. This renders the devices unsuitable as capacitors in hostile environments at the scales tested. To address this issue AlN capacitors with a greater dielectric film thickness were fabricated with reduced leakage currents in comparison even at an electric field of 50MV/cm at 600K. The work demonstrated the world’s first high temperature wireless sensor node powered using energy harvesting technology, capable of operation at 573K. The module demonstrated the world’s first amplitude modulation (AM) and frequency modulation (FM) communication techniques at high temperature. It also demonstrated a novel high temperature self oscillating boost converter cable of boosting voltages from a thermoelectric generator also operating at this temperature. The AM oscillator operated at a maximum temperature of 553K and at a frequency of 19.4MHz with a signal amplitude 65dB above background noise. Realised from JFETs and HfO2 capacitors, modulation of the output signal was achieved by varying the load resistance by use of a second SiC JFET. By applying a negative signal voltage of between -2.5 and -3V, a 50% reduction in the signal amplitude and therefore Amplitude Modulation was achieved by modulating the power within the oscillator through the use of this secondary JFET. Temperature drift in the characteristics were also observed, iii with a decrease in oscillation frequency of almost 200 kHz when the temperature changed from 300K to 573K. This decrease is due to the increase in capacitance density of the HfO2 MIM capacitors and increasing junction capacitances of the JFET used as the amplifier within the oscillator circuit. Direct frequency modulation of a SiC Voltage Controlled Oscillator was demonstrated at a temperature of 573K with a oscillation frequency of 17MHz. Realised from an SiC JFET, AlN capacitors and a SiC SBD used as a varactor. It was possible to vary the frequency of oscillations by 100 kHz with an input signal no greater than 1.5V being applied to the SiC SBD. The effects of temperature drift were more dramatic in comparison to the AM circuit at 400 kHz over the entire temperature range, a result of the properties of the AlN film which causes the capacitors to increase in capacitance density by 10%. A novel self oscillating boost converter was commissioned using a counter wound transformer on high temperature ferrite, a SiC JFET and a SiC SBD. Based upon the operation of a free running blocking oscillator, oscillatory behaviour is a result of the electric and magnetic variations in the winding of the transformer and the amplification characteristics of a JFET. It demonstrated the ability to boost an input voltage of 1.3 volts to 3.9 volts at 573K and exhibited an efficiency of 30% at room temperature. The frequency of operation was highly dependent upon the input voltage due to the increased current flow through the primary coil portion of the transformer and the ambient temperature causing an increase in permeability of the ferrite, thus altering the inductance of both primary and secondary windings. However due its simplicity and its ability to boost the input voltage by 250% meant it was capable of powering the transmitters and in conjunction with a Themoelectric Generator so formed the basis for a self powered high temperature silicon carbide sensor node. The demonstration of these high temperature circuits provide the initial stages of being able to produce a high temperature wireless sensor node capable of operation in hostile environments. Utilising the self oscillating boost converter and a high temperature Thermoelectric Generator these prototype circuits were showed the ability to harvest energy from the high temperature ambient and power the silicon carbide circuitry. Along with appropriate sensor technology it demonstrated the feasibility of being able to monitor and transmit information from hazardous locations which is currently unachievable

A High-Temperature, High-Voltage SOI Gate Driver Integrated Circuit with High Drive Current for Silicon Carbide Power Switches

High-temperature integrated circuit (IC) design is one of the new frontiers in microelectronics that can significantly improve the performance of the electrical systems in extreme environment applications, including automotive, aerospace, well-logging, geothermal, and nuclear. Power modules (DC-DC converters, inverters, etc.) are key components in these electrical systems. Power-to-volume and power-to-weight ratios of these modules can be significantly improved by employing silicon carbide (SiC) based power switches which are capable of operating at much higher temperature than silicon (Si) and gallium arsenide (GaAs) based conventional devices. For successful realization of such high-temperature power electronic circuits, associated control electronics also need to perform at high temperature. In any power converter, gate driver circuit performs as the interface between a low-power microcontroller and the semiconductor power switches. This dissertation presents design, implementation, and measurement results of a silicon-on-insulator (SOI) based high-temperature (\u3e200 _C) and high-voltage (\u3e30 V) universal gate driver integrated circuit with high drive current (\u3e3 A) for SiC power switches. This mixed signal IC has primarily been designed for automotive applications where the under-hood temperature can reach 200 _C. Prototype driver circuits have been designed and implemented in a Bipolar-CMOS- DMOS (BCD) on SOI process and have been successfully tested up to 200 _C ambient temperature driving SiC switches (MOSFET and JFET) without any heat sink and thermal management. This circuit can generate 30V peak-to-peak gate drive signal and can source and sink 3A peak drive current. Temperature compensating and temperature independent design techniques are employed to design the critical functional units like dead-time controller and level shifters in the driver circuit. Chip-level layout techniques are employed to enhance the reliability of the circuit at high temperature. High-temperature test boards have been developed to test the prototype ICs. An ultra low power on-chip temperature sensor circuit has also been designed and integrated into the gate-driver die to safeguard the driver circuit against excessive die temperature (_ 220 _C). This new temperature monitoring approach utilizes a reverse biased p-n junction diode as the temperature sensing element. Power consumption of this sensor circuit is less than 10 uW at 200 _C

The Development and Packaging of a High-Density, Three-Phase, Silicon Carbide (SiC) Motor Drive

Technology advances within the power electronics field are resulting in systems characterized by higher operating efficiencies, reduced footprint, minimal form factor, and decreasing mass. In particular, these attributes and characteristics are being inserted into numerous consumer applications, such as light-emitting diode lighting, compact fluorescent lighting, smart phones, and tablet PCs, to industrial applications that include hybrid, electric, and plug-in electric vehicles and more electric aircraft. To achieve the increase in energy efficiency and significant reduction in size and mass of these systems, power semiconductor device manufacturers are developing silicon carbide (SiC) semiconductor technology. In this dissertation, the author discusses the design, development, packaging, and fabrication of the world\u27s first multichip power module (MCPM) that integrates SiC power transistors with silicon-on-insulator (SOI) integrated circuits. The fabricated MCPM prototype is a 4 kW, three-phase inverter that operates at temperatures in excess of 250 °C. The integration of high-temperature metal-oxide semiconductor (HTMOS) SOI bare die control components with SiC power JFET bare die into a single compact module are presented in this work. The high-temperature operation of SiC switches allows for increased power density over silicon electronics by an order of magnitude, leading to highly miniaturized power converters. This dissertation is organized into a compilation of publications written by the author over the course of his Ph.D. work. The work presented throughout these publications covers the challenges associated with power electronics miniaturization and packaging including high-power density, high-temperature, and high-efficiency operation of the power electronic system under study

シリコンカーバイドパワーMOSFETsの破壊耐量ならびにそのメカニズムに関する研究

筑波大学 (University of Tsukuba)201

Electrical Characterization of 4H-SiC JFET Wafer: DC Parameter Variations for Extreme Temperature IC Design

This work reports DC electrical characterization of a 76 mm diameter 4H-SiC JFET test wafer fabricated as part of NASA's on-going efforts to realize medium-scale ICs with prolonged and stable circuit operation at temperatures as high as 500 degC. In particular, these measurements provide quantitative parameter ranges for use in JFET IC design and simulation. Larger than expected parameter variations were observed both as a function of position across the wafer as well as a function of ambient testing temperature from 23 degC to 500 degC

Experimental and analytical performance evaluation of SiC power devices in the matrix converter

With the commercial availability of SiC power devices, their acceptance is expected grows in consideration to the excellent low switching loss, high temperature operation and high voltage rating capabilities of these devices. This paper presents the comparative performance evaluation of different SiC power devices in matrix converter at various temperatures and switching frequencies. To this end, firstly, gate or base drive circuits for Normally-off SiC JFET, SiC MOSFET and SiC BJT which taking into account the special demands for these devices are presented. Then, three 2-phase to 1-phase matrix converters are built with different SiC power devices to measure the switching waveforms and power losses for them at different temperatures and switching frequencies. Based on the measured data, three different SiC power devices are compared in terms of switching times, conduction and switching losses and efficiency at different temperatures and switching frequencies. Furthermore, a theoretical investigation of the power losses of three phase matrix converter with Normally-off SiC JFET, SiC MOSFET, SiC BJT and Si IGBT is described. The power losses estimation indicates that a 7 KW matrix converter would potentially have an efficiency of approximately 96% in high switching frequency if equipped with SiC devices

Measuring Terminal Capacitance and Its Voltage Dependency for High-Voltage Power Devices

The switching behavior of semiconductor devices responds to charge/discharge phenomenon of terminal capacitance in the device. The differential capacitance in a semiconductor device varies with the applied voltage in accordance with the depleted region thickness. This study develops a C - V characterization system for high-voltage power transistors (e.g., MOSFET, insulated gate bipolar transistor, and JFET), which realizes the selective measurement of a specified capacitance from among several capacitances integrated in one device. Three capacitances between terminals are evaluated to specify device characteristics-the capacitance for gate-source, gate-drain, and drain-source. The input, output, and reverse transfer capacitance are also evaluated to assess the switching behavior of the power transistor in the circuit. Thus, this paper discusses the five specifications of a C -V characterization system and its measurement results. Moreover, the developed C -V characterization system enables measurement of the transistor capacitances from its blocking condition to the conducting condition with a varying gate bias voltage. The measured C -V characteristics show intricate changes in the low-bias-voltage region, which reflect the device structure. The monotonic capacitance change in the high-voltage region is attributable to the expansion of the depletion region in the drift region. These results help to understand the dynamic behavior of high-power devices during switching operation