Self-sustained current oscillations in the kinetic theory of semiconductor superlattices

We present the first numerical solutions of a kinetic theory description of self-sustained current oscillations in n-doped semiconductor superlattices. The governing equation is a single-miniband Boltzmann-Poisson transport equation with a BGK (Bhatnagar-Gross-Krook) collision term. Appropriate boundary conditions for the distribution function describe electron injection in the contact regions. These conditions seamlessly become Ohm's law at the injecting contact and the zero charge boundary condition at the receiving contact when integrated over the wave vector. The time-dependent model is numerically solved for the distribution function by using the deterministic Weighted Particle Method. Numerical simulations are used to ascertain the convergence of the method. The numerical results confirm the validity of the Chapman-Enskog perturbation method used previously to derive generalized drift-diffusion equations for high electric fields because they agree very well with numerical solutions thereof.Comment: 26 pages, 16 figures, to appear in J. Comput. Phy

Nonequilibrium free energy, H theorem and self-sustained oscillations for Boltzmann-BGK descriptions of semiconductor superlattices

Semiconductor superlattices (SL) may be described by a Boltzmann-Poisson kinetic equation with a Bhatnagar-Gross-Krook (BGK) collision term which preserves charge, but not momentum or energy. Under appropriate boundary and voltage bias conditions, these equations exhibit time-periodic oscillations of the current caused by repeated nucleation and motion of charge dipole waves. Despite this clear nonequilibrium behavior, if we `close' the system by attaching insulated contacts to the superlattice and keeping its voltage bias to zero volts, we can prove the H theorem, namely that a free energy $\Phi(t)$ of the kinetic equations is a Lyapunov functional ($\Phi\geq 0$, $d\Phi/dt\leq 0$). Numerical simulations confirm that the free energy decays to its equilibrium value for a closed SL, whereas for an `open' SL under appropriate dc voltage bias and contact conductivity $\Phi(t)$ oscillates in time with the same frequency as the current self-sustained oscillations.Comment: 15 pages, 3 figures, minor revision of latex fil

Wigner-Poisson and nonlocal drift-diffusion model equations for semiconductor superlattices

A Wigner-Poisson kinetic equation describing charge transport in doped semiconductor superlattices is proposed. Electrons are supposed to occupy the lowest miniband, exchange of lateral momentum is ignored and the electron-electron interaction is treated in the Hartree approximation. There are elastic collisions with impurities and inelastic collisions with phonons, imperfections, etc. The latter are described by a modified BGK (Bhatnagar-Gross-Krook) collision model that allows for energy dissipation while yielding charge continuity. In the hyperbolic limit, nonlocal drift-diffusion equations are derived systematically from the kinetic Wigner-Poisson-BGK system by means of the Chapman-Enskog method. The nonlocality of the original quantum kinetic model equations implies that the derived drift-diffusion equations contain spatial averages over one or more superlattice periods. Numerical solutions of the latter equations show self-sustained oscillations of the current through a voltage biased superlattice, in agreement with known experiments.Comment: 20 pages, 1 figure, published as M3AS 15, 1253 (2005) with correction

Theory of charge fluctuations and domain relocation times in semiconductor superlattices

Shot noise affects differently the nonlinear electron transport in semiconductor superlattices depending on the strength of the coupling among the superlattice quantum wells. Strongly coupled superlattices can be described by a miniband Boltzmann-Langevin equation from which a stochastic drift-diffusion equation is derived by means of a consistent Chapman-Enskog method. Similarly, shot noise in weakly coupled, highly doped semiconductor superlattices is described by a stochastic discrete drift-diffusion model. The current-voltage characteristics of the corresponding deterministic model consist of a number of stable branches corresponding to electric field profiles displaying two domains separated by a domain wall. If the initial state corresponds to a voltage on the middle of a stable branch and is suddenly switched to a final voltage corresponding to the next branch, the domains relocate after a certain delay time, called relocation time. The possible scalings of this mean relocation time are discussed using bifurcation theory and the classical results for escape of a Brownian particle from a potential well.Comment: 14 pages, 2 figure

Two mini-band model for self-sustained oscillations of the current through resonant tunneling semiconductor superlattices

A two miniband model for electron transport in semiconductor superlattices that includes scattering and interminiband tunnelling is proposed. The model is formulated in terms of Wigner functions in a basis spanned by Pauli matrices, includes electron-electron scattering in the Hartree approximation and modified Bhatnagar-Gross-Krook collision tems. For strong applied fields, balance equations for the electric field and the miniband populations are derived using a Chapman-Enskog perturbation technique. These equations are then solved numerically for a dc voltage biased superlattice. Results include self-sustained current oscillations due to repeated nucleation of electric field pulses at the injecting contact region and their motion towards the collector. Numerical reconstruction of the Wigner functions shows that the miniband with higher energy is empty during most of the oscillation period: it becomes populated only when the local electric field (corresponding to the passing pulse) is sufficiently large to trigger resonant tunneling.Comment: 26 pages, 3 figures, to appear in Phys. Rev.

Generalized drift-diffusion model for miniband superlattices

A drift-diffusion model of miniband transport in strongly coupled superlattices is derived from the single-miniband Boltzmann-Poisson transport equation with a BGK (Bhatnagar-Gross-Krook) collision term. We use a consistent Chapman-Enskog method to analyze the hyperbolic limit, at which collision and electric field terms dominate the other terms in the Boltzmann equation. The reduced equation is of the drift-diffusion type, but it includes additional terms, and diffusion and drift do not obey the Einstein relation except in the limit of high temperatures.Comment: 4 pages, 3 figures, double-column revtex. To appear as RC in PR

Semiconductor Superlattices: A model system for nonlinear transport

Electric transport in semiconductor superlattices is dominated by pronounced negative differential conductivity. In this report the standard transport theories for superlattices, i.e. miniband conduction, Wannier-Stark-hopping, and sequential tunneling, are reviewed in detail. Their relation to each other is clarified by a comparison with a quantum transport model based on nonequilibrium Green functions. It is demonstrated how the occurrence of negative differential conductivity causes inhomogeneous electric field distributions, yielding either a characteristic sawtooth shape of the current-voltage characteristic or self-sustained current oscillations. An additional ac-voltage in the THz range is included in the theory as well. The results display absolute negative conductance, photon-assisted tunneling, the possibility of gain, and a negative tunneling capacitance.Comment: 121 pages, figures included, to appear in Physics Reports (2001

Uncovering spatio-temporal patterns in semiconductor superlattices by efficient data processing tools

Time periodic patterns in a semiconductor superlattice, relevant to microwave generation, are obtained upon numerical integration of a known set of drift-diffusion equations. The associated spatiotemporal transport mechanisms are uncovered by applying (to the computed data) two recent data processing tools, known as the higher order dynamic mode decomposition and the spatiotemporal Koopman decomposition. Outcomes include a clear identification of the asymptotic self-sustained oscillations of the current density (isolated from the transient dynamics) and an accurate description of the electric field traveling pulse in terms of its dispersion diagram. In addition, a preliminary version of a data-driven reduced order model is constructed, which allows for extremely fast online simulations of the system response over a range of different configurations.The authors are indebted to two anonymous referees for some useful comments and suggestions on an earlier version of the paper. This work has been supported by the Fondo Europeo de Desarrollo Regional Ministerio de Ciencia, Innovación y Universidades–Agencia Estatal de Investigación, under Grants No. TRA2016-75075-R, No. MTM2017-84446-C2-2-R, and No. PID2020-112796RB-C22, and by the Madrid Government (Comunidad de Madrid-Spain) under the Multiannual Agreement with UC3M in the line of Excellence of University Professors (EPUC3M23) and in the context of the V PRICIT (Regional Programme of Research and Technological Innovation)