51 research outputs found

    Design of Integrated Mixer for 5G Radio Transceiver

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    The increased demand of high data rate, low latency and wider bandwidth is pushing the wireless communication towards higher frequencies. 3GPP (third generation partnership project) allocated NR (new radio) FR2 (frequency range 2) n257 (26.5 - 29.5 GHz) and n258 (24.25 - 27.5 GHz) bands for high-speed communication. It is challenging to achieve high linearity at higher frequencies with low supply voltage and smaller size devices. This thesis presents design, implementation and simulation results of integrated downconversion mixer for modular 5G radio transceiver. The first stage downconversion mixer, implemented in GF FDSOI 22 nm process will be used in super-heterodyne double downconversion transceiver, operates at 28 GHz input frequency and provides 6-7 GHz intermediate frequency (IF). The pre-layout and post-layout simulation results of double-balanced mixer topologies optimized for high linearity are compared in terms of conversion gain (CG), input third-order intercept point (IIP3), double sideband (DSB) noise figure (NF), LO-to-IF leakage,and dc power consumption. The mixer topologies, including Gilbert cell and variants of Gilbert cell with resistive and inductive degeneration, and mixer with transformer input, show trade-off between conversion gain, linearity, dc power consumption, and area. Under 0.8-V supply voltage, the transformer input mixer achieves highest IIP3 of +16.34 dBm while dc power consumption including LO buffer is 5.7 mW and NFdsb is 13.7 dB

    Design and characterization of downconversion mixers and the on-chip calibration techniques for monolithic direct conversion radio receivers

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    This thesis consists of eight publications and an overview of the research topic, which is also a summary of the work. The research described in this thesis is focused on the design of downconversion mixers and direct conversion radio receivers for UTRA/FDD WCDMA and GSM standards. The main interest of the work is in the 1-3 GHz frequency range and in the Silicon and Silicon-Germanium BiCMOS technologies. The RF front-end, and especially the mixer, limits the performance of direct conversion architecture. The most stringent problems are involved in the second-order distortion in mixers to which special attention has been given. The work introduces calibration techniques to overcome these problems. Some design considerations for front-end radio receivers are also given through a mixer-centric approach. The work summarizes the design of several downconversion mixers. Three of the implemented mixers are integrated as the downconversion stages of larger direct conversion receiver chips. One is realized together with the LNA as an RF front-end. Also, some stand-alone structures have been characterized. Two of the mixers that are integrated together with whole analog receivers include calibration structures to improve the second-order intermodulation rejection. A theoretical mismatch analysis of the second-order distortion in the mixers is also presented in this thesis. It gives a comprehensive illustration of the second-order distortion in mixers. It also gives the relationships between the dc-offsets and high IIP2. In addition, circuit and layout techniques to improve the LO-to-RF isolation are discussed. The presented work provides insight into how the mixer immunity against the second-order distortion can be improved. The implemented calibration structures show promising performance. On the basis of these results, several methods of detecting the distortion on-chip and the possibilities of integrating the automatic on-chip calibration procedures to produce a repeatable and well-predictable receiver IIP2 are presented.reviewe

    Design of a 3.1-4.8 GHZ RF front-end for an ultra wideband receiver

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    IEEE 802.15 High Rate Alternative PHY task group (TG3a) is working to define a protocol for Wireless Personal Area Networks (WPANs) which makes it possible to attain data rates of greater than 110Mbps. Ultra Wideband (UWB) technology utilizing frequency band of 3.168 GHz 10.6 GHz is an emerging solution to this with data rates of 110, 200 and 480 Mbps. Initially, UWB mode I devices using only 3.168 GHz 4.752 GHz have been proposed. Low Noise Amplifier (LNA) and I-Q mixers are key components constituting the RF front-end. Performance of these blocks is very critical to the overall performance of the receiver. In general, main considerations for the LNA are low noise, 50 broadband input matching, high gain with maximum flatness and good linearity. For the mixers, it is essential to attain low flicker noise performance coupled with good conversion gain. Proposed LNA architecture is a derivative of inductive source degenerated topology. Broadband matching at the LNA output is achieved using LC band-pass filter. To obtain high gain with maximum flatness, an LC band-pass filter is used at its output. Proposed LNA achieved a gain of 15dB, noise figure of less than 2.6dB and IIP3 of more than -7dBm. Mixer is a modified version of double balanced Gilbert cell topology where both I and Q channel mixers are merged together. Frequency response of each sub-band is matched by using an additional inductor, which further improves the noise figure and conversion gain. Current bleeding scheme is used to further reduce the low frequency noise. Mixer achieves average conversion gain of 14.5dB, IIP3 more than 6dBm and Double Side Band (DSB) noise figure less than 9dB. Maximum variation in conversion gain is desired to be less than 1dB. Both LNA and mixers are designed to be fabricated in TSMC 0.18µm CMOS technology

    Frequency Translation loops for RF filtering-Theory and Design

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    Modern wireless transceivers are required to operate over a wide range of frequencies in order to support the multitude of currently available wireless standards. Wideband operation also enables future systems that aim for better utilization of the available spectrum through dynamic allocation. As such, co-existence problems like harmonic mixing and phase noise become a main concern. In particular, dealing with interfer- ence scenarios is crucial since they directly translate to higher linearity requirements in a receiver. With CMOS driving the consumer electronics market due to low cost and high level of integration demands, the continued increase in speed, mainly intended for digital applications, oers new possibilities for RF design to improve the linearity of front-end receivers. Furthermore, the readily available switches in CMOS have proven to be a viable alternative to traditional active mixers for frequency translation due to their high linearity, low flicker noise, and, most recently recognized, their impedance transformation properties. In this thesis, frequency translation feedback loops employing passive mixers are explored as a means to relax the linearity requirements in a front-end receiver by providing channel selectivity as early as possible in the receiver chain. The proposed receiver architecture employing such loop addresses some of the most common prob- lems of integrated RF lters, while maintaining their inherent tunability. Through a simplied and intuitive analysis, the operation of the receiver is first examined and the design parameters aecting the lter characteristics, such as band- width and stop-band rejection, are determined. A systematic procedure for analyzing the linearity of the receiver reveals the possibility of LNA distortion canceling, which decouples the trade-o between noise, linearity and harmonic radiation. Next, a detailed analysis of frequency translation loops using passive mixers is developed. Only highly simplied analysis of such loops is commonly available in literature. The analysis is based on an iterative procedure to address the complexity introduced by the presence of LO harmonics in the loop and the lack of reverse isolation in the mixers, and results in highly accurate expressions for the harmonic and noise transfer functions of the system. Compared to the alternative of applying general LPTV theory, the procedure developed oers more intuition into the operation of the system and only requires the knowledge of basic Fourier analysis. The solution is shown to be capable of predicting trade-os arising due to harmonic mixing and loop stability requirements, and is therefore useful for both system design and optimization. Finally, as a proof of concept, a chip prototype is designed in a standard 65nm CMOS process. The design occupies +12dBm. As such, the work presented in this thesis aims to provide a highly-integrated means for programmable RF channel selection in wideband receivers. The topic oers several possibilities for further research, either in terms of extending the viability of the system, for example by providing higher order ltering, or by improving performance, such as noise

    D-Band downconversion mixer design in CMOS-SOI

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    Abstract. The current surge in research interest around the sub-THz frequency region comes as a no surprise. The potential for greater data rates and available bandwidths are just a couple reasons why research around these frequencies should be prioritized. Many viable receiver structures have been presented for these frequency regions, but they all have one thing in common: They all include a downconversion mixer. The mixer is a crucial piece in the receiver structure, converting the higher frequency radio frequency (RF) signal to a much lower intermediate frequency (IF) signal using multiplication with a local oscillator (LO) signal. The resulting waveform is much easier to handle for signal processing that comes after. The downconversion should be able to provide a fair amount of gain to the converted signal on a wide range of input signals, measured with the 1dB compression point. The noise figure is also a major consideration for RF-devices, but in the case of the mixer, its importance is not as prevalent as it is for the LNA that precedes it, since the noise of the mixer is attenuated by the gain of the previous stages. This master’s thesis work introduces the basic theory around downconversion mixers, followed by the design of a mixer from schematic level circuit design all the way to the physical layout. The physical design is done using 22nm FDSOI technology, provided by GlobalFoundries. The design is made for a direct conversion receiver using Gilbert cell topology, meaning image rejection is reasonable and depends only on the received signal itself, and good noise and feedthrough performance should be expected in simulations. The mixer is to downconvert a 151 GHz signal down to 0–1 GHz, using an LO signal between 150–151 GHz. Two iterations of the mixer are shown in the end results, the first one being based on the schematic design, and the second one with adjustments made for better performance. While driving a high impedance 500 Ohm load, the second iteration was able to reach a conversion gain of -10.0 dB with a 1dB compression point of 6.4 dBm while dissipating 4.7 mW of power. DSB noise figure was simulated to be 17.3 dB and the LO leakage to the IF output at -27.7 dBm.Alaspäin taajuusmuuntavan sekoittimen suunnittelu D-kaistalle käyttäen CMOS-SOI teknologiaa. Tiivistelmä. Nykyinen tutkimuksen keskittyminen millimetriaalto ja THz taajuusalueille ei tule kenellekään yllätyksenä. Suurempien datanopeuksien ja vapaiden taajuuskaistojen potentiaali ovat vain joitain monista hyvistä käytännön syistä, miksi tutkimusta näiden taajuuksien ympärillä priorisoidaan. Monia käytännöllisiä vastaanotinrakenteita on esitetty näille taajuusalueille ja niillä on kaikilla yksi yhteinen tekijä: tajuusmuunnin alemmille taajuuksille. Taajuusmuunnin eli sekoitin on olennainen osa vastaanotinrakenteita, muuntaen korkeamman radiotaajuuden (RF) matalammalle välitaajuudelle (IF) käyttäen taajuuksien sekoittamista paikallisoskillaattorilla (LO). Mikserin ulostulosignaali on signaalinprosessoinnin näkökulmasta paljon käytännöllisempi. Alaspäin taajuusmuuntavan mikserin tulee pystyä vahvistamaan laajaa skaalaa erivahvuisia signaaleja, minkä ylärajaa mittaamme 1 dB kompressiopisteellä. Radiolaitteistossa kohinaluku tulee yleensä myös ottaa huomioon, mutta johtuen mikserin sijainnista vastaanotinketjussa, kohinaluku vaimenee suhteessa sitä edeltävien vahvistuksien verran, eikä siksi ole niin kriittinen. Tämä diplomityö esittelee lukijalle ensiksi alaspäin muuntavan taajuussekoittimen perusteorian, toisena sen teoreettisen piirikaavion suunnittelun sekä sen simuloinnin tuloksia, ja viimeisenä fyysisen layoutin suunnittelun sekä sen simuloinnin tulokset. Fyysisen layoutin suunnittelu ja simulointi tehdään käyttäen GlobalFoundries 22nm FDSOI teknologiaa. Suunnittelu tehdään suoramuunnosvastaanottimelle käyttäen Gilbertin solu topologiaa, eliminoiden peilitaajuuksista aiheutuvat ongelmat, sekä vähentäen kohinan sekä ei-haluttujen signaalien läpivuotojen vaikutusta. Sekoittimen tulee muuntaa 151 GHz signaali n. 0–1 GHz kantataajuudelle käyttäen LO-signaalia taajuusvälillä 150–151 GHz. Lopullisissa tuloksissa vertaillaan kahta eri iteraatiota. Ensimmäisenä versiota, joka luotiin alun perin teoriapohjaisen piirisuunnittelun pohjalta, sekä toista versiota, missä useilla parannuksilla mikserin suorituskykyä saatiin parannettua. Korkeaimpedanssista 500 Ohmin kuormaa ajaessa mikseri ylsi -10.0 dB vahvistukseen, 1 dB kompressiopiste oli 6.4 dB kuluttaen 4.7 mW virtaa käytössä. Kohinaluvuksi simuloitiin 17.3 dB, sekä LO signaalin vuodosta IF lähtöön oli -27.7 dBm

    Simulations of III-V NWFET Double-Balanced Gilbert Cells with an Improved Noise Model

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    III-V nanowire transistors might provide a mean for extending Moore’s law, by overcoming the scaling limitations ultimately facing planar silicon CMOS. These high frequency capable transistors with cut-off frequencies in the terahertz regime are suitable for radio communication. In this project an active double-balanced gilbert cell mixer consisting of nanowire field-effect transistors (NWFETs) was simulated in Cadence Virtuoso using a compact transistor model. The transistor model was extended to take flicker and thermal noise into account, in order to more accurately compare the mixers against state-of-the-art silicon CMOS implementations. The final mixer for 60 GHz showed much greater linearity (0.4 dBm 1 dB compression and 8.5 dBm IIP 3) than previously reported silicon CMOS counterparts. It exhibited a conversion gain of 3.47 dB, a N F DSB of 14.6 dB and a DC power consumption of 8.7 mW.Based on these findings the design requirements for suitable low noise amplifier was discussed

    Microwave CMOS VCOs and Front-Ends - using integrated passives on-chip and on-carrier

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    The increasing demand for high data rates in wireless communication systems is increasing the requirements on the transceiver front-ends, as they are pushed to utilize more and wider bands at higher frequencies. The work in this thesis is focused on receiver front-ends composed of Low Noise Amplifiers (LNAs), Mixers, and Voltage Controlled Oscillators (VCOs) operating at microwave frequencies. Traditionally, microwave electronics has used exclusive and more expensive semiconductor technologies (III-V materials). However, the rapid development of consumer electronics (e.g. video game consoles) the last decade has pushed the silicon CMOS IC technology towards even smaller feature sizes. This has resulted in high speed transistors (high fT and fmax) with low noise figures. However, as the breakdown voltages have decreased, a lower supply voltage must be used, which has had a negative impact on linearity and dynamic range. Nonetheless, todays downscaled CMOS technology is a feasible alternative for many microwave and even millimeter wave applications. The low quality factor (Q) of passive components on-chip usually limits the high frequency performance. For inductors realized in a standard CMOS process the substrate coupling results in a degraded Q. The quality factor can, however, be improved by moving the passive components off-chip and integrating them on a low loss carrier. This thesis therefore features microwave front-end and VCO designs in CMOS, where some designs have been flip-chip mounted on carriers featuring high Q inductors and low loss baluns. The thesis starts with an introduction to wireless communication, receiver architectures, front-end receiver blocks, and low loss carrier technology, followed by the included papers. The six included papers show the capability of CMOS and carrier technology at microwave frequencies: Papers II, III, and VI demonstrate fully integrated CMOS circuit designs. An LC-VCO using an accumulation mode varactor is presented in Paper II, a QVCO using 4-bit switched tuning is shown in Paper III, and a quadrature receiver front-end (including QVCO) is demonstrated in paper VI. Papers I and IV demonstrate receiver front-ends using low loss baluns on carrier for the LO and RF signals. Paper IV also includes a front-end using single-ended RF input which is converted to differential form in a novel merged LNA and balun. A VCO demonstrating the benefits of a high Q inductor on carrier is presented in Paper V

    Configurable circuits and their impact on multi-standard RF front-end architectures

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    This thesis studies configurable circuits and their impact on multi-standard RF front-end architectures. In particular, low-voltage low-power linear LNA and mixer topologies suitable for implementation in multi-standard front-ends are subject of the investigation. With respect to frequency and bandwidth, multi-standard front-ends can be implemented using either tunable or wideband LNA and mixer topologies. Based on the type of the LNA and mixer(s), multi-standard receiver RF front-ends can be divided into three groups. They can be (tunable) narrow-band, wide-band or combined. The advantages and disadvantages of the different multi-standard receiver RF front-ends have been discussed in detail. The partitioning between off-chip selectivity, on-chip selectivity provided by the LNA and mixer, linearity, power consumption and occupied chip area in each multi-standard RF front-end group are thoroughly investigated. A Figure of Merit (FOM) for the multi-standard receiver RF front-end has been introduced. Based on this FOM the most suitable multi-standard RF front-end group in terms of cost-effectiveness can be selected. In order to determine which multi-standard RF front-end group is the most cost-effective for a practical application, a GSM850/E-GSM/DCS/PCS/Bluetooth/WLANa/b/g multi-standard receiver RF front-end is chosen as a demonstrator. These standards are the most frequently used standards in wireless communication, and this combination of standards allows to users almost "anytime-anywhere" voice and data transfer. In order to verify these results, three demonstrators have been defined, designed and implemented, two wideband RF front-end circuits in 90nm CMOS and 65nm CMOS, and one combined multi-standard RF front-end circuit in 65nm CMOS. The proposed multi-standard demonstrators have been compared with the state-of the art narrow-band, wide-band and combined multi-standard RF front-ends. On the proposed multi-standard RF front-ends and the state-of the art multi-standard RF front-ends the proposed FOM have been applied. The comparison shows that the combined multi-standard RF front-end group is the most cost effective multi-standard group for this application
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