Design-for-Test and Test Optimization Techniques for TSV-based 3D Stacked ICs

<p>As integrated circuits (ICs) continue to scale to smaller dimensions, long interconnects</p><p>have become the dominant contributor to circuit delay and a significant component of</p><p>power consumption. In order to reduce the length of these interconnects, 3D integration</p><p>and 3D stacked ICs (3D SICs) are active areas of research in both academia and industry.</p><p>3D SICs not only have the potential to reduce average interconnect length and alleviate</p><p>many of the problems caused by long global interconnects, but they can offer greater design</p><p>flexibility over 2D ICs, significant reductions in power consumption and footprint in</p><p>an era of mobile applications, increased on-chip data bandwidth through delay reduction,</p><p>and improved heterogeneous integration.</p><p>Compared to 2D ICs, the manufacture and test of 3D ICs is significantly more complex.</p><p>Through-silicon vias (TSVs), which constitute the dense vertical interconnects in a</p><p>die stack, are a source of additional and unique defects not seen before in ICs. At the same</p><p>time, testing these TSVs, especially before die stacking, is recognized as a major challenge.</p><p>The testing of a 3D stack is constrained by limited test access, test pin availability,</p><p>power, and thermal constraints. Therefore, efficient and optimized test architectures are</p><p>needed to ensure that pre-bond, partial, and complete stack testing are not prohibitively</p><p>expensive.</p><p>Methods of testing TSVs prior to bonding continue to be a difficult problem due to test</p><p>access and testability issues. Although some built-in self-test (BIST) techniques have been</p><p>proposed, these techniques have numerous drawbacks that render them impractical. In this dissertation, a low-cost test architecture is introduced to enable pre-bond TSV test through</p><p>TSV probing. This has the benefit of not needing large analog test components on the die,</p><p>which is a significant drawback of many BIST architectures. Coupled with an optimization</p><p>method described in this dissertation to create parallel test groups for TSVs, test time for</p><p>pre-bond TSV tests can be significantly reduced. The pre-bond probing methodology is</p><p>expanded upon to allow for pre-bond scan test as well, to enable both pre-bond TSV and</p><p>structural test to bring pre-bond known-good-die (KGD) test under a single test paradigm.</p><p>The addition of boundary registers on functional TSV paths required for pre-bond</p><p>probing results in an increase in delay on inter-die functional paths. This cost of test</p><p>architecture insertion can be a significant drawback, especially considering that one benefit</p><p>of 3D integration is that critical paths can be partitioned between dies to reduce their delay.</p><p>This dissertation derives a retiming flow that is used to recover the additional delay added</p><p>to TSV paths by test cell insertion.</p><p>Reducing the cost of test for 3D-SICs is crucial considering that more tests are necessary</p><p>during 3D-SIC manufacturing. To reduce test cost, the test architecture and test</p><p>scheduling for the stack must be optimized to reduce test time across all necessary test</p><p>insertions. This dissertation examines three paradigms for 3D integration - hard dies, firm</p><p>dies, and soft dies, that give varying degrees of control over 2D test architectures on each</p><p>die while optimizing the 3D test architecture. Integer linear programming models are developed</p><p>to provide an optimal 3D test architecture and test schedule for the dies in the 3D</p><p>stack considering any or all post-bond test insertions. Results show that the ILP models</p><p>outperform other optimization methods across a range of 3D benchmark circuits.</p><p>In summary, this dissertation targets testing and design-for-test (DFT) of 3D SICs.</p><p>The proposed techniques enable pre-bond TSV and structural test while maintaining a</p><p>relatively low test cost. Future work will continue to enable testing of 3D SICs to move</p><p>industry closer to realizing the true potential of 3D integration.</p>Dissertatio

Investigation into yield and reliability enhancement of TSV-based three-dimensional integration circuits

Three dimensional integrated circuits (3D ICs) have been acknowledged as a promising technology to overcome the interconnect delay bottleneck brought by continuous CMOS scaling. Recent research shows that through-silicon-vias (TSVs), which act as vertical links between layers, pose yield and reliability challenges for 3D design. This thesis presents three original contributions.The first contribution presents a grouping-based technique to improve the yield of 3D ICs under manufacturing TSV defects, where regular and redundant TSVs are partitioned into groups. In each group, signals can select good TSVs using rerouting multiplexers avoiding defective TSVs. Grouping ratio (regular to redundant TSVs in one group) has an impact on yield and hardware overhead. Mathematical probabilistic models are presented for yield analysis under the influence of independent and clustering defect distributions. Simulation results using MATLAB show that for a given number of TSVs and TSV failure rate, careful selection of grouping ratio results in achieving 100% yield at minimal hardware cost (number of multiplexers and redundant TSVs) in comparison to a design that does not exploit TSV grouping ratios. The second contribution presents an efficient online fault tolerance technique based on redundant TSVs, to detect TSV manufacturing defects and address thermal-induced reliability issue. The proposed technique accounts for both fault detection and recovery in the presence of three TSV defects: voids, delamination between TSV and landing pad, and TSV short-to-substrate. Simulations using HSPICE and ModelSim are carried out to validate fault detection and recovery. Results show that regular and redundant TSVs can be divided into groups to minimise area overhead without affecting the fault tolerance capability of the technique. Synthesis results using 130-nm design library show that 100% repair capability can be achieved with low area overhead (4% for the best case). The last contribution proposes a technique with joint consideration of temperature mitigation and fault tolerance without introducing additional redundant TSVs. This is achieved by reusing spare TSVs that are frequently deployed for improving yield and reliability in 3D ICs. The proposed technique consists of two steps: TSV determination step, which is for achieving optimal partition between regular and spare TSVs into groups; The second step is TSV placement, where temperature mitigation is targeted while optimizing total wirelength and routing difference. Simulation results show that using the proposed technique, 100% repair capability is achieved across all (five) benchmarks with an average temperature reduction of 75.2? (34.1%) (best case is 99.8? (58.5%)), while increasing wirelength by a small amount

Design for pre-bond testability in 3D integrated circuits

In this dissertation we propose several DFT techniques specific to 3D stacked IC systems. The goal has explicitly been to create techniques that integrate easily with existing IC test systems. Specifically, this means utilizing scan- and wrapper-based techniques, two foundations of the digital IC test industry. First, we describe a general test architecture for 3D ICs. In this architecture, each tier of a 3D design is wrapped in test control logic that both manages tier test pre-bond and integrates the tier into the large test architecture post-bond. We describe a new kind of boundary scan to provide the necessary test control and observation of the partial circuits, and we propose a new design methodology for test hardcore that ensures both pre-bond functionality and post-bond optimality. We present the application of these techniques to the 3D-MAPS test vehicle, which has proven their effectiveness. Second, we extend these DFT techniques to circuit-partitioned designs. We find that boundary scan design is generally sufficient, but that some 3D designs require special DFT treatment. Most importantly, we demonstrate that the functional partitioning inherent in 3D design can potentially decrease the total test cost of verifying a circuit. Third, we present a new CAD algorithm for designing 3D test wrappers. This algorithm co-designs the pre-bond and post-bond wrappers to simultaneously minimize test time and routing cost. On average, our algorithm utilizes over 90% of the wires in both the pre-bond and post-bond wrappers. Finally, we look at the 3D vias themselves to develop a low-cost, high-volume pre-bond test methodology appropriate for production-level test. We describe the shorting probes methodology, wherein large test probes are used to contact multiple small 3D vias. This technique is an all-digital test method that integrates seamlessly into existing test flows. Our experimental results demonstrate two key facts: neither the large capacitance of the probe tips nor the process variation in the 3D vias and the probe tips significantly hinders the testability of the circuits. Taken together, this body of work defines a complete test methodology for testing 3D ICs pre-bond, eliminating one of the key hurdles to the commercialization of 3D technology.PhDCommittee Chair: Lee, Hsien-Hsin; Committee Member: Bakir, Muhannad; Committee Member: Lim, Sung Kyu; Committee Member: Vuduc, Richard; Committee Member: Yalamanchili, Sudhaka

A 3D IC BIST for pre-bond test of TSVs using Ring Oscillators

International audience3D stacked integrated circuits based on Through Silicon Vias (TSV) are promising with their high performances and small form factor. However, these circuits present many test issues, especially for TSVs. In this paper we propose a novel Built-In-Self-Test (BIST) architecture for pre-bond testing of TSVs in 3D stacked integrated circuits. The main idea is to measure the variation of TSVs capacitances in order to detect defective TSVs. The BIST architecture is based on ring oscillators, frequencies of which depend on TSVs capacitances. The proposed BIST is integrated within the JTAG standard. This paper presents spice simulation results and logic synthesis results of the proposed TSV ring oscillator structure using a 65 nm CMOS technology, including 10 μm diameter TSV middle technology. Due to local process variations, the proposed test architecture is limited in accuracy; it detects only large capacitive faults on TSVs

High Speed Test Interface Module Using MEMS Technology

With the transient frequency of available CMOS technologies exceeding hundreds of gigahertz and the increasing complexity of Integrated Circuit (IC) designs, it is now apparent that the architecture of current testers needs to be greatly improved to keep up with the formidable challenges ahead. Test requirements for modern integrated circuits are becoming more stringent, complex and costly. These requirements include an increasing number of test channels, higher test-speeds and enhanced measurement accuracy and resolution. In a conventional test configuration, the signal path from Automatic Test Equipment (ATE) to the Device-Under-Test (DUT) includes long traces of wires. At frequencies above a few gigahertz, testing integrated circuits becomes a challenging task. The effects on transmission lines become critical requiring impedance matching to minimize signal reflection. AC resistance due to the skin effect and electromagnetic coupling caused by radiation can also become important factors affecting the test results. In the design of a Device Interface Board (DIB), the greater the physical separation of the DUT and the ATE pin electronics, the greater the distortion and signal degradation. In this work, a new Test Interface Module (TIM) based on MEMS technology is proposed to reduce the distance between the tester and device-under-test by orders of magnitude. The proposed solution increases the bandwidth of test channels and reduces the undesired effects of transmission lines on the test results. The MEMS test interface includes a fixed socket and a removable socket. The removable socket incorporates MEMS contact springs to provide temporary with the DUT pads and the fixed socket contains a bed of micro-pins to establish electrical connections with the ATE pin electronics. The MEMS based contact springs have been modified to implement a high-density wafer level test probes for Through Silicon Vias (TSVs) in three dimensional integrated circuits (3D-IC). Prototypes have been fabricated using Silicon On Insulator SOI wafer. Experimental results indicate that the proposed architectures can operate up to 50 GHz without much loss or distortion. The MEMS probes can also maintain a good elastic performance without any damage or deformation in the test phase

Vernier Ring Based Pre-bond Through Silicon Vias Test in 3D ICs

Defects in TSV will lead to variations in the propagation delay of the net connected to the faulty TSV. A non-invasive Vernier Ring based method for TSV pre-bond testing is proposed to detect resistive open and leakage faults. TSVs are used as capacitive loads of their driving gates, then time interval compared with the fault-free TSVs will be detected. The time interval can be detected with picosecond level resolution, and digitized into a digital code to compare with an expected value of fault-free. Experiments on fault detection are presented through HSPICE simulations using realistic models for a 45 nm CMOS technology. The results show the effectiveness in the detection of time interval 10 ps, resistive open defects 0.2 kΩ above and equivalent leakage resistance less than 18 MΩ. Compared with existing methods, detection precision, area overhead, and test time are effectively improved, furthermore, the fault degree can be digitalized into digital code

Contactless Test Access Mechanism for 3D IC

3D IC integration presents many advantages over the current 2D IC integration. It has the potential to reduce the power consumption and the physical size while supporting higher bandwidth and processing speed. Through Silicon Via’s (TSVs) are vertical interconnects between different layers of 3D ICs with a typical 5μm diameter and 50μm length. To test a 3D IC, an access mechanism is needed to apply test vectors to TSVs and observe their responses. However, TSVs are too small for access by current wafer probes and direct TSV probing may affect their physical integrity. In addition, the probe needles for direct TSV probing must be cleaned or replaced frequently. Contactless probing method resolves most of the TSV probing problems and can be employed for small-pitch TSVs. In this dissertation, contactless test access mechanisms for 3D IC have been explored using capacitive and inductive coupling techniques. Circuit models for capacitive and inductive communication links are extracted using 3D full-wave simulations and then circuit level simulations are carried out using Advanced Design System (ADS) design environment to verify the results. The effects of cross-talk and misalignment on the communication link have been investigated. A contactless TSV probing method using capacitive coupling is proposed and simulated. A prototype was fabricated using TSMC 65nm CMOS technology to verify the proposed method. The measurement results on the fabricated prototype show that this TSV probing scheme presents -55dB insertion loss at 1GHz frequency and maintains higher than 35dB signal-to-noise ratio within 5µm distance. A microscale contactless probe based on the principle of resonant inductive coupling has also been designed and simulated. Experimental measurements on a prototype fabricated in TSMC 65nm CMOS technology indicate that the data signal on the TSV can be reconstructed when the distance between the TSV and the probe remains less than 15µm

Thermal-Aware Test Schedule and TAM Co-Optimization for Three-Dimensional IC

[[abstract]]Testing is regarded as one of the most difficult challenges for three-dimensional integrated circuits (3D ICs). In this paper, we want to optimize the cost of TAM (test access mechanism) and the test time for 3D IC. We used both greedy and simulated annealing algorithms to solve this optimization problem. We compare the results of two assumptions: soft-die mode and hard-die mode. The former assumes that the DfT of dies cannot be changed, while the latter assumes that the DfT of dies can be adjusted. The results show that thermal-aware cooptimization is essential to decide the optimal TAM and test schedule. Blindly adding TAM cannot reduce the total test cost due to temperature constraints. Another conclusion is that soft-die mode is more effective than hard-die mode to reduce the total test cost for 3D IC.[[notice]]補正完畢[[booktype]]電子

Physical design methodologies for monolithic 3D ICs

The objective of this research is to develop physical design methodologies for monolithic 3D ICs and use them to evaluate the improvements in the power-performance envelope offered over 2D ICs. In addition, design-for-test (DfT) techniques essential for the adoption of shorter term through-silicon-via (TSV) based 3D ICs are explored. Testing of TSV-based 3D ICs is one of the last challenges facing their commercialization. First, a pre-bond testable 3D scan chain construction technique is developed. Next, a transition-delay-fault test architecture is presented, along with a study on how to mitigate IR-drop. Finally, to facilitate partitioning, a quick and accurate framework for test-TSV estimation is developed. Block-level monolithic 3D ICs will be the first to emerge, as significant IP can be reused. However, no physical design flows exist, and hence a monolithic 3D floorplanning framework is developed. Next, inter-tier performance differences that arise due to the not yet mature fabrication process are investigated and modeled. Finally, an inter-tier performance-difference aware floorplanner is presented, and it is demonstrated that high quality 3D floorplans are achievable even under these inter-tier differences. Monolithic 3D offers sufficient integration density to place individual gates in three dimensions and connect them together. However, no tools or techniques exist that can take advantage of the high integration density offered. Therefore, a gate-level framework that leverages existing 2D ICs tools is presented. This framework also provides congestion modeling and produces results that minimize routing congestion. Next, this framework is extended to commercial 2D IC tools, so that steps such as timing optimization and clock tree synthesis can be applied. Finally, a voltage-drop-aware partitioning technique is presented that can alleviate IR-drop issues, without any impact on the performance or maximum operating temperature of the chip.Ph.D