Design and cryogenic operation of a hybrid quantum-CMOS circuit

Silicon-On-Insulator nanowire transistors of very small dimensions exhibit quantum effects like Coulomb blockade or single-dopant transport at low temperature. The same process also yields excellent field-effect transistors (FETs) for larger dimensions, allowing to design integrated circuits. Using the same process, we have co-integrated a FET-based ring oscillator circuit operating at cryogenic temperature which generates a radio-frequency (RF) signal on the gate of a nanoscale device showing Coulomb oscillations. We observe rectification of the RF signal, in good agreement with modeling

Design of a tunable multi-band differential LC VCO using 0.35 mu m SiGe BiCMOS technology for multi-standard wireless communication systems

In this paper, an integrated 2.2-5.7GHz multi-band differential LC VCO for multi-standard wireless communication systems was designed utilizing 0.35 mu m SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together in the same circuit, is a novel approach for wideband VCOs. Based on the post-layout simulation results, the VCO can be tuned using a DC voltage of 0 to 3.3 V for 5 different frequency bands (2.27-2.51 GHz, 2.48-2.78 GHz, 3.22-3.53 GHz, 3.48-3.91 GHz and 4.528-5.7 GHz) with a maximum bandwidth of 1.36 GHz and a minimum bandwidth of 300 MHz. The designed and simulated VCO can generate a differential output power between 0.992 and -6.087 dBm with an average power consumption of 44.21 mW including the buffers. The average second and third harmonics level were obtained as -37.21 and -47.6 dBm, respectively. The phase noise between -110.45 and -122.5 dBc/Hz, that was simulated at 1 MHz offset, can be obtained through the frequency of interest. Additionally, the figure of merit (FOM), that includes all important parameters such as the phase noise, the power consumption and the ratio of the operating frequency to the offset frequency, is between -176.48 and -181.16 and comparable or better than the ones with the other current VCOs. The main advantage of this study in comparison with the other VCOs, is covering 5 frequency bands starting from 2.27 up to 5.76 GHz without FOM and area abandonment. Output power of the fundamental frequency changes between -6.087 and 0.992 dBm, depending on the bias conditions (operating bands). Based on the post-layout simulation results, the core VCO circuit draws a current between 2.4-6.3 mA and between 11.4 and 15.3 mA with the buffer circuit from 3.3 V supply. The circuit occupies an area of 1.477 mm(2) on Si substrate, including DC, digital and RF pads

Towards near-threshold server processors

The popularity of cloud computing has led to a dramatic increase in the number of data centers in the world. The ever-increasing computational demands along with the slowdown in technology scaling has ushered an era of power-limited servers. Techniques such as near-threshold computing (NTC) can be used to improve energy efficiency in the post-Dennard scaling era. This paper describes an architecture based on the FD-SOI process technology for near-threshold operation in servers. Our work explores the trade-offs in energy and performance when running a wide range of applications found in private and public clouds, ranging from traditional scale-out applications, such as web search or media streaming, to virtualized banking applications. Our study demonstrates the benefits of near-threshold operation and proposes several directions to synergistically increase the energy proportionality of a near-threshold server

Co-integration of Silicon Nanodevices and NEMS for Advanced Information Processing (Invited Talk)

In this paper we present our recent attempts at developing the advanced information processing devices by integrating nano-electro-mechanical (NEM)structures into conventional silicon nanodevices. Firstly, we show high-speed and nonvolatile NEM memory which features a mechanically-bistable floating gate is integrated onto MOSFETs. Secondly we discuss hybrid systems of single-electron transistors and NEM structures for exploring new switching principles