573 research outputs found
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Signal acquisition challenges in mobile systems
In recent decades, the advent of mobile computing has changed human lives by providing information that was not available in the past. The mobile computing platform opens a new door to the connected world in which various forms of hand-held and wearable systems are ubiquitous. A single mobile device plays multiple roles and shapes human lives towards a better future. In these systems, sensor-based data acquisition plays an essential role in generating and providing useful information.
The increased number of sensors is embedded in a single device in order to process various signal modalities. In practice, more than 30 data converters are required in designing a mobile system in which the data-converting blocks become among the most power-hungry components in battery-operated systems. Due to the increased variety of sensors, mobile systems are meant to face several obstacles. For example, the increased number of sensors increase system power consumption during the system operation. The increased power consumption directly affects operation time because mobile systems are powered by a limited energy source. Moreover, an increased amount of information also gives rise to bandwidth problems in communication due to the increased volume of data transmission. Also, this system design requires a larger area in a silicon die so that multiple signal paths can be placed without cross-channel interference. Therefore, the system design has presented a challenge in terms of trying to resolve the design constraints such as power consumption, bandwidth usage, storage space, and design complexity issues.
To overcome these obstacles, in this dissertation, efficient data acquisition and processing methods are investigated. Specifically, this thesis considers the problems of energy-efficient sampling and binary event detection.
This dissertation begins by presenting a new signal sampling scheme that enables higher precision signal conversion in compressed-sensing-based signal acquisition. The proposed scheme is based on the popular successive approximation register and employs a modified compressive sensing technique to increase the resolution of successive-approximation-register (SAR) analog-to-digital converter (ADC) architecture. Circuit-level architecture is discussed to implement the proposed scheme using the SAR ADC architecture. A non-uniform quantization scheme is proposed and it improves data quality after data acquisition. The proposed scheme is expected to be used for medium- or high- frequency data conversion.
Secondly, the possibility of using fewer ADCs than channels is studied by leveraging sparse-signal representation and blind-source-separation (BSS) techniques.
In particular, this dissertation examines the problem of using a single ADC or quantizer system for digitizing multi-channel inputs. Mixing and de-mixing strategies are extensively studied for sampling frequency-sparse signals and the proposed multi-channel architecture can be easily implemented using today's analog/mixed-signal circuits.
The third part of this dissertation investigates a binary hypothesis testing problem. In mobile devices such as smartphones and tablet PCs, a major portion of energy is consumed in user interfaces (LCD display and touch input processing). For accurate detection and better user interface, energy-efficient sensing and detection schemes are necessary to manage multiple sensor inputs. A highly efficient detection scheme is presented that can detect binary events reliably with a fraction of the energy consumption required in the conventional energy detection.Electrical and Computer Engineerin
๊ณ ์ ์๋ฆฌ์ผ ๋งํฌ๋ฅผ ์ํ ๊ณ ๋ฆฌ ๋ฐ์ง๊ธฐ๋ฅผ ๊ธฐ๋ฐ์ผ๋ก ํ๋ ์ฃผํ์ ํฉ์ฑ๊ธฐ
ํ์๋
ผ๋ฌธ(๋ฐ์ฌ) -- ์์ธ๋ํ๊ต๋ํ์ : ๊ณต๊ณผ๋ํ ์ ๊ธฐยท์ ๋ณด๊ณตํ๋ถ, 2022. 8. ์ ๋๊ท .In this dissertation, major concerns in the clocking of modern serial links are discussed. As sub-rate, multi-standard architectures are becoming predominant, the conventional clocking methodology seems to necessitate innovation in terms of low-cost implementation. Frequency synthesis with active, inductor-less oscillators replacing LC counterparts are reviewed, and solutions for two major drawbacks are proposed. Each solution is verified by prototype chip design, giving a possibility that the inductor-less oscillator may become a proper candidate for future high-speed serial links.
To mitigate the high flicker noise of a high-frequency ring oscillator (RO), a reference multiplication technique that effectively extends the bandwidth of the following all-digital phase-locked loop (ADPLL) is proposed. The technique avoids any jitter accumulation, generating a clean mid-frequency clock, overall achieving high jitter performance in conjunction with the ADPLL. Timing constraint for the proper reference multiplication is first analyzed to determine the calibration points that may correct the existent phase errors. The weight for each calibration point is updated by the proposed a priori probability-based least-mean-square (LMS) algorithm. To minimize the time required for the calibration, each gain for the weight update is adaptively varied by deducing a posteriori which error source dominates the others. The prototype chip is fabricated in a 40-nm CMOS technology, and its measurement results verify the low-jitter, high-frequency clock generation with fast calibration settling. The presented work achieves an rms jitter of 177/223 fs at 8/16-GHz output, consuming 12.1/17-mW power.
As the second embodiment, an RO-based ADPLL with an analog technique that addresses the high supply sensitivity of the RO is presented. Unlike prior arts, the circuit for the proposed technique does not extort the RO voltage headroom, allowing high-frequency oscillation. Further, the performance given from the technique is robust over process, voltage, and temperature (PVT) variations, avoiding the use of additional calibration hardware. Lastly, a comprehensive analysis of phase noise contribution is conducted for the overall ADPLL, followed by circuit optimizations, to retain the low-jitter output. Implemented in a 40-nm CMOS technology, the frequency synthesizer achieves an rms jitter of 289 fs at 8 GHz output without any injected supply noise. Under a 20-mVrms white supply noise, the ADPLL suppresses supply-noise-induced jitter by -23.8 dB.๋ณธ ๋
ผ๋ฌธ์ ํ๋ ์๋ฆฌ์ผ ๋งํฌ์ ํด๋ฝํน์ ๊ด์ฌ๋๋ ์ฃผ์ํ ๋ฌธ์ ๋ค์ ๋ํ์ฌ ๊ธฐ์ ํ๋ค. ์ค์๋, ๋ค์ค ํ์ค ๊ตฌ์กฐ๋ค์ด ์ฑํ๋๊ณ ์๋ ์ถ์ธ์ ๋ฐ๋ผ, ๊ธฐ์กด์ ํด๋ผํน ๋ฐฉ๋ฒ์ ๋ฎ์ ๋น์ฉ์ ๊ตฌํ์ ๊ด์ ์์ ์๋ก์ด ํ์ ์ ํ์๋ก ํ๋ค. LC ๊ณต์ง๊ธฐ๋ฅผ ๋์ ํ์ฌ ๋ฅ๋ ์์ ๋ฐ์ง๊ธฐ๋ฅผ ์ฌ์ฉํ ์ฃผํ์ ํฉ์ฑ์ ๋ํ์ฌ ์์๋ณด๊ณ , ์ด์ ๋ฐ์ํ๋ ๋๊ฐ์ง ์ฃผ์ ๋ฌธ์ ์ ๊ณผ ๊ฐ๊ฐ์ ๋ํ ํด๊ฒฐ ๋ฐฉ์์ ํ์ํ๋ค. ๊ฐ ์ ์ ๋ฐฉ๋ฒ์ ํ๋กํ ํ์
์นฉ์ ํตํด ๊ทธ ํจ์ฉ์ฑ์ ๊ฒ์ฆํ๊ณ , ์ด์ด์ ๋ฅ๋ ์์ ๋ฐ์ง๊ธฐ๊ฐ ๋ฏธ๋์ ๊ณ ์ ์๋ฆฌ์ผ ๋งํฌ์ ํด๋ฝํน์ ์ฌ์ฉ๋ ๊ฐ๋ฅ์ฑ์ ๋ํด ๊ฒํ ํ๋ค.
์ฒซ๋ฒ์งธ ์์ฐ์ผ๋ก์จ, ๊ณ ์ฃผํ ๊ณ ๋ฆฌ ๋ฐ์ง๊ธฐ์ ๋์ ํ๋ฆฌ์ปค ์ก์์ ์ํ์ํค๊ธฐ ์ํด ๊ธฐ์ค ์ ํธ๋ฅผ ๋ฐฐ์ํํ์ฌ ๋ท๋จ์ ์์ ๊ณ ์ ๋ฃจํ์ ๋์ญํญ์ ํจ๊ณผ์ ์ผ๋ก ๊ทน๋ํ ์ํค๋ ํ๋ก ๊ธฐ์ ์ ์ ์ํ๋ค. ๋ณธ ๊ธฐ์ ์ ์งํฐ๋ฅผ ๋์ ์ํค์ง ์์ผ๋ฉฐ ๋ฐ๋ผ์ ๊นจ๋ํ ์ค๊ฐ ์ฃผํ์ ํด๋ฝ์ ์์ฑ์์ผ ์์ ๊ณ ์ ๋ฃจํ์ ํจ๊ป ๋์ ์ฑ๋ฅ์ ๊ณ ์ฃผํ ํด๋ฝ์ ํฉ์ฑํ๋ค. ๊ธฐ์ค ์ ํธ๋ฅผ ์ฑ๊ณต์ ์ผ๋ก ๋ฐฐ์ํํ๊ธฐ ์ํ ํ์ด๋ฐ ์กฐ๊ฑด๋ค์ ๋จผ์ ๋ถ์ํ์ฌ ํ์ด๋ฐ ์ค๋ฅ๋ฅผ ์ ๊ฑฐํ๊ธฐ ์ํ ๋ฐฉ๋ฒ๋ก ์ ํ์
ํ๋ค. ๊ฐ ๊ต์ ์ค๋์ ์ฐ์ญ์ ํ๋ฅ ์ ๊ธฐ๋ฐ์ผ๋กํ LMS ์๊ณ ๋ฆฌ์ฆ์ ํตํด ๊ฐฑ์ ๋๋๋ก ์ค๊ณ๋๋ค. ๊ต์ ์ ํ์ํ ์๊ฐ์ ์ต์ํ ํ๊ธฐ ์ํ์ฌ, ๊ฐ ๊ต์ ์ด๋์ ํ์ด๋ฐ ์ค๋ฅ ๊ทผ์๋ค์ ํฌ๊ธฐ๋ฅผ ๊ท๋ฉ์ ์ผ๋ก ์ถ๋ก ํ ๊ฐ์ ๋ฐํ์ผ๋ก ์ง์์ ์ผ๋ก ์ ์ด๋๋ค. 40-nm CMOS ๊ณต์ ์ผ๋ก ๊ตฌํ๋ ํ๋กํ ํ์
์นฉ์ ์ธก์ ์ ํตํด ์ ์์, ๊ณ ์ฃผํ ํด๋ฝ์ ๋น ๋ฅธ ๊ต์ ์๊ฐ์์ ํฉ์ฑํด ๋์ ํ์ธํ์๋ค. ์ด๋ 177/223 fs์ rms ์งํฐ๋ฅผ ๊ฐ์ง๋ 8/16 GHz์ ํด๋ฝ์ ์ถ๋ ฅํ๋ค.
๋๋ฒ์งธ ์์ฐ์ผ๋ก์จ, ๊ณ ๋ฆฌ ๋ฐ์ง๊ธฐ์ ๋์ ์ ์ ๋
ธ์ด์ฆ ์์กด์ฑ์ ์ํ์ํค๋ ๊ธฐ์ ์ด ํฌํจ๋ ์ฃผํ์ ํฉ์ฑ๊ธฐ๊ฐ ์ค๊ณ๋์๋ค. ์ด๋ ๊ณ ๋ฆฌ ๋ฐ์ง๊ธฐ์ ์ ์ ํค๋๋ฃธ์ ๋ณด์กดํจ์ผ๋ก์ ๊ณ ์ฃผํ ๋ฐ์ง์ ๊ฐ๋ฅํ๊ฒ ํ๋ค. ๋์๊ฐ, ์ ์ ๋
ธ์ด์ฆ ๊ฐ์ ์ฑ๋ฅ์ ๊ณต์ , ์ ์, ์จ๋ ๋ณ๋์ ๋ํ์ฌ ๋ฏผ๊ฐํ์ง ์์ผ๋ฉฐ, ๋ฐ๋ผ์ ์ถ๊ฐ์ ์ธ ๊ต์ ํ๋ก๋ฅผ ํ์๋ก ํ์ง ์๋๋ค. ๋ง์ง๋ง์ผ๋ก, ์์ ๋
ธ์ด์ฆ์ ๋ํ ํฌ๊ด์ ๋ถ์๊ณผ ํ๋ก ์ต์ ํ๋ฅผ ํตํ์ฌ ์ฃผํ์ ํฉ์ฑ๊ธฐ์ ์ ์ก์ ์ถ๋ ฅ์ ๋ฐฉํดํ์ง ์๋ ๋ฐฉ๋ฒ์ ๊ณ ์ํ์๋ค. ํด๋น ํ๋กํ ํ์
์นฉ์ 40-nm CMOS ๊ณต์ ์ผ๋ก ๊ตฌํ๋์์ผ๋ฉฐ, ์ ์ ๋
ธ์ด์ฆ๊ฐ ์ธ๊ฐ๋์ง ์์ ์ํ์์ 289 fs์ rms ์งํฐ๋ฅผ ๊ฐ์ง๋ 8 GHz์ ํด๋ฝ์ ์ถ๋ ฅํ๋ค. ๋ํ, 20 mVrms์ ์ ์ ๋
ธ์ด์ฆ๊ฐ ์ธ๊ฐ๋์์ ๋์ ์ ๋๋๋ ์งํฐ์ ์์ -23.8 dB ๋งํผ ์ค์ด๋ ๊ฒ์ ํ์ธํ์๋ค.1 Introduction 1
1.1 Motivation 3
1.1.1 Clocking in High-Speed Serial Links 4
1.1.2 Multi-Phase, High-Frequency Clock Conversion 8
1.2 Dissertation Objectives 10
2 RO-Based High-Frequency Synthesis 12
2.1 Phase-Locked Loop Fundamentals 12
2.2 Toward All-Digital Regime 15
2.3 RO Design Challenges 21
2.3.1 Oscillator Phase Noise 21
2.3.2 Challenge 1: High Flicker Noise 23
2.3.3 Challenge 2: High Supply Noise Sensitivity 26
3 Filtering RO Noise 28
3.1 Introduction 28
3.2 Proposed Reference Octupler 34
3.2.1 Delay Constraint 34
3.2.2 Phase Error Calibration 38
3.2.3 Circuit Implementation 51
3.3 IL-ADPLL Implementation 55
3.4 Measurement Results 59
3.5 Summary 63
4 RO Supply Noise Compensation 69
4.1 Introduction 69
4.2 Proposed Analog Closed Loop for Supply Noise Compensation 72
4.2.1 Circuit Implementation 73
4.2.2 Frequency-Domain Analysis 76
4.2.3 Circuit Optimization 81
4.3 ADPLL Implementation 87
4.4 Measurement Results 90
4.5 Summary 98
5 Conclusions 99
A Notes on the 8REF 102
B Notes on the ACSC 105๋ฐ
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์ ๋ฅ ์ผ์ฑ ํผ๋๋ฐฑ ์์คํ ์ ์ด์ฉํ ๊ณ ์์ ์ฑ ์ฐํ๋ฌผ TFT ์ฌํํธ ๋ ์ง์คํฐ์ ์ค๊ณ ๋ฐ ์ ์
ํ์๋
ผ๋ฌธ (๋ฐ์ฌ)-- ์์ธ๋ํ๊ต ๋ํ์ : ์ ๊ธฐยท์ปดํจํฐ๊ณตํ๋ถ, 2017. 2. ์ ๋๊ท .Integration of shift registers on the glass panel allows the display to be thinner, lighter, and cheaper to produce, thanks to the reduction of the number of ICs for scanning horizontal lines. Circuits of the shift register employing n-type thin film transistors (TFTs), such as hydrogenated amorphous silicon (a-Si:H) and oxide TFTs, have been reported. Recently, oxide TFTs attract much attention due to their high mobility (5~10 cm2/Vโs) compared with that of a-Si:H TFT (0.8cm2/Vโs). However, oxide TFTs often suffer from severe degradation of the threshold voltage (VTH) against the temperature and electrical stress.
In this paper, in order to compensate the instability of oxide TFTs in the shift register, an oxide TFT with double gates, which can control VTH by varying the top gate bias (VTG) is adopted. The top gate of the double-gate TFT can be fabricated in the same process for the pixel IZO (Indium Zinc Oxide) so that an additional process only for the top gate is not required. Adequate VTG is provided timely, adaptively to the gate of the oxide TFTs to stabilize the threshold voltage.
The fabrication result shows that the proposed shift register using VTG set at an adapted value become stable at 100โ whereas the conventional one is mal-functioning.
The optimum VTG varies from product to product and changes continuously over the lifetime of the display. Therefore, the feedback driving system suitable for the proposed shift register is required to search the optimum VTG. The system has two main functionsthe first is to sense the current of shift register and the second is the searching algorithm for finding the optimum VTG. When the transistors are degraded by an external stress, the current of the whole shift registers is changed. The information about the VTH degradation in the shift register can be gathered via current sensing circuit. The sensed current is integrated to generate the output and is forwarded to an ADC. The binary-converted current of shift register is processed by the proposed algorithm in the digital domain for obtaining an optimum VTG and then the result is converted back to analog to generate VTG. The IC implementing such functions is fabricated in a 0.18 ฮผm BCDMOS process. When the shift register current is measured on the conventional system with increasing temperature up to 80โ, it is increased to more than 10 times than that at the room temperature. However, the proposed feedback system keeps a highly stable (<13%) current level of shift register up to 80โ with an optimized VTG.Abstracts i
Table of Contents iii
List of Tables v
List of Figures vi
Chapter 1 Introduction 1
1.1 Background 2
1.2 Outline 7
Chapter 2 Review of oxide-based TFT device and N-type TFT circuit design 8
2.1 Overview 9
2.1.1 Characteristics of Oxide TFT 9
2.2 Oxide-based TFT 14
2.2.1 Electrical characteristics of oxide-based TFT 14
2.2.2 Stability of oxide-based TFT 18
2.3 NMOS driving circuit 24
2.3.1 Bootstrapping driving circuit 24
2.3.2 Shift register with n-type TFT 28
Chapter 3 Proposed Oxide TFT Shift Register 37
3.1 Overview 38
3.2 Characteristic of Double Gate TFT 39
3.3 Design of New shift register 46
3.3.1 Simulation Result of Conventional shift register 46
3.3.2 New shift register using Double Gate TFT 51
3.3.3 Simulation Modeling of Double Gate TFT 58
3.3.4 Simulation and Experimental Result 61
Chapter 4 Real Time Current-Sensing Feedback Compensation System 71
4.1 Overview 72
4.2 System Architecture 74
4.3 Circuit Design 77
4.3.1 Current Sensing Block 77
4.3.2 ADC/DAC Block 85
4.4 Optimum Point Searching Algorithm 100
4.5 System Verification 106
Chapter 5 Summary 116
Appendix A SPICE models 118
Bibliography 120Docto
A high resolution data conversion and digital processing for high energy physics calorimeter detectors readout
L'abstract รจ presente nell'allegato / the abstract is in the attachmen
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