573 research outputs found

    ๊ณ ์† ์‹œ๋ฆฌ์–ผ ๋งํฌ๋ฅผ ์œ„ํ•œ ๊ณ ๋ฆฌ ๋ฐœ์ง„๊ธฐ๋ฅผ ๊ธฐ๋ฐ˜์œผ๋กœ ํ•˜๋Š” ์ฃผํŒŒ์ˆ˜ ํ•ฉ์„ฑ๊ธฐ

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    ํ•™์œ„๋…ผ๋ฌธ(๋ฐ•์‚ฌ) -- ์„œ์šธ๋Œ€ํ•™๊ต๋Œ€ํ•™์› : ๊ณต๊ณผ๋Œ€ํ•™ ์ „๊ธฐยท์ •๋ณด๊ณตํ•™๋ถ€, 2022. 8. ์ •๋•๊ท .In this dissertation, major concerns in the clocking of modern serial links are discussed. As sub-rate, multi-standard architectures are becoming predominant, the conventional clocking methodology seems to necessitate innovation in terms of low-cost implementation. Frequency synthesis with active, inductor-less oscillators replacing LC counterparts are reviewed, and solutions for two major drawbacks are proposed. Each solution is verified by prototype chip design, giving a possibility that the inductor-less oscillator may become a proper candidate for future high-speed serial links. To mitigate the high flicker noise of a high-frequency ring oscillator (RO), a reference multiplication technique that effectively extends the bandwidth of the following all-digital phase-locked loop (ADPLL) is proposed. The technique avoids any jitter accumulation, generating a clean mid-frequency clock, overall achieving high jitter performance in conjunction with the ADPLL. Timing constraint for the proper reference multiplication is first analyzed to determine the calibration points that may correct the existent phase errors. The weight for each calibration point is updated by the proposed a priori probability-based least-mean-square (LMS) algorithm. To minimize the time required for the calibration, each gain for the weight update is adaptively varied by deducing a posteriori which error source dominates the others. The prototype chip is fabricated in a 40-nm CMOS technology, and its measurement results verify the low-jitter, high-frequency clock generation with fast calibration settling. The presented work achieves an rms jitter of 177/223 fs at 8/16-GHz output, consuming 12.1/17-mW power. As the second embodiment, an RO-based ADPLL with an analog technique that addresses the high supply sensitivity of the RO is presented. Unlike prior arts, the circuit for the proposed technique does not extort the RO voltage headroom, allowing high-frequency oscillation. Further, the performance given from the technique is robust over process, voltage, and temperature (PVT) variations, avoiding the use of additional calibration hardware. Lastly, a comprehensive analysis of phase noise contribution is conducted for the overall ADPLL, followed by circuit optimizations, to retain the low-jitter output. Implemented in a 40-nm CMOS technology, the frequency synthesizer achieves an rms jitter of 289 fs at 8 GHz output without any injected supply noise. Under a 20-mVrms white supply noise, the ADPLL suppresses supply-noise-induced jitter by -23.8 dB.๋ณธ ๋…ผ๋ฌธ์€ ํ˜„๋Œ€ ์‹œ๋ฆฌ์–ผ ๋งํฌ์˜ ํด๋ฝํ‚น์— ๊ด€์—ฌ๋˜๋Š” ์ฃผ์š”ํ•œ ๋ฌธ์ œ๋“ค์— ๋Œ€ํ•˜์—ฌ ๊ธฐ์ˆ ํ•œ๋‹ค. ์ค€์†๋„, ๋‹ค์ค‘ ํ‘œ์ค€ ๊ตฌ์กฐ๋“ค์ด ์ฑ„ํƒ๋˜๊ณ  ์žˆ๋Š” ์ถ”์„ธ์— ๋”ฐ๋ผ, ๊ธฐ์กด์˜ ํด๋ผํ‚น ๋ฐฉ๋ฒ•์€ ๋‚ฎ์€ ๋น„์šฉ์˜ ๊ตฌํ˜„์˜ ๊ด€์ ์—์„œ ์ƒˆ๋กœ์šด ํ˜์‹ ์„ ํ•„์š”๋กœ ํ•œ๋‹ค. LC ๊ณต์ง„๊ธฐ๋ฅผ ๋Œ€์‹ ํ•˜์—ฌ ๋Šฅ๋™ ์†Œ์ž ๋ฐœ์ง„๊ธฐ๋ฅผ ์‚ฌ์šฉํ•œ ์ฃผํŒŒ์ˆ˜ ํ•ฉ์„ฑ์— ๋Œ€ํ•˜์—ฌ ์•Œ์•„๋ณด๊ณ , ์ด์— ๋ฐœ์ƒํ•˜๋Š” ๋‘๊ฐ€์ง€ ์ฃผ์š” ๋ฌธ์ œ์ ๊ณผ ๊ฐ๊ฐ์— ๋Œ€ํ•œ ํ•ด๊ฒฐ ๋ฐฉ์•ˆ์„ ํƒ์ƒ‰ํ•œ๋‹ค. ๊ฐ ์ œ์•ˆ ๋ฐฉ๋ฒ•์„ ํ”„๋กœํ† ํƒ€์ž… ์นฉ์„ ํ†ตํ•ด ๊ทธ ํšจ์šฉ์„ฑ์„ ๊ฒ€์ฆํ•˜๊ณ , ์ด์–ด์„œ ๋Šฅ๋™ ์†Œ์ž ๋ฐœ์ง„๊ธฐ๊ฐ€ ๋ฏธ๋ž˜์˜ ๊ณ ์† ์‹œ๋ฆฌ์–ผ ๋งํฌ์˜ ํด๋ฝํ‚น์— ์‚ฌ์šฉ๋  ๊ฐ€๋Šฅ์„ฑ์— ๋Œ€ํ•ด ๊ฒ€ํ† ํ•œ๋‹ค. ์ฒซ๋ฒˆ์งธ ์‹œ์—ฐ์œผ๋กœ์จ, ๊ณ ์ฃผํŒŒ ๊ณ ๋ฆฌ ๋ฐœ์ง„๊ธฐ์˜ ๋†’์€ ํ”Œ๋ฆฌ์ปค ์žก์Œ์„ ์™„ํ™”์‹œํ‚ค๊ธฐ ์œ„ํ•ด ๊ธฐ์ค€ ์‹ ํ˜ธ๋ฅผ ๋ฐฐ์ˆ˜ํ™”ํ•˜์—ฌ ๋’ท๋‹จ์˜ ์œ„์ƒ ๊ณ ์ • ๋ฃจํ”„์˜ ๋Œ€์—ญํญ์„ ํšจ๊ณผ์ ์œผ๋กœ ๊ทน๋Œ€ํ™” ์‹œํ‚ค๋Š” ํšŒ๋กœ ๊ธฐ์ˆ ์„ ์ œ์•ˆํ•œ๋‹ค. ๋ณธ ๊ธฐ์ˆ ์€ ์ง€ํ„ฐ๋ฅผ ๋ˆ„์  ์‹œํ‚ค์ง€ ์•Š์œผ๋ฉฐ ๋”ฐ๋ผ์„œ ๊นจ๋—ํ•œ ์ค‘๊ฐ„ ์ฃผํŒŒ์ˆ˜ ํด๋ฝ์„ ์ƒ์„ฑ์‹œ์ผœ ์œ„์ƒ ๊ณ ์ • ๋ฃจํ”„์™€ ํ•จ๊ป˜ ๋†’์€ ์„ฑ๋Šฅ์˜ ๊ณ ์ฃผํŒŒ ํด๋ฝ์„ ํ•ฉ์„ฑํ•œ๋‹ค. ๊ธฐ์ค€ ์‹ ํ˜ธ๋ฅผ ์„ฑ๊ณต์ ์œผ๋กœ ๋ฐฐ์ˆ˜ํ™”ํ•˜๊ธฐ ์œ„ํ•œ ํƒ€์ด๋ฐ ์กฐ๊ฑด๋“ค์„ ๋จผ์ € ๋ถ„์„ํ•˜์—ฌ ํƒ€์ด๋ฐ ์˜ค๋ฅ˜๋ฅผ ์ œ๊ฑฐํ•˜๊ธฐ ์œ„ํ•œ ๋ฐฉ๋ฒ•๋ก ์„ ํŒŒ์•…ํ•œ๋‹ค. ๊ฐ ๊ต์ • ์ค‘๋Ÿ‰์€ ์—ฐ์—ญ์  ํ™•๋ฅ ์„ ๊ธฐ๋ฐ˜์œผ๋กœํ•œ LMS ์•Œ๊ณ ๋ฆฌ์ฆ˜์„ ํ†ตํ•ด ๊ฐฑ์‹ ๋˜๋„๋ก ์„ค๊ณ„๋œ๋‹ค. ๊ต์ •์— ํ•„์š”ํ•œ ์‹œ๊ฐ„์„ ์ตœ์†Œํ™” ํ•˜๊ธฐ ์œ„ํ•˜์—ฌ, ๊ฐ ๊ต์ • ์ด๋“์€ ํƒ€์ด๋ฐ ์˜ค๋ฅ˜ ๊ทผ์›๋“ค์˜ ํฌ๊ธฐ๋ฅผ ๊ท€๋‚ฉ์ ์œผ๋กœ ์ถ”๋ก ํ•œ ๊ฐ’์„ ๋ฐ”ํƒ•์œผ๋กœ ์ง€์†์ ์œผ๋กœ ์ œ์–ด๋œ๋‹ค. 40-nm CMOS ๊ณต์ •์œผ๋กœ ๊ตฌํ˜„๋œ ํ”„๋กœํ† ํƒ€์ž… ์นฉ์˜ ์ธก์ •์„ ํ†ตํ•ด ์ €์†Œ์Œ, ๊ณ ์ฃผํŒŒ ํด๋ฝ์„ ๋น ๋ฅธ ๊ต์ • ์‹œ๊ฐ„์•ˆ์— ํ•ฉ์„ฑํ•ด ๋ƒ„์„ ํ™•์ธํ•˜์˜€๋‹ค. ์ด๋Š” 177/223 fs์˜ rms ์ง€ํ„ฐ๋ฅผ ๊ฐ€์ง€๋Š” 8/16 GHz์˜ ํด๋ฝ์„ ์ถœ๋ ฅํ•œ๋‹ค. ๋‘๋ฒˆ์งธ ์‹œ์—ฐ์œผ๋กœ์จ, ๊ณ ๋ฆฌ ๋ฐœ์ง„๊ธฐ์˜ ๋†’์€ ์ „์› ๋…ธ์ด์ฆˆ ์˜์กด์„ฑ์„ ์™„ํ™”์‹œํ‚ค๋Š” ๊ธฐ์ˆ ์ด ํฌํ•จ๋œ ์ฃผํŒŒ์ˆ˜ ํ•ฉ์„ฑ๊ธฐ๊ฐ€ ์„ค๊ณ„๋˜์—ˆ๋‹ค. ์ด๋Š” ๊ณ ๋ฆฌ ๋ฐœ์ง„๊ธฐ์˜ ์ „์•• ํ—ค๋“œ๋ฃธ์„ ๋ณด์กดํ•จ์œผ๋กœ์„œ ๊ณ ์ฃผํŒŒ ๋ฐœ์ง„์„ ๊ฐ€๋Šฅํ•˜๊ฒŒ ํ•œ๋‹ค. ๋‚˜์•„๊ฐ€, ์ „์› ๋…ธ์ด์ฆˆ ๊ฐ์†Œ ์„ฑ๋Šฅ์€ ๊ณต์ •, ์ „์••, ์˜จ๋„ ๋ณ€๋™์— ๋Œ€ํ•˜์—ฌ ๋ฏผ๊ฐํ•˜์ง€ ์•Š์œผ๋ฉฐ, ๋”ฐ๋ผ์„œ ์ถ”๊ฐ€์ ์ธ ๊ต์ • ํšŒ๋กœ๋ฅผ ํ•„์š”๋กœ ํ•˜์ง€ ์•Š๋Š”๋‹ค. ๋งˆ์ง€๋ง‰์œผ๋กœ, ์œ„์ƒ ๋…ธ์ด์ฆˆ์— ๋Œ€ํ•œ ํฌ๊ด„์  ๋ถ„์„๊ณผ ํšŒ๋กœ ์ตœ์ ํ™”๋ฅผ ํ†ตํ•˜์—ฌ ์ฃผํŒŒ์ˆ˜ ํ•ฉ์„ฑ๊ธฐ์˜ ์ €์žก์Œ ์ถœ๋ ฅ์„ ๋ฐฉํ•ดํ•˜์ง€ ์•Š๋Š” ๋ฐฉ๋ฒ•์„ ๊ณ ์•ˆํ•˜์˜€๋‹ค. ํ•ด๋‹น ํ”„๋กœํ† ํƒ€์ž… ์นฉ์€ 40-nm CMOS ๊ณต์ •์œผ๋กœ ๊ตฌํ˜„๋˜์—ˆ์œผ๋ฉฐ, ์ „์› ๋…ธ์ด์ฆˆ๊ฐ€ ์ธ๊ฐ€๋˜์ง€ ์•Š์€ ์ƒํƒœ์—์„œ 289 fs์˜ rms ์ง€ํ„ฐ๋ฅผ ๊ฐ€์ง€๋Š” 8 GHz์˜ ํด๋ฝ์„ ์ถœ๋ ฅํ•œ๋‹ค. ๋˜ํ•œ, 20 mVrms์˜ ์ „์› ๋…ธ์ด์ฆˆ๊ฐ€ ์ธ๊ฐ€๋˜์—ˆ์„ ๋•Œ์— ์œ ๋„๋˜๋Š” ์ง€ํ„ฐ์˜ ์–‘์„ -23.8 dB ๋งŒํผ ์ค„์ด๋Š” ๊ฒƒ์„ ํ™•์ธํ•˜์˜€๋‹ค.1 Introduction 1 1.1 Motivation 3 1.1.1 Clocking in High-Speed Serial Links 4 1.1.2 Multi-Phase, High-Frequency Clock Conversion 8 1.2 Dissertation Objectives 10 2 RO-Based High-Frequency Synthesis 12 2.1 Phase-Locked Loop Fundamentals 12 2.2 Toward All-Digital Regime 15 2.3 RO Design Challenges 21 2.3.1 Oscillator Phase Noise 21 2.3.2 Challenge 1: High Flicker Noise 23 2.3.3 Challenge 2: High Supply Noise Sensitivity 26 3 Filtering RO Noise 28 3.1 Introduction 28 3.2 Proposed Reference Octupler 34 3.2.1 Delay Constraint 34 3.2.2 Phase Error Calibration 38 3.2.3 Circuit Implementation 51 3.3 IL-ADPLL Implementation 55 3.4 Measurement Results 59 3.5 Summary 63 4 RO Supply Noise Compensation 69 4.1 Introduction 69 4.2 Proposed Analog Closed Loop for Supply Noise Compensation 72 4.2.1 Circuit Implementation 73 4.2.2 Frequency-Domain Analysis 76 4.2.3 Circuit Optimization 81 4.3 ADPLL Implementation 87 4.4 Measurement Results 90 4.5 Summary 98 5 Conclusions 99 A Notes on the 8REF 102 B Notes on the ACSC 105๋ฐ•

    Development of whole-heart myocardial perfusion magnetic resonance imaging

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    Myocardial perfusion imaging is of huge importance for the detection of coronary artery disease (CAD), one of the leading causes of morbidity and mortality worldwide, as it can provide non-invasive detection at the early stages of the disease. Magnetic resonance imaging (MRI) can assess myocardial perfusion by capturing the rst-pass perfusion (FPP) of a gadolinium-based contrast agent (GBCA), which is now a well-established technique and compares well with other modalities. However, current MRI methods are restricted by their limited coverage of the left ventricle. Interest has therefore grown in 3D volumetric \whole-heart" FPP by MRI, although many challenges currently limit this. For this thesis, myocardial perfusion assessment in general, and 3D whole-heart FPP in particular, were reviewed in depth, alongside MRI techniques important for achieving 3D FPP. From this, a 3D `stack-of-stars' (SOS) FPP sequence was developed with the aim of addressing some current limitations. These included the breath-hold requirement during GBCA rst-pass, long 3D shot durations corrupted by cardiac motion, and a propensity for artefacts in FPP. Parallel imaging and compressed sensing were investigated for accelerating whole-heart FPP, with modi cations presented to potentially improve robustness to free-breathing. Novel sequences were developed that were capable of individually improving some current sequence limits, including spatial resolution and signal-to-noise ratio, although with some sacri ces. A nal 3D SOS FPP technique was developed and tested at stress during free-breathing examinations of CAD patients and healthy volunteers. This enabled the rst known detection of an inducible perfusion defect with a free-breathing, compressed sensing, 3D FPP sequence; however, further investigation into the diagnostic performance is required. Simulations were performed to analyse potential artefacts in 3D FPP, as well as to examine ways towards further optimisation of 3D SOS FPP. The nal chapter discusses some limitations of the work and proposes opportunities for further investigation.Open Acces

    Current-mode processing based Temperature-to-Digital Converters for MEMS applications

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    This thesis presents novel Temperature-to-Digital Converters (TDCs) designed and fabricated in CMOS technology. These integrated smart temperature sensing circuits are widely employed in the Micro-Electro-Mechanical Systems (MEMS) field in order to mitigate the impact of the ambient temperature on their performance. In this framework, the increasingly stringent demands of the market have led the cost-effectiveness specification of these compensation solutions to an higher and higher level, directly translating into the requirement of more and more compact designs (< 0.1 mmยฒ); in addition to this, considering that the great majority of the systems whose thermal drift needs to be compensated is battery supplied, ultra-low energy-per-conversion (< 10 nJ) is another requirement of primary importance. This thesis provides a detailed description of two different test-chips (mas fuerte and es posible) that have been designed with this orientation and that are the result of three years of research activity; for both devices, the conception, design, layout and testing phases are all described in detail and are supported by simulation and measurement results.This thesis presents novel Temperature-to-Digital Converters (TDCs) designed and fabricated in CMOS technology. These integrated smart temperature sensing circuits are widely employed in the Micro-Electro-Mechanical Systems (MEMS) field in order to mitigate the impact of the ambient temperature on their performance. In this framework, the increasingly stringent demands of the market have led the cost-effectiveness specification of these compensation solutions to an higher and higher level, directly translating into the requirement of more and more compact designs (< 0.1 mmยฒ); in addition to this, considering that the great majority of the systems whose thermal drift needs to be compensated is battery supplied, ultra-low energy-per-conversion (< 10 nJ) is another requirement of primary importance. This thesis provides a detailed description of two different test-chips (mas fuerte and es posible) that have been designed with this orientation and that are the result of three years of research activity; for both devices, the conception, design, layout and testing phases are all described in detail and are supported by simulation and measurement results

    Electronics for Sensors

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    The aim of this Special Issue is to explore new advanced solutions in electronic systems and interfaces to be employed in sensors, describing best practices, implementations, and applications. The selected papers in particular concern photomultiplier tubes (PMTs) and silicon photomultipliers (SiPMs) interfaces and applications, techniques for monitoring radiation levels, electronics for biomedical applications, design and applications of time-to-digital converters, interfaces for image sensors, and general-purpose theory and topologies for electronic interfaces

    ์ „๋ฅ˜ ์„ผ์‹ฑ ํ”ผ๋“œ๋ฐฑ ์‹œ์Šคํ…œ์„ ์ด์šฉํ•œ ๊ณ ์•ˆ์ •์„ฑ ์‚ฐํ™”๋ฌผ TFT ์‰ฌํ”„ํŠธ ๋ ˆ์ง€์Šคํ„ฐ์˜ ์„ค๊ณ„ ๋ฐ ์ œ์ž‘

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    ํ•™์œ„๋…ผ๋ฌธ (๋ฐ•์‚ฌ)-- ์„œ์šธ๋Œ€ํ•™๊ต ๋Œ€ํ•™์› : ์ „๊ธฐยท์ปดํ“จํ„ฐ๊ณตํ•™๋ถ€, 2017. 2. ์ •๋•๊ท .Integration of shift registers on the glass panel allows the display to be thinner, lighter, and cheaper to produce, thanks to the reduction of the number of ICs for scanning horizontal lines. Circuits of the shift register employing n-type thin film transistors (TFTs), such as hydrogenated amorphous silicon (a-Si:H) and oxide TFTs, have been reported. Recently, oxide TFTs attract much attention due to their high mobility (5~10 cm2/Vโˆ™s) compared with that of a-Si:H TFT (0.8cm2/Vโˆ™s). However, oxide TFTs often suffer from severe degradation of the threshold voltage (VTH) against the temperature and electrical stress. In this paper, in order to compensate the instability of oxide TFTs in the shift register, an oxide TFT with double gates, which can control VTH by varying the top gate bias (VTG) is adopted. The top gate of the double-gate TFT can be fabricated in the same process for the pixel IZO (Indium Zinc Oxide) so that an additional process only for the top gate is not required. Adequate VTG is provided timely, adaptively to the gate of the oxide TFTs to stabilize the threshold voltage. The fabrication result shows that the proposed shift register using VTG set at an adapted value become stable at 100โ„ƒ whereas the conventional one is mal-functioning. The optimum VTG varies from product to product and changes continuously over the lifetime of the display. Therefore, the feedback driving system suitable for the proposed shift register is required to search the optimum VTG. The system has two main functionsthe first is to sense the current of shift register and the second is the searching algorithm for finding the optimum VTG. When the transistors are degraded by an external stress, the current of the whole shift registers is changed. The information about the VTH degradation in the shift register can be gathered via current sensing circuit. The sensed current is integrated to generate the output and is forwarded to an ADC. The binary-converted current of shift register is processed by the proposed algorithm in the digital domain for obtaining an optimum VTG and then the result is converted back to analog to generate VTG. The IC implementing such functions is fabricated in a 0.18 ฮผm BCDMOS process. When the shift register current is measured on the conventional system with increasing temperature up to 80โ„ƒ, it is increased to more than 10 times than that at the room temperature. However, the proposed feedback system keeps a highly stable (<13%) current level of shift register up to 80โ„ƒ with an optimized VTG.Abstracts i Table of Contents iii List of Tables v List of Figures vi Chapter 1 Introduction 1 1.1 Background 2 1.2 Outline 7 Chapter 2 Review of oxide-based TFT device and N-type TFT circuit design 8 2.1 Overview 9 2.1.1 Characteristics of Oxide TFT 9 2.2 Oxide-based TFT 14 2.2.1 Electrical characteristics of oxide-based TFT 14 2.2.2 Stability of oxide-based TFT 18 2.3 NMOS driving circuit 24 2.3.1 Bootstrapping driving circuit 24 2.3.2 Shift register with n-type TFT 28 Chapter 3 Proposed Oxide TFT Shift Register 37 3.1 Overview 38 3.2 Characteristic of Double Gate TFT 39 3.3 Design of New shift register 46 3.3.1 Simulation Result of Conventional shift register 46 3.3.2 New shift register using Double Gate TFT 51 3.3.3 Simulation Modeling of Double Gate TFT 58 3.3.4 Simulation and Experimental Result 61 Chapter 4 Real Time Current-Sensing Feedback Compensation System 71 4.1 Overview 72 4.2 System Architecture 74 4.3 Circuit Design 77 4.3.1 Current Sensing Block 77 4.3.2 ADC/DAC Block 85 4.4 Optimum Point Searching Algorithm 100 4.5 System Verification 106 Chapter 5 Summary 116 Appendix A SPICE models 118 Bibliography 120Docto

    ๆ•ดๆ•ฐ่ซ–ใ‚’็”จใ„ใŸAD/DAๅค‰ๆ›ๅ™จใฎ็ ”็ฉถ

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    A high resolution data conversion and digital processing for high energy physics calorimeter detectors readout

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    L'abstract รจ presente nell'allegato / the abstract is in the attachmen
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