A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.A fully-integrated reconfigurable dual-band (760-960 MHz and 2.4-2.5 GHz) transceiver (TRX) for short range wireless communications is presented. The TRX consists of two individually-optimized RF front-ends for each band and one shared power-scalable analog baseband. The sub-GHz receiver has achieved the maximum 75 dBc 3rd-order harmonic rejection ratio (HRR3) by inserting a Q-enhanced notch filtering RF amplifier (RFA). In 2.4 GHz band, a single-ended-to-differential RFA with gain/phase imbalance compensation is proposed in the receiver. A ΣΔ fractional-N PLL frequency synthesizer with two switchable Class-C VCOs is employed to provide the LOs. Moreover, the integrated multi-mode PAs achieve the output P1dB (OP1dB) of 16.3 dBm and 14.1 dBm with both 25% PAE for sub-GHz and 2.4 GHz bands, respectively. A power-control loop is proposed to detect the input signal PAPR in real-time and flexibly reconfigure the PA's operation modes to enhance the back-off efficiency. With this proposed technique, the PAE of the sub-GHz PA is improved by x3.24 and x1.41 at 9 dB and 3 dB back-off powers, respectively, and the PAE of the 2.4 GHz PA is improved by x2.17 at 6 dB back-off power. The presented transceiver has achieved comparable or even better performance in terms of noise figure, HRR, OP1dB and power efficiency compared with the state-of-the-art.Peer reviewe

Voltage controlled oscillator for mm-wave radio systems

Abstract. The advancement in silicon technology has accelerated the development of integrated millimeter-wave transceiver systems operating up to 100 GHz with sophisticated functionality at a reduced consumer cost. Due to the progress in the field of signal processing, frequency modulated continuous wave (FMCW) radar has become common in recent years. A high-performance local oscillator (LO) is required to generate reference signals utilized in these millimeter-wave radar transceivers. To accomplish this, novel design techniques in fundamental voltage controlled oscillators (VCO) are necessary to achieve low phase noise, wide frequency tuning range, and good power efficiency. Although integrated VCOs have been studied for decades, as we move higher in the radio frequency spectrum, there are new trade-offs in the performance parameters that require further characterization. The work described in this thesis aims to design a fully integrated fundamental VCO targeting to 150 GHz, i.e., D-Band. The purpose is to observe and analyze the design limitations at these high frequencies and their corresponding trade-offs during the design procedure. The topology selected for this study is the cross-coupled LC tank VCO. For the study, two design topologies were considered: a conventional cross-coupled LC tank VCO and an inductive divider cross-coupled LC tank VCO. The conventional LC tank VCO yields better performance in terms of phase noise and tuning range. It is observed that the VCO is highly sensitive to parasitic contributions by the transistors, and the layout interconnects, thus limiting the targeted frequency range. The dimensions of the LC tank and the transistors are selected carefully. Moreover, the VCO performance is limited by the low Q factor of the LC tank governed by the varactor that is degrading the phase noise performance and the tuning range, respectively. The output buffer loaded capacitance and the core power consumption of the VCO are optimized. The layout is drawn carefully with strategies to minimize the parasitic effects. Considering all the design challenges, a 126 GHz VCO with a tuning range of 3.9% is designed. It achieves FOMT (Figure-of-merit) of -172 dBc/Hz, and phase noise of -99.14 dBc/Hz at 10 MHz offset, Core power consumption is 8.9 mW from a 1.2 V supply. Just falling short of the targeted frequency, the design is suitable for FMCW radar applications for future technologies. The design was done using Silicon-on-Insulator (SOI) CMOS technology

Design of CMOS integrated frequency synthesizers for ultra-wideband wireless communications systems

Ultra¬wide band (UWB) system is a breakthrough in wireless communication, as it provides data rate one order higher than existing ones. This dissertation focuses on the design of CMOS integrated frequency synthesizer and its building blocks used in UWB system. A mixer¬based frequency synthesizer architecture is proposed to satisfy the agile frequency hopping requirement, which is no more than 9.5 ns, three orders faster than conventional phase¬locked loop (PLL)¬based synthesizers. Harmonic cancela¬tion technique is extended and applied to suppress the undesired harmonic mixing components. Simulation shows that sidebands at 2.4 GHz and 5 GHz are below 36 dBc from carrier. The frequency synthesizer contains a novel quadrature VCO based on the capacitive source degeneration structure. The QVCO tackles the jeopardous ambiguity of the oscillation frequency in conventional QVCOs. Measurement shows that the 5¬GHz CSD¬QVCO in 0.18 µm CMOS technology draws 5.2 mA current from a 1.2 V power supply. Its phase noise is ¬120 dBc at 3 MHz offset. Compared with existing phase shift LC QVCOs, the proposed CSD¬QVCO presents better phase noise and power efficiency. Finally, a novel injection locking frequency divider (ILFD) is presented. Im¬plemented with three stages in 0.18 µm CMOS technology, the ILFD draws 3¬mA current from a 1.8¬V power supply. It achieves multiple large division ratios as 6, 12, and 18 with all locking ranges greater than 1.7 GHz and injection frequency up to 11 GHz. Compared with other published ILFDs, the proposed ILFD achieves the largest division ratio with satisfactory locking range

Characterization of process variability and robust optimization of analog circuits

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2008.Includes bibliographical references (p. 161-174).Continuous scaling of CMOS technology has enabled dramatic performance enhancement of CMOS devices and has provided speed, power, and density improvement in both digital and analog circuits. CMOS millimeter-wave applications operating at more than 50GHz frequencies has become viable in sub-100nm CMOS technologies, providing advantages in cost and high density integration compared to other heterogeneous technologies such as SiGe and III-V compound semiconductors. However, as the operating frequency of CMOS circuits increases, it becomes more difficult to obtain sufficiently wide operating ranges for robust operation in essential analog building blocks such as voltage-controlled oscillators (VCOs) and frequency dividers. The fluctuations of circuit parameters caused by the random and systematic variations in key manufacturing steps become more significant in nano-scale technologies. The process variation of circuit performance is quickly becoming one of the main concerns in high performance analog design. In this thesis, we show design and analysis of a VCO and frequency divider operating beyond 70GHz in a 65nm SOI CMOS technology. The VCO and frequency divider employ design techniques enlarging frequency operating ranges to improve the robustness of circuit operation. Circuit performance is measured from a number of die samples to identify the statistical properties of performance variation. A back-propagation of variation (BPV) scheme based on sensitivity analysis of circuit performance is proposed to extract critical circuit parameter variation using statistical measurement results of the frequency divider. We analyze functional failure caused by performance variability, and propose dynamic and static optimization methods to improve parametric yield. An external bias control is utilized to dynamically tune the divider operating range and to compensate for performance variation. A novel time delay model of a differential CML buffer is proposed to functionally approximate the maximum operating frequency of the frequency divider, which dramatically reduces computational cost of parametric yield estimation. The functional approximation enables the optimization of the VCO and frequency divider parametric yield with a reasonable amount of simulation time.by Daihyun Lim.Ph.D

A Recofigurable Tri-Band Interconnect for Future Network-On-Chip

The scaling of CMOS feature sizes has yielded the capability of integrating heterogeneous intellectual properties (IPs) like graphics processing units (GPUs), digital signal processors (DSPs) and central processing units (CPUs) on a single die. The collection of multiple IPs on a single die presents a problem of reliable communication due to congestion. The infrastructure that facilitates and manages communication among IPs is referred to as a network-on-chip (NoC). Its ultimate goal should be low latency with negligible power and area consumption. Unfortunately, as CMOS feature sizes have been scaling smaller, this has exacerbated latency and signal degradation due to increasing on-chip channel resistance. Furthermore, contemporary interfaces use baseband-only signaling and have critical limitations like exponential energy consumption, limited bandwidth and non-reconfigurable data access.;In this work, we propose an energy efficient tri-band (baseband + 2 RF bands) signaling interface that is capable of simultaneous bi-directional communication and reconfigurable data access. Additionally, communication is accomplished through a shared transmission line which reduces the overall number of global interconnections. As a result, this reduces area consumption and mitigates interconnection complexity. The primary signicance of this interconnect configuration compared to contemporary designs is an increase of bandwidth and energy efficiency.;The interconnect design is composed of a baseband transceiver and two RF (10Ghz and 20GHz) transceivers. The RF transceivers utilize amplitude-shift keying (ASK) modulation scheme. ASK modulation allows ease of circuit design, but most importantly it can be used for noncoherent communication, which we implemented in this system. Noncoherent ASK modulation is area conservative and power efficient since there is no longer a need for power-hungry frequency synthesizers. Moreover, noncoherent ASK demodulation accomplishes direct-down conversation through a passive self-mixer for additional power savings.;The results from our work show that a multi-band interconnect is a suitable remedy for future NoC communication that has been reaching its bandwidth limitation with baseband-only signaling. In conclusion, this work demonstrates a sustainable balance of energy efficiency and increased bandwidth for future on-chip interconnect designs

A Highly Digital VCO-Based ADC With Lookup-Table-Based Background Calibration

CMOS technology scaling has enabled dramatic improvement for digital circuits both in terms of speed and power efficiency. However, most traditional analog-to-digital converter (ADC) architectures are challenged by ever-decreasing supply voltage. The improvement in time resolution enabled by increased digital speeds drives design towards time-domain architectures such as voltage-controlled-oscillator (VCO) based ADCs. The main challenge in VCO-based ADC design is mitigating the nonlinearity of VCO Voltage-to-frequency (V-to-f) characteristics. Achieving signal-to-noise ratio (SNR) performance better than 40dB requires some form of calibration, which can be realized by analog or digital techniques, or some combination. This dissertation proposes a highly digital, reconfigurable VCO-based ADC with lookup-table (LUT) based background calibration based on split ADC architecture. Each of the two split channels, ADC A and B , contains two VCOs in a differential configuration. This helps alleviate even-order distortions as well as increase the dynamic range. A digital controller on chip can reconfigure the ADCs\u27 sampling rates and resolutions to adapt to various application scenarios. Different types of input signals can be used to train the ADC’s LUT parameters through the simple, anti-aliasing continuous-time input to achieve target resolution. The chip is fabricated in a 180 nm CMOS process, and the active area of analog and digital circuits is 0.09 and 0.16mm^2, respectively. Power consumption of the core ADC function is 25 mW. Measured results for this prototype design with 12-b resolution show ENOB improves from uncorrected 5-b to 11.5-b with calibration time within 200 ms (780K conversions at 5 MSps sample rate)

Ku band rotary traveling-wave voltage controlled oscillator

Voltage-controlled oscillator (VCO) plays a key role in determination of the link budget of wireless communication, and consequently the performance of the transceiver. Lowering the noise contribution from the VCO to the entire system is always challenging and remains the active research area. Motivated by high demands for the low-phase noise, low-power consumption VCO in the application of 5G, radar-sensing system, implantable device, to name a few, this research focused on the design of a rotary travelling-wave oscillator (RTWO). A power conscious RTWO with reliable direction control of the wave propagation was investigated. The phase noise was analyzed based on the proposed RTWO. The phase noise reduction technique was introduced by using tail current source filtering technique in which a figure-8 inductors were employed. Three RTWO were implemented based on GF 130 nm standard CMOS process and TSMC 130 nm standard CMOS process. The first design was achieving 16-GHz frequency with power consumption of 5.8-mW with 190.3 dBc/Hz FoM at 1 MHz offset. The second and third design were operating at 14-GHz with a power consumption range of 13-18.4mW and 14.6-20.5mW, respectively. The one with filtering technique achieved FoM of 184.8 dBc/Hz at 1 MHz whereas the one without inudctor filtering obtained FoM of 180.8 dBc/Hz at 1 MHz offset based on simulation

Design of CMOS integrated frequency synthesizers for ultra-wideband wireless communications systems

Ultra¬wide band (UWB) system is a breakthrough in wireless communication, as it provides data rate one order higher than existing ones. This dissertation focuses on the design of CMOS integrated frequency synthesizer and its building blocks used in UWB system. A mixer¬based frequency synthesizer architecture is proposed to satisfy the agile frequency hopping requirement, which is no more than 9.5 ns, three orders faster than conventional phase¬locked loop (PLL)¬based synthesizers. Harmonic cancela¬tion technique is extended and applied to suppress the undesired harmonic mixing components. Simulation shows that sidebands at 2.4 GHz and 5 GHz are below 36 dBc from carrier. The frequency synthesizer contains a novel quadrature VCO based on the capacitive source degeneration structure. The QVCO tackles the jeopardous ambiguity of the oscillation frequency in conventional QVCOs. Measurement shows that the 5¬GHz CSD¬QVCO in 0.18 µm CMOS technology draws 5.2 mA current from a 1.2 V power supply. Its phase noise is ¬120 dBc at 3 MHz offset. Compared with existing phase shift LC QVCOs, the proposed CSD¬QVCO presents better phase noise and power efficiency. Finally, a novel injection locking frequency divider (ILFD) is presented. Im¬plemented with three stages in 0.18 µm CMOS technology, the ILFD draws 3¬mA current from a 1.8¬V power supply. It achieves multiple large division ratios as 6, 12, and 18 with all locking ranges greater than 1.7 GHz and injection frequency up to 11 GHz. Compared with other published ILFDs, the proposed ILFD achieves the largest division ratio with satisfactory locking range

Integrated RF oscillators and LO signal generation circuits

This thesis deals with fully integrated LC oscillators and local oscillator (LO) signal generation circuits. In communication systems a good-quality LO signal for up- and down-conversion in transmitters is needed. The LO signal needs to span the required frequency range and have good frequency stability and low phase noise. Furthermore, most modern systems require accurate quadrature (IQ) LO signals. This thesis tackles these challenges by presenting a detailed study of LC oscillators, monolithic elements for good-quality LC resonators, and circuits for IQ-signal generation and for frequency conversion, as well as many experimental circuits. Monolithic coils and variable capacitors are essential, and this thesis deals with good structures of these devices and their proper modeling. As experimental test devices, over forty monolithic inductors and thirty varactors have been implemented, measured and modeled. Actively synthesized reactive elements were studied as replacements for these passive devices. At first glance these circuits show promising characteristics, but closer noise and nonlinearity analysis reveals that these circuits suffer from high noise levels and a small dynamic range. Nine circuit implementations with various actively synthesized variable capacitors were done. Quadrature signal generation can be performed with three different methods, and these are analyzed in the thesis. Frequency conversion circuits are used for alleviating coupling problems or to expand the number of frequency bands covered. The thesis includes an analysis of single-sideband mixing, frequency dividers, and frequency multipliers, which are used to perform the four basic arithmetical operations for the frequency tone. Two design cases are presented. The first one is a single-sideband mixing method for the generation of WiMedia UWB LO-signals, and the second one is a frequency conversion unit for a digital period synthesizer. The last part of the thesis presents five research projects. In the first one a temperature-compensated GaAs MESFET VCO was developed. The second one deals with circuit and device development for an experimental-level BiCMOS process. A cable-modem RF tuner IC using a SiGe process was developed in the third project, and a CMOS flip-chip VCO module in the fourth one. Finally, two frequency synthesizers for UWB radios are presented