2,231 research outputs found
Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter
We study, using numerical simulation, the intrinsic parameter fluctuations in sub 10 nm gate length double gate MOSFETs introduced by discreteness of charge and atomicity of matter. The employed "atomistic" drift-diffusion simulation approach includes quantum corrections based on the density gradient formalism. The quantum confinement and source-to-drain tunnelling effects are carefully calibrated in respect of self-consistent Poisson-Schrodinger and nonequilibrium Green's function simulations. Various sources of intrinsic parameter fluctuations, including random discrete dopants in the source/drain regions, single dopant or charged defect state in the channel region and gate line edge roughness, are studied in detail
Meeting the design challenges of nano-CMOS electronics: an introduction to an upcoming EPSRC pilot project
The years of âhappy scalingâ are over and the fundamental challenges that the semiconductor industry faces, at both technology and device level, will impinge deeply upon the design of future integrated circuits and systems. This paper provides an introduction to these challenges and gives an overview of the Grid infrastructure that will be developed as part of a recently funded EPSRC pilot project to address them, and we hope, which will revolutionise the electronics design industry
Breakdown of universal mobility curves in sub-100-nm MOSFETs
We explore the breakdown of universal mobility behavior in sub-100-nm Si MOSFETs, using a novel three-dimensional (3-D) statistical simulation approach. In this approach, carrier trajectories in the bulk are treated via 3-D Brownian dynamics, while the carrier-interface roughness scattering is treated using a novel empirical model
Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study
In this paper, we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub-100 mn MOSFETs. The simulations have been performed using a three-dimensional (3-D) implementation of the density gradient (DG) formalism incorporated in our established 3-D atomistic simulation approach. This results in a self-consistent 3-D quantum mechanical picture, which implies not only the vertical inversion layer quantization but also the lateral confinement effects related to current filamentation in the âvalleysâ of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical dopant fluctuations, is an increase in both threshold voltage fluctuations and lowering. At the same time, the random dopant induced threshold voltage lowering partially compensates for the quantum mechanical threshold voltage shift in aggressively scaled MOSFETs with ultrathin gate oxides
Nagaoka ferromagnetism observed in a quantum dot plaquette
Engineered, highly-controllable quantum systems hold promise as simulators of
emergent physics beyond the capabilities of classical computers. An important
problem in many-body physics is itinerant magnetism, which originates purely
from long-range interactions of free electrons and whose existence in real
systems has been subject to debate for decades. Here we use a quantum simulator
consisting of a four-site square plaquette of quantum dots to demonstrate
Nagaoka ferromagnetism. This form of itinerant magnetism has been rigorously
studied theoretically but has remained unattainable in experiment. We load the
plaquette with three electrons and demonstrate the predicted emergence of
spontaneous ferromagnetic correlations through pairwise measurements of spin.
We find the ferromagnetic ground state is remarkably robust to engineered
disorder in the on-site potentials and can induce a transition to the low-spin
state by changing the plaquette topology to an open chain. This demonstration
of Nagaoka ferromagnetism highlights that quantum simulators can be used to
study physical phenomena that have not yet been observed in any system before.
The work also constitutes an important step towards large-scale quantum dot
simulators of correlated electron systems.Comment: This version: main (8 pages, 6 figures) + supplementary (15 pages, 8
figures
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