Circuit and Architecture Co-Design of STT-RAM for High Performance and Low Energy

Spin-Transfer Torque Random Access Memory (STT-RAM) has been proved a promising emerging nonvolatile memory technology suitable for many applications such as cache mem- ory of CPU. Compared with other conventional memory technology, STT-RAM offers many attractive features such as nonvolatility, fast random access speed and extreme low leakage power. However, STT-RAM is still facing many challenges. First of all, programming STT-RAM is a stochastic process due to random thermal fluctuations, so the write errors are hard to avoid. Secondly, the existing STT-RAM cell designs can be used for only single-port accesses, which limits the memory access bandwidth and constraints the system performance. Finally, while other memory technology supports multi-level cell (MLC) design to boost the storage density, adopting MLC to STT-RAM brings many disadvantages such as requirement for large transistor and low access speed. In this work, we proposed solutions on both circuit and architecture level to address these challenges. For the write error issues, we proposed two probabilistic methods, namely write-verify- rewrite with adaptive period (WRAP) and verify-one-while-writing (VOW), for performance improvement and write failure reduction. For dual-port solution, we propose the design methods to support dual-port accesses for STT-RAM. The area increment by introducing an additional port is reduced by leveraging the shared source-line structure. Detailed analysis on the performance/reliability degrada- tion caused by dual-port accesses is performed, and the corresponding design optimization is provided. To unleash the potential of MLC STT-RAM cache, we proposed a new design through a cross-layer co-optimization. The memory cell structure integrated the reversed stacking of magnetic junction tunneling (MTJ) for a more balanced device and design trade-off. In architecture development, we presented an adaptive mode switching mechanism: based on application’s memory access behavior, the MLC STT-RAM cache can dynamically change between low latency SLC mode and high capacity MLC mode. Finally, we present a 4Kb test chip design which can support different types and sizes of MTJs. A configurable sensing solution is used in the test chip so that it can support wide range of MTJ resistance. Such test chip design can help to evaluate various type of MTJs in the future

Energy-Aware Data Movement In Non-Volatile Memory Hierarchies

While technology scaling enables increased density for memory cells, the intrinsic high leakage power of conventional CMOS technology and the demand for reduced energy consumption inspires the use of emerging technology alternatives such as eDRAM and Non-Volatile Memory (NVM) including STT-MRAM, PCM, and RRAM. The utilization of emerging technology in Last Level Cache (LLC) designs which occupies a signifcant fraction of total die area in Chip Multi Processors (CMPs) introduces new dimensions of vulnerability, energy consumption, and performance delivery. To be specific, a part of this research focuses on eDRAM Bit Upset Vulnerability Factor (BUVF) to assess vulnerable portion of the eDRAM refresh cycle where the critical charge varies depending on the write voltage, storage and bit-line capacitance. This dissertation broaden the study on vulnerability assessment of LLC through investigating the impact of Process Variations (PV) on narrow resistive sensing margins in high-density NVM arrays, including on-chip cache and primary memory. Large-latency and power-hungry Sense Amplifers (SAs) have been adapted to combat PV in the past. Herein, a novel approach is proposed to leverage the PV in NVM arrays using Self-Organized Sub-bank (SOS) design. SOS engages the preferred SA alternative based on the intrinsic as-built behavior of the resistive sensing timing margin to reduce the latency and power consumption while maintaining acceptable access time. On the other hand, this dissertation investigates a novel technique to prioritize the service to 1) Extensive Read Reused Accessed blocks of the LLC that are silently dropped from higher levels of cache, and 2) the portion of the working set that may exhibit distant re-reference interval in L2. In particular, we develop a lightweight Multi-level Access History Profiler to effciently identify ERRA blocks through aggregating the LLC block addresses tagged with identical Most Signifcant Bits into a single entry. Experimental results indicate that the proposed technique can reduce the L2 read miss ratio by 51.7% on average across PARSEC and SPEC2006 workloads. In addition, this dissertation will broaden and apply advancements in theories of subspace recovery to pioneer computationally-aware in-situ operand reconstruction via the novel Logic In Interconnect (LI2) scheme. LI2 will be developed, validated, and re?ned both theoretically and experimentally to realize a radically different approach to post-Moore\u27s Law computing by leveraging low-rank matrices features offering data reconstruction instead of fetching data from main memory to reduce energy/latency cost per data movement. We propose LI2 enhancement to attain high performance delivery in the post-Moore\u27s Law era through equipping the contemporary micro-architecture design with a customized memory controller which orchestrates the memory request for fetching low-rank matrices to customized Fine Grain Reconfigurable Accelerator (FGRA) for reconstruction while the other memory requests are serviced as before. The goal of LI2 is to conquer the high latency/energy required to traverse main memory arrays in the case of LLC miss, by using in-situ construction of the requested data dealing with low-rank matrices. Thus, LI2 exchanges a high volume of data transfers with a novel lightweight reconstruction method under specific conditions using a cross-layer hardware/algorithm approach

Architectural Techniques for Multi-Level Cell Phase Change Memory Based Main Memory

Phase change memory (PCM) recently has emerged as a promising technology to meet the fast growing demand for large capacity main memory in modern computing systems. Multi-level cell (MLC) PCM storing multiple bits in a single cell offers high density with low per-byte fabrication cost. However, PCM suffers from long write latency, short cell endurance, limited write throughput and high peak power, which makes it challenging to be integrated in the memory hierarchy. To address the long write latency, I propose write truncation to reduce the number of write iterations with the assistance of an extra error correction code (ECC). I also propose form switch (FS) to reduce the storage overhead of the ECC. By storing highly compressible lines in single level cell (SLC) form, FS improves read latency as well. To attack the short cell endurance and large peak power, I propose elastic RESET (ER) to construct triple-level cell PCM. By reducing RESET energy, ER significantly reduces peak power and prolongs PCM lifetime. To improve the write concurrency, I propose fine-grained write power budgeting (FPB) observing a global power budget and regulates power across write iterations according to the step-down power demand of each iteration. A global charge pump is also integrated onto a DIMM to boost power for hot PCM chips while staying within the global power budget. To further reduce the peak power, I propose intra-write RESET scheduling distributing cell RESET initializations in the whole write operation duration, so that the on-chip charge pump size can also be reduced

Shared Resource Management for Non-Volatile Asymmetric Memory

Non-volatile memory (NVM), such as Phase-Change Memory (PCM), is a promising energy-efficient candidate to replace DRAM. It is desirable because of its non-volatility, good scalability and low idle power. NVM, nevertheless, faces important challenges. The main problems are: writes are much slower and more power hungry than reads and write bandwidth is much lower than read bandwidth. Hybrid main memory architecture, which consists of a large NVM and a small DRAM, may become a solution for architecting NVM as main memory. Adding an extra layer of cache mitigates the drawbacks of NVM writes. However, writebacks from the last-level cache (LLC) might still (a) overwhelm the limited NVM write bandwidth and stall the application, (b) shorten lifetime and (c) increase energy consumption. Effectively utilizing shared resources, such as the last-level cache and the memory bandwidth, is crucial to achieving high performance for multi-core systems. No existing cache and bandwidth allocation scheme exploits the read/write asymmetry property, which is fundamental in NVM. This thesis tries to consider the asymmetry property in partitioning the cache and memory bandwidth for NVM systems. The thesis proposes three writeback-aware schemes to manage the resources in NVM systems. First, a runtime mechanism, Writeback-aware Cache Partitioning (WCP), is proposed to partition the shared LLC among multiple applications. Unlike past partitioning schemes, WCP considers the reduction in cache misses as well as writebacks. Second, a new runtime mechanism, Writeback-aware Bandwidth Partitioning (WBP), partitions NVM service cycles among applications. WBP uses a bandwidth partitioning weight to reflect the importance of writebacks (in addition to LLC misses) to bandwidth allocation. A companion Dynamic Weight Adjustment scheme dynamically selects the cache partitioning weight to maximize system performance. Third, Unified Writeback-aware Partitioning (UWP) partitions the last-level cache and the memory bandwidth cooperatively. UWP can further improve the system performance by considering the interaction of cache partitioning and bandwidth partitioning. The three proposed schemes improve system performance by considering the unique read/write asymmetry property of NVM

Studies in Exascale Computer Architecture: Interconnect, Resiliency, and Checkpointing

Today’s supercomputers are built from the state-of-the-art components to extract as much performance as possible to solve the most computationally intensive problems in the world. Building the next generation of exascale supercomputers, however, would require re-architecting many of these components to extract over 50x more performance than the current fastest supercomputer in the United States. To contribute towards this goal, two aspects of the compute node architecture were examined in this thesis: the on-chip interconnect topology and the memory and storage checkpointing platforms. As a first step, a skeleton exascale system was modeled to meet 1 exaflop of performance along with 100 petabytes of main memory. The model revealed that large kilo-core processors would be necessary to meet the exaflop performance goal; existing topologies, however, would not scale to those levels. To address this new challenge, we investigated and proposed asymmetric high-radix topologies that decoupled local and global communications and used different radix routers for switching network traffic at each level. The proposed topologies scaled more readily to higher numbers of cores with better latency and energy consumption than before. The vast number of components that the model revealed would be needed in these exascale systems cautioned towards better fault tolerance mechanisms. To address this challenge, we showed that local checkpoints within the compute node can be saved to a hybrid DRAM and SSD platform in order to write them faster without wearing out the SSD or consuming a lot of energy. A hybrid checkpointing platform allowed more frequent checkpoints to be made without sacrificing performance. Subsequently, we proposed switching to a DIMM-based SSD in order to perform fine-grained I/O operations that would be integral in interleaving checkpointing and computation while still providing persistence guarantees. Two more techniques that consolidate and overlap checkpointing were designed to better hide the checkpointing latency to the SSD.PHDComputer Science & EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/137096/1/sabeyrat_1.pd

Bit-Flip Aware Data Structures for Phase Change Memory

Big, non-volatile, byte-addressable, low-cost, and fast non-volatile memories like Phase Change Memory are appearing in the marketplace. They have the capability to unify both memory and storage and allow us to rethink the present memory hierarchy. An important draw-back to Phase Change Memory is limited write-endurance. In addition, Phase Change Memory shares with other Non-Volatile Random Access Memories an asym- metry in the energy costs of writes and reads. Best use of Non-Volatile Random Access Memories limits the number of times a Non-Volatile Random Access Memory cell changes contents, called a bit-flip. While the future of main memory is still unknown, we should already start to create data structures for them in order to shape the future era. This thesis investigates the creation of bit-flip aware data structures.The thesis first considers general ways in which a data structure can save bit- flips by smart overwrites and by using the exclusive-or of pointers. It then shows how a simple content dependent encoding can reduce bit-flips for web corpora. It then shows how to build hash based dictionary structures for Linear Hashing and Spiral Storage. Finally, the thesis presents Gray counters, close to bit-flip optimal counters that even enable age- based wear leveling with counters managed by the Non-Volatile Random Access Memories themselves instead of by the Operating Systems

A DATA AWARE APPROACH TO SALVAGE THE ENDURANCE OF PHASE-CHANGE MEMORY

Phase Change Memory (PCM) is an emerging non-volatile memory technology that could either replace or augment DRAM and NAND flash that are hindered by scalability challenges. PCM suffers from a limited endurance problem that needs to be alleviated before it can be endorsed into the memory stack. This thesis is based on the observation that the endurance problem and its ramification depend on the write data. Accordingly, a data-aware approach is applied to salvage the endurance of PCM at three different stages: pre-write fault avoidance, post-write fault tolerance and post-failure recovery. The pre-write fault avoidance stage aims at reducing the endurance cost of servicing write requests. To this end, Cost Aware Flip Optimization (CAFO) is presented as an efficient technique to lessen the endurance degradation. Essentially, CAFO relies on a cost model that captures the endurance cost of programming memory cells based on their already stored values. Subsequently,the write data is encoded into a form that incurs a lower endurance cost than the original write data. Overall, CAFO is capable of reducing the endurance cost by up to 65% more than the existing schemes. Worn out PCM cells exhibit a stuck-at fault model which makes the manifestation of errors dependent on the values that cells are stuck at. When a write fails, the data is rewritten inverted. This dissertation shows that applying data inversion at the post-write fault tolerance stage exploits the data dependent nature of errors which enables ECCs to tolerate faults up to double their nominal capability. Furthermore, extensions to RDIS which is an ECC designed specifically for the stuck-at fault model are presented. At the post-failure recovery stage, Data Dependent Sparing is presented to manage bad blocks in PCM. Departing from the observation that defective blocks in the context of the stuck-at fault model still exhibit a low write failure probability due to the data dependent nature of errors, this thesis takes the approach of reusing blocks that are defective yet better-than-bad through a dynamic management of the reserve spare space. Data Dependent Sparing is capable of increasing the lifetime of PCM by up to 18%

Dependable Embedded Systems

This Open Access book introduces readers to many new techniques for enhancing and optimizing reliability in embedded systems, which have emerged particularly within the last five years. This book introduces the most prominent reliability concerns from today’s points of view and roughly recapitulates the progress in the community so far. Unlike other books that focus on a single abstraction level such circuit level or system level alone, the focus of this book is to deal with the different reliability challenges across different levels starting from the physical level all the way to the system level (cross-layer approaches). The book aims at demonstrating how new hardware/software co-design solution can be proposed to ef-fectively mitigate reliability degradation such as transistor aging, processor variation, temperature effects, soft errors, etc. Provides readers with latest insights into novel, cross-layer methods and models with respect to dependability of embedded systems; Describes cross-layer approaches that can leverage reliability through techniques that are pro-actively designed with respect to techniques at other layers; Explains run-time adaptation and concepts/means of self-organization, in order to achieve error resiliency in complex, future many core systems

Bridging the Gap between Application and Solid-State-Drives

Data storage is one of the important and often critical parts of the computing system in terms of performance, cost, reliability, and energy. Numerous new memory technologies, such as NAND flash, phase change memory (PCM), magnetic RAM (STT-RAM) and Memristor, have emerged recently. Many of them have already entered the production system. Traditional storage optimization and caching algorithms are far from optimal because storage I/Os do not show simple locality. To provide optimal storage we need accurate predictions of I/O behavior. However, the workloads are increasingly dynamic and diverse, making the long and short time I/O prediction challenge. Because of the evolution of the storage technologies and the increasing diversity of workloads, the storage software is becoming more and more complex. For example, Flash Translation Layer (FTL) is added for NAND-flash based Solid State Disks (NAND-SSDs). However, it introduces overhead such as address translation delay and garbage collection costs. There are many recent studies aim to address the overhead. Unfortunately, there is no one-size-fits-all solution due to the variety of workloads. Despite rapidly evolving in storage technologies, the increasing heterogeneity and diversity in machines and workloads coupled with the continued data explosion exacerbate the gap between computing and storage speeds. In this dissertation, we improve the data storage performance from both top-down and bottom-up approach. First, we will investigate exposing the storage level parallelism so that applications can avoid I/O contentions and workloads skew when scheduling the jobs. Second, we will study how architecture aware task scheduling can improve the performance of the application when PCM based NVRAM are equipped. Third, we will develop an I/O correlation aware flash translation layer for NAND-flash based Solid State Disks. Fourth, we will build a DRAM-based correlation aware FTL emulator and study the performance in various filesystems