Fault and Defect Tolerant Computer Architectures: Reliable Computing With Unreliable Devices

This research addresses design of a reliable computer from unreliable device technologies. A system architecture is developed for a fault and defect tolerant (FDT) computer. Trade-offs between different techniques are studied and yield and hardware cost models are developed. Fault and defect tolerant designs are created for the processor and the cache memory. Simulation results for the content-addressable memory (CAM)-based cache show 90% yield with device failure probabilities of 3 x 10(-6), three orders of magnitude better than non fault tolerant caches of the same size. The entire processor achieves 70% yield with device failure probabilities exceeding 10(-6). The required hardware redundancy is approximately 15 times that of a non-fault tolerant design. While larger than current FT designs, this architecture allows the use of devices much more likely to fail than silicon CMOS. As part of model development, an improved model is derived for NAND Multiplexing. The model is the first accurate model for small and medium amounts of redundancy. Previous models are extended to account for dependence between the inputs and produce more accurate results

Efficient scrub mechanisms for error-prone emerging memories

Journal ArticleMany memory cell technologies are being considered as possible replacements for DRAM and Flash technologies, both of which are nearing their scaling limits. While these new cells (PCM, STT-RAM, FeRAM, etc.) promise high density, better scaling, and non-volatility, they introduce new challenges. Solutions at the architecture level can help address some of these problems; e.g., prior re-search has proposed wear-leveling and hard error tolerance mechanisms to overcome the limited write endurance of PCM cells. In this paper, we focus on the soft error problem in PCM, a topic that has received little attention in the architecture community. Soft errors in DRAM memories are typically addressed by having SECDED support and a scrub mechanism. The scrub mechanism scans the memory looking for a single-bit error and corrects it be-fore the line experiences a second uncorrectable error. However, PCM (and other emerging memories) are prone to new sources of soft errors. In particular, multi-level cell (MLC) PCM devices will suffer from resistance drift, that increases the soft error rate and incurs high overheads for the scrub mechanism. This paper is the first to study the design of architectural scrub mechanisms, especially when tailored to the drift phenomenon in MLC PCM. Many of our solutions will also apply to other soft-error prone emerging memories. We first show that scrub overheads can be reduced with support for strong ECC codes and a lightweight error detection operation. We then design different scrub algorithms that can adaptively trade-off soft and hard errors. Using an approach that combines all proposed solutions, our scrub mechanism yields a 96.5% reduction in uncorrectable errors, a 24.4 × decrease in scrub-related writes, and a 37.8% reduction in scrub energy, relative to a basic scrub algorithm used in modern DRAM systems

Design and Verification of a Dual Port RAM Using UVM Methodology

Data-intensive applications such as Deep Learning, Big Data, and Computer Vision have resulted in more demand for on-chip memory storage. Hence, state of the art Systems on Chips (SOCs) have a memory that occupies somewhere between 50% to 90 % of the die space. Extensive Research is being done in the field of memory technology to improve the efficiency of memory packaging. This effort has not always been successful because densely packed memory structures can experience defects during the fabrication process. Thus, it is critical to test the embedded memory modules once they are taped out. Along with testing, functional verification of a module makes sure that the design works the way it has been intended to perform. This paper proposes a built-in self-test (BIST) to validate a Dual Port Static RAM module and a complete layered test bench to verify the module’s operation functionally. The BIST has been designed using a finite state machine and has been targeted against most of the general SRAM faults in a given linear time constraint of O(23n). The layered test bench has been designed using Universal Verification Methodology (UVM), a standardized class library which has increased the re-usability and automation to the existing design verification language, SystemVerilog

Statistical analysis of Total Ionizing Dose response in 25-nm NAND Flash memory

Variabilità degli errori, ovvero bit flip, dovuti alla dose totale ionizzante (TID) in memorie Flash SLC da 25 nm. Più di 1 Terabit di celle è stato esposto a raggi gamma da Co-60 e sono stati misurati gli errori indotti dalla radiazione ionizzante. L'obiettivo della tesi è stato lo studio del comportamento delle memorie Flash nello spazio e prevederne l’affidabilità.ope

Flash Memory Devices

Flash memory devices have represented a breakthrough in storage since their inception in the mid-1980s, and innovation is still ongoing. The peculiarity of such technology is an inherent flexibility in terms of performance and integration density according to the architecture devised for integration. The NOR Flash technology is still the workhorse of many code storage applications in the embedded world, ranging from microcontrollers for automotive environment to IoT smart devices. Their usage is also forecasted to be fundamental in emerging AI edge scenario. On the contrary, when massive data storage is required, NAND Flash memories are necessary to have in a system. You can find NAND Flash in USB sticks, cards, but most of all in Solid-State Drives (SSDs). Since SSDs are extremely demanding in terms of storage capacity, they fueled a new wave of innovation, namely the 3D architecture. Today “3D” means that multiple layers of memory cells are manufactured within the same piece of silicon, easily reaching a terabit capacity. So far, Flash architectures have always been based on "floating gate," where the information is stored by injecting electrons in a piece of polysilicon surrounded by oxide. On the contrary, emerging concepts are based on "charge trap" cells. In summary, flash memory devices represent the largest landscape of storage devices, and we expect more advancements in the coming years. This will require a lot of innovation in process technology, materials, circuit design, flash management algorithms, Error Correction Code and, finally, system co-design for new applications such as AI and security enforcement

Resilience of an embedded architecture using hardware redundancy

In the last decade the dominance of the general computing systems market has being replaced by embedded systems with billions of units manufactured every year. Embedded systems appear in contexts where continuous operation is of utmost importance and failure can be profound. Nowadays, radiation poses a serious threat to the reliable operation of safety-critical systems. Fault avoidance techniques, such as radiation hardening, have been commonly used in space applications. However, these components are expensive, lag behind commercial components with regards to performance and do not provide 100% fault elimination. Without fault tolerant mechanisms, many of these faults can become errors at the application or system level, which in turn, can result in catastrophic failures. In this work we study the concepts of fault tolerance and dependability and extend these concepts providing our own definition of resilience. We analyse the physics of radiation-induced faults, the damage mechanisms of particles and the process that leads to computing failures. We provide extensive taxonomies of 1) existing fault tolerant techniques and of 2) the effects of radiation in state-of-the-art electronics, analysing and comparing their characteristics. We propose a detailed model of faults and provide a classification of the different types of faults at various levels. We introduce an algorithm of fault tolerance and define the system states and actions necessary to implement it. We introduce novel hardware and system software techniques that provide a more efficient combination of reliability, performance and power consumption than existing techniques. We propose a new element of the system called syndrome that is the core of a resilient architecture whose software and hardware can adapt to reliable and unreliable environments. We implement a software simulator and disassembler and introduce a testing framework in combination with ERA’s assembler and commercial hardware simulators

Doctor of Philosophy in Computing

dissertatio

LOT-ECC: LOcalized and tiered reliability mechanisms for commodity memory systems

pre-printMemory system reliability is a serious and growing concern in modern servers. Existing chipkill-level mem- ory protection mechanisms suffer from several draw- backs. They activate a large number of chips on ev- ery memory access - this increases energy consump- tion, and reduces performance due to the reduction in rank-level parallelism. Additionally, they increase ac- cess granularity, resulting in wasted bandwidth in the absence of sufficient access locality. They also restrict systems to use narrow-I/O x4 devices, which are known to be less energy-efficient than the wider x8 DRAM de- vices. In this paper, we present LOT-ECC, a local- ized and multi-tiered protection scheme that attempts to solve these problems. We separate error detection and error correction functionality, and employ simple checksum and parity codes effectively to provide strong fault-tolerance, while simultaneously simplifying imple- mentation. Data and codes are localized to the same DRAM row to improve access efficiency. We use sys- tem firmware to store correction codes in DRAM data memory and modify the memory controller to handle data mapping. We thus build an effective fault-tolerance mechanism that provides strong reliability guarantees, activates as few chips as possible (reducing power con- sumption by up to 44.8% and reducing latency by up to 46.9%), and reduces circuit complexity, all while work- ing with commodity DRAMs and operating systems. Fi- nally, we propose the novel concept of a heterogeneous DIMM that enables the extension of LOT-ECC to x16 and wider DRAM parts