284 research outputs found
Digital and analog TFET circuits: Design and benchmark
In this work, we investigate by means of simulations the performance of basic digital, analog, and mixed-signal circuits employing tunnel-FETs (TFETs). The analysis reviews and complements our previous papers on these topics. By considering the same devices for all the analysis, we are able to draw consistent conclusions for a wide variety of circuits. A virtual complementary TFET technology consisting of III-V heterojunction nanowires is considered. Technology Computer Aided Design (TCAD) models are calibrated against the results of advanced full-quantum simulation tools and then used to generate look-up-tables suited for circuit simulations. The virtual complementary TFET technology is benchmarked against predictive technology models (PTM) of complementary silicon FinFETs for the 10 nm node over a wide range of supply voltages (VDD) in the sub-threshold voltage domain considering the same footprint between the vertical TFETs and the lateral FinFETs and the same static power. In spite of the asymmetry between p- and n-type transistors, the results show clear advantages of TFET technology over FinFET for VDDlower than 0.4 V. Moreover, we highlight how differences in the I-V characteristics of FinFETs and TFETs suggest to adapt the circuit topologies used to implement basic digital and analog blocks with respect to the most common CMOS solutions
Digital and analog TFET circuits: Design and benchmark
In this work, we investigate by means of simulations the performance of basic digital, analog, and mixed-signal circuits employing tunnel-FETs (TFETs). The analysis reviews and complements our previous papers on these topics. By considering the same devices for all the analysis, we are able to draw consistent conclusions for a wide variety of circuits. A virtual complementary TFET technology consisting of III-V heterojunction nanowires is considered. Technology Computer Aided Design (TCAD) models are calibrated against the results of advanced full-quantum simulation tools and then used to generate look-up-tables suited for circuit simulations. The virtual complementary TFET technology is benchmarked against predictive technology models (PTM) of complementary silicon FinFETs for the 10 nm node over a wide range of supply voltages (VDD) in the sub-threshold voltage domain considering the same footprint between the vertical TFETs and the lateral FinFETs and the same static power. In spite of the asymmetry between p- and n-type transistors, the results show clear advantages of TFET technology over FinFET for VDDlower than 0.4 V. Moreover, we highlight how differences in the I-V characteristics of FinFETs and TFETs suggest to adapt the circuit topologies used to implement basic digital and analog blocks with respect to the most common CMOS solutions
Aeronautical Engineering: A special bibliography with indexes, supplement 55
This bibliography lists 260 reports, articles, and other documents introduced into the NASA scientific and technical information system in February 1975
Local Epitaxial Overgrowth for Stacked Complementary MOS Transistor Pairs
A three-dimensional silicon processing technology for CMOS circuits was developed and characterized. The first fully depleted SOI devices with individually biasable gates on both sides of the silicon film were realized. A vertically stacked CMOS Inverter built by lateral overgrowth was reported for the first time. Nucleation-free epitaxial lateral overgrowth of silicon over thin oxides was developed for both a pancake and a barrel-type epitaxy reactor: This process was optimized to limit damage to gate oxides and minimize dopant diffusion within the Substrate. Autodoping from impurities of the MOS transistors built in the substrate was greatly reduced. A planarisation technique was developed to reduce the silicon film thickness from 13ÎĽm to below 0.5ÎĽm for full depletion. Chemo-mechanical polishing was modified to yield an automatic etch stop with the corresponding control and uniformity of the silicon film. The resulting wafer topography is more planar than in a conventional substrate CMOS process. PMOS transistors which match the current drive of bulk NM0S devices of equal geometry were characterized, despite the three-times lower hole mobility. Devices realized in the substrate, at the bottom and on top of the SOI film were essentially indistinguishable from bulk devices. A novel device with two insulated gates controlling the same channel was characterized. Inverters were realized both as joint-gate configuration and with symmetric performance of n- and p-channel. These circuits were realized in the area of a single NMOS transistor
Low-frequency noise in downscaled silicon transistors: Trends, theory and practice
By the continuing downscaling of sub-micron transistors in the range of few to one deca-nanometers, we focus on the increasing relative level of the low-frequency noise in these devices. Large amount of published data and models are reviewed and summarized, in order to capture the state-of-the-art, and to observe that the 1/area scaling of low-frequency noise holds even for carbon nanotube devices, but the noise becomes too large in order to have fully deterministic devices with area less than 10nm×10nm. The low-frequency noise models are discussed from the point of view that the noise can be both intrinsic and coupled to the charge transport in the devices, which provided a coherent picture, and more interestingly, showed that the models converge each to other, despite the many issues that one can find for the physical origin of each model. Several derivations are made to explain crossovers in noise spectra, variable random telegraph amplitudes, duality between energy and distance of charge traps, behaviors and trends for figures of merit by device downscaling, practical constraints for micropower amplifiers and dependence of phase noise on the harmonics in the oscillation signal, uncertainty and techniques of averaging by noise characterization. We have also shown how the unavoidable statistical variations by fabrication is embedded in the devices as a spatial “frozen noise”, which also follows 1/area scaling law and limits the production yield, from one side, and from other side, the “frozen noise” contributes generically to temporal 1/f noise by randomly probing the embedded variations during device operation, owing to the purely statistical accumulation of variance that follows from cause-consequence principle, and irrespectively of the actual physical process. The accumulation of variance is known as statistics of “innovation variance”, which explains the nearly log-normal distributions in the values for low-frequency noise parameters gathered from different devices, bias and other conditions, thus, the origin of geometric averaging in low-frequency noise characterizations. At present, the many models generally coincide each with other, and what makes the difference, are the values, which, however, scatter prominently in nanodevices. Perhaps, one should make some changes in the approach to the low-frequency noise in electronic devices, to emphasize the “statistics behind the numbers”, because the general physical assumptions in each model always fail at some point by the device downscaling, but irrespectively of that, the statistics works, since the low-frequency noise scales consistently with the 1/area law
Miniaturized Transistors, Volume II
In this book, we aim to address the ever-advancing progress in microelectronic device scaling. Complementary Metal-Oxide-Semiconductor (CMOS) devices continue to endure miniaturization, irrespective of the seeming physical limitations, helped by advancing fabrication techniques. We observe that miniaturization does not always refer to the latest technology node for digital transistors. Rather, by applying novel materials and device geometries, a significant reduction in the size of microelectronic devices for a broad set of applications can be achieved. The achievements made in the scaling of devices for applications beyond digital logic (e.g., high power, optoelectronics, and sensors) are taking the forefront in microelectronic miniaturization. Furthermore, all these achievements are assisted by improvements in the simulation and modeling of the involved materials and device structures. In particular, process and device technology computer-aided design (TCAD) has become indispensable in the design cycle of novel devices and technologies. It is our sincere hope that the results provided in this Special Issue prove useful to scientists and engineers who find themselves at the forefront of this rapidly evolving and broadening field. Now, more than ever, it is essential to look for solutions to find the next disrupting technologies which will allow for transistor miniaturization well beyond silicon’s physical limits and the current state-of-the-art. This requires a broad attack, including studies of novel and innovative designs as well as emerging materials which are becoming more application-specific than ever before
Testing and Characterization of Silicon Devices at Cryogenic Temperatures
Satellite and space exploration applications require electronics which are capable of operation at extremely low temperatures (T<40K). Low temperature device models are essential for the design of circuits operating in these extreme environments. To address these needs, a helium Dewar test setup has been constructed and used to evaluate several MOSFET devices, a bipolar device, and a tunneling structure. The temperature dependent performance of each has been characterized down to 20K and, in some cases, as low as 4K. Complete voltage and temperature dependent MOSFET characteristics have led to the development of a simulator which predicts device performance at cryogenic temperatures. A tunneling structure has demonstrated comparable low temperature voltage reference performance to that of a silicon germanium voltage reference circuit
Design of Discrete-time Chaos-Based Systems for Hardware Security Applications
Security of systems has become a major concern with the advent of technology. Researchers are proposing new security solutions every day in order to meet the area, power and performance specifications of the systems. The additional circuit required for security purposes can consume significant area and power. This work proposes a solution which utilizes discrete-time chaos-based logic gates to build a system which addresses multiple hardware security issues. The nonlinear dynamics of chaotic maps is leveraged to build a system that mitigates IC counterfeiting, IP piracy, overbuilding, disables hardware Trojan insertion and enables authentication of connecting devices (such as IoT and mobile). Chaos-based systems are also used to generate pseudo-random numbers for cryptographic applications.The chaotic map is the building block for the design of discrete-time chaos-based oscillator. The analog output of the oscillator is converted to digital value using a comparator in order to build logic gates. The logic gate is reconfigurable since different parameters in the circuit topology can be altered to implement multiple Boolean functions using the same system. The tuning parameters are control input, bifurcation parameter, iteration number and threshold voltage of the comparator. The proposed system is a hybrid between standard CMOS logic gates and reconfigurable chaos-based logic gates where original gates are replaced by chaos-based gates. The system works in two modes: logic locking and authentication. In logic locking mode, the goal is to ensure that the system achieves logic obfuscation in order to mitigate IC counterfeiting. The secret key for logic locking is made up of the tuning parameters of the chaotic oscillator. Each gate has 10-bit key which ensures that the key space is large which exponentially increases the computational complexity of any attack. In authentication mode, the aim of the system is to provide authentication of devices so that adversaries cannot connect to devices to learn confidential information. Chaos-based computing system is susceptible to process variation which can be leveraged to build a chaos-based PUF. The proposed system demonstrates near ideal PUF characteristics which means systems with large number of primary outputs can be used for authenticating devices
Advances in Solid State Circuit Technologies
This book brings together contributions from experts in the fields to describe the current status of important topics in solid-state circuit technologies. It consists of 20 chapters which are grouped under the following categories: general information, circuits and devices, materials, and characterization techniques. These chapters have been written by renowned experts in the respective fields making this book valuable to the integrated circuits and materials science communities. It is intended for a diverse readership including electrical engineers and material scientists in the industry and academic institutions. Readers will be able to familiarize themselves with the latest technologies in the various fields
Hybrid MOS and Single-Electron Transistor Architectures towards Arithmetic Applications
Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and Single-Electron Transistor (SET) hybrid architectures, which combine the merits of both MOSFET and SET, promise to be a practical implementation for nanometer-scale circuit design. In this thesis, we design arithmetic circuits, including adders and multipliers, using SET/MOS hybrid architectures with the goal of reducing circuit area and power dissipation and improving circuit reliability. Thanks to the Coulomb blockade oscillation characteristic of SET, the design of SET/MOS hybrid adders becomes very simple, and requires only a few transistors by using the proposed schemes of multiple-valued logic (MVL), phase modulation, and frequency modulation. The phase and frequency modulation schemes are also utilized for the design of multipliers. Two types of SET/MOS hybrid multipliers are presented in this thesis. One is the binary tree multiplier which adopts conventional tree structures with multi-input counters (or compressors) implemented with the phase modulation scheme. Compared to conventional CMOS tree multipliers, the area and power dissipation of the proposed multiplier are reduced by half. The other is the frequency modulated multiplier following a novel design methodology where the information is processed in the frequency domain. In this context, we explore the implicit frequency properties of SET, including both frequency gain and frequency mixing. The major merits of this type of multiplier include: a) simplicity of circuit structure, and b) high immunity against background charges within SET islands. Background charges are mainly induced by defects or impurities located within the oxide barriers, and cannot be entirely removed by today\u27s technology. Since these random charges deteriorate the circuit reliability, we investigate different circuit solutions, such as feedback structure and frequency modulation, in order to counteract this problem. The feedback represents an error detection and correction mechanism which offsets the background charge effect by applying an appropriate voltage through an additional gate of SET. The frequency modulation, on the other hand, exploits the fact that background charges only shift the phase of Coulomb blockade oscillation without changing its amplitude and periodicity. Therefore, SET/MOS hybrid adders and multipliers using the frequency modulation scheme exhibit the high immunity against these undesired charges
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