Dielectric relaxation and Charge trapping characteristics study in Germanium based MOS devices with HfO2 /Dy2O3 gate stacks

In the present work we investigate the dielectric relaxation effects and charge trapping characteristics of HfO2 /Dy2O3 gate stacks grown on Ge substrates. The MOS devices have been subjected to constant voltage stress (CVS) conditions at accumulation and show relaxation effects in the whole range of applied stress voltages. Applied voltage polarities as well as thickness dependence of the relaxation effects have been investigated. Charge trapping is negligible at low stress fields while at higher fields (>4MV/cm) it becomes significant. In addition, we give experimental evidence that in tandem with the dielectric relaxation effect another mechanism- the so-called Maxwell-Wagner instability- is present and affects the transient current during the application of a CVS pulse. This instability is also found to be field dependent thus resulting in a trapped charge which is negative at low stress fields but changes to positive at higher fields.Comment: 27pages, 10 figures, 3 tables, regular journal contribution (accepted in IEEE TED, Vol.50, issue 10

Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates

We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrates. Metal-Oxide-Semiconductor (MOS) devices with these stacks,show dissimilar charge trapping phenomena under varying levels of Constant- Voltage-Stress (CVS) conditions, which also influences the measured densities of the interface (Nit) and border (NBT) traps. In the present study we also report on C-Vg hysteresis curves related to Nit and NBT. We also propose a new model based on Maxwell-Wagner instabilities mechanism that explains the dielectric degradations (current decay transient behavior) of the gate stack devices grown on high mobility substrates under CVS bias from low to higher fields, and which is unlike to those used for other MOS devices. Finally, the time dependent degradation of the corresponding devices revealed an initial current decay due to relaxation, followed by charge trapping and generation of stress-induced leakage which eventually lead to hard breakdown after long CVS stressing.Comment: 19pages (double space), 7 figures, original research article, Submitted to JAP (AIP

Review of recent research towards power cable life cycle management

Power cables are integral to modern urban power transmission and distribution systems. For power cable asset managers worldwide, a major challenge is how to manage effectively the expensive and vast network of cables, many of which are approaching, or have past, their design life. This study provides an in-depth review of recent research and development in cable failure analysis, condition monitoring and diagnosis, life assessment methods, fault location, and optimisation of maintenance and replacement strategies. These topics are essential to cable life cycle management (LCM), which aims to maximise the operational value of cable assets and is now being implemented in many power utility companies. The review expands on material presented at the 2015 JiCable conference and incorporates other recent publications. The review concludes that the full potential of cable condition monitoring, condition and life assessment has not fully realised. It is proposed that a combination of physics-based life modelling and statistical approaches, giving consideration to practical condition monitoring results and insulation response to in-service stress factors and short term stresses, such as water ingress, mechanical damage and imperfections left from manufacturing and installation processes, will be key to success in improved LCM of the vast amount of cable assets around the world

Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS

In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped HfO2 layers with an equivalent oxide thickness of 8Å. The layers show maximum operating voltages in excess of 1V. Such high reliability can be attributed to very high Weibull slopes. We examine the origin of the high slopes by a detailed study of the evolution of the stress induced leakage current with time, temperature and stress voltage