Advanced software techniques for space shuttle data management systems Final report

Airborne/spaceborn computer design and techniques for space shuttle data management system

Gestión de jerarquías de memoria híbridas a nivel de sistema

Tesis inédita de la Universidad Complutense de Madrid, Facultad de Informática, Departamento de Arquitectura de Computadoras y Automática y de Ku Leuven, Arenberg Doctoral School, Faculty of Engineering Science, leída el 11/05/2017.In electronics and computer science, the term ‘memory’ generally refers to devices that are used to store information that we use in various appliances ranging from our PCs to all hand-held devices, smart appliances etc. Primary/main memory is used for storage systems that function at a high speed (i.e. RAM). The primary memory is often associated with addressable semiconductor memory, i.e. integrated circuits consisting of silicon-based transistors, used for example as primary memory but also other purposes in computers and other digital electronic devices. The secondary/auxiliary memory, in comparison provides program and data storage that is slower to access but offers larger capacity. Examples include external hard drives, portable flash drives, CDs, and DVDs. These devices and media must be either plugged in or inserted into a computer in order to be accessed by the system. Since secondary storage technology is not always connected to the computer, it is commonly used for backing up data. The term storage is often used to describe secondary memory. Secondary memory stores a large amount of data at lesser cost per byte than primary memory; this makes secondary storage about two orders of magnitude less expensive than primary storage. There are two main types of semiconductor memory: volatile and nonvolatile. Examples of non-volatile memory are ‘Flash’ memory (sometimes used as secondary, sometimes primary computer memory) and ROM/PROM/EPROM/EEPROM memory (used for firmware such as boot programs). Examples of volatile memory are primary memory (typically dynamic RAM, DRAM), and fast CPU cache memory (typically static RAM, SRAM, which is fast but energy-consuming and offer lower memory capacity per are a unit than DRAM). Non-volatile memory technologies in Si-based electronics date back to the 1990s. Flash memory is widely used in consumer electronic products such as cellphones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. The rapid increase of leakage currents in Silicon CMOS transistors with scaling poses a big challenge for the integration of SRAM memories. There is also the case of susceptibility to read/write failure with low power schemes. As a result of this, over the past decade, there has been an extensive pooling of time, resources and effort towards developing emerging memory technologies like Resistive RAM (ReRAM/RRAM), STT-MRAM, Domain Wall Memory and Phase Change Memory(PRAM). Emerging non-volatile memory technologies promise new memories to store more data at less cost than the expensive-to build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. These new memory technologies combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the non-volatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. The research and information on these Non-Volatile Memory (NVM) technologies has matured over the last decade. These NVMs are now being explored thoroughly nowadays as viable replacements for conventional SRAM based memories even for the higher levels of the memory hierarchy. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional(3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years...En el campo de la informática, el término ‘memoria’ se refiere generalmente a dispositivos que son usados para almacenar información que posteriormente será usada en diversos dispositivos, desde computadoras personales (PC), móviles, dispositivos inteligentes, etc. La memoria principal del sistema se utiliza para almacenar los datos e instrucciones de los procesos que se encuentre en ejecución, por lo que se requiere que funcionen a alta velocidad (por ejemplo, DRAM). La memoria principal está implementada habitualmente mediante memorias semiconductoras direccionables, siendo DRAM y SRAM los principales exponentes. Por otro lado, la memoria auxiliar o secundaria proporciona almacenaje(para ficheros, por ejemplo); es más lenta pero ofrece una mayor capacidad. Ejemplos típicos de memoria secundaria son discos duros, memorias flash portables, CDs y DVDs. Debido a que estos dispositivos no necesitan estar conectados a la computadora de forma permanente, son muy utilizados para almacenar copias de seguridad. La memoria secundaria almacena una gran cantidad de datos aun coste menor por bit que la memoria principal, siendo habitualmente dos órdenes de magnitud más barata que la memoria primaria. Existen dos tipos de memorias de tipo semiconductor: volátiles y no volátiles. Ejemplos de memorias no volátiles son las memorias Flash (algunas veces usadas como memoria secundaria y otras veces como memoria principal) y memorias ROM/PROM/EPROM/EEPROM (usadas para firmware como programas de arranque). Ejemplos de memoria volátil son las memorias DRAM (RAM dinámica), actualmente la opción predominante a la hora de implementar la memoria principal, y las memorias SRAM (RAM estática) más rápida y costosa, utilizada para los diferentes niveles de cache. Las tecnologías de memorias no volátiles basadas en electrónica de silicio se remontan a la década de1990. Una variante de memoria de almacenaje por carga denominada como memoria Flash es mundialmente usada en productos electrónicos de consumo como telefonía móvil y reproductores de música mientras NAND Flash solid state disks(SSDs) están progresivamente desplazando a los dispositivos de disco duro como principal unidad de almacenamiento en computadoras portátiles, de escritorio e incluso en centros de datos. En la actualidad, hay varios factores que amenazan la actual predominancia de memorias semiconductoras basadas en cargas (capacitivas). Por un lado, se está alcanzando el límite de integración de las memorias Flash, lo que compromete su escalado en el medio plazo. Por otra parte, el fuerte incremento de las corrientes de fuga de los transistores de silicio CMOS actuales, supone un enorme desafío para la integración de memorias SRAM. Asimismo, estas memorias son cada vez más susceptibles a fallos de lectura/escritura en diseños de bajo consumo. Como resultado de estos problemas, que se agravan con cada nueva generación tecnológica, en los últimos años se han intensificado los esfuerzos para desarrollar nuevas tecnologías que reemplacen o al menos complementen a las actuales. Los transistores de efecto campo eléctrico ferroso (FeFET en sus siglas en inglés) se consideran una de las alternativas más prometedores para sustituir tanto a Flash (por su mayor densidad) como a DRAM (por su mayor velocidad), pero aún está en una fase muy inicial de su desarrollo. Hay otras tecnologías algo más maduras, en el ámbito de las memorias RAM resistivas, entre las que cabe destacar ReRAM (o RRAM), STT-RAM, Domain Wall Memory y Phase Change Memory (PRAM)...Depto. de Arquitectura de Computadores y AutomáticaFac. de InformáticaTRUEunpu

Improvement Energy Efficiency for a Hybrid Multibank Memory in Energy Critical Applications

High performance, low power multiprocessor/multibank memory system requires a compiler that provides efficient data partitioning and mapping procedures. This paper introduced two compiler techniques for the data mapping to multibank memory, since data mapping is still an open problem and needs a better solution. The multibank memory can be consisted of volatile and non-volatile memory components to support ultra-low powered wearable devices. This hybrid memory system including volatile and non-volatile memory components yields higher complexity to map data onto it. To efficiently solve this mapping problem, we formulate it to a simple decision problem. Based on the problem definition, we proposed two efficient algorithms to determine the placement of data to the multibank memory. The proposed techniques consider the characteristic of the non-volatile memory that its write operation consumes more energy than the same operation of a volatile memory even though it provides ultra-low operation power and nearly zero leakage current. The proposed technique solves this negative effect of non-volatile memory by using efficient data placement technique and hybrid memory architecture. In experimental section, the result shows that the proposed techniques improve energy saving up to 59.5% for the hybrid multibank memory architecture

Energy Saving Techniques for Phase Change Memory (PCM)

In recent years, the energy consumption of computing systems has increased and a large fraction of this energy is consumed in main memory. Towards this, researchers have proposed use of non-volatile memory, such as phase change memory (PCM), which has low read latency and power; and nearly zero leakage power. However, the write latency and power of PCM are very high and this, along with limited write endurance of PCM present significant challenges in enabling wide-spread adoption of PCM. To address this, several architecture-level techniques have been proposed. In this report, we review several techniques to manage power consumption of PCM. We also classify these techniques based on their characteristics to provide insights into them. The aim of this work is encourage researchers to propose even better techniques for improving energy efficiency of PCM based main memory.Comment: Survey, phase change RAM (PCRAM

An Efficient NVM based Architecture for Intermittent Computing under Energy Constraints

Battery-less technology evolved to replace battery technology. Non-volatile memory (NVM) based processors were explored to store the program state during a power failure. The energy stored in a capacitor is used for a backup during a power failure. Since the size of a capacitor is fixed and limited, the available energy in a capacitor is also limited and fixed. Thus, the capacitor energy is insufficient to store the entire program state during frequent power failures. This paper proposes an architecture that assures safe backup of volatile contents during a power failure under energy constraints. Using a proposed dirty block table (DBT) and writeback queue (WBQ), this work limits the number of dirty blocks in the L1 cache at any given time. We further conducted a set of experiments by varying the parameter sizes to help the user make appropriate design decisions concerning their energy requirements. The proposed architecture decreases energy consumption by 17.56%, the number of writes to NVM by 18.97% at LLC, and 10.66% at a main-memory level compared to baseline architecture

Efficient Placement and Migration Policies for an STT-RAM based Hybrid L1 Cache for Intermittently Powered Systems

The number of battery-powered devices is rapidly increasing due to the widespread use of IoT-enabled nodes in various fields. Energy harvesters, which help to power embedded devices, are a feasible alternative to replacing battery-powered devices. In a capacitor, the energy harvester stores enough energy to power up the embedded device and compute the task. This type of computation is referred to as intermittent computing. Energy harvesters are unable to supply continuous power to embedded devices. All registers and cache in conventional processors are volatile. We require a Non-Volatile Memory (NVM)-based Non-Volatile Processor (NVP) that can store registers and cache contents during a power failure. NVM-based caches reduce system performance and consume more energy than SRAM-based caches. This paper proposes Efficient Placement and Migration policies for hybrid cache architecture that uses SRAM and STT-RAM at the first level cache. The proposed architecture includes cache block placement and migration policies to reduce the number of writes to STT-RAM. During a power failure, the backup strategy identifies and migrates the critical blocks from SRAM to STT-RAM. When compared to the baseline architecture, the proposed architecture reduces STT-RAM writes from 63.35% to 35.93%, resulting in a 32.85% performance gain and a 23.42% reduction in energy consumption. Our backup strategy reduces backup time by 34.46% when compared to the baseline